DATA SH EET
Product specification
Supersedes data of 2001 Mar 02 2002 May 15
INTEGRATED CIRCUITS
74HC1G66; 74HCT1G66
Bilateral switch
2002 May 15 2
Philips Semiconductors Product specification
Bilateral switch 74HC1G66; 74HCT1G66
FEATURES
•Wide operating voltage range from 2.0 to 9.0 V
•Very low ON-resistance:
–45Ω (typical) at VCC = 4.5 V
–30Ω (typical) at VCC = 6.0 V
–25Ω (typical) at VCC = 9.0 V.
•High noise immunity
•Low power dissipation
•Very small 5 pins package
•Output capability: non standard.
DESCRIPTION
The 74HC1G/HCT1G66 is a high-speed Si-gate CMOS
device.
The 74HC1G/HCT1G66 provides an analog switch. The
switch has two input/output pins (Y and Z) and an active
HIGH enable input pin (E). When pin E is LOW, the analog
switch is turned off.
The non standard output currents are equal compared to
the 74HC/HCT4066.
QUICK REFERENCE DATA
GND = 0 V; Tamb =25°C; tr=t
f= 6.0 ns.
Notes
1. CPD is used to determine the dynamic power dissipation (PDin µW).
PD=C
PD ×VCC2×fi+∑((CL+CS)×VCC2×fo) where:
fi= input frequency in MHz;
fo= output frequency in MHz;
CL= output load capacitance in pF;
CS= maximum switch capacitance in pF;
VCC = supply voltage in Volts;
∑((CL+CS)×VCC2×fo) = sum of outputs.
2. For HC1G the condition is VI= GND to VCC.
For HCT1G the condition is VI= GND to VCC −1.5 V.
FUNCTION TABLE
See note 1.
Note
1. H = HIGH voltage level;
L = LOW voltage level.
SYMBOL PARAMETER CONDITIONS TYPICAL UNIT
HC1G HCT1G
tPZH/tPZL turn-on time E to Vos CL= 15 pF; RL=1kΩ; VCC = 5 V 11 12 ns
tPHZ/tPLZ turn-off time E to Vos CL= 15 pF; RL=1kΩ; VCC = 5 V 11 12 ns
CIinput capacitance 1.5 1.5 pF
CPD power dissipation capacitance notes 1 and 2 9 9 pF
CSmaximum switch capacitance 8 8 pF
INPUT E SWITCH
L OFF
HON
2002 May 15 3
Philips Semiconductors Product specification
Bilateral switch 74HC1G66; 74HCT1G66
ORDERING INFORMATION
PINNING
OUTSIDE NORTH
AMERICA
PACKAGE
TEMPERATURE
RANGE PINS PACKAGE MATERIAL CODE MARKING
74HC1G66GW −40 to +125 °C 5 SC-88A plastic SOT353 HL
74HCT1G66GW −40 to +125 °C 5 SC-88A plastic SOT353 TL
74HC1G66GV −40 to +125 °C 5 SC-74A plastic SOT753 H66
74HCT1G66GV −40 to +125 °C 5 SC-74A plastic SOT753 T66
PIN SYMBOL DESCRIPTION
1 Y independent input/output Y
2 Z independent input/output Z
3 GND ground (0 V)
4 E enable input E (active HIGH)
5V
CC supply voltage
Fig.1 Pin configuration.
handbook, halfpage
1
2
3
5
4
MNA074
66
VCC
Z
E
GND
Y
Fig.2 Logic symbol.
handbook, halfpage
MNA075
41
2
Y
Z
E
Fig.3 IEC logic symbol.
handbook, halfpage
MNA076
4 # 12
X1
1
1
Fig.4 Logic diagram.
handbook, halfpage
MNA077
VCC
GND
E
Z
Y
VCC
2002 May 15 4
Philips Semiconductors Product specification
Bilateral switch 74HC1G66; 74HCT1G66
RECOMMENDED OPERATING CONDITIONS
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V);
see note 1.
Notes
1. To avoid drawing VCC current out of pin Z, when switch current flows in pin Y, the voltage drop across the
bidirectional switch must not exceed 0.4 V. If the switch current flows into pin Z, no VCC current will flow out of
terminal Y. In this case there is no limit for the voltage drop across the switch, but the voltage at pins Y and Z may
not exceed VCC or GND.
2. Above 55 °C the value of PD derates linearly with 2.5 mW/K.
SYMBOL PARAMETER CONDITIONS 74HC1G66 74HCT1G66 UNIT
MIN. TYP. MAX. MIN. TYP. MAX.
VCC supply voltage 2.0 5.0 10.0 4.5 5.0 5.5 V
VIinput voltage GND −VCC GND −VCC V
VSswitch voltage GND −VCC GND −VCC V
Tamb operating ambient
temperature see DC and AC
characteristics per
device
−40 −+125 −40 −+125 °C
tr,t
finput rise and fall times VCC = 2.0 V −−1000 −−−ns
VCC = 4.5 V −6.0 500 −6.0 500 ns
VCC = 6.0 V −−400 −−−ns
VCC = 10.0 V −−250 −−−ns
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCC supply voltage −0.5 +11.0 V
IIK input diode current VI<−0.5 V or VI>VCC + 0.5 V −±20 mA
ISK switch diode current VS<−0.5 V or VS>VCC + 0.5 V −±20 mA
ISswitch source or sink current −0.5 V <VS<VCC +0.5 V −±25 mA
ICC VCC or GND current −±50 mA
Tstg storage temperature −65 +150 °C
PDpower dissipation per package for temperature range from −40 to +125 °C;
note 2 −200 mW
PSpower dissipation per switch −100 mW
2002 May 15 5
Philips Semiconductors Product specification
Bilateral switch 74HC1G66; 74HCT1G66
DC CHARACTERISTICS
Family 74HC1G66
At recommended operating conditions; voltages are referenced to GND (ground=0V).
Note
1. All typical values are measured at Tamb =25°C.
SYMBOL PARAMETER
TEST CONDITIONS Tamb (°C)
UNIT
OTHER VCC (V) −40 to +85 −40 to +125
MIN. TYP.(1) MAX. MIN. MAX.
VIH HIGH-level input
voltage 2.0 1.5 1.2 −1.5 −V
4.5 3.15 2.4 −3.15 −V
6.0 4.2 3.2 −4.2 −V
9.0 6.3 4.7 −6.3 −V
VIL LOW-level input
voltage 2.0 −0.8 0.5 −0.5 V
4.5 −2.1 1.35 −1.35 V
6.0 −2.8 1.8 −1.8 V
9.0 −4.3 2.7 −2.7 V
ILI input leakage
current VI=V
CC or GND 6.0 −0.1 1.0 −1.0 µA
10.0 −0.2 2.0 −2.0 µA
ISanalog switch
current, OFF-state VI=V
IH or VIL;
VS=V
CC −GND;
see Fig.6
10.0 −0.1 1.0 −1.0 µA
analog switch
current, ON-state VI=V
IH or VIL;
VS=V
CC −GND;
see Fig.7
10.0 −0.1 1.0 −1.0 µA
ICC quiescent supply
current VI=V
CC or GND;
Vis = GND or VCC;
Vos =V
CC or GND
6.0 −1.0 10 −20 µA
10.0 −2.0 20 −40 µA
2002 May 15 6
Philips Semiconductors Product specification
Bilateral switch 74HC1G66; 74HCT1G66
Family 74HCT1G66
At recommended operating conditions; voltages are referenced to GND (ground=0V).
Note
1. All typical values are measured at Tamb =25°C.
SYMBOL PARAMETER
TEST CONDITIONS Tamb (°C)
UNIT
OTHER VCC (V) −40 to +85 −40 to +125
MIN. TYP.(1) MAX. MIN. MAX.
VIH HIGH-level input
voltage 4.5 to 5.5 2.0 1.6 −2.0 −V
VIL LOW-level input voltage 4.5 to 5.5 0.1 1.2 0.8 −0.8 V
ILI input leakage current VI=V
CC or GND 5.5 −0.1 1.0 −1.0 µA
ISanalog switch current,
OFF-state VI=V
IH or VIL;
VS=V
CC −GND;
see Fig.6
5.5 −0.1 1.0 −1.0 µA
analog switch current,
ON-state VI=V
IH or VIL;
VS=V
CC −GND;
see Fig.7
5.5 −0.1 1.0 −1.0 µA
ICC quiescent supply
current VI=V
CC or GND;
Vis = GND or VCC;
Vos =V
CC or GND
4.5 to 5.5 −110−20 µA
∆ICC additional supply
current per input VI=V
CC −2.1 V 4.5 to 5.5 −− 500 −850 µA
2002 May 15 7
Philips Semiconductors Product specification
Bilateral switch 74HC1G66; 74HCT1G66
Family 74HC1G66 and 74HCT1G66
For 74HC1G66: VCC = 2.0, 4.5, 6.0 or 9.0 V; note 1.
For 74HCT1G66: VCC = 4.5 V.
Notes
1. At supply voltages approaching 2 V, the analog switch ON-resistance becomes extremely non-linear. Therefore it is
recommended that these devices be used to transmit digital signals only, when using this supply voltage.
2. All typical values are measured at Tamb =25°C.
SYMBOL PARAMETER
TEST CONDITIONS Tamb (°C)
UNIT
OTHER VCC
(V) IS
(µA) −40 to +85 −40 to +125
MIN. TYP.(2) MAX. MIN. MAX.
RON ON-resistance
(peak) Vis =V
CC to GND;
VI=V
IH or VIL;
see Fig.5
2.0 100 −− −−−Ω
4.5 1000 −42 118 −142 Ω
6.0 1000 −31 105 −126 Ω
9.0 1000 −23 88 −105 Ω
ON-resistance
(rail) Vis = GND;
VI=V
IH or VIL;
see Fig.5
2.0 100 −75 −−−Ω
4.5 1000 −29 95 −115 Ω
6.0 1000 −23 82 −100 Ω
9.0 1000 −18 70 −80 Ω
Vis =V
CC;
VI=V
IH or VIL;
see Fig.5
2.0 100 −75 −−−Ω
4.5 1000 −35 106 −128 Ω
6.0 1000 −27 94 −113 Ω
9.0 1000 −21 78 −95 Ω
2002 May 15 8
Philips Semiconductors Product specification
Bilateral switch 74HC1G66; 74HCT1G66
Fig.5 Test circuit for measuring ON-resistance
(RON).
MNA078
V
YZ
I
is
Vis = 0 to VCC - GND
HIGH
(from enable inputs)
GND
Fig.6 Test circuit for measuring OFF-state
current.
MNA079
AA
YZ
V
I = VCC or GND VO = GND or VCC
LOW
(from enable input)
GND
Fig.7 Test circuit for measuring ON-state current.
MNA080
AA
YZ
V
I = VCC or GND VO (open circuit)
HIGH
(from enable input)
GND
Fig.8 Typical ON-resistance (RON) as a function
of input voltage (Vis) for Vis = 0 to VCC.
handbook, halfpage
0466102 V
is (V)
80
40
20
60
0
MNA081
RON
(Ω)
VCE = 4.5 V
6.0 V 9.0 V
2002 May 15 9
Philips Semiconductors Product specification
Bilateral switch 74HC1G66; 74HCT1G66
AC CHARACTERISTICS
Type 74HC1G66
GND = 0 V; tr=t
f= 6 ns.
Note
1. All typical values are measured at Tamb =25°C.
Type 74HCT1G66
GND = 0 V; tr=t
f= 6 ns; Vis is the input voltage at pins Yor Z, whichever is assigned as an input. Vos is the output
voltage at pins Yor Z, whichever is assigned as an output.
Note
1. All typical values are measured at Tamb =25°C.
SYMBOL PARAMETER
TEST CONDITIONS Tamb (°C)
UNIT
WAVEFORMS VCC (V) −40 to +85 −40 to +125
MIN. TYP.(1) MAX. MIN. MAX.
tPHL/tPLH propagation delay
Vis to Vos
RL=∞; CL= 50 pF;
see Fig.12 2.0 −875−90 ns
4.5 −315−18 ns
6.0 −213−15 ns
9.0 −110−12 ns
tPZH/tPZL turn-on time
EtoV
os
RL=1kΩ;CL=50pF;
see Figs 13 and 14 2.0 −50 125 −150 ns
4.5 −16 25 −30 ns
6.0 −13 21 −26 ns
9.0 −916−20 ns
tPHZ/tPLZ turn-off time
EtoV
os
RL=1kΩ;CL=50pF:
see Figs 13 and 14 2.0 −27 190 −225 ns
4.5 −16 38 −45 ns
6.0 −14 33 −38 ns
9.0 −12 16 −20 ns
SYMBOL PARAMETER
TEST CONDITIONS Tamb (°C)
UNIT
WAVEFORMS VCC (V) −40 to +85 −40 to +125
MIN. TYP.(1) MAX. MIN. MAX.
tPHL/tPLH propagation delay
Vis to Vos
RL=∞; CL= 50 pF;
see Fig.12. 4.5 −315−18 ns
tPZH/tPZL turn-on time
EtoV
os
RL=1kΩ;CL=50pF;
see Figs 15 and 16. 4.5 −15 30 −36 ns
tPHZ/tPLZ turn-off time
EtoV
os
RL=1kΩ;CL=50pF;
see Figs 15 and 16. 4.5 −13 44 −53 ns
2002 May 15 10
Philips Semiconductors Product specification
Bilateral switch 74HC1G66; 74HCT1G66
Type 74HC1G66 and 74HCT1G66
At recommended conditions and typical values. GND = 0 V; tr=t
f= 6.0 ns. Vis is the input voltage at pins Yor Z,
whichever is assigned as an input; Vos is the output voltage at pins Yor Z, whichever is assigned as an output.
Notes
1. Adjust input voltage Vis is 0 dBm level (0 dBM = 1 mW into 600 Ω).
2. Adjust input voltage Vis is 0 dBm level at Vos for 1 MHz (0 dBM = 1 mW into 50 Ω).
SYMBOL PARAMETER TEST CONDITIONS Vis(p-p) (V) VCC (V) TYP. UNIT
sine-wave distortion
f = 1 kHz RL=10kΩ; CL= 50 pF; see Fig.12 4.0 4.5 0.04 %
8.0 9.0 0.02 %
sine-wave distortion
f = 10 kHz RL=10kΩ; CL= 50 pF; see Fig.12 4.0 4.5 0.12 %
8.0 9.0 0.06 %
switch OFF signal
feed-through RL= 600 Ω; CL= 50 pF; f = 1 MHz;
see Figs 9 and 13 note 1 4.5 −50 dB
9.0 −50 dB
fmax minimum frequency
response (−3 dB) RL=50Ω;C
L= 10 pF;
see Figs 10 and 11 note 2 4.5 180 MHz
9.0 200 MHz
CSmaximum switch
capacitance 8pF
2002 May 15 11
Philips Semiconductors Product specification
Bilateral switch 74HC1G66; 74HCT1G66
Fig.9 Typical switch OFF signal feed-through as a function of frequency.
handbook, full pagewidth
0
−20
−40
−60
−80
−100
MNA082
10 102103104105106
f (kHz)
(dB)
Test conditions: VCC = 4.5 V; GND = 0 V; RL=50Ω;R
SOURCE =1kΩ.
handbook, full pagewidth
5
0
−5
MNA083
10 102103104105106
f (kHz)
(dB)
Fig.10 Typical frequency response.
Test conditions: VCC = 4.5 V; GND = 0 V; RL=50Ω;R
SOURCE =1kΩ.
2002 May 15 12
Philips Semiconductors Product specification
Bilateral switch 74HC1G66; 74HCT1G66
Fig.11 Test circuit for measuring minimum frequency response.
handbook, full pagewidth
MNA084
0.1 µF
2RL
2RL
Vos
VCC
Vis
CLdB
Z/YY/Z
GND
channel
ON
sine-wave
Adjust input voltage to obtain 0 dBm at Vos when fin = 1 MHz.
After set-up, frequency of fin is increased to obtain a reading of −3 db at Vos.
Fig.12 Test circuit for measuring sine-wave distortion.
handbook, full pagewidth
MNA085
10 µF
2RL
2RL
Vos
VCC
Vis
CLDISTORTION
METER
Z/YY/Z
GND
fin = 1 kHz
sine-wave channel
ON
Fig.13 Test circuit for measuring switch OFF signal feed-through.
handbook, full pagewidth
MNA086
0.1 µF
2RL
2RL
Vos
VCC
Vis
CLdB
Z/YY/Z
GND
channel
OFF
2002 May 15 13
Philips Semiconductors Product specification
Bilateral switch 74HC1G66; 74HCT1G66
AC WAVEFORMS
Fig.14 The input (Vis) to output (Vos) propagation
delays.
handbook, halfpage
MNA087
tPLH tPHL
VM(1)
VM(1)
Vis
Vos
GND
VI
VOH(2)
VOL(2)
(1) For HC1G VM= 50%
For HCT1G VM= 1.3 V.
(2) VOL and VOH are the typical output voltage drop that occur with
the output load.
Fig.15 The turn-on and turn-off times.
MNA088
tPLZ
tPHZ
outputs
disabled outputs
enabled
VY(3)
VX(2)
outputs
enabled
OUTPUT
LOW-to-OFF
OFF-to-LOW
OUTPUT
HIGH-to-OFF
OFF-to-HIGH
E INPUT
VI
VCC
VM(1)
GND
GND
tPZL
tPZH
VM(1)
VM(1)
(1) For HC1G VM= 50%; VI= GND to VCC
For HCT1G VM= 1.3 V; VI= GND to 3.0 V.
(2) VX= 10% of signal amplitude.
(3) VY= 90% of signal amplitude.
Fig.16 Test circuit for measuring AC performance.
handbook, halfpage
open
50 pF
RL = 1 kΩVCC
VCC
VIVO
MNA090
D.U.T.
CL
RT
PULSE
GENERATOR S1
Definitions for test circuit:
CL= load capacitance including jig and probe capacitance
(see “AC characteristics” for values)
RT= termination resistance should be equal to the output
impedance Zo of the pulse generator.
TEST S1
tPLH/tPHL open
tPLZ/tPZL VCC
tPHZ/tPZH GND
Fig.17 Input pulse definitions.
MNA089
tTHL (tf)t
TLH (tr)
VM(1)
tW
POSITIVE
INPUT PULSE
NEGATIVE
INPUT PULSE
0 V
AMPLITUDE
90%
10%
tTLH (tr)t
THL (tf)
VM(1)
tW
0 V
AMPLITUDE
90%
10%
tr=t
f= 6 ns, when measuring fmax, there is no constraint on tr,t
fwith
50% duty factor.
(1) For HC1G66: VM= 50%; VI= GND to VCC
For HCT1G66: VM= 1.3 V; VI= GND to 3.0 V.
2002 May 15 14
Philips Semiconductors Product specification
Bilateral switch 74HC1G66; 74HCT1G66
PACKAGE OUTLINES
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
SOT353
wBM
b
p
D
e
1
e
A
A
1
L
p
Q
detail X
HE
E
vMA
AB
y
0 1 2 mm
scale
c
X
132
45
Plastic surface mounted package; 5 leads SOT353
UNIT A1
max bpcD
E (2) e1HELpQywv
mm 0.1 0.30
0.20 2.2
1.8
0.25
0.10 1.35
1.15 0.65
e
1.3 2.2
2.0 0.2 0.10.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15 0.25
0.15
A
1.1
0.8
97-02-28SC-88A
2002 May 15 15
Philips Semiconductors Product specification
Bilateral switch 74HC1G66; 74HCT1G66
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
SOT753 SC-74A
wBM
b
p
D
e
A
A
1
L
p
Q
detail X
HE
E
vMA
AB
y
0 1 2 mm
scale
c
X
132
45
Plastic surface mounted package; 5 leads SOT753
UNIT A1bpcDEH
E
L
p
Qywv
mm 0.100
0.013 0.40
0.25 3.1
2.7
0.26
0.10 1.7
1.3
e
0.95 3.0
2.5 0.2 0.10.2
DIMENSIONS (mm are the original dimensions)
0.6
0.2 0.33
0.23
A
1.1
0.9
02-04-16
2002 May 15 16
Philips Semiconductors Product specification
Bilateral switch 74HC1G66; 74HCT1G66
SOLDERING
Introduction to soldering surface mount packages
Thistextgivesaverybriefinsightto acomplextechnology.
A more in-depth account of soldering ICs can be found in
our
“Data Handbook IC26; Integrated Circuit Packages”
(document order number 9398 652 90011).
There is no soldering method that is ideal for all surface
mount IC packages. Wave soldering can still be used for
certainsurfacemount ICs,butitisnotsuitablefor finepitch
SMDs. In these situations reflow soldering is
recommended.
Reflow soldering
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
totheprinted-circuitboardbyscreen printing, stencilling or
pressure-syringe dispensing before package placement.
Several methods exist for reflowing; for example,
convection or convection/infrared heating in a conveyor
type oven. Throughput times (preheating, soldering and
cooling) vary between 100 and 200 seconds depending
on heating method.
Typical reflow peak temperatures range from
215 to 250 °C. The top-surface temperature of the
packages should preferable be kept below 220 °C for
thick/large packages, and below 235 °C for small/thin
packages.
Wave soldering
Conventional single wave soldering is not recommended
forsurfacemount devices(SMDs)orprinted-circuit boards
with a high component density, as solder bridging and
non-wetting can present major problems.
To overcome these problems the double-wave soldering
method was specifically developed.
If wave soldering is used the following conditions must be
observed for optimal results:
•Use a double-wave soldering method comprising a
turbulent wave with high upward pressure followed by a
smooth laminar wave.
•For packages with leads on two sides and a pitch (e):
– larger than or equal to 1.27 mm, the footprint
longitudinal axis is preferred to be parallel to the
transport direction of the printed-circuit board;
– smaller than 1.27 mm, the footprint longitudinal axis
must be parallel to the transport direction of the
printed-circuit board.
The footprint must incorporate solder thieves at the
downstream end.
•Forpackageswith leadsonfoursides,thefootprintmust
be placed at a 45°angle to the transport direction of the
printed-circuit board. The footprint must incorporate
solder thieves downstream and at the side corners.
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
Manual soldering
Fix the component by first soldering two
diagonally-opposite end leads. Use a low voltage (24 V or
less) soldering iron applied to the flat part of the lead.
Contact time must be limited to 10 seconds at up to
300 °C.
When using a dedicated tool, all other leads can be
soldered in one operation within 2 to 5 seconds between
270 and 320 °C.
2002 May 15 17
Philips Semiconductors Product specification
Bilateral switch 74HC1G66; 74HCT1G66
Suitability of surface mount IC packages for wave and reflow soldering methods
Notes
1. Formoredetailedinformationon the BGApackagesrefertothe
“(LF)BGAApplicationNote
”(AN01026);orderacopy
from your Philips Semiconductors sales office.
2. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum
temperature (with respect to time) and body size of the package, there is a risk that internal or external package
cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the
Drypack information in the
“Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”
.
3. These packages are not suitable for wave soldering. On versions with the heatsink on the bottom side, the solder
cannot penetrate between the printed-circuit board and the heatsink. On versions with the heatsink on the top side,
the solder might be deposited on the heatsink surface.
4. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction.
The package footprint must incorporate solder thieves downstream and at the side corners.
5. Wave soldering is suitable for LQFP, TQFP and QFP packages with a pitch (e) larger than 0.8 mm; it is definitely not
suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.
6. Wave soldering is suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is
definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.
PACKAGE(1) SOLDERING METHOD
WAVE REFLOW(2)
BGA, LBGA, LFBGA, SQFP, TFBGA, VFBGA not suitable suitable
HBCC, HBGA, HLQFP, HSQFP, HSOP, HTQFP, HTSSOP, HVQFN,
HVSON, SMS not suitable(3) suitable
PLCC(4), SO, SOJ suitable suitable
LQFP, QFP, TQFP not recommended(4)(5) suitable
SSOP, TSSOP, VSO not recommended(6) suitable
2002 May 15 18
Philips Semiconductors Product specification
Bilateral switch 74HC1G66; 74HCT1G66
DATA SHEET STATUS
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DATA SHEET STATUS(1) PRODUCT
STATUS(2) DEFINITIONS
Objective data Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data Qualification This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Product data Production This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
DEFINITIONS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
attheseorat anyotherconditionsabovethose giveninthe
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationorwarrantythatsuchapplicationswillbe
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductorscustomersusingorsellingtheseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
theuseof anyoftheseproducts,conveysnolicence ortitle
under any patent, copyright, or mask work right to these
products,andmakesnorepresentations or warrantiesthat
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
2002 May 15 19
Philips Semiconductors Product specification
Bilateral switch 74HC1G66; 74HCT1G66
NOTES
© Koninklijke Philips Electronics N.V. 2002 SCA74
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
Printed in The Netherlands 613508/03/pp20 Date of release: 2002 May 15 Document order number: 9397 750 09723
