BSS139 SIPMOS(R) Small-Signal-Transistor Product Summary Features * N-channel * Depletion mode V DS 250 V R DS(on),max 30 I DSS,min 0.03 A * dv /dt rated * Available with V GS(th) indicator on reel * Pb-free lead-plating; RoHS compliant PG-SOT-23 Halogen free according to IEC61249-2-21 Qualified according to AEC Q101 Type Package Tape and Reel Information Marking BSS139 PG-SOT-23 H6327: 3000 pcs/ree STs Yes BSS139 PG-SOT-23 H6906: 3000 pcs/reel sorted in VS(th) bands STs Yes 1) Pb-free Maximum ratings, at T j=25 C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID T A=25 C 0.10 T A=70 C 0.08 0.4 Pulsed drain current I D,pulse T A=25 C Reverse diode dv /dt dv /dt I D=0.1 A,V DS=200 V, di /dt =200 A/s, T j,max=150 C Gate source voltage V GS Unit A kV/s V 0 (<250V) Power dissipation P tot Operating and storage temperature T j, T stg T A=25 C IEC climatic category; DIN IEC 68-1 Rev. 1.8 6 20 ESD class (JESD22-A114-HBM) 1) Value 0.36 W -55 ... 150 C 55/150/56 see table on next page and diagram 11 page 1 2009-08-18 BSS139 Parameter Values Symbol Conditions Unit min. typ. max. - - 350 250 - - Thermal characteristics Thermal resistance, junction - ambient R thJA minimal footprint K/W Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=-3 V, I D=250 A Gate threshold voltage V GS(th) V DS=3 V, I D=56 A -2.1 -1.4 -1 Drain-source cutoff current I D(off) V DS=250 V, V GS=-3 V, T j=25 C - - 0.1 V DS=250 V, V GS=-3 V, T j=125 C - - 10 V A Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 10 nA On-state drain current I DSS V GS=0 V, V DS=10 V 30 - - mA Drain-source on-state resistance R DS(on) V GS=0 V, I D=15 mA - 12.5 30 V GS=10 V,I D=0.1 mA - 7.8 14 |V DS|>2|I D|R DS(on)max, I D=0.08 A 0.060 0.13 - S -1.2 - -1 V K -1.35 - -1.15 L -1.5 - -1.3 M -1.65 - -1.45 N -1.8 - -1.6 Transconductance g fs Threshold voltage V GS(th) sorted in bands2) V GS(th) J 2) Rev. 1.8 V DS=3 V, I D=56 A Each reel contains transistors out of one band whose identifying letter is printed on the reel label. A specific band cannot be ordered separately. page 2 2009-08-18 BSS139 Parameter Values Symbol Conditions Unit min. typ. max. - 60 76 - 6.7 8.4 Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 2.6 3.3 Turn-on delay time t d(on) - 5.8 8.7 Rise time tr - 5.4 8.1 Turn-off delay time t d(off) - 29 43 Fall time tf - 182 273 Gate to source charge Q gs - 0.14 0.21 Gate to drain charge Q gd - 1.3 2.0 Gate charge total Qg - 2.3 3.5 Gate plateau voltage V plateau - -0.28 - V - - 0.10 A - - 0.4 - 0.81 1.2 V - 8.6 12.9 ns - 2.1 3.1 nC V GS=-3 V, V DS=25 V, f =1 MHz V DD=125 V, V GS=-3...5 V, I D=0.04 A, R G=6 pF ns Gate Charge Characteristics V DD=200 V, I D=0.04 A, V GS=-3 to 5 V nC Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr Rev. 1.8 T A=25 C V GS=-3 V, I F=0.1 A, T j=25 C V R=50 V, I F=0.04 A, di F/dt =100 A/s page 3 2009-08-18 BSS139 1 Power dissipation 2 Drain current P tot=f(T A) I D=f(T A); V GS10 V 0.4 0.12 0.3 I D [A] P tot [W] 0.08 0.2 0.04 0.1 0 0 0 40 80 120 160 0 40 80 T A [C] 120 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T A=25 C; D =0 Z thJA=f(t p) parameter: t p parameter: D =t p/T 100 160 T A [C] 103 limited by on-state resistance 10 s 100 s 1 ms 10-1 0.5 10 0.2 Z thJA [K/W] I D [A] 10 ms 2 10-2 0.1 0.05 101 DC 0.02 0.01 10 10-4 100 10 0 10 1 10 2 10 3 V DS [V] Rev. 1.8 single pulse -3 10-4 10-3 10-2 10-1 100 101 102 t p [s] page 4 2009-08-18 BSS139 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 C R DS(on)=f(I D); T j=25 C parameter: V GS parameter: V GS 0.2 30 V 10 -0.2 V 0V -0.1 V V1 0.2 V 0.5 V 0.1 V 0.16 V 0.5 20 R DS(on) [] I D [A] 0.12 V 0.2 0.08 V 0.1 1V 10 V0 V 0.1- 10 V V 0.2- 0.04 0 0 0 2 4 6 8 10 0 0.04 V DS [V] 0.08 0.12 0.16 0.15 0.20 I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 C 0.3 0.25 0.25 0.2 0.2 25 C 0.15 g fs [S] I D [A] -55 C 0.15 150 C 0.1 0.1 0.05 0.05 0 0 -2 -1 0 1 Rev. 1.8 0.00 0.05 0.10 I D [A] V GS [V] page 5 2009-08-18 BSS139 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=0.015 A; V GS=0 V V GS(th)=f(T j); V DS=3 V; I D=56 A 60 0 50 -0.5 40 -1 %98 V GS(th) [V] R DS(on) [] parameter: I D 30 20 %98 typ -1.5 -2 %2 typ 10 -2.5 0 -3 -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 T j [C] T j [C] 11 Threshold voltage bands 12 Typ. capacitances I D=f(V GS); V DS=3 V; T j=25 C C =f(V DS); V GS=-3 V; f =1 MHz 10 1000 1 100 M N 0.1 C [pF] I D [mA] Ciss K L J 10 Coss 56 A Crss 0.01 1 -2 -1.5 -1 -0.5 Rev. 1.8 0 5 10 15 20 25 30 V DS [V] V GS [V] page 6 2009-08-18 BSS139 13 Forward characteristics of reverse diode 15 Typ. gate charge I F=f(V SD) V GS=f(Q gate); I D=0.1 A pulsed parameter: T j parameter: V DD 8 1 6 0.2 VDS(max) 0.5 VDS(max) 150 C, 98% 0.1 0.8 VDS(max) 4 25 C V GS [V] 150 C I F [A] 25 C, 98% 2 0 0.01 -2 -4 0.001 0 0.4 0.8 1.2 1.6 V SD [V] 0 1 2 3 Q gate [nC] 16 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=250 A 300 V BR(DSS) [V] 280 260 240 220 -60 -20 20 60 100 140 180 T j [C] Rev. 1.8 page 7 2009-08-18 BSS139 Package Outline: Footprint: Packaging: Dimensions in mm Rev. 1.8 page 8 2009-08-18 BSS139 Published by Infineon Technologies AG 81726 Munich, Germany (c) 2010 Infineon Technologies AG All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.8 page 9 2009-08-18 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Infineon: BSS139H6906XTSA1