SIEMENS CLY35 HiRel C-Band GaAs Power-MESFET HiFfel Discrete and Microwave Semiconductor @ For professional power amplifiers For frequencies from 100 MHz to 4.5 GHz Hermetically sealed microwave power package Low thermal resistance for high voltage application Power added efficiency > 53 % -@S@a Space Qualification Expected 1998 ESA/SCC Detail Spec. No.: 561 4/008, Type Variant No.s 04 to 06 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking | Ordering Code Pin Configuration | Package 1 2 3 CLY35-00 (ql) - see below G S D |MWP-35 CLY35-05 (ql) CLY35-10 (ql) CLY35-nn: specifies output power level (see electrical characteristics) (ql) Quality Level: =P: Professional Quality, Ordering Code: @Q62702L113 H: High Rel Quality, Ordering Code: on request S: Space Quality, Ordering Gode: on request ES: ESA Space Quality, Ordering Code: = Q62702L112 (see order instructions for ordering example) Semiconductor Group 1of9 Draft D, Jul. 98SIEMENS CLY35 Maximum Ratings Parameter Symbol | Values Unit Drain-source voltage Vos 14 Vv Drain-gate voltage Voc 16 Vv Gate-source voltage Vos -6 Vv Drain current I, 2.8 A Gate forward current I, 16 mA Compression Level P, 1.5 atV,,.<9V dB Operation Range 1 25 at V,.<8V 3.5 at V,.<7V Compression Level P, 3.5 atVj.37V dB Operation Range 2 Compression Level P, tod. dB Operation Range 3 Junction temperature T, 175 C Storage temperature range Ta, - 65...4.175 ae Total power dissipation P. 18 W Soldering temperature T.., 230 C Thermal Resistance Junction-soldering point Bais <7.5 KW Notes.: 1) Operation Range 1: 480 mA <1, < 960 mA 2) Operation Range 2:1, > 9360 mA 4) AtT, =+ 40 C. For T, > + 40 C derating is required. 5) During 15 sec. maximum. The same terminal shall not be resoldered until 3 minutes have ) ) 3) Operation Range 3:1, < 480 mA ) ) elapsed. Semiconductor Group 2o0f9 Draft D, Jul. 98SIEMENS CLY35 Electrical Characteristics (at T,=25C; unless otherwise specified) Parameter Symbol Values Unit min. typ. max. DC Characteristics Drain-source saturation current bes 1.2 2.0 2.8 A Vis=2ViV.,=0V Gate threshold voltage Voth 1.6 2.6 3.6 Vv Vig= 3 V,1,=80mA Drain current at pinch-off, low V ,. ops 200 LA Vis = 3 V, V5 = 3.8 V Gate current at pinch-off, low V ,. loos 80 LA Vic= 3 V, V.g= 3.8 V Drain current at pinch-off, high V ,., opt2 4000 | UA Vig = 12 V,V,,=-4V Gate current at pinch-off, high V ,. loots 1600 | pA Vis=12V,V,,.=-4V Transconductance g,, 600 730 ms Vis =3V,1,= 720 mA Thermal resistance Runs 6.8 K/W junction to soldering point Vig = 9V,1,= 720 mA, T,= 425C Semiconductor Group 3 of 9 Draft D, Jul. 98SIEMENS CLY35 Electrical Characteristics (continued) Parameter Symbol Values Unit min. typ. max. AC Characteristics Linear power gain V,<=9V, |, = 720 mA, f = 2.3 GHz, P,=0dBm CLY35-00 CLY35-05 CLY35-10 10.0 10.5 10.5 11.0 11.2 11.2 dB 1) Output power at 1dB gain compr. Vis= 9 V, | CLY35-00 ,= 720 mA, f = 2.3 GHz D(RF off CLY35-05 CLY35-10 1cB 34.5 35 35.5 34.8 35.3 35.8 dBm Output power Vos = 9 V, lore ot P= 25 dBm ,= 720 mA, f= 2.3 GHz 2 CLY35-00 CLY35-05 CLY35-10 out 34.8 35.3 35.8 dBm Power added efficiency " 2 Vis =9 V, | eae oth = 720 mA, f= 2.3 GHz @ 1dB gain compression CLY35-00 CLY35-05 CLY35-10 PAE 40 45 45 47 50 53 % Notes.: 1) RF Power characteristics given for power matching conditions 2) Power added efficiency: PAE = (P RFout Semiconductor Group ~ Prin) / Pao 4of9 Draft D, Jul. 98SIEMENS CLY35 Typical Common Source S-Parameters f [Sii| 35.5 dBm) in ESA Space Quality Level Further Informations: See our WWW-Pages: - Discrete and RF-Semiconductors (Small Signal Semiconductors) www.siemens.de/semiconductor/products/35/35.htm - HiRel Discrete and Microwave Semiconductors www.siemens.de/semiconductor/products/35/353 .htm Please contact also our marketing division : Tel.: Fax.: e-mail: Address: Semiconductor Group ++89 6362 4480 +4+89 6362 5568 martin. wimmers@siemens-scg.com Siemens Semiconductors, High Frequency Products Marketing, P.O.Box 801709, D-81617 Munich 8ofg Draft D, Jul. 98SIEMENS CLY35 MWP-35 Package 0.54005 2 e |e + 1.89.1 i | ol 3,340.2 2,.20.5 Semiconductor Group Published by Siemens Semiconductors, High Frequency Products Marketing, P.G.Box 801709, D-81617 Munich. Siemens AG 1998. All Rights Reserved. As far as patents or other rights of third parties are concerned, liability is only assumed for components per se, not for applications, processes and circuits implemented within components or assemblies. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. For questions on technology, delivery and prices please contact the Offices of Semiconductor Group in Germany or the Siemens Companies and Representatives woldwide (see address list). Due to technical requirements components may contain dangerous substances. For information on the type in question please contact your nearest Siemens Office, Semiconductor Group. Siemens Semiconductors is a certified CECC and Q89000 manufacturer (this includes ISO 9000). 9of9 Draft D, Jul. 98