R07DS0687EJ0100 Rev.1.00 Page 1 of 5
Jun 12, 2012
PP/MP Datasheet
RKR104BKU
Silicon Schottky Barrier Diode for Rectifying
Features
Low reverse current and suitable for high efficiency rectifying.
Ultra small Resin Package (TURP-FM) is suitable for compact and high-density surface mount design.
Ordering Information
Part No Laser Mark Package Name Package Code Taping Abbreviation
(Quantity)
RKR104BKU # P6 S03 TURP-FM PUSF0002ZD-A P6 (4,000pcs / reel)
Pin Arrangement
Cathode mark
Mark
1. Cathode
2. Anode
1 2
S03
R07DS0687EJ0100
Rev.1.00
Jun 12, 2012
RKR104BKU PP/MP
R07DS0687EJ0100 Rev.1.00 Page 2 of 5
Jun 12, 2012
Absolute Maximum Ratings
(Ta = 25C)
Item Symbol Value Unit
Repetitive peak reverse voltage VRRM 40 V
Reverse voltage VR 40 V
Average rectified current IO *1 *2 1 A
Non-Repetitive peak forward surge curr ent IFSM *3 4 A
Junction temperature Tj 150 C
Storage temperature Tstg –55 to +150 C
Notes: 1. See Fig.6. With Ceramics board.
2. Ta = 28°C, With Ceramics board (board size: 50 mm 50 mm, Land size 2 mm 2 mm)
Short form wave ( = 180°C) VR = 20 V.
3. 10 ms sin wave 1 pulse.
Electrical Characteristics
(Ta = 25C)
Item Symbol Min Typ Max Unit Test Condition
VF1 — —
0.37 IF = 100 mA Forward voltage VF3 — — 0.55
V IF = 700 mA
IR1 — — 10 VR = 5 V Reverse current IR2 — — 50
A VR = 40 V
Capacitance C — — 30 pF VR = 10 V f = 1 MHz
— 110 — Ceramics board *1 Thermal resistance Rth(j-a) — 220 —
C/W Glass epoxy board *2
Notes: 1. Ceramics board
2
2
5
2
50h × 50w × 0.8t
Unit: mm
2. Glass epoxy board
2
50h × 50w × 1.6t
Unit: mm
6
6
5
RKR104BKU PP/MP
R07DS0687EJ0100 Rev.1.00 Page 3 of 5
Jun 12, 2012
Main Characteristics
Fig.1 Forward current vs. Forward voltage
Forward voltage VF (V)
Fig.3 Capacitance vs. Reverse voltage
Reverse voltage VR (V)
Capacitance C (pF) Forward current IF (A)
Reverse current IR (A)
Fig.2 Reverse current vs. Reverse voltage
Reverse voltage VR (V)
0 0.2 0.3 0.4 0.5 0.6
10–3
1.0
10–2
10–1
10–6
10–5
10–4
10
100
1010.1
1000
0 5 10 15 20 25
10–3
10–6
10–5
10–4
30
100
10–7
0.1 35 40
Ta = 75°C
Ta = 25°C
Pulse test
Ta = 25°C
Ta = 75°C
Pulse test
f = 1MHz
Pulse test
RKR104BKU PP/MP
R07DS0687EJ0100 Rev.1.00 Page 4 of 5
Jun 12, 2012
Ambient temperature Ta (°
C
)
Fig.6 Average rectified current vs. Ambient temperature
(VR=VRRM/2, Tj=150°C, Rth(j-a)=110°C/W, With Ceramics board)
Average rectified current I
O
(A)
Fig.5 Reverse power dissipation vs. Reverse voltage
Reverse voltage V
R
(V)
Reverse power dissipation Pd (W)
Forward current I
F
(A)
Fig.4 Forward power dissipation vs. Forward current
Forward power dissipation Pd (W)
75 10025 500 125–25
DC
D=1/2
3
2.5
2
1.5
40302010
00
1.20.8
00.40
0.6
0.7
0.8
t
T
0V
D = —
T
t
D=2/3
D=1/2
0.5
D=5/6
0.9
1
sin
Tj = 150°C
0.1
0.2
0.3
0.4
10.60.2
1
0.5
0
0.6
0.7
0.8
0.5
0.9
1
0.1
0.2
0.3
0.4
t
T
0A
D = —
T
tD=1/2
DC
Ta = 25°C
sin
150
3.5
D=1/6
D=1/3
Sin(θ=180°
)
D=1/3
D=1/6
50
RKR104BKU PP/MP
R07DS0687EJ0100 Rev.1.00 Page 5 of 5
Jun 12, 2012
Package Dimensions
A
b
D
E
0.60
1.90
2.50
0.55
Dimension in Millimeters
Reference
Symbol Min Nom Max
1.30
⎯
0.004
g
MASS[T
y
p.]
T
U
RP-F
M
RENE
S
A
S
C
od
e
JEITA Packa
g
e Cod
e
Previous
C
od
e
Packa
g
e Nam
e
T
U
RP-F
M
0.60 0.65
0.55
1.20
2.001.80
2.602.40
L0.300.25 0.35
b1
l1
C
H
E
b
E
HE
L
L
0.65
1.40
P
US
F
000
2ZD-
A
Pattern of terminal position areas
0.9
-2.3 -
e
1
--
--
A
C 0.130.08 0.18
Lp
0.8
0.4 --
L
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