AOT42S60L/AOB42S60L 600V 37A MOS TM Power Transistor General Description Product Summary The AOT42S60L & AOB42S60L have been fabricated TM using the advanced MOS high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability these devices can be adopted quickly into new and existing offline power supply designs. VDS @ Tj,max 700V IDM 166A RDS(ON),max 0.109 Qg,typ 40nC Eoss @ 400V 9.2J 100% UIS Tested 100% Rg Tested Top View TO-263 D2PAK TO-220 D D D G D G S S S G AOT42S60L AOB42S60L Orderable Part Number Package Type Form Minimum Order Quantity AOT42S60L AOB42S60L TO-220 Green TO-263 Green Tube Tape & Reel 1000 800 Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol AOT42S60L/AOB42S60L Drain-Source Voltage VDS 600 Gate-Source Voltage Continuous Drain Current VGS TC=25C TC=100C 30 Units V V 37 ID 23 A Pulsed Drain Current C IDM Avalanche Current C IAR 11 A Repetitive avalanche energy C EAR 234 mJ EAS 1345 mJ W G Single pulsed avalanche energy TC=25C Power Dissipation B Derate above 25oC MOSFET dv/dt ruggedness Peak diode recovery dv/dt H Junction and Storage Temperature Range 166 417 PD 300 C AOT42S60L/AOB42S60L Units TJ, TSTG TL Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D Symbol RJA Rev5.0: Sepetember 2017 W/ oC dv/dt Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds J Maximum Case-to-sink A Maximum Junction-to-Case 3.3 100 20 -55 to 150 RCS RJC www.aosmd.com V/ns C 65 C/W 0.5 0.3 C/W C/W Page 1 of 6 Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter Conditions Min Typ Max ID=250A, VGS=0V, TJ=25C ID=250A, VGS=0V, TJ=150C Units 600 - - 650 700 - V A STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VDS=600V, VGS=0V - - 1 VDS=480V, TJ=150C - 10 - IGSS Gate-Body leakage current VDS=0V, VGS=30V - - 100 VGS(th) Gate Threshold Voltage VDS=5V,ID=250A 2.5 3.2 3.8 n V RDS(ON) Static Drain-Source On-Resistance VSD Diode Forward Voltage IS ISM VGS=10V, ID=21A, TJ=25C - 0.095 0.109 VGS=10V, ID=21A, TJ=150C - 0.27 0.31 IS=21A,VGS=0V, TJ=25C - 0.84 - V Maximum Body-Diode Continuous Current - - 37 A Maximum Body-Diode Pulsed Current - - 166 A - 2154 - pF - 135 - pF - 103 - pF - 344 - pF VGS=0V, VDS=100V, f=1MHz - 2.7 - pF VGS=0V, VDS=0V, f=1MHz - 1.7 - DYNAMIC PARAMETERS Input Capacitance Ciss Coss Output Capacitance Co(er) Effective output capacitance, energy related H Crss Effective output capacitance, time related I Reverse Transfer Capacitance Rg Gate resistance Co(tr) VGS=0V, VDS=100V, f=1MHz VGS=0V, VDS=0 to 480V, f=1MHz SWITCHING PARAMETERS Total Gate Charge Qg - 40 - nC - 11.7 - nC Gate Drain Charge - 11.9 - nC Turn-On DelayTime - 38.5 - ns - 53 - ns - 136 - ns - 46 - ns Qgs Gate Source Charge Qgd tD(on) tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time VGS=10V, VDS=480V, ID=21A VGS=10V, VDS=400V, ID=21A, RG=25 Body Diode Reverse Recovery Time Peak Reverse Recovery Current IF=21A,dI/dt=100A/s,VDS=400V - 473 - ns Irm IF=21A,dI/dt=100A/s,VDS=400V - 38.5 - Qrr Body Diode Reverse Recovery Charge IF=21A,dI/dt=100A/s,VDS=400V - 10.5 - A C A. The value of R JA is measured with the device in a still air environment with T A =25C. B. The power dissipation PD is based on TJ(MAX)=150C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150C, Ratings are based on low frequency and duty cycles to keep initial TJ =25C. D. The R JA is the sum of the thermal impedance from junction to case R JC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150C. The SOA curve provides a single pulse rating. G. L=60mH, IAS=6.7A, VDD=150V, Starting TJ=25C H. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS. I. Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS. J. Wavesoldering only allowed at leads. APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev5.0: Sepetember 2017 www.aosmd.com Page 2 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 80 10V 70 10V 7V 50 60 6V 5.5V ID (A) ID (A) 50 6V 7V 40 40 30 5.5V 30 5V 20 20 5V VGS=4.5V 10 10 VGS=4.5V 0 0 0 5 10 15 0 20 1000 10 15 20 0.30 -55C VDS=20V 0.25 100 125C RDS(ON) () 0.20 ID(A) 10 VGS=10V 0.15 1 0.10 25C 0.1 0.05 0.00 0.01 2 3 4 5 6 7 8 9 0 10 15 30 45 60 75 90 ID (A) Figure 4: On-Resistance vs. Drain Current and Gate Voltage VGS(Volts) Figure 3: Transfer Characteristics 1.2 3 2.5 VGS=10V ID=21A 2 BVDSS (Normalized) Normalized On-Resistance 5 VDS (Volts) Figure 2: On-Region Characteristics@125C VDS (Volts) Figure 1: On-Region Characteristics@25C 1.5 1 1.1 1 0.9 0.5 0 -100 -50 0 50 100 150 200 Temperature (C) Figure 5: On-Resistance vs. Junction Temperature Rev5.0: Sepetember 2017 www.aosmd.com 0.8 -100 -50 0 50 100 150 200 (oC) TJ Figure 6: Break Down vs. Junction Temperature Page 3 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 1.0E+02 1.0E+01 12 VDS=480V ID=21A 125C 1.0E-01 25C 9 VGS (Volts) IS (A) 1.0E+00 1.0E-02 1.0E-03 6 3 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 0 1.0 0 VSD (Volts) Figure 7: Body-Diode Characteristics (Note E) 15 30 45 60 Qg (nC) Figure 8: Gate-Charge Characteristics 10000 20 Ciss 16 Eoss(uJ) Capacitance (pF) 1000 Coss 100 Eoss 12 8 Crss 10 4 0 1 0 100 200 300 400 500 600 0 100 200 300 400 500 600 VDS (Volts) Figure 10: Coss stored Energy VDS (Volts) Figure 9: Capacitance Characteristics 1000 ID (Amps) 100 10s RDS(ON) limited 10 100s 1ms 10ms DC 1 TJ(Max)=150C TC=25C 0.1 0.01 0.1 1 10 100 1000 VDS (Volts) Figure 11: Maximum Forward Biased Safe Operating Area for AOT(B)42S60L(Note F) Rev5.0: Sepetember 2017 www.aosmd.com Page 4 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1500 40 35 Current rating ID(A) EAS(mJ) 1200 900 600 300 30 25 20 15 10 5 0 0 25 50 75 100 125 150 175 0 25 TCASE (C) Figure 12: Avalanche energy 50 75 100 125 150 TCASE (C) Figure 13: Current De-rating (Note B) ZJC Normalized Transient Thermal Resistance 10 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TC+PDM.ZJC.RJC RJC=0.3C/W 0.1 PD PD TonT 0.01 on Single Pulse 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 T T 1 10 Pulse Width (s) Figure 14: Normalized Maximum Transient Thermal Impedance for AOT(B)42S60L(Note F) Rev5.0: Sepetember 2017 www.aosmd.com Page 5 of 6 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + VDC - VDC DUT Qgs Vds Qgd - Vgs Ig Charge Res istive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs + VDC 90% Vdd - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L EAR= 1/2 LI Vds 2 AR BVDSS Vds Id + Vgs Vgs VDC - Rg Vdd I AR Id DUT Vgs Vgs Diode Recovery Tes t Circuit & Waveforms Qrr = - Idt Vds + DUT Vgs Vds - Isd Vgs Ig Rev5.0: Sepetember 2017 L Isd + Vdd trr dI/dt IRM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6