141
Darlington 2SD2016
IC–VBE Temperature Characteristics
(Typical)
VCE(sat)–IB Characteristics
(Typical)
Pc–Ta Derating
0.03 0.1 10.5 3
5000
10000
1000
500
100
50
10
Collector Current IC(A)
DC Current Gain hFE
(VCE=4V)
Safe Operating Area (Single Pulse)
125˚C
–55˚C
25˚C
0
3
2
1
021
Base-Emittor Voltage VBE(V)
Collector Current IC(A)
(VCE=4V)
125˚C (Case Temp)
25˚C (Case Temp)
–55˚C (Case Temp)
IC–VCE Characteristics
(Typical)
0
0
1
2
3
2134
Collector-Emitter Voltage VCE(V)
Collector Current IC(A)
3mA
1.5mA
I
B
=0.3mA
0.5mA
1mA
0
3
2
1
0.2 1 3
Base Current IB(mA)
Collector-Emitter Saturation Voltage VCE(sat)(V)
125˚C
25˚C
–55˚C
hFE–IC
Temperature Characteristics (Typical)
hFE–IC Characteristics
(Typical)
0.03 0.1 1 3
100
50
500
1000
10000
5000
Collector Current IC(A)
DC Current Gain hFE
(VCE=4V)
0.5
θj-a–t Characteristics
0.5
1
5
1 10 100 10005 50 500
Time t(ms)
Transient Thermal Resistance θj-a(˚C/W)
fT–IE Characteristics
(Typical)
–0.01 –0.1 –1–0.5–0.05 –3
0
20
40
60
80
Cut-off Frequency fT(MHZ)
(VCE=12V)
Emitter Current IE(A)
30
20
10
2
00 25 50 75 100 125 150
Ambient Temperature Ta(˚C)
Maximum Power Dissipation PC(W)
With Infinite heatsink
Without Heatsink
150x150x2
50x50x2
100x
100x2
Natural Cooling
Silicone Grease
Heatsink: Aluminum
in mm
Silicon NPN Triple Diffused Planar Transistor
Application : Igniter, Relay and General Purpose
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
2SD2016
200
200
6
3
0.5
25(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
■
Absolute maximum ratings
■
Electrical Characteristics
2SD2016
10max
10max
200min
1000to15000
1.5max
2.0max
90typ
40typ
Unit
µ
A
mA
V
V
V
MHz
pF
Conditions
VCB=200V
VEB=6V
IC=10mA
VCE=4V, IC=1A
IC=1A, IB=1.5mA
IC=1A, IB=1.5mA
VCE=12V, IE=–0.1A
VCB=10V, f=1MHz
(Ta=25°C) (Ta=25°C)
Symbol
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
VBE(sat)
fT
COB
External Dimensions FM20(TO220F)
ø3.3±0.2
10.1±0.2
4.0±0.2
16.9±0.3
13.0min
8.4±0.2
0.8±0.2
3.9
±0.2
2.542.54
1.35±0.15
0.85
+0.2
-0.1
1.35±0.15
2.2±0.2
4.2±0.2
2.8 c0.5
2.4±0.2
0.45
+0.2
-0.1
BEC
a
b
Weight : Approx 2.0g
a. Type No.
b. Lot No.
B
C
E
(2kΩ)(200Ω)
Equivalent
circuit
