AUIRG4PH50S - International Rectifier

AUIRG4PH50S

n-channel

Features

 Standard: Optimized for minimum saturation

voltage and low operating frequencies (< 1kHz)

 Generation 4 IGBT design provides tighter

parameter distribution and higher efficiency

 Industry standard TO-247AC package

 Lead-Free

 Automotive Qualified *

 Generation 4 IGBT's offer highest efficiency available

 IGBT's optimized for specified application conditions

Benefits

VCES =1200V

VCE(on) typ. = 1.47V

@VGE = 15V, IC = 33A

Standard Speed IGBT

INSULATED GATE BIPOLAR TRANSISTOR

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PD -96301

GC E

Gate Collector Emitter

AUTOMOTIVE GRADE

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These

are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in

the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device

reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.

Ambient temperature (TA) is 25°C, unless otherwise specified.

Parameter Max. Units

VCES Collector-to-Emitter Voltage V

IC@ TC = 25°C Continuous Collector Current

IC@ TC = 100°C Continuous Collector Current

ICM Pulsed Collector Current

ILM Clamped Inductive Load Current

Gate-to-Emitter Voltage

Transient Gate-to-Emitter Voltage

EARV Reverse Voltage Avalanche Energy

PD @ TC =25° Maximum Power Dissipation

PD @ TC =100° Maximum Power Dissipation

TJOperating Junction and

TSTG Storage Temperature Range

Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)

Mounting Torque, 6-32 or M3 Screw. 10 lbf·in (1.1 N·m)

Thermal Resistance

Parameter Min. T

p. Max. Units

RθJC Junction-to-Case ——0.64

RθCS Case-to-Sink, Flat, Greased Surface —0.24 —

RθJA Junction-to-Ambient, typical socket mount ——40

Wt Weight —6.0(0.21) —g (oz)

°C

°C/W

VGE

1200

114

270

-55 to + 150

± 20

± 30

200

TO-247AC

04/13/10

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Parameter Min. Typ. Max. Units Conditions

QgTotal Gate Charge (turn-on) — 167 251 IC = 33A

Qge Gate - Emitter Charge (turn-on) — 25 38 nC VCC = 400V See Fig. 8

Qgc Gate - Collector Charge (turn-on) — 55 83 VGE = 15V

td(on) Turn-On Delay Time — 32 —

trRise Time — 29 — TJ = 25°C

td(off) Turn-Off Delay Time — 845 1268 IC = 33A, VCC = 960V

tfFall Time — 425 638 VGE = 15V, RG = 5.0Ω

Eon Turn-On Switching Loss — 1.80 — Energy losses include "tail"

Eoff Turn-Off Switching Loss — 19.6 — mJ See Fig. 9, 10, 14

Ets Total Switching Loss — 21.4 44

td(on) Turn-On Delay Time — 32 — TJ = 150°C,

trRise Time — 30 — IC = 33A, VCC = 960V

td(off) Turn-Off Delay Time — 1170 — VGE = 15V, RG = 5.0Ω

tfFall Time — 1000 — Energy losses include "tail"

Ets Total Switching Loss — 37 — mJ See Fig. 10,11,14

LEInternal Emitter Inductance — 13 — nH Measured 5mm from package

Cies Input Capacitance — 3600 — VGE = 0V

Coes Output Capacitance — 160 — pF VCC = 30V See Fig. 7

Cres Reverse Transfer Capacitance — 30 — ƒ = 1.0MHz

Parameter Min. Typ. Max. Units Conditions

V(BR)CES Collector-to-Emitter Breakdown Voltage 1200 — — V VGE = 0V, IC = 250µA

V(BR)ECS Emitter-to-Collector Breakdown Voltage 18 — — V VGE = 0V, IC = 1.0 A

∆V(BR)CES/∆TJTemperature Coeff. of Breakdown Voltage — 1.22 — V/°C VGE = 0V, IC = 2.0 mA

— 1.47 1.7 IC = 33A VGE = 15V

VCE(ON) Collector-to-Emitter Saturation Voltage — 1.75 — IC = 57A See Fig.2, 5

— 1.55 — IC = 33A , TJ = 150°C

VGE(th) Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, IC = 250µA

DVGE(th)/DTJTemperature Coeff. of Threshold Voltage — -11 — mV/°C VCE = VGE, IC = 250µA

gfe Forward Transconductance 27 40 — S VCE = 100V, IC = 33A

— — 250 VGE = 0V, VCE = 1200V

— — 2.0 VGE = 0V, VCE = 10V, TJ = 25°C

— — 1000 VGE = 0V, VCE = 1200V, TJ = 150°C

IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V

Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

ICES Zero Gate Voltage Collector Current

µA

Static or Switching Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Pulse width ≤ 80µs; duty factor ≤ 0.1%.

Pulse width 5.0µs, single shot.

Notes:

Repetitive rating; VGE = 20V, pulse width limited by

max. junction temperature. ( See fig. 13b )

VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 5.0Ω,

(See fig. 13a)

Repetitive rating; pulse width limited by maximum

junction temperature.

AUIRG4PH50S

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 Qualification standards can be found at International Rectifiers web site: http//www.irf.com/

 Exceptions to AEC-Q101 requirements are noted in the qualification report.

Qualification Information

†

Moisture Sensitivity Level TO-247AC N/A

RoHS Compliant Yes

ESD

Machine Model Class M3

AEC-Q101-002

Human Body Model Class H2

AEC-Q101-001

Charged Device Model Class C4

AEC-Q101-005

Qualification Level

Automotive

(per AEC-Q101)

††

Comments: This part number(s) passed Automotive

qualification. IR’s Industrial and Consumer qualification level

is granted by extension of the higher Automotive level.

AUIRG4PH50S

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Fig. 1 - Typical Load Current vs. Frequency

(Load Current = IRMS of fundamental)

Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics

100

1000

0.0 1.0 2.0 3.0 4.0 5.0

V , Collector-to-Emitter Voltage (V)

I , Collector-to-Emitter Current (A)

V = 15V

80µs PULSE WIDTH

T = 150 C

J°

T = 25 C

J°

100

1000

5678910 11 12

V , Gate-to-Emitter Voltage (V)

I , Collector-to-Emitter Current (A)

V = 50V

5µs PULSE WIDTH

T = 25 C

J°

T = 150 C

J°

0.1 1 10

f, Frequency (kHz)

Load Current (A)

60% of rated

voltage

Ideal diodes

Square wave:

For both:

Duty cycle: 50%

T = 125°C

T = 90°C

Gate drive as specified

sink

Power Dissi pation = 40W

Triangul ar wave:

Clamp voltage:

80% of rated

AUIRG4PH50S

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Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig. 5 - Typical Collector-to-Emitter Voltage

vs. Junction Temperature

Fig. 4 - Maximum Collector Current vs. Case

Temperature

0.001

0.01

0.1

0.00001 0.0001 0.001 0.01 0.1 1

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

1 2

JDM thJC C

t , Rectangular Pulse Duration (sec)

Thermal Response (Z )

thJC

0.01

0.02

0.05

0.10

0.20

0.50

SINGLE PULSE

(THERMAL RESPONSE)

25 50 75 100 125 150

T , Case Temperature ( C)

Maximum DC Collector Current(A)

C°

-60 -40 -20 020 40 60 80 100 120 140 160

1.0

1.5

2.0

2.5

T , Junction Temperature ( C)

V , Collector-to-Emitter Voltage(V)

J°

V = 15V

80 us PULSE WIDTH

I = A66

I = A33

I = A16.5

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Fig. 7 - Typical Capacitance vs.

Collector-to-Emitter Voltage

Fig. 8 - Typical Gate Charge vs.

Gate-to-Emitter Voltage

Fig. 9 - Typical Switching Losses vs. Gate

Resistance

Fig. 10 - Typical Switching Losses vs.

Junction Temperature

15Ω

1 10 100

1000

2000

3000

4000

5000

6000

7000

V , Collector-to-Emitter Voltage (V)

C, Capacitance (pF)

0V,

f = 1MHz

+ C

C SHORTED

ies ge gc , ce

res gc

oes ce gc

Cies

Coes

Cres

025 50 75 100 125 150 175

Q , Total Gate Charge (nC)

V , Gate-to-Emitter Voltage (V)

V= 400V

I = 33A

010 20 30 40 50

21.0

22.0

23.0

24.0

25.0

R , Gate Resistance (Ohm)

Total Switching Losses (mJ)

V = 960V

V = 15V

T = 25 C

I = 33A

-60 -40 -20 020 40 60 80 100 120 140 160

100

1000

T , Junction Temperature ( C )

Total Switching Losses (mJ)

J°

R = 5Ohm

V = 15V

V = 960V

I = A

16.5

5Ω

RG , Gate Resistance ( Ω )

AUIRG4PH50S

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Fig. 11 - Typical Switching Losses vs.

Collector-to-Emitter Current

Fig. 12 - Reverse Bias SOA

010 20 30 40 50 60 70

100

120

I , Collector Current (A)

Total Switching Losses (mJ)

R = 5Ohm

T = 150 C

V = 960V

V = 15V

100

1000

1 10 100 1000 10000

V = 20V

T = 125 C

SAFE OPERATING AREA

V , Collector-to-Emitter Voltage (V)

I , Collector Current (A)

5Ω

AUIRG4PH50S

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D.U.T.

50V

V *

* Driver same type as D.U.T.; Vc = 80% of Vce(max)

* Note: Due to the 50V power supply, pulse width and inductor

will increase to obtain rated Id.

1000V

Fig. 13a - Clamped Inductive

Load Test Circuit

Fig. 13b - Pulsed Collector

Current Test Circuit

Fig. 14b - Switching Loss

Waveforms

50V

Driver*

1000V

D.U.T.

c

Fig. 14a - Switching

Loss Test Circuit

* Driver same type

as D.U.T., VC = ----V

0 - VCC

RLICM

VCC

480µF

Pulsed Collector Current

Test Circuit

AUIRG4PH50S

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TO-247AC Package Outline

TO-247AC Part Marking Information

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

Dimensions are shown in milimeters (inches)

Lot Code

AUG4PH50S

YWWA

XX or XX

Part Number

IR Logo

Date Code

Y= Year

WW= Work Week

A= Automotive, Lead Free

AUIRG4PH50S

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Ordering Information

Base

art number Packa

e T

e Standard Pack Com

lete Part Number

Form Quantit

AUIRG4PH50S TO-247AC Tube 25 AUIRG4PH50S

AUIRG4PH50S

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(IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to

its products and services at any time and to discontinue any product or services without notice. Part numbers

designated with the “AU” prefix follow automotive industry and / or customer specific requirements with regards

to product discontinuance and process change notification. All products are sold subject to IR’s terms and

conditions of sale supplied at the time of order acknowledgment.

IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance

with IR’s standard warranty. Testing and other quality control techniques are used to the extent IR deems

necessary to support this warranty. Except where mandated by government requirements, testing of all

parameters of each product is not necessarily performed.

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For technical support, please contact IR’s Technical Assistance Center

http://www.irf.com/technical-info/

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