30
VTB Process Photodiodes VTB5051BH
PRODUCT DESCRIPTION
Planar silicon photodiode in a “flat” window, dual
lead TO-5 package. The package incorporates
an infrared rejection filter. Cathode is common to
the case. These diodes have very high shunt
resistance and have good blue response.
PACKAGE DIMENSIONS inch (mm)
CASE 14 TO-5 HERMETIC
CHIP A CTIVE AREA: .023 in
2
(14.8 mm
2
)
ABSOLUTE MAXIMUM RATINGS
Storage Temperature: -40°C to 110°C
Ope rat i ng Tem perature: -40°C t o 110°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTB curves, pages 21-22)
SYMBOL CHARACTERISTI C TEST CONDIT IONS VTB5051BH UNITS
Min. Typ. Max.
ISC Short Circuit Current H = 100 fc, 2850 K 8 13 µA
TC ISC ISC Tem perat ure Coefficient 2850 K .02 .08 %/°C
VOC Open Circuit Voltage H = 100 fc, 2850 K 420 mV
TC V OC VOC Temperature Coefficient 2850 K -2.0 mV/°C
IDDark Current H = 0, VR = 2.0 V 250 pA
RSH Shunt Resistance H = 0, V = 10 mV .56 GΩ
TC RSH RSH Temperature Coefficient H = 0, V = 10 mV -8.0 %/°C
CJJunction Capacitance H = 0, V = 0 3.0 nF
λrange Spectral Application Range 330 720 nm
λpSpectral Response - Peak 580 nm
VBR Breakdown Voltage 2 40 V
θ1/2 Angular Resp. - 50% Resp. Pt. ±50 Degrees
NEP Noise Equiv alent Power 3.7 x 10-14 (Typ.)
D* Specific Detectivity 1.0 x 1013 (Typ.) WHz⁄
cm Hz W⁄
Excelitas Technologies, 22001 Dumberry, Vaudreuil, Canada J7V 8P7 Phone: 877-734-6786 Fax: 450-424-3413 www.excelitas.com
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