MAX5948A/MAX5948B
-48V Hot-Swap Controllers
with External RSENSE
8 _______________________________________________________________________________________
Power-Supply Ramping
The MAX5948A/MAX5948B can reside either on the
backplane or the removable circuit board (Figure 6a).
Power is delivered to the load by placing an external
n-channel MOSFET pass transistor in the power-
supply path.
After the circuit board is inserted into the backplane and
the supply voltage at VEE is stable and within the under-
voltage and overvoltage tolerance, the MAX5948A/
MAX5948B turn on Q1. The MAX5948A/MAX5948B grad-
ually turn on the external MOSFET by charging the gate
of Q1 with a 45µA current source. Capacitor C2 provides
a feedback signal to accurately limit the inrush current.
The inrush current can be calculated:
IINRUSH = (IPU x CL)/C2
where CLis the total load capacitance, C3 + C4, and
IPU is the MAX5948_ gate pullup current.
Figure 6b shows the inrush current waveform. The cur-
rent through C2 controls the GATE voltage. At the end
of the DRAIN ramp, the GATE voltage is charged to its
final value. The GATE-to-SENSE clamp limits the maxi-
mum VGS to about 18V under any condition.
Board Removal
If the card is removed from a live backplane, the output
capacitor on the card may not be immediately discharged.
While the output capacitor is discharging, the MAX5948_
continues to operate as if the input supply were still con-
nected because the output capacitor temporarily supplies
operating current to the IC. If the circuit is connected as in
Figure 7a, the voltage at the UV pin falls below the UVLO
detect threshold, and the MAX5948_ turns off the external
MOSFET. If R4 in the circuit is connected directly to the -
48V return, the external MOSFET remains on until the
capacitor is discharged sufficiently to drop the UV pin volt-
age to the UVLO detect threshold.
In either case, when the MOSFET is turned off, the output
capacitor continues to discharge by the IC supply current
IDD. The IDD flows into the IC at the VDD terminal, out at the
VEE terminal, and back to the capacitor through the sub-
strate diode of the external MOSFET. There is also a paral-
lel current path between the VEE and DRAIN terminals
through multiple internal ESD-protection diodes. The pro-
tection circuit built into the IC allows the DRAIN terminal
voltage to drop below that of the VEE terminal so long as
the absolute maximum allowed DRAIN terminal current
(-100mA) is not exceeded. As IDD is only 2mA maximum,
this limiting current will not even be approached.