1. General description
The TEA152x family STARplug is a Switched Mode Power Supply (SMPS) controller IC
that operates directly from the rectified universal mains. It is implemented in the
high-voltage EZ-HV SOI process, combined with a low-voltage Bipolar Complementary
Metal-Oxide Semiconductor (BiCMOS) process. The device includes a high-voltage
power switch and a circuit for st art-up directly from the rectified mains voltage.
A dedicated circuit for valley switching is built in, which makes a very efficient slim-line
electronic power- plug concept possible.
In its most basic version of application, the TEA152x family acts as a voltage source.
Here, no additional secondary electronics are required. A combined voltage and current
source can be realized with minimum costs for external components. Implementation of
the TEA152x family renders an efficient and low cost power supply system.
2. Features and benefits
Designed for general purpose supplies up to 30 W
Integrated power switch:
TEA1520x: 48 Ω; 650 V
TEA1521x: 24 Ω; 650 V
TEA1522x: 12 Ω; 650 V
TEA1523P: 6.5 Ω; 650 V
Operates from universal AC mains supplies (8 0 V to 276 V)
Adjustable frequ ency for flexible design
RC oscillator for load insensitive regulation loop constant
Valley switching for minimum switch-on loss
Frequency reduction at low power output makes low standby power possible
(< 100 mW)
Adjustable overcurrent protection
Undervoltage prot ect i on
Temperature protection
Short-circuit win din g pr ot ec tio n
Simple application with both primary and secondary (opto) feedback
Available in DIP8 and SO14 packages
TEA152x
SMPS ICs for low-power systems
Rev. 04 — 14 September 2010 Product data sheet
TEA152X All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 04 — 14 September 2010 2 of 20
NXP Semiconductors TEA152x
SMPS ICs for low-power systems
3. Applications
Chargers
Adapters
Set-Top Box (STB)
DVD
CD(R)
TV/monitor standby supplies
PC peripherals
Microcontroller supplies in home applications and small portable equipment, etc.
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
Vdrain voltage on pin DRAIN Tj>0°C0.4 - +650 V
RDSon drain - so urce on-st a te
resistance
TEA1520x Isource =0.06 A
Tj=25°C - 48 55.2 Ω
Tj= 100 °C - 68 78.2 Ω
TEA1521x Isource =0.125 A
Tj=25°C - 24 27.6 Ω
Tj= 100 °C - 34 39.1 Ω
TEA1522x Isource =0.25 A
Tj=25°C - 12 13.8 Ω
Tj= 100 °C - 17 19.6 Ω
TEA1523P Isource =0.50 A
Tj=25°C-6.57.5Ω
Tj= 100 °C - 9.0 10.0 Ω
VCC supply voltage continuous 0.4 - +40 V
fosc oscillator frequency 10 100 200 kHz
Idrain current on pin DRAIN Vdrain >60V;
no auxiliary supply -1.52mA
TEA152X All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 04 — 14 September 2010 3 of 20
NXP Semiconductors TEA152x
SMPS ICs for low-power systems
5. Ordering information
6. Block diagram
Table 2. Orderi ng information
Type number Package
Name Description Version
TEA1520P DIP8 plastic dual in-line package; 8 leads (300 mil) SOT97-1
TEA1521P DIP8 plastic dual in-line package; 8 leads (300 mil) SOT97-1
TEA1522P DIP8 plastic dual in-line package; 8 leads (300 mil) SOT97-1
TEA1523P DIP8 plastic dual in-line package; 8 leads (300 mil) SOT97-1
TEA1520T SO14 plastic small outline package; 14 leads; body width 3.9 mm SOT108-1
TEA1521T SO14 plastic small outline package; 14 leads; body width 3.9 mm SOT108-1
TEA1522T SO14 plastic small outline package; 14 leads; body width 3.9 mm SOT108-1
Pin numbers without parenthesis refer to DIP8 packages and within parenthesis refer to SO14 packages.
Fig 1. Block diagra m
mgt419
PROTECTION
LOGIC
LOGIC
SUPPLY
TEA152x VALLEY
POWER-UP
RESET
THERMAL
SHUTDOWN
OSCILLATOR
PWM
stop
low freq
100 mV
0.75 V
0.5 V
blank
short circuit winding
overcurrent
10x
2.5 V
F
1.8 U
1 (1)
2 (2, 3, 4,
5, 9, 10)
3 (6)
4 (7)
8 (14)
7 (12, 13)
6 (11)
5 (8)
DRAIN
n.c.
GND
SOURCE
AUX
REG
RC
VCC
TEA152X All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 04 — 14 September 2010 4 of 20
NXP Semiconductors TEA152x
SMPS ICs for low-power systems
7. Pinning information
7.1 Pinning
7.2 Pin description
8. Functional description
The TEA152x family is the heart of a compact flyback converter, with the IC placed at the
primary side. The auxiliary winding of the transformer can be used for indirect feedback to
control the isolated output. This additional winding also powers the IC. A more accurate
control of the output voltage and/or current can be implemented with an additional
secondary sensing circuit and optocoupler feedback.
The TEA152x family uses voltage mode control. The frequency is determined by the
maximum transformer demagnetizing time and the time of the oscillator. In the first case,
the converter operates in the Self-Oscillating Power Supply (SOPS) mode. In the latter
case, it operates at a constant frequency, which can be adjusted with externa l
Fig 2. Pin confi gura t io n DIP8 Fig 3. Pin configuration SO14
TEA152xP
V
CC
DRAIN
GND n.c.
RC SOURCE
REG AUX
001aae137
1
2
3
4
6
5
8
7
TEA152xT
VCC DRAIN
GND n.c.
GND n.c.
GND SOURCE
GND GND
RC GND
REG AUX
001aae138
1
2
3
4
5
6
7 8
10
9
12
11
14
13
Table 3. Pin descripti on
Symbol Pin Description
DIP8 SO14
VCC 1 1 supply voltage
GND 2 2, 3, 4,
5, 9, 10 ground
RC 36frequency setting
REG 4 7 regulation input
AUX 5 8 input for voltage from the auxiliary winding for timing
(demagnetization)
SOURCE 6 11 source of the internal MOS switch
n.c. 7 12, 13 not connected
DRAIN 8 14 drain of the internal MOS switch; input for the start-up current
and valley sensing
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Product data sheet Rev. 04 — 14 September 2010 5 of 20
NXP Semiconductors TEA152x
SMPS ICs for low-power systems
component s RRC and CRC. This mode is called Pulse Width Modulation (PWM).
Furthermore, a prima ry stroke is started only in a valley of the secondary ringing. This
valley switching principle minimizes capacitive switch-on losses.
8.1 Start-up and Underoltage lockout
Initially, the IC is self supplying from the rectified main s volt age. The IC st art s switching as
soon as the voltage on pin VCC passes the VCC(startup) level. The supply is taken over by
the auxiliary winding of the transformer as soon as VCC is high enough and the supply
from the line is stopped for high efficiency operation.
When for some reason the auxiliary supply is not sufficient, the high-voltage supply also
supplies the IC. As soon as the voltage on pin VCC drops below the VCC(stop) level, the IC
stops switching an d restarts from the rectified mains voltage.
8.2 Oscillator
The frequency of the oscillator is set by the external resistor and cap acitor on pin RC. The
external capacitor is charged rapidly to the VRC(max) level and, st arting from a new primary
stroke, it discharges to the VRC(min) level. Because the discharge is exponential, the
relative sensitivity of the duty factor to the regulation voltage at low duty factor is almost
equal to the sensitivity at high duty factors. This results in a more constant gain over the
duty factor range compared to PWM systems with a linear sawtooth oscillator. Stable
operation at low duty factors is easily realized. For high efficiency, the frequency is
reduced as soon as the duty factor drops below a certain value. This is accomplished by
increasing the oscillator charge time.
To ensure that the capacitor can be charged within the charge time, the value of the
oscillator capacitor should be limited to approximately 1 nF.
8.3 Duty factor control
The duty factor is controlled by the internal regulation voltage and the oscillator signal on
pin RC. The interna l re gulat ion vo ltage is equal to the extern al reg ulation voltage (2.5 V)
multiplied by the gain of the error amplifier (typically 20 dB which is 10×).
8.4 Valley switching
A new cycle is started when the primary switch is switched on (see Figure 4). After a
certain time (determined by the oscillator volt age RC and the internal regulation level), the
switch is turned off and the secondary stroke starts. The internal regulation level is
determined by the voltage on pin REG.
After the secondary stroke, the drain voltage shows an oscillation with a frequency of
approximately:
(1)
where:
Lp = primary self-inductance
Cp = parasitic capacit ance on drain node
1
2π× LpCp
×()×
----------------------------------------------
TEA152X All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 04 — 14 September 2010 6 of 20
NXP Semiconductors TEA152x
SMPS ICs for low-power systems
As soon as the oscillator voltage is high again and the secondary stroke has ended, the
circuit waits for a low drain voltage before starting a new primary stroke.
Figure 4 shows the drain voltage together with the valley signal, the signal indi cating the
secondary stroke and the RC voltage.
The primary stroke starts some time before the actual valley at low ringin g frequencies,
and some time after the actual valle y at high ring ing fre quen cie s.
Figure 5 shows a typical curve for a reflected output voltage N ×Vo of 80 V. This voltage is
the output volt age Vo (see Figure 6) transferred to the primary side of the transformer with
the factor N (determined by the turns ratio of the transformer). Figure 5 shows that the
system switches exactly at minimum drain voltage for rin ging frequencies of 480 kHz, thus
reducing the switch-on losses to a minim um. At 200 kHz, the next primary stroke is started
at 33° before the valley. The switch-on losses are still reduced significantly.
A: Start of new cycle with valley switching
B: Start of new cycle in a classical PWM system
Fig 4. Signals for valley switching
mgt42
3
drain
valley
secondary
ringing
secondary
stroke
primary
stroke
secondary
stroke
RC
oscillator
regulation level
A
B
TEA152X All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 04 — 14 September 2010 7 of 20
NXP Semiconductors TEA152x
SMPS ICs for low-power systems
8.5 Demagnetization
The system operates in discontinuous conduction mode all the time. As long as the
secondary stroke has not ended, the oscillator will not start a new primary stroke. During
the first tsuppr seconds, demagnetization recogni tion is suppressed. This suppre ssion may
be necessary in app lications where the transform er has a large leakage induct ance and at
low output voltages.
8.6 Minimum and maximum duty factor
The minimum duty factor of the switched mod e power supply is 0 %. The maximum duty
factor is set to 75 % (typical value at 100 kHz oscillation frequency).
8.7 OverCurrent Protection (OCP)
The cycle-by-cycle peak drain current limit circuit us es the ex ternal sourc e resistor RI to
measure the current. The circuit is activa ted after the leading edg e bla nking time tleb. The
protection circuit limits the source voltage to Vsource(max), and thus limits the primary peak
current.
8.8 Short-circuit winding protection
The short-circuit winding p rotection circuit is also activated af ter the leading edge bla nking
time. If the source volt age exceeds the short-circuit winding protection voltage V swp, the IC
stops switching. Only a power-on reset will restart normal operation. The short-circuit
winding protection also protects in case of a secondary diode short circuit.
8.9 OverTemperature Protection (OTP)
An accurate temperature protection is provided in the device. When the junction
temperature exceeds the thermal shutdown temperature, the IC stops switching. During
thermal protection, the IC current is lowered to the start-up current. The IC continues
normal operation as soon as the overtemperature situation has disappeared.
Fig 5. Typical phase of drain ringing at switch-on (at N ×Vo=80V)
0 200 400 800
f (kHz)
phase
(deg)
40
20
20
40
0
mgt424
600
TEA152X All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 04 — 14 September 2010 8 of 20
NXP Semiconductors TEA152x
SMPS ICs for low-power systems
8.10 OverVoltage Protection (OVP)
Overvoltage protection can be achieved in the application by pulling pin REG above its
normal operation level. The cu rrent pr imary stroke is terminated imme diately, and no new
primary stroke is started until the voltage on pin REG drops to its normal operation level.
Pin REG has an internal clamp. The cu rrent feed into this pin must be limited.
8.11 Output characteristics of complete power-plug
Typical characteristics:
Output power: A wide range of output power levels can be handled by choosing the
RDS(on) and package of the TEA152x family. Power levels up to 30 W can be realized.
Accuracy: The ac cu ra cy of the co mp le te conv er te r, functioning as a voltage sour ce
with primary sensing, is approximately 8 % (mainly dependent on the transformer
coupling). The accuracy with secondary sensing is defined by the accuracy of the
external components. For safety requirements in case of optocoupler feedback loss,
the primary sens in g rema in s active when an overvoltage circuit is connected.
Efficiency: An efficiency of 75 % at maximum output power can be achieved for a
complete converter designed for universal mains.
Ripple: A minimum ripple is obtained in a system designed for a maximum duty factor
of 50 % under normal operating conditions, and a minimized dead time. The
magnitude of the ripple in the output voltage is determined by the frequency and duty
factor of the converter, the output current level and the value and ESR of the output
capacitor.
8.12 Input characteristics of complete power-plug
Typical characteristics:
The input voltage range comprises the universal AC mains (80 V to 276 V)
TEA152X All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 04 — 14 September 2010 9 of 20
NXP Semiconductors TEA152x
SMPS ICs for low-power systems
9. Limiting values
[1] Human body model: equivalent to discharging a 100 pF capacitor through a 1.5 kΩ series resistor. All pins
are 2500 V maximum, except pin DRAIN, which is 1000 V maximum.
[2] Machine model: equivalent to discharging a 200 pF capacitor through a 0.75 μH coil and a 10 Ω series
resistor.
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). All voltages are measured
with respect to ground; positive currents flow into the device; pins VCC and RC are not allowed to be
current driven and pins REG and AUX are not allowed to be voltage driven.
Symbol Parameter Conditions Min Max Unit
Voltages
VCC supply voltage continuous 0.4 +40 V
VRC voltage on pin RC 0.4 +3 V
Vsource voltage on pin SOURCE DMOS power
transistor 0.4 +5 V
Vdrain voltage on pin DRAIN Tj>0°C0.4 +650 V
Currents
IREG current on pin REG - 6 mA
IAUX current on pin AUX 10 +5 mA
Isource source current
TEA1520x 0.25 +0.25 A
TEA1521x 0.5 +0.5 A
TEA1522x 1+1A
TEA1523P 2+2A
Idrain drain current
TEA1520x 0.25 +0.25 A
TEA1521x 0.5 +0.5 A
TEA1522x 1+1A
TEA1523P 2+2A
General
Ptot total power dissipation
DIP8 package Tamb <45°C-1.0W
SO14 package Tamb <50°C-1.0W
Tstg storage temperature 55 +150 °C
Tjjunction temperature 40 +145 °C
Vesd electrostatic discharge voltage human body model [1] -±2500 V
machine model [2] -±200 V
TEA152X All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 04 — 14 September 2010 10 of 20
NXP Semiconductors TEA152x
SMPS ICs for low-power systems
10. Thermal characteristics
[1] Thermal resistance Rth(j-a) can be lower when the GND pins are connected to sufficient copper area on the
printed-circuit board. See the TEA152x application note for details.
11. Characteristics
Table 5. Thermal characteristics
Symbol Parameter Conditions Typ Unit
Rth(j-a) thermal resistance from junction to ambient in free air [1]
DIP8 package 100 K/W
SO14 package 91 K/W
Table 6. Characteristics
Tamb =25
°
C; no overtemperature; all voltages are measured with respect to ground; currents are
positive when flowing into the IC; unless oth erwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Supply
ICC(oper) operating supply current normal operation - 1.3 1.9 mA
ICC(startup) start-up supply current start-up - 180 400 μA
ICC(ch) charge supply current Vdrain >60V 643mA
VCC(startup) start-up supply voltage 9 9.5 10 V
VCC(stop) stop supply voltage undervoltage lockout 7.0 7.5 8.0 V
Idrain current on pin DRAIN Vdrain >60V
no auxiliary supply - 1.5 2 mA
with auxiliary
supply - 30 125 μA
Pulse-width modulator
δmin minimum duty factor - 0 - %
δmax maximum duty cycle f = 100 kHz - 75 - %
SOPS
Vdet(demag) demagnetization detection
voltage 50 100 150 mV
tsup(xfmr_ring) transformer ringing
suppression time start of 2nd stroke 1.0 1.5 2.0 μs
RC oscillator
VRC(min) minimum voltage on pin RC 60 75 90 mV
VRC(max) maximum voltage on pin RC 2.4 2.5 2.6 V
tch(RC) charge time on pin RC - 1 - μs
fosc oscillator frequency 10 100 200 kHz
Duty factor regulator: pin REG
VREG voltage on pin REG 2.4 2.5 2.6 V
Gvvoltage gain error amplifier - 20 - dB
Vclamp(REG) clamp voltage on pin REG IREG =6mA --7.5V
TEA152X All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 04 — 14 September 2010 11 of 20
NXP Semiconductors TEA152x
SMPS ICs for low-power systems
Valley switching
(ΔV/Δt)vrec valley recognition voltage
change with time 102 - +102 V/μs
fvalley ringing frequency for valley
switching N×Vo= 100 V 200 550 800 kHz
td(vrec-swon) valley recognition to
switch-on delay time -150-ns
Current and short-circuit winding protec tion
Vsource(max) maximum voltage on pin
SOURCE ΔV/Δt=0.1V/μs 0.470.500.53V
td(prop) delay from detecting
Vsource(max) to switch-off ΔV/Δt=0.5V/μs - 160 185 ns
Vswp short-winding protection
voltage ΔV/Δt=0.5V/μs 0.7 0.75 0.8 V
tleb leading edge blanking time 250 350 450 ns
FET output stage
IL(drain) leakage current on pin
DRAIN Vdrain = 650 V - - 125 μA
VBR(DRAIN) breakdown vo ltage on pin
DRAIN Tj>0°C 650 - - V
RDSon drain - so urce on-st a te
resistance
TEA1520x Isource =0.06 A
Tj=25°C - 48 55.2 Ω
Tj=100°C - 68 78.2 Ω
TEA1521x Isource =0.125 A
Tj=25°C - 24 27.6 Ω
Tj=100°C - 34 39.1 Ω
TEA1522x Isource =0.25 A
Tj=25°C - 12 13.8 Ω
Tj=100°C - 17 19.6 Ω
TEA1523P Isource =0.50 A
Tj=25°C-6.57.5Ω
Tj=100°C - 9.0 10.0 Ω
tf(DRAIN) fall time on pin DRAIN Vi=300V;
no external capacitor
at drain
-75-ns
Temperature protection
Tprot(max) maximum threshold
temperature 150 160 170 °C
Tprot(hys) hysteresis of protection
temperature -2-°C
Table 6. Characteristics …continued
Tamb =25
°
C; no overtemperature; all voltages are measured with respect to ground; currents are
positive when flowing into the IC; unless oth erwise specified.
Symbol Parameter Conditions Min Typ Max Unit
TEA152X All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 04 — 14 September 2010 12 of 20
NXP Semiconductors TEA152x
SMPS ICs for low-power systems
12. Application information
Further application information can be found in the TEA152x application note.
Fig 6. Primary sensed application; configu ration for TEA152xP (DIP8)
mgt425
1
2
3
4
8
7
6
5
TEA152xP
DRAIN
n.c.
GND
SOURCE
AUX
R4
R3
R2
R1 D2
C6 - Ycap
D1
D5
Z1 C5
CF2
LF
CF1
mains
Vo
RAUX
RI
REG
RC
RRC
CRC
CVCC VCC
TEA152X All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 04 — 14 September 2010 13 of 20
NXP Semiconductors TEA152x
SMPS ICs for low-power systems
13. Package outline
Fig 7. Package outline SOT97-1 (DIP8)
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
SOT97-1 99-12-27
03-02-13
UNIT A
max. 12 b1(1) (1) (1)
b2cD E e M Z
H
L
mm
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
A
min. A
max. bmax.
w
ME
e1
1.73
1.14
0.53
0.38
0.36
0.23
9.8
9.2
6.48
6.20
3.60
3.05 0.2542.54 7.62 8.25
7.80
10.0
8.3 1.154.2 0.51 3.2
inches 0.068
0.045
0.021
0.015
0.014
0.009
1.07
0.89
0.042
0.035
0.39
0.36
0.26
0.24
0.14
0.12 0.010.1 0.3 0.32
0.31
0.39
0.33 0.0450.17 0.02 0.13
b2
050G01 MO-001 SC-504-8
MH
c
(e )
1
ME
A
L
seating plane
A1
wM
b1
e
D
A2
Z
8
1
5
4
b
E
0 5 10 mm
scale
Note
1. Plastic or metal protrusions of 0.25 mm (0.01 inch) maximum per side are not included.
pin 1 index
D
IP8: plastic dual in-line package; 8 leads (300 mil) SOT97
-1
TEA152X All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 04 — 14 September 2010 14 of 20
NXP Semiconductors TEA152x
SMPS ICs for low-power systems
Fig 8. Package outline SOT108-1 (SO14)
UNIT A
max. A1A2A3bpcD
(1) E(1) (1)
eH
ELL
pQZywv θ
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
mm
inches
1.75 0.25
0.10
1.45
1.25 0.25 0.49
0.36
0.25
0.19
8.75
8.55
4.0
3.8 1.27 6.2
5.8
0.7
0.6
0.7
0.3 8
0
o
o
0.25 0.1
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
Note
1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included.
1.0
0.4
SOT108-1
X
wM
θ
A
A1
A2
bp
D
HE
Lp
Q
detail X
E
Z
e
c
L
vMA
(A )
3
A
7
8
1
14
y
076E06 MS-012
pin 1 index
0.069 0.010
0.004
0.057
0.049 0.01 0.019
0.014
0.0100
0.0075
0.35
0.34
0.16
0.15 0.05
1.05
0.041
0.244
0.228
0.028
0.024
0.028
0.012
0.01
0.25
0.01 0.004
0.039
0.016
99-12-27
03-02-19
0 2.5 5 mm
scale
S
O14: plastic small outline package; 14 leads; body width 3.9 mm SOT108
-1
TEA152X All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 04 — 14 September 2010 15 of 20
NXP Semiconductors TEA152x
SMPS ICs for low-power systems
14. Abbreviations
15. Revision history
Table 7. Abbreviations
Acronym Description
BiCMOS Bipolar Complementary Metal-Oxide Semiconductor
DMOS Diffusion Metal-Oxide Semiconductor
ESR Equivalent Series Resistance
EZ-HV SOI Easy High Voltage Silicon-On-Insu lator
FET Field-Effect Transistor
PWM Pulse Width Modulation
SMPS Switched Mode Power Supply
SOPS Self-Oscillating Power Supply
Table 8. Revision history
Document ID Release date Data sheet status Change notice Supersedes
TEA152X v4.0 20100914 Product data sheet - TEA152X_3
Modifications: Table 1 “Quick reference da ta” updated
Table 4 “Limiting values” updated
TEA152X_3 20090323 Product data sheet - TEA152X_FAM_2
Modifications: The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
The minimum value of Tamb has changed in Table 1 and Table 4
The minimum value of Tj has changed in Table 4
TEA152X_FAM_2 20060125 Product data sheet - TEA152X_FAMILY_1
TEA152X_FAMILY_1 20000908 Product specification - -
TEA152X All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 04 — 14 September 2010 16 of 20
NXP Semiconductors TEA152x
SMPS ICs for low-power systems
16. Legal information
16.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of de vice(s) descr ibed in th is document m ay have cha nged since thi s document w as publish ed and may di ffe r in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
16.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liab ility for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and tit le. A short data sh eet is intended
for quick reference only and shou ld not b e relied u pon to cont ain det ailed and
full information. For detailed and full informatio n see the relevant full data
sheet, which is available on request via the local NXP Semicond uctors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall pre va il.
Product specificat ionThe information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to off er functions and qualities beyon d those described in the
Product data sheet.
16.3 Disclaimers
Limited warr a nty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warrant ies, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequ ential damages (including - wit hout limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggreg ate and cumulative liabil ity towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all informa tion supplied prior
to the publication hereof .
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suit able for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in perso nal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liab ility for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and ope ration of their applications
and products using NXP Semiconductors product s, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suit able and fit for the custome r’s applications and
products planned, as well as fo r the planned application and use of
customer’s third party customer(s). Custo mers should provide appropriate
design and operating safeguards to minimize the risks associated with t heir
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party custo m er(s). Customer is responsible for doing all necessary
testing for the customer’s applications and pro ducts using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individua l agreement. In case an individual
agreement is concluded only the ter m s and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing i n this document may be interpreted or
construed as an of fer t o sell product s that is open for accept ance or the gr ant,
conveyance or implication of any license under any copyrights, patents or
other industrial or inte llectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulatio ns. Export might require a prior
authorization from national authorities.
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specif ication.
Product [short] data sheet Production This document contains the product specification.
TEA152X All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 04 — 14 September 2010 17 of 20
NXP Semiconductors TEA152x
SMPS ICs for low-power systems
Quick reference data — The Quick reference dat a is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for aut omo tive use. It i s neither qua lified nor test ed
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automot ive specifications and standards, custome r
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such au tomotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconduct ors for an y
liability, damages or failed product cl aims resulting from custome r design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
16.4 Trademarks
Notice: All referenced b rands, produc t names, service names and trademarks
are the property of their respective ow ners.
STARplug — is a trademark of NXP B.V.
EZ-HV — is a trademark of NXP B.V.
17. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
TEA152X All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 04 — 14 September 2010 18 of 20
continued >>
NXP Semiconductors TEA152x
SMPS ICs for low-power systems
18. Tables
Table 1. Quick reference data . . . . . . . . . . . . . . . . . . . . .2
Table 2. Ordering information . . . . . . . . . . . . . . . . . . . . .3
Table 3. Pin description . . . . . . . . . . . . . . . . . . . . . . . . . .4
Table 4. Limiting values . . . . . . . . . . . . . . . . . . . . . . . . . .9
Table 5. Thermal characteristics . . . . . . . . . . . . . . . . . .10
Table 6. Characteristics . . . . . . . . . . . . . . . . . . . . . . . . .1 0
Table 7. Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . .15
Table 8. Revision history . . . . . . . . . . . . . . . . . . . . . . . .15
TEA152X All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 04 — 14 September 2010 19 of 20
continued >>
NXP Semiconductors TEA152x
SMPS ICs for low-power systems
19. Figures
Fig 1. Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
Fig 2. Pin configuration DIP8. . . . . . . . . . . . . . . . . . . . . .4
Fig 3. Pin configuration SO14 . . . . . . . . . . . . . . . . . . . . .4
Fig 4. Signals for valley switching . . . . . . . . . . . . . . . . . .6
Fig 5. Typical phase of drain ringing at switch-on
(at N ×Vo= 80 V). . . . . . . . . . . . . . . . . . . . . . . . . .7
Fig 6. Primary sensed application; configuration
for TEA152xP (DIP8). . . . . . . . . . . . . . . . . . . . . .12
Fig 7. Package outline SOT97-1 (DIP8) . . . . . . . . . . . .13
Fig 8. Package outline SOT108-1 (SO14). . . . . . . . . . .14
NXP Semiconductors TEA152x
SMPS ICs for low-power systems
© NXP B.V. 2010. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 14 September 2010
Document identifier: TEA152X
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
20. Contents
1 General description. . . . . . . . . . . . . . . . . . . . . . 1
2 Features and benefits . . . . . . . . . . . . . . . . . . . . 1
3 Applications. . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
4 Quick reference data . . . . . . . . . . . . . . . . . . . . . 2
5 Ordering information. . . . . . . . . . . . . . . . . . . . . 3
6 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 3
7 Pinning information. . . . . . . . . . . . . . . . . . . . . . 4
7.1 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
7.2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 4
8 Functional description . . . . . . . . . . . . . . . . . . . 4
8.1 Start-up and Underoltage lockout. . . . . . . . . . . 5
8.2 Oscillator. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
8.3 Duty factor control . . . . . . . . . . . . . . . . . . . . . . 5
8.4 Valley switching . . . . . . . . . . . . . . . . . . . . . . . . 5
8.5 Demagnetization. . . . . . . . . . . . . . . . . . . . . . . . 7
8.6 Minimum and maximum duty factor . . . . . . . . . 7
8.7 OverCurrent Protection (OCP) . . . . . . . . . . . . . 7
8.8 Short-circuit windi ng protection. . . . . . . . . . . . . 7
8.9 OverTemperature Protection (OTP) . . . . . . . . . 7
8.10 OverVoltage Protection (OVP) . . . . . . . . . . . . . 8
8.11 Output characteristics of complete power-plug. 8
8.12 Input characteristics of complete power-plug . . 8
9 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 9
10 Thermal characteristics . . . . . . . . . . . . . . . . . 10
11 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . 10
12 Application information. . . . . . . . . . . . . . . . . . 12
13 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 13
14 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 15
15 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 15
16 Legal information. . . . . . . . . . . . . . . . . . . . . . . 16
16.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 16
16.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
16.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 16
16.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 17
17 Contact information. . . . . . . . . . . . . . . . . . . . . 17
18 Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
19 Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
20 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20