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Optimum Technology Matching® Applied
GaAs HBT
InGaP HBT
GaAs MESFET
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
NOT FOR NEW DESIGNS
Functional Block Diagram
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
Product Description
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Ordering Information
16
15
14
13
12
11
10
9
1
2
3
4
5
6
7
8
POWER
CONTROL
-45°
+45°
I REF
Q REF
GND2
GND2
GND2
LO
VCC1
PD
I SIG
Q SIG
GND1
GND1
GND1
VCC2
GND1
RF OUT
RF2480
DIRECT QUADRATURE MODULATOR
The RF2480 is a monolithic integrated quadrature modulator IC capable
of universal direct modulation for high-frequency AM, PM, or compound
carriers. This low-cost IC features excellent linearity, noise floor, and
over-temperature carrier suppression performance. The device imple-
ments differential amplifiers for the modulation inputs, 90° carrier phase
shift network, carrier limiting amplifiers, two matched double-balanced
mixers, summing amplifier, and an output RF amplifier which will drive
50 from 800MHz to 2500MHz. Component matching is used to obtain
excellent amplitude balance and phase accuracy.
Features
Typical Carrier
Suppression>35dBc over
temperature with highly linear
operation
Single 5V Power Supply
Integrated RF quadrature net-
work
Digitally controlled Power
Down mode
800MHz to 2500MHz opera-
tion
Applications
Dual-Band CDMA Base Sta-
tions
TDMA/TDMA-EDGE Base Sta-
tions
GSM-EDGE/EGSM Base Sta-
tions
W-CDMA Base Stations
WLAN and WLL Systems
TETRA Systems
RF2480 Direct Quadrature Modulator
RF2480 PCBA Fully Assembled Evaluation Board
DS111219
NOT FOR NEW DESIGNS
RF2480Direct
Quadrature
Modulator
RoHS Compliant & Pb-Free Product
Package Style: SOIC-16
2 of 8
RF2480
DS111219
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
NOT FOR NEW DESIGNS
Absolute Maximum Ratings
Parameter Rating Unit
Supply Voltage -0.5 to +7.5 VDC
Input LO and RF Levels +10 dBm
Operating Ambient Temperature -40 to +85 °C
Storage Temperature -40 to +150 °C
Parameter Specification Unit Condition
Min. Typ. Max.
Carrier Input T=25°C, VCC=5V
Frequency Range 800 2500 MHz
Power Level -6 +6 dBm
Input VSWR 4.5:1 At 900MHz unmatched
2:1 At 1800MHz unmatched
2:1 At 2500MHz unmatched
Modulation Input
Frequency Range DC 250 MHz
Reference Voltage (VREF)3.0V
Maximum Modulation (I&Q) VREF±1.0 V
Gain Asymmetry 0.2 dB
Quadrature Phase Error 3 °
Input Resistance 30 k
Input Bias Current 40 A
RF Output (~800MHz) LO=800MHz, -5dBm; SSB
Maximum Output Power -3 0 +2 dBm TETRA I&Q Amplitude=2VPP
Over operating temperature.
High-Linearity Output Power -6 -5 dBm TETRA I&Q Amplitude=1.1VPP with an ACPR of
-47dBc. Over operating temperature.
Adjacent Channel
Power Rejection
-47 -52 dBc TETRA modulation applied with POUT =-5dBm.
Over operating temperature.
Output P1dB +2 +3 dBm Over operating temperature.
IM3 Suppression -39 -40 dBc 2kHz offset (9kHz, 11kHz) at -6dBm/tone.
Over operating temperature.
IM5 Suppression -49 -59 dBc 2kHz offset (9kHz, 11kHz) at -6dBm/tone.
Over operating temperature.
IM7 Suppression -49 -71 dBc 2kHz offset (9kHz, 11kHz) at -6dBm/tone.
Over operating temperature.
Carrier Suppression -25 -30 dBc Unadjusted performance.
Sideband Suppression -25 -30 dBc Unadjusted performance.
Broadband Noise Floor -150 -145 dBm/Hz 26MHz offset with TETRA signal applied
POUT=-5dBm.
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
3 of 8
NOT FOR NEW DESIGNS
RF2480
DS111219
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Parameter Specification Unit Condition
Min. Typ. Max.
RF Output (~900MHz) LO=880MHz, -5dBm; SSB
Maximum Output Power 0 +4 dBm I&Q Amplitude=2VPP
High-Linearity Output Power -11 dBm I&Q Amplitude=0.325VPP
Carrier Suppression 50 dB T=25°C; POUT=-11dBm (meets CDMA base
station requirements); optimized I,Q DC offsets
35 dB Over Temperature (Temperature cycled from -
40°C to +85°C after optimization at T=25°C;
POUT=-11dBm)
Sideband Suppression 50 dB T=25°C; POUT=-11dBm; optimized I,Q DC off-
sets
35 dB Over Temperature (Temperature cycled from -
40°C to +85°C after optimization at T=25°C;
POUT=-11dBm)
Output Impedance 13-j:25
Broadband Noise Floor -153.0 dBm/Hz At 20MHz offset, VCC=5V; Tied to VREF: ISIG,
QSIG, IREF, and QREF.
RF Output (~2000MHz) LO=2000MHz, -5dBm; SSB
Maximum Output Power -7 -3 dBm I&Q Amplitude=2VPP
High-Linearity Output Power -17 dBm I&Q Amplitude=0.325VPP
Carrier Suppression 50 dB T=25°C; POUT=-17dBm; optimized I,Q DC off-
sets
35 dB Temperature cycled from -40°C to +85°C after
optimization at T=25°C; POUT=-17dBm
Sideband Suppression 50 dB T=25°C; POUT=-17dBm; optimized I,Q DC off-
sets
40 dB Temperature cycled from -40°C to +85°C after
optimization at T=25°C; POUT=-17dBm
Output Impedance 58-j11
Broadband Noise Floor -158.0 dBm/Hz At 20MHz offset, VCC=5V; Tied to VREF: ISIG,
QSIG, IREF, and QREF.
Power Down
Turn On/Of f Time 100 ns
PD Input Resistance 50 k
Power Control “ON” 2.8 V Threshold voltage
Power Control “OFF” 1.0 1.2 V Threshold voltage
Power Supply
Voltage 5 V Specifications
4.5 6.0 V Operating Limits
Current 50 mA Operating
25 APower Down
4 of 8
RF2480
DS111219
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
NOT FOR NEW DESIGNS
Pin Function Description Interface Schematic
1I REF
Reference voltage for the I mixer. This voltage should be the same as the
DC voltage supplied to the I SIG pin. A voltage of 3.0V is recommended.
The SIG and REF inputs are inputs of a differential amplifier. Therefore the
REF and SIG inputs are interchangeable. If swapping the I SIG and I REF
pins, the Q SIG and Q REF also need to be swapped to maintain the correct
phase. It is also possible to drive the SIG and REF inputs in a balanced
mode. This will increase the gain.
For optimum carrier suppression, the DC voltages on I REF, Q REF, I SIG
and Q SIG should be adjusted slightly to compensate for inherent unde-
sired internal DC offsets; for optimum sideband suppression, phase and
signal amplitude on IREF, Q REF, I SIG and Q SIG should be adjusted
slightly to compensate for inherent undesired internal offsets. See RFMD
AN0001 for more detail.
2Q REF
Reference voltage for the Q mixer. This voltage should be the same as the
DC voltage supplied to the Q SIG pin. A voltage of 3.0V is recommended.
See pin 1 for more details.
3GND2
Ground connection of the LO phase shift network. This pin should be con-
nected directly to the ground plane.
4GND2
Same as pin 3.
5GND2
Same as pin 3.
6LO
The input of the phase shifting network. This pin has an internal DC block-
ing capacitor. This port is voltage driven so matching at different frequen-
cies is not required.
7VCC1
Power supply for all circuits except the RF output stage. An external capaci-
tor is needed if no other low frequency bypass capacitor is nearby.
8PD
Power Down control. When this pin is "low", all circuits are shut off. A "low"
is typically 1.2V or less at room temperature.When this pin is "high" (VCC),
all circuits are operating normally. If PD is below VCC, output power and
performance will be degraded. Operating in this region is not recom-
mended, although it might be useful in some applications where power
control is required.
9RF OUT
RF Output. This pin has an internal DC blocking capacitor. At some frequen-
cies, external matching may be needed to optimize output power.
10 GND3 Ground connection for the RF output stage. This pin should be connected
directly to the ground plane.
11 VCC2 Power supply for the RF output amplifier. An external capacitor is needed if
no other low frequency bypass capacitor is near by.
12 GND1 Ground connection for the LO and baseband amplifiers, and for the mixers.
This pin should be connected directly to the ground plane.
13 GND1 Same as pin 12.
14 GND1 Same as pin 12.
425 425
100 100
I RE FI SIG
425 425
100 100
Q REFQ SIG
LO
200
PD
VCC
RF OUT
5 of 8
NOT FOR NEW DESIGNS
RF2480
DS111219
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Package Drawing
Pin Function Description Interface Schematic
15 Q SIG Baseband input to the Q mixer. This pin is DC-coupled. Maximum output
power is obtained when the input signal has a peak to peak amplitude of
2V; for highly linear operation, the input signal (and output power) must be
reduced appropriately. The recommended DC level for this pin is 3.0V. The
peak minimum voltage on this pin (VREF - peak modulation amplitude)
should never drop below 2.0V. The peak maximum voltage on this pin
(VREF + peak modulation amplitude) should never exceed 4.0V. See pin 1
for more details.
16 I SIG Baseband input to the I mixer. This pin is DC-coupled. Maximum output
power is obtained when the input signal has a peak to peak amplitude of
2V; for highly linear operation, the input signal (and output power) must be
reduced appropriately. The recommended DC level for this pin is 3.0V. The
peak minimum voltage on this pin (VREF - peak modulation amplitude)
should never drop below 2.0V. The peak maximum voltage on this pin
(VREF + peak modulation amplitude) should never exceed 4.0V. See pin 1
for more details.
425 425
100 100
Q REFQ SIG
425 425
100 100
I RE FI SIG
NOTES:
1. Shaded lead is Pin 1.
2. All dimensions ar e excluding
mold flash.
3. Lead coplanarit y - 0.005 with
respect to datum "A".
0.050
0.018
0.014
0.157
0.150
0.393
0.386
0.244
0.229
8° MAX
0° MIN
0.034
0.016 0.009
0.007
0.068
0.053
0.008
0.004
-A-
6 of 8
RF2480
DS111219
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
NOT FOR NEW DESIGNS
Application Schematic
DC-Coupled
7 of 8
NOT FOR NEW DESIGNS
RF2480
DS111219
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Evaluation Board Schematic
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
POWER
CONTROL
C1
100 nF
P1-1
C3
100 nF
P1-1
P2-1
C2
100 nF
LO IN
J1
RF OUT
J2
I SIG
J4
Q SIG
J3
2480400-
50 strip
50 strip
50 strip
50 strip
-45°
+45°
NC
GND
P1-1 VCC
P1
1
2
3
P2
1
2
3
P2-1 REF
GND
NC
8 of 8
RF2480
DS111219
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
NOT FOR NEW DESIGNS
Evaluation Board Layout
Board Size 1.510” x 1.510”
Board Thickness 0.031”, Board Material FR-4