Amplifier, Power, 0.8 W
40.5 - 43.5 GHz
Rev. V4
MAAP-010512
2
2
2
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Parameter Units Min. Typ. Max.
Small Signal Gain dB 18.0 22.0 27.0
Gain Flatness cross Band dB - +/-1.0 -
Input Return Loss dB - 15 -
Output Return Loss dB - 12 -
Reverse Isolation dB - 50 -
Output P1dB dBm - 27.0 -
Output IP3 dBm 32.5 38.0 -
Saturated Output Power dBm 25.0 29.0 -
Output IMD3 with Pout (scl) = 14 dBm dBc 37.0 48.0 -
Supply Current3 mA - 1117 1300
Absolute Maximum Ratings 4,5,6
Parameter Absolute Max.
Drain Voltage +4.3 V
Gate Bias Voltage -1.5 V < Vg < 0 V
Input Power 15 dBm
Junction Temperature7 150°C
Operating Temperature -40°C to +85°C
Storage Temperature -55°C to +150°C
Handling Procedures
Please observe the following precautions to avoid
damage:
Static Sensitivity
Gallium Arsenide Integrated Circuits are sensitive
to electrostatic discharge (ESD) and can be
damaged by static electricity. Proper ESD control
techniques should be used when handling these
Human Body Model Class 1A devices.
4. Exceeding any one or combination of these limits may cause
permanent damage to this device.
5. M/A-COM Technology Solutions does not recommend
sustained operation near these survivability limits.
6. Operating at nominal conditions with TJ ≤ 150°C will ensure
MTTF > 1 x 106 hours.
7. Junction Temperature (TJ) = TC + Өjc * (V * I)
Typical thermal resistance (Өjc) = 11.2° C/W.
a) For TC = 25°C,
TJ = 75°C @ 4 V, 1117 mA
b) For TC = 85°C,
TJ = 135°C @ 4 V, 1117 mA
3. Adjust Vgs between –1.0 V and –0.1 V to achieve specified supply current. Typical current 1117 mA = 217 (ID1) + 300 (ID2) + 600 (ID3)
Electrical Specifications:
Freq: 40.5 - 43.5 GHz, VD = 4 V, ID1 = 217 mA, ID2 = 300 mA, ID3 = 600 mA, TA = 25°C