34.807IRELESS
IMPORTANT NOTICE
Dear customer,
As from August 2nd 2008, the wireless operations of NXP have moved to a new company,
ST-NXP Wireless.
As a result, the following changes are applicable to the attached document.
●Company name - Philips Semiconductors is replaced with ST-NXP Wireless.
●Copyright - the copyright notice at the bottom of each page “© Koninklijke Philips
Electronics N.V. 200x. All rights reserved”, shall now read: “© ST-NXP Wireless 200x -
All rights reserved”.
●Web site - http://www.semiconductors.philips.com is replaced with
http://www.stnwireless.com
●Contact information - the list of sales offices previously obtained by sending an email
to sales.addresses@www.semiconductors.philips.com, is now found at
http://www.stnwireless.com under Contacts.
If you have any questions related to the document, please contact our nearest sales office.
Thank you for your cooperation and understanding.
ST-NXP Wireless
34.807IRELESS
www.stnwireless.com
DATA SH EET
Product specification
Supersedes data of 1995 Jun 23
File under Integrated Circuits, IC01
1999 Aug 04
INTEGRATED CIRCUITS
TEA5762
Self Tuned Radio (STR)
1999 Aug 04 2
Philips Semiconductors Product specification
Self Tuned Radio (STR) TEA5762
FEATURES
•The tuning system has an optimized IC partitioning both
from application (omitting interferences) and flexibility
(removable front panel option) point of view: the tuning
synthesizer is on-chip with the radio
•Thetuningqualityissuperior and requires no IF-counter
for stop-detection; it is insensitive to ceramic filter
tolerances
•In combination with the microcontroller, fast, low-power
operation of preset mode, manual-search, auto-search
and auto-store are possible
•Thelocal(internal)controllerfunction facilitatesreduced
and simplified microcontroller software
•The high integration level means fewer external
components with regard to the communication between
the radio and the microcontroller and a simple and small
Printed-Circuit Board (PCB)
•The inherent FUZZY LOGIC behaviour of the Self
Tuned Radio (STR), which mimics hand tuning and
yields a potentially fast yet reliable tuning operation
•The level of the incoming signal at which the radio must
lock is software programmable
•Two programmable ports
•FM-on/off port to control the external FM front-end
•High selectivity with distributed IF gain
•Soft mute
•Signal dependent stereo-blend
•High impedance MOSFET input on AM
•Wide supply voltage range of 2.5 to 12 V
•Low current consumption 18 mA at AM and FM
(including tuning synthesizer for AM)
•Low noise figure
•Low output distortion
•Due to the new tuning concept, the tuning is
independent of the channel spacing.
GENERAL DESCRIPTION
The TEA5762 is a 44-pin integrated AM-radio and FM-IF
and demodulator part including a novel tuning concept.
The radio part is based on the TEA5712.
It is designed for the use with an external FM front-end.
Thenew tuning concept combinestheadvantagesof hand
tuning with electronic facilities and features. User
‘intelligence’ is incorporated into the tuning algorithm and
animprovementof theanalogsignalprocessingisusedfor
the AFC function.
ORDERING INFORMATION
TYPE
NUMBER PACKAGE
NAME DESCRIPTION VERSION
TEA5762H QFP44 plastic quad flat package; 44 leads (lead length 1.3 mm);
body 10 ×10 ×1.75 mm SOT307-2
1999 Aug 04 3
Philips Semiconductors Product specification
Self Tuned Radio (STR) TEA5762
QUICK REFERENCE DATA
Notes
1. VCC1 =3V;V
CC2 =12V;V
DDD =3V;f
i= 1 MHz; m = 0.3; fmod = 1 kHz; measured in Fig.9 with S1 in position A; S2
in position B; unless otherwise specified.
2. VCC1 =3V; V
CC2 = 12 V; VDDD =3V; f
i= 10.7 MHz; ∆fm= 22.5 kHz; fm= 1 kHz; measured in Fig.9 with S2 in
position A; S3 in position A; unless otherwise specified.
3. VCC1 =3V; V
CC2 = 12 V; VDDD =3V; V
i3(L + R) = 155 mV; Vpilot = 15.5 mV; fi= 1 kHz; measured in Fig.9 with S2 in
position B; S3 in position B; unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VCC1 supply voltage 2.5 −12 V
VCC2 supply voltage for tuning −−12 V
Vtune tuning voltage 0.7 −VCC2 −0.75 V
ICC1 supply current AM mode 12 15 18 mA
FM mode 13 16 19 mA
IDD supply current AM mode −3.3 −mA
FM mode −2.7 −mA
ICC2 supply current for tuning in preset
mode (band-end to band-end) −−800 µA
Tamb ambient temperature −15 −+60 °C
AM performance; note 1
V10 AF output voltage Vi1 = 5 mV 36 45 70 mV
Vi1 RF sensitivity input voltage S/N = 26 dB 40 55 70 µV
THD total harmonic distortion Vi1 =1mV −0.8 2.0 %
FM performance; note 2
V10 AF output voltage Vi4 = 5 mV 40 48 57 mV
Vi4 IF sensitivity input voltage V10 =−3 dB; V10 =0dB
at Vi4 =10mV −20 30 µV
THD total harmonic distortion IF filter
SFE10.7MS3A20K-A −0.3 0.8 %
MPX performance; note 3
αcs channel separation Vi4 =30mV 26 30 −dB
1999 Aug 04 4
Philips Semiconductors Product specification
Self Tuned Radio (STR) TEA5762
This text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here in
_white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here inThis text is here in
white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader. white to force landscape pages to be ...
BLOCK DIAGRAM
handbook, full pagewidth
PRESCALER
PROGRAMMABLE
COUNTER
STABILIZER
WINDOW
DETECTOR
LAST-STATION
MEMORY
AM/FM
INDICATOR
IN-LOCK
DETECTOR
FM
DETECTOR PILOT
DETECTOR
CHARGE
PUMP
MULTIPLEXER
CRYSTAL
OSCILLATOR
SHIFT REGISTER
TUNER
SWITCH FM
IF1 FM
IF2
SEQUENTIAL
CIRCUIT
STATUS
REGISTER
AM
FRONT
END
AM
OSCILLATOR AM
DETECTOR V/I
CONVERTER
AM
MIXER AM
IF AGC
AFC
hard mute level
PLL
DECODER
MATRIX
SDS MUTE
up
down
level
FM-ON/OFF
VSTAB(A)
VSTAB(B)
AM-RFI
XTAL
COUNTI
RIPPLE
25
4
5
23
1
26
2
P1AGCAM-IFI/O2AM-MIXERAMOSC
AM-IFI1
P0
6404136443130 822
32
20
19
13
15
14
9
12
24
16
1817272829333537
39
38
34
7
21
10 11 342
MO/ST
AFRO
MUTE
AFC(n)
AFC(p)
AFC
VCO
LFI
PILFIL
AFLO
stereo
stereo
mono
38 kHz
19 kHz
WRITE-
ENABLE
DATAFM-IFI2
FM-IFI1 FM-IFO1 BUS-
CLOCK
VCC1
VDDD
TEA5762
FM
AM
CGND
DGND
TUNE RFGND RFGNDMPXIAFO
VCC2
IFGND FSIFMDEM
MBE815
Fig.1 Block diagram.
1999 Aug 04 5
Philips Semiconductors Product specification
Self Tuned Radio (STR) TEA5762
PINNING
SYMBOL PIN DESCRIPTION
RIPPLE 1 ripple capacitor input
AM-RFI 2 AMRF input
RFGND 3 RF ground and substrate
CGND 4 counter ground
COUNTI 5 counter input
AMOSC 6 parallel tuned AM-oscillator circuit to ground
VCC1 7 supply voltage
TUNE 8 tuning output current
VCO 9 voltage controlled oscillator input
AFO 10 AM/FM AF output (output impedance typical 5 kΩ)
MPXI 11 stereo decoder input (input impedance typical 150 kΩ)
LFI 12 loop filter input
MUTE 13 mute input
AFLO 14 left channel output (output impedance typical 4.3 kΩ)
AFRO 15 right channel output (output impedance typical 4.3 kΩ)
PILFIL 16 pilot detector filter input
IFGND 17 ground of IF, detector and MPX stage
FMDEM 18 ceramic discriminator input
AFC(n) 19 AFC negative output
AFC(p) 20 AFC positive output
FSI 21 field strength indicator
VCC2 22 supply voltage for tuning
VDDD 23 digital supply voltage
MO/ST 24 mono/stereo and tuning indication output
XTAL 25 crystal input
DGND 26 digital ground
BUS-CLOCK 27 bus-clock input
DATA 28 bus data input/output
WRITE-ENABLE 29 bus write-enable input
P0 30 programmable output port (P0)
P1 31 programmable output port (P1)
AFC 32 450 kHz LC-input circuit for AM AFC
FM-IFI2 33 FMIF input 2 (input impedance typical 330 Ω)
VSTAB(B) 34 internal stabilized supply voltage (B)
FM-IFO1 35 FMIF output 1 (input impedance typical 330 Ω)
AM-IFI/O2 36 input/output to IFT; output: current source
FM-IFI1 37 FMIF input 1 (input impedance typical 330 Ω)
VSTAB(A) 38 internal stabilized supply voltage (A)
FM-ON/OFF 39 FM ON/OFF port
AM-MIXER 40 open-collector output to IFT
1999 Aug 04 6
Philips Semiconductors Product specification
Self Tuned Radio (STR) TEA5762
AM-IFI1 41 IFT or ceramic filter input (input impedance typical 3 kΩ)
RFGND 42 FMRF ground
n.c. 43 not connected
AGC 44 AGC capacitor input
SYMBOL PIN DESCRIPTION
Fig.2 Pin configuration.
handbook, full pagewidth
TEA5762H
MBE820
1
2
3
4
5
6
7
8
9
10
11
33
32
31
30
29
28
27
26
25
24
23
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
RIPPLE
AM-RFI
RFGND
CGND
COUNTI
AMOSC
VCC1
TUNE
VCO
AFO
MPXI
FM-IFI2
AFC
P1
P0
WRITE-ENABLE
DATA
BUS-CLOCK
DGND
XTAL
MO/ST
VDDD
LFI
MUTE
AFLO
AFRO
PILFIL
IFGND
FMDEM
AFC(n)
AFC(p)
FSI
VCC2
AGC
n.c.
RFGND
AM-IFI1
AM-MIXER
FM-ON/OFF
VSTAB(A)
FM-IFI1
AM-IFI/O2
FM-IFO1
VSTAB(B)
1999 Aug 04 7
Philips Semiconductors Product specification
Self Tuned Radio (STR) TEA5762
FUNCTIONAL DESCRIPTION
The TEA5762 is an integrated radio circuit with
AM-receiver and FM-IF part with demodulator and stereo
decoder. The circuit includes digital tuning and control
functions.
The radio
The AM circuit incorporates a double balanced mixer, a
one-pin low-voltage oscillator (up to 30 MHz) and is
designed for distributed selectivity.
The AM input is designed to be connected to the top of a
tuned circuit. AGC controls the IF amplification and for
large signals it lowers the input impedance of the AM
front-end.
The first AM selectivity can be an IF-Tank (IFT) as well as
anIFTcombined with a ceramicfilter;thesecond one is an
IFT.
For FM operation an external FM front-end is necessary.
This is switched on and off by the FM-ON/OFF signal
which is generated in the bus system.
The AFC circuit in the TEA5762 provides a tuning voltage
to drive the VCO of the external FM front-end.
The frequency of the external VCO is counted in the Self
Tuned Radio (STR) tuning system.
The FM-IF circuit is designed for distributed IF ceramic
filters. The FM quadratic detector uses a ceramic
resonator.
The PLL stereo decoder incorporates a signal dependent
stereo-blend circuit and a soft-mute circuit.
Tuning
Thetuning-concept of SelfTunedRadio (STR)isbased on
FUZZY LOGIC: it mimics hand tuning (hand tuning is a
combination of coarse and fine tuning to the qualitatively
best frequency position). As a consequence the tuning
system is very fast.
The tuning algorithm, which is controlled by the sequential
circuit (see Fig.1), is completely integrated; so there are
only a few external components needed.
The bus and the microcontroller can be kept very simple.
The bus only consists of three wires (BUS-CLOCK, DATA
and WRITE-ENABLE). The microcontroller must basically
give two instructions:
•Preset operation
•Search operation.
PRESET OPERATION
Inpresetmode, the microcontroller has to load information
suchasfrequencyband,frequencyandmono/stereo.This
information has to be sent via the bus to the STR.
The internal algorithm controls the tuning sequence as
follows:
1. The information is loaded into a shift register, a
last-station memory and the counter.
2. The Automatic Frequency Control (AFC) is switched
off.
3. The counter starts counting the VCO frequency and
the tuning voltage is varied until the desired frequency
roughly equals the real frequency.
4. The AFC is then switched on and the counter is
switched off.
5. The real frequency is more precisely tuned to the
desired frequency.
After the AFC has tuned the real frequency to the desired
frequency an in-lock signal can be generated. In order to
get a reliable in-lock signal, there are two parameters
measured: the field strength and the S-curve. The field
strength indicates the strength of the station and by
looking at the S-curve the system can distinguish false
in-locks from real in-locks (false in-locks occur on the
wrong slope of the S-curve).
In the FM mode the tuning voltage controls the VCO of the
external FM front-end and the frequency of the VCO is
counted in the TEA5762.
In the event of fading or pulling the in-lock signal becomes
logic 0 and the synthesizer will be switched-on again and
the algorithm will be repeated.
SEARCH OPERATION
During a search operation, the only action the
microcontroller has to take is: sending the desired band
plus the direction and the search sensitivity level to the
STR. The search operation is performed by the charge
pump until an in-lock signal is generated (combination of
measuring the field strength and the S-curve). The AFC
then fine tunes to the station. The frequency belonging to
thefound station willbecountedby the counterandwritten
into the last-station memory and the shift register of the
counter. At this time the frequency is available in the shift
register and can be read by the microcontroller. The
microcontrollerdecideswhetherthefrequencyiswithinthe
desiredfrequency band. Ifso,this frequencycanbe stored
under a preset and if not, a new search action should be
started.
1999 Aug 04 8
Philips Semiconductors Product specification
Self Tuned Radio (STR) TEA5762
To ensure that the search function operates correctly
under all conditions the following search sequence must
be applied:
•Store the current frequency in the memory
•Issue the search command
•Wait for data valid and read the new frequency
•If the new frequency is the same as the stored
frequency, issue a pre-set step (e.g. 50 kHz) and start
the search sequence again.
Description of the bus
The TEA5762 radio has a bus which consists of three
wires, as shown in Table 1.
Table 1 Bus signals
SIGNAL DESCRIPTION PIN
BUS-CLOCK software driven clock input 27
DATA data input/output 28
WRITE-ENABLE write/read-input 29
These three signals, together with the mono/stereo pin
(MO/ST; pin 24), communicate with the microcontroller.
The mono/stereo indicator has two functions, which are
controlled by the BUS-CLOCK, as shown in Table 2.
Table 2 Bus-clock functions
TheTEA5762 has a25-bitshift register;see Table 3for an
explanation of the shift register bits.
If in search mode no transmitter can be found, all
frequency bits of the shift register are set to logic 0.
The bus protocol is depicted in Figs 3 and 4.
BUS-CLOCK MO/ST (PIN 24) RESULT
LOW LOW stereo
LOW HIGH mono
HIGH LOW tuned
HIGH HIGH not tuned
Table 3 Explanation of the shift register bits
BIT DESCRIPTION LOGIC
STATE RESULT
S.24 (MSB) search start/end 0 after a search when a station is found or after a preset
1 during the search action
D.23 search up/down 0 indicates if the radio has to search down
1 indicates if the radio has to search up
M.22 mono/stereo 0 stereo is allowed
1 mono is required (radio switched to forced mono)
B0.21 band see Table 4 selects FM/MW/LW/SW band
B1.20 band see Table 4 selects FM/MW/LW/SW band
P0.19 port note 1 user programmable bits which e.g. can be used as band
switch driver
P1.18 port note 1 user programmable bits which e.g. can be used as band
switch driver
S0.17 search-level of station see Table 5 determines the locking field strength during an
automatic search, automatic store or manual search
S1.16 search-level of station see Table 5 determines the locking field strength during an
automatic search, automatic store or manual search
15 dummy −buffer
F.14 to F.0 (LSB) frequency −determine the tuning frequency of the radio; see Table 6
for the bit values
1999 Aug 04 9
Philips Semiconductors Product specification
Self Tuned Radio (STR) TEA5762
Note
1. The output pins 30 and 31 can drive currents up to
5 mA; bits 19 (P0) and 18 (P1) control the output
voltage of the control pins P0 (pin 30) and P1 (pin 31):
a) Bit 19 (P0) LOW sets P0 (pin 30) to LOW.
b) Bit 19 (P0) HIGH sets P0 (pin 30) to HIGH.
c) Bit 18 (P1) LOW sets P1 (pin 31) to LOW.
d) Bit 18 (P1) HIGH sets P1 (pin 31) to HIGH.
Table 4 Truth table for bits 21 and 20
Note
1. When FM is selected, the control output FM-ON/OFF
is set LOW to switch on the external FM front-end.
Table 5 Truth table for bits 16 and 17
Note
1. The given values for signal reception are
corresponding to a −3 dB point of 20 µV for FM.
Table 6 Values for bits 14 to 0
Notes
1. FM value of the affected oscillators:
FM VALUE = FMRF + FMIF.
2. AM value of the affected oscillators:
AM VALUE = AMRF + AMIF.
B0 B1 BAND SELECT
00FM
(1)
01MW
10LW
11SW
S1 S0 SIGNAL RECEPTION(1)
FM IF INPUT
(µV) AM RF INPUT
(µV)
0 0 >50 >28
0 1 >100 >40
1 0 >300 >63
1 1 >1500 >1000
BIT BIT VALUE FM
VALUE(1)
(kHz)
AM
VALUE(2)
(kHz)
14 214 −16384
13 213 102400 8192
12 212 51200 4096
11 211 25600 2048
10 210 12800 1024
92
96400 512
82
83200 256
72
71600 128
62
6800 64
52
5400 32
42
4200 16
32
3100 8
22
250 4
12
125 2
02
012.5 1
1999 Aug 04 10
Philips Semiconductors Product specification
Self Tuned Radio (STR) TEA5762
READING DATA
While WRITE-ENABLE is LOW data can be read by the
microcontroller. At a rising edge of the BUS-CLOCK, data
is shifted out of the register. This data is available from the
point where the BUS-CLOCK is HIGH until the next rising
edge of the BUS-CLOCK occurs (see Fig.3).
To read the entire shift register 24 clock pulses are
necessary.
WRITING DATA
While WRITE-ENABLE is HIGH the microcontroller can
transmit data to the TEA5762 (hard mute is active). At a
rising edge of the BUS-CLOCK, the register shifts and
acceptsone bit into LSB. At clock LOW the microcontroller
writes data (see Fig.4).
To write the entire shift register 25 clock pulses are
necessary.
Fig.3 Read data.
handbook, full pagewidth
WRITE-ENABLE
BUS-CLOCK
DATA
data read
data available
data shiftdata available after search ready
MSB is LOW
MBE817
Fig.4 Write data.
handbook, full pagewidth
data changedata shift
MBE818
WRITE-ENABLE
BUS-CLOCK
DATA
1999 Aug 04 11
Philips Semiconductors Product specification
Self Tuned Radio (STR) TEA5762
BUS TIMING
Table 7 Digital inputs
SYMBOL PARAMETER MIN. MAX. UNIT
Digital inputs
VIH HIGH-level input voltage 1.4 −V
VIL LOW-level input voltage −0.6 V
Timing
fclk clock input −300 kHz
tHIGH clock HIGH time 1.67 −µs
t
LOW clock LOW time 1.67 −µs
t
da shift register available after ‘search ready’ −14 µs
Fig.5 Bus timing.
handbook, full pagewidth
tHIGH tLOW
tda
VIH
VIL
MBE819
WRITE-ENABLE
BUS-CLOCK
DATA
1999 Aug 04 12
Philips Semiconductors Product specification
Self Tuned Radio (STR) TEA5762
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Charge device model; equivalent to discharging a 200 pF capacitor via a 0 Ω series resistor.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCC1 supply voltage 0 13.2 V
Ptot total power dissipation Tamb =70°C−250 mW
Tstg storage temperature −65 +150 °C
Tamb operating ambient temperature −15 +60 °C
Tjoperating junction temperature −15 +150 °C
Ves electrostatic handling for all pins note 1 −±200 V
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth(j-a) thermal resistance from junction to ambient in free air 65 K/W
1999 Aug 04 13
Philips Semiconductors Product specification
Self Tuned Radio (STR) TEA5762
CHARACTERISTICS
VCC1 =3V; T
amb =25°C; unless otherwise specified.
Note
1. Depending on band.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VCC1 supply voltage 2.5 −12 V
VCC2 supply voltage for tuning −−12 V
VDDD supply voltage for digital part 2.5 −12 V
Vtune tuning voltage 0.7 −VCC2 −0.75 V
ICC2 supply current for tuning in preset
mode (band-end to band-end) −−800 µA
fBUS-CLOCK(max) maximum BUS-CLOCK frequency −−300 kHz
ICC1 currentconsumptionduring acquisition
of VCC1
AM mode 12 15 18 mA
FM mode 12.5 15.5 18.5 mA
IDD currentconsumptionduring acquisition
of IDD
AM mode −4.8 −mA
FM mode −5.5 −mA
ICC1 current consumption after acquisition
of VCC1
AM mode 12 15 18 mA
FM mode 13 16 19 mA
IDD current consumption after acquisition
of IDD
AM mode −3.2 −mA
FM mode −2.7 −mA
tsearch synthesizerauto-search time forempty
band FM mode −−10 s
tacq synthesizer preset acquisition time
between two band limits FM −100 −ms
MW −100 −ms
LW −200 −ms
SW −500(1) −ms
fband frequency band range of the
synthesizer AM mode 0.144 −30 MHz
∆fFM AFC inaccuracy of FM with Mitsumi
front-end −−1 kHz
∆fAM AFC inaccuracy of AM −−100 Hz
IP0/P1(sink) sink current of software programmable
output P0/P1 VCC1 =5V 4 6 −mA
IP0/P1(source) source current of software
programmable output P0/P1 VCC1 =5V 5 9 −mA
1999 Aug 04 14
Philips Semiconductors Product specification
Self Tuned Radio (STR) TEA5762
AM CHARACTERISTICS
Input frequency = 1 MHz; m = 0.3; fmod = 1 kHz; measured in test circuit at pin 10 (see Fig.9); S2 in position B;
Vi1 measured at input of matching network at pin 2; matching network adjusted to maximum output voltage at low input
level; refer to test circuit (see Fig.9); unless otherwise specified.
FM-IF CHARACTERISTICS
Input frequency = 10.7 MHz; ∆f = 22.5 kHz; fmod = 1 kHz; measured in test circuit (see Fig.9) at pin 10; S2 in position B;
refer to test circuit (see Fig.9); unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V10 AF output voltage Vi1 =5mV 364570mV
V
i1 RF sensitivity S/N = 26 dB 40 55 70 µV
Vil large signal voltage handling
capacity m = 0.8; THD ≤8% 150 300 −mV
PSRR power supply ripple rejection ∆V7= 100 mV (RMS);
100 Hz; V7= 3.0 V −−47 −dB
Iiinput current (pin 2) V44 = 0.2 V −0−µA
C
iinput capacitance (pin 2) V44 = 0.2 V −−4pF
G
cfront-end conversion gain V44 = 0.2 V 5 10 14 dB
V44 = 0.9 V −26 −14 0 dB
S/N signal-to-noise ratio −50 −dB
THD total harmonic distortion Vi1 =1mV −0.8 2.0 %
α450 IF suppression V10 =30mV −56 −dB
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V10 AF output voltage Vi4 =10mV 404857mV
V
i4 IF limiting sensitivity V10 =−3 dB; V10 = 0 dB at
Vi4 =10mV −50 80 µV
PSRR power supply ripple rejection ∆V7= 100 mV (RMS);
100 Hz; V7= 3.0 V −44 −−dB
S/N signal-to-noise ratio Vi4 =10mV 62 − − dB
THD total harmonic distortion IF filter SFE10.7MS3A20K-A −0.3 0.8 %
V10
∆V7
----------
V
10
∆V7
----------
1999 Aug 04 15
Philips Semiconductors Product specification
Self Tuned Radio (STR) TEA5762
STEREO DECODER CHARACTERISTICS
Vi3(L + R) = 155 mV; Vpilot = 15.5 mV; f = 1 kHz; apply unmodulated RF-signal of 100 mV to front-end to set radio to
maximum channel separation; soft mute off (S4 in position A); unless otherwise specified.
TUNING CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V14/15 AF output voltage −160 −mV
Vpilot(s) switch to stereo −812mV
V
pilot(m) switch to mono 2 5 −mV
VAF-L/Vi3 MPX voltage gain −1.5 −+1.5 dB
S/N signal-to-noise ratio Vpilot = 15.5 mV (stereo) −74 −dB
THD total harmonic distortion −0.5 1.0 %
αcs channel separation 26 30 −dB
α19 carrier and harmonic suppression 19 kHz (200 mV) = 0 dB 27 32 −dB
α38 38 kHz 16 21 −dB
αstereo-blend Vi4 =5mV 22 30 −dB
Vi4 = 200 µV−12dB
mute(s) soft mute depth Vi4 =30µV; V14 =V
15 −10 −dB
Vi4 =10µV; V14 =V
15 −−6−10 dB
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VFM FM voltage levels α−3dB
-point at Vi4 =20µV
high (auto-store/search) S0 = 1; S1 = 1 600 1500 5000 µV
medium (auto-store/search) S0 = 0; S1 = 1 100 300 550 µV
low (auto-store/search) S0 = 1; S1 = 0 40 100 200 µV
nominal (preset mode/tuning indication) S0 = 0; S1 = 0 30 50 90 µV
VAM AM voltage levels α−3dB
-point at Vi4 =20µV
high (auto-store/search) S0 = 1; S1 = 1 400 1000 2500 µV
medium (auto-store/search) S0 = 0; S1 = 1 50 63 80 µV
low (auto-store/search) S0 = 1; S1 = 0 32 40 50 µV
nominal (preset mode/tuning indication) S0 = 0; S1 = 0 25 28 40 µV
VAFC(off) AFC voltage off mode α−3dB
-point at Vi4 =20µV
FM mode −3−µV
AM mode −25 −µV
mute(h) hard mute WRITE-ENABLE = HIGH −60 −dB
1999 Aug 04 16
Philips Semiconductors Product specification
Self Tuned Radio (STR) TEA5762
This text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here in
_white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here inThis text is here in
white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader. white to force landscape pages to be ...
Fig.6 AM mode.
handbook, full pagewidth
10−710−610−510−410−310−210−11
(3)
(2)
(1)
0
1
2
3
4
5
6
7
8
9
120100806040200−20
THD
(%)
Vi1 (V)
(dBµV)
10
0
−10
−20
−30
−40
−50
−60
−70
−80
(dB)
MBE853
(1) Audio signal.
(2) Noise.
(3) Harmonic distortion.
1999 Aug 04 17
Philips Semiconductors Product specification
Self Tuned Radio (STR) TEA5762
This text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here in
_white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here inThis text is here in
white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader. white to force landscape pages to be ...
Fig.7 FM mode.
(1) Mono signal.
(2) Noise in mono mode.
(3) Left channel with modulation left.
(4) Right channel with modulation left.
(5) Noise in stereo mode.
(6) Harmonic distortion ∆f = 75 kHz.
(7) Total harmonic distortion ∆f = 22.5 kHz.
handbook, full pagewidth
10−610−510−410−310−210−110
1
2
3
4
5
6
7
8
9
120100806040200
THD
(%)
Vi1 (V)
(dBµV)
10
0(1)
(2)
(3)
(4)
(5)
(6)
(7)
−10
−20
−30
−40
−50
−60
−70
−80
(dB)
MBE854
1999 Aug 04 18
Philips Semiconductors Product specification
Self Tuned Radio (STR) TEA5762
INTERNAL CIRCUITRY
Table 8 Equivalent pin circuits and pin voltages
PIN SYMBOL DC VOLTAGE
(V) EQUIVALENT CIRCUIT
AM FM
1 RIPPLE 2.1 2.1
2 AM-RFI 0 0
3 RFGND −−
4 CGND 0 0
5 COUNTI 0 0
6 AMOSC 0 0
7V
CC1 3.0 3.0
70 pF
17
1
7
1 kΩ
3 kΩ
MBE821
4
2
MBE822
5
4
MBE823
6
4
MBE824
1999 Aug 04 19
Philips Semiconductors Product specification
Self Tuned Radio (STR) TEA5762
8 TUNE −−
9 VCO 1.3 0.95
10 AFO 0.6 0.7
11 MPXI 1.23 1.23
PIN SYMBOL DC VOLTAGE
(V) EQUIVALENT CIRCUIT
AM FM
22
26
8
MBE825
1 kΩ
10 kΩ
9
17
MBE826
5 kΩ
10
17
MBE827
9.5 kΩ
150 kΩ150 kΩ
11
17
MBE828
1999 Aug 04 20
Philips Semiconductors Product specification
Self Tuned Radio (STR) TEA5762
12 LFI 0.1 0.8
13 MUTE 0.7 0.7
14 AFLO 0.65 0.65
15 AFRO 0.65 0.65
PIN SYMBOL DC VOLTAGE
(V) EQUIVALENT CIRCUIT
AM FM
4 kΩ
13 kΩ
12
17
MBE829
7 kΩ50 kΩ
13
17
MBE830
5 kΩ
14
17
MBE831
5 kΩ
15
17
MBE832
1999 Aug 04 21
Philips Semiconductors Product specification
Self Tuned Radio (STR) TEA5762
16 PILFIL 0.95 0.95
17 IFGND 0 0
18 FMDEM −1.0
19 AFC(n) −−
20 AFC(p) −−
21 FSI −−
22 VCC2 −−
23 VDDD 3.0 3.0
PIN SYMBOL DC VOLTAGE
(V) EQUIVALENT CIRCUIT
AM FM
10 kΩ10 kΩ
16
17
MBE833
180 Ω
910 Ω
18
17
MBE834
10 kΩ10 kΩ
19/20
MBE835
40 kΩ
12 to 34 kΩ
(dependent on
bits 16 and 17)
21
26
1.4 V
MBE836
1999 Aug 04 22
Philips Semiconductors Product specification
Self Tuned Radio (STR) TEA5762
24 MO/ST −−
25 XTAL −−
26 DGND 0 0
27 BUS-CLOCK −−
28 DATA −−
29 WRITE-
ENABLE −−
PIN SYMBOL DC VOLTAGE
(V) EQUIVALENT CIRCUIT
AM FM
24
26
100 Ω
MBE837
50 kΩ50 kΩ50 kΩ
25
26
MBE838
27
26
MBE839
28
29
26
MBE840
100 Ω
50 kΩ
100 kΩ
1999 Aug 04 23
Philips Semiconductors Product specification
Self Tuned Radio (STR) TEA5762
30 P0 −−
31 P1 −−
32 AFC −−
33 FM-IF12 −0.73
PIN SYMBOL DC VOLTAGE
(V) EQUIVALENT CIRCUIT
AM FM
MHA108
30
23
20 kΩ
100 kΩ
120 Ω
26
MHA109
31
23
20 kΩ
100 kΩ
120 Ω
26
MBE842
32
34
20 kΩ
MBE843
33
17
34
2.2 kΩ
140 Ω
6 pF
1999 Aug 04 24
Philips Semiconductors Product specification
Self Tuned Radio (STR) TEA5762
34 VSTAB(B) 1.4 1.4
35 FM-IFO1 −0.69
36 AM-IFI/O2 1.4 1.4
37 FM-IFI1 −0.73
38 VSTAB(A) 1.4 1.4
PIN SYMBOL DC VOLTAGE
(V) EQUIVALENT CIRCUIT
AM FM
MBE844
1
34
7
1 kΩ
MBE845
34
35 560 Ω
MBE846
36
17
34
3.6 kΩ3.6 kΩ
MBE847
37
17
38
1.9 kΩ
140 Ω
6 pF
MBE848
1
38
7
1 kΩ
1999 Aug 04 25
Philips Semiconductors Product specification
Self Tuned Radio (STR) TEA5762
39 FM-ON/OFF −−
40 AM-MIXER 1.4 1.4
41 AM-IF1I 1.4 1.4
42 RFGND2 0 0
43 n.c. −−
44 AGC 0.1 0.7
PIN SYMBOL DC VOLTAGE
(V) EQUIVALENT CIRCUIT
AM FM
MBE849
26
39 500 Ω
MBE850
40
38
MBE851
41
17
38
7.5 kΩ
3 kΩ
7.5 kΩ
MBE852
17
44
1 kΩ
1 kΩ1 kΩ
1999 Aug 04 26
Philips Semiconductors Product specification
Self Tuned Radio (STR) TEA5762
This text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here in
_white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here inThis text is here in
white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader. white to force landscape pages to be ...
TEST AND APPLICATION INFORMATION
handbook, full pagewidth
100
µF
220 nF
100 nF
VSTAB(A)
VSTAB(B)
GND
TUNE
10 Ω
68 kΩ
10 kΩ
47 kΩ
120 Ω
150 Ω
150 kΩ
220 kΩ
220 Ω
150 Ω
47 kΩ
75 kHz
25
4
5
23
1
26
2
VSTAB(A)
VSTAB(A)
VSTAB(B)
VCC2
L1
18 pF
18 pF
470 pF BB112
TUNE
P0 TUNE
P1
470 nF 10 nF
10 µF
4.7 µF
L4
L2
6404136443130822
32
20
19
13
15
14
9
12
24
16
1817
2728293335
37
39
38
34
7
21
10 11 3
VSTAB(B)
L5
68 kΩ
2.2 kΩ
10 kΩ
50 kΩ
470 nF
470 nF
100 nF
100 nF
12 nF
12 nF
VCC1
MO/ST
AFLO
AFRO
WRITE-
ENABLE
DATA BUS-
CLOCK K3
100 nF
2.2 µF
VCC1
K1
VSTAB(B)
K2
L3
470 nF
OSC-OUT
IF-OUT
VCC
VTUNE
GND
AGC
ANT
n.c. 470
pF
330 pF
220 nF
18 pF
BB112
22 nF
FM front-end
Mitsumi FE415-G11
TEA5762
MBE816
(6)
(7)
(8)
(5)
(4)
(3)
(1)
(2)
(9)
(9)
(11)
(11)
(10)
Fig.8 Application diagram.
See Table 9 for figure notes.
1999 Aug 04 27
Philips Semiconductors Product specification
Self Tuned Radio (STR) TEA5762
This text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here in
_white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here inThis text is here in
white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader. white to force landscape pages to be ...
handbook, full pagewidth
PRESCALER
PROGRAMMABLE
COUNTER
STABILIZER
WINDOW
DETECTOR
LAST-STATION
MEMORY
AM/FM
INDICATOR
IN-LOCK
DETECTOR
FM
DETECTOR PILOT
DETECTOR
CHARGE
PUMP
MULTIPLEXER
CRYSTAL
OSCILLATOR
SHIFT REGISTER
TUNER
SWITCH FM
IF1 FM
IF2
SEQUENTIAL
CIRCUIT
STATUS
REGISTER
100
µF
220 nF
100 nF
AM
FRONT
END
AM
OSCILLATOR AM
DETECTOR V/I
CONVERTER
AM
MIXER AM
IF AGC
AFC
hard mute level
PLL
DECODER
MATRIX
SDS MUTE
up
down
level
680 pF
FM-ON/OFF
VSTAB(A)
VSTAB(B)
TUNE
DGND
18 kΩ
50 Ω
50 Ω
10 Ω
330 Ω
50 Ω43 Ω
6.8 Ω
47 kΩ
50 Ω
3 kΩ
50 Ω
50 Ω
5 kΩ
75 kHz 25
4
(6)
(1)
(10)
(11)
(11)
(9)
(2)
(3)
(4)
(5)
(8)
(7)
5
23
1
26
2
BB804
10
pF L6
1 MHz
Vi1
VSTAB(A)
VSTAB(B)
VSTAB(B) VCC2
Vi2
Vi3
L1
18 pF
18 pF
470 pF
BB112
TUNE
450 kHz
P0 TUNEP1
MPXI
330 pF
220 nF
470 nF 10 nF
10 µF
4.7 µF
S3
S2
A
A
B
B
L4
A
S1
B
L2
6404136443130822
32
20
19
13
15
14
9
12
24
16
1817272829333537
39
38
34
7
21
10 11 3
VSTAB(B)
L5
68 kΩ
8.2 kΩ
2.2 kΩ
10 kΩ
50 kΩ
470 nF
470 nF
100 nF
100 nF
12 nF
12 nF
VCC1
MO/ST
AFLO
AFRO
stereo
stereo
mono
38 kHz
19 kHz
10.7 MHz 1 nF
WRITE-
ENABLE
DATA BUS-
CLOCK K2
100 nF
2.2 µF
VCC1
Vi4
K1
L3
220 µF
470 nF
BA
S4
TEA5762
FM
AM
MBE814
Fig.9 Test circuit.
See Table 9 for figure notes.
1999 Aug 04 28
Philips Semiconductors Product specification
Self Tuned Radio (STR) TEA5762
Table 9 Test and application components
FIGURE NOTE DESCRIPTION
Application diagram; see Fig.8
1 L1 = 250 mH ferroceptor
2 L2 = 7P 7DRS-11459N, 110 µH at 796 kHz, Q = 80 TOKO
3 L3 = 7PA7MCS-11844N, C = 180 pF, Q = 90 TOKO
4 L4 = 7PA7MCS-11845Y, C = 180 pF, Q = 90 TOKO
5 L5 = 7PA7MCS-11845Y, C = 180 pF, Q = 90 TOKO
6 K1 = SFE10.7MS3 MURATA
7 K2 = SFE10.7MS3 MURATA
8 K3 = CDA10.7-MG40-A discriminator ∆f = 20 kHz MURATA
9 alternatively BB512 (Siemens) or KV1561A TOKO
10 standard application: ±30 ppm at Tamb =25°C
short wave application: ±20 ppm at Tamb =25°C
11 de-emphasis time constant is 50 µs: Cdeem =12nF
de-emphasis time constant is 75 µs: Cdeem =18nF
Test circuit; see Fig.9
1 K1 = SFE10.7MS3 MURATA
2 K2 = CDA10.7-MG40-A discriminator ∆f = 20 kHz MURATA
3 L1 = 22281-30091
4 L2 = 7P 7DRS-11459N, 110 µH at 796 kHz, Q = 80 TOKO
5 L3 = 7PA7MCS-11844N, C = 180 pF, Q = 90 TOKO
6 L4 = 7PA7MCS-11845Y, C = 180 pF, Q = 90 TOKO
7 L5 = 7PA7MCS-11845Y, C = 180 pF, Q = 90 TOKO
8 L6 = S18 301SS-0200
9 standard application: ±30 ppm at Tamb =25°C
short wave application: ±20 ppm at Tamb =25°C
10 alternatively BB512 (Siemens) or KV1561A TOKO
11 de-emphasis time constant is 50 µs: Cdeem =12nF
de-emphasis time constant is 75 µs: Cdeem =18nF
1999 Aug 04 29
Philips Semiconductors Product specification
Self Tuned Radio (STR) TEA5762
PACKAGE OUTLINE
UNIT A1A2A3bpcE
(1) eH
E
LL
pZywv θ
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
mm 0.25
0.05 1.85
1.65 0.25 0.40
0.20 0.25
0.14 10.1
9.9 0.8 1.3
12.9
12.3 1.2
0.8 10
0
o
o
0.15 0.10.15
DIMENSIONS (mm are the original dimensions)
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
0.95
0.55
SOT307-2 95-02-04
97-08-01
D(1) (1)(1)
10.1
9.9
HD
12.9
12.3
E
Z
1.2
0.8
D
e
E
B
11
c
E
H
D
ZD
A
ZE
e
vMA
X
1
44
34 33 23 22
12
y
θ
A1
A
Lp
detail X
L
(A )
3
A2
pin 1 index
D
HvMB
bp
bp
wM
wM
0 2.5 5 mm
scale
QFP44: plastic quad flat package; 44 leads (lead length 1.3 mm); body 10 x 10 x 1.75 mm SOT307-2
A
max.
2.10
1999 Aug 04 30
Philips Semiconductors Product specification
Self Tuned Radio (STR) TEA5762
SOLDERING
Introduction to soldering surface mount packages
Thistext givesavery briefinsight toacomplex technology.
A more in-depth account of soldering ICs can be found in
our
“Data Handbook IC26; Integrated Circuit Packages”
(document order number 9398 652 90011).
There is no soldering method that is ideal for all surface
mount IC packages. Wave soldering is not always suitable
for surface mount ICs, or for printed-circuit boards with
high population densities. In these situations reflow
soldering is often used.
Reflow soldering
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
tothe printed-circuit board by screenprinting,stencillingor
pressure-syringe dispensing before package placement.
Several methods exist for reflowing; for example,
infrared/convection heating in a conveyor type oven.
Throughput times (preheating, soldering and cooling) vary
between 100 and 200 seconds depending on heating
method.
Typical reflow peak temperatures range from
215 to 250 °C. The top-surface temperature of the
packages should preferable be kept below 230 °C.
Wave soldering
Conventional single wave soldering is not recommended
forsurfacemountdevices (SMDs)or printed-circuitboards
with a high component density, as solder bridging and
non-wetting can present major problems.
To overcome these problems the double-wave soldering
method was specifically developed.
If wave soldering is used the following conditions must be
observed for optimal results:
•Use a double-wave soldering method comprising a
turbulent wave with high upward pressure followed by a
smooth laminar wave.
•For packages with leads on two sides and a pitch (e):
– larger than or equal to 1.27 mm, the footprint
longitudinal axis is preferred to be parallel to the
transport direction of the printed-circuit board;
– smaller than 1.27 mm, the footprint longitudinal axis
must be parallel to the transport direction of the
printed-circuit board.
The footprint must incorporate solder thieves at the
downstream end.
•Forpackageswithleads onfour sides,thefootprintmust
be placed at a 45°angle to the transport direction of the
printed-circuit board. The footprint must incorporate
solder thieves downstream and at the side corners.
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
Manual soldering
Fix the component by first soldering two
diagonally-opposite end leads. Use a low voltage (24 V or
less) soldering iron applied to the flat part of the lead.
Contact time must be limited to 10 seconds at up to
300 °C.
When using a dedicated tool, all other leads can be
soldered in one operation within 2 to 5 seconds between
270 and 320 °C.
1999 Aug 04 31
Philips Semiconductors Product specification
Self Tuned Radio (STR) TEA5762
Suitability of surface mount IC packages for wave and reflow soldering methods
Notes
1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum
temperature (with respect to time) and body size of the package, there is a risk that internal or external package
cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the
Drypack information in the
“Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”
.
2. These packages are not suitable for wave soldering as a s
3. older joint between the printed-circuit board and heatsink (at bottom version) can not be achieved, and as solder may
stick to the heatsink (on top version).
4. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction.
The package footprint must incorporate solder thieves downstream and at the side corners.
5. Wave soldering is only suitable for LQFP, TQFP and QFP packages with a pitch (e) equal to or larger than 0.8 mm;
it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.
6. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is
definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
PACKAGE SOLDERING METHOD
WAVE REFLOW(1)
BGA, SQFP not suitable suitable
HLQFP, HSQFP, HSOP, HTSSOP, SMS not suitable(2) suitable
PLCC(4), SO, SOJ suitable suitable
LQFP, QFP, TQFP not recommended(4)(5) suitable
SSOP, TSSOP, VSO not recommended(6) suitable
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
© Philips Electronics N.V. SCA
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Internet: http://www.semiconductors.philips.com
1999 67
Philips Semiconductors – a w orldwide compan y
For all other countries apply to: Philips Semiconductors,
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
Argentina: see South America
Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140,
Tel. +61 2 9704 8141, Fax. +61 2 9704 8139
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213,
Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,
220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 0773
Belgium: see The Netherlands
Brazil: see South America
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,
51 James Bourchier Blvd., 1407 SOFIA,
Tel. +359 2 68 9211, Fax. +359 2 68 9102
Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. +1 800 234 7381, Fax. +1 800 943 0087
China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. +852 2319 7888, Fax. +852 2319 7700
Colombia: see South America
Czech Republic: see Austria
Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V,
Tel. +45 33 29 3333, Fax. +45 33 29 3905
Finland: Sinikalliontie 3, FIN-02630 ESPOO,
Tel. +358 9 615 800, Fax. +358 9 6158 0920
France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex,
Tel. +33 1 4099 6161, Fax. +33 1 4099 6427
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,
Tel. +49 40 2353 60, Fax. +49 40 2353 6300
Hungary: see Austria
India: Philips INDIA Ltd, Band Box Building, 2nd floor,
254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,
Tel. +91 22 493 8541, Fax. +91 22 493 0966
Indonesia: PTPhilipsDevelopmentCorporation, SemiconductorsDivision,
Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,
Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080
Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. +353 1 7640 000, Fax. +353 1 7640 200
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007
Italy: PHILIPS SEMICONDUCTORS, Via Casati, 23 - 20052 MONZA (MI),
Tel. +39 039 203 6838, Fax +39 039 203 6800
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,
TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5057
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. +82 2 709 1412, Fax. +82 2 709 1415
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087
Middle East: see Italy
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,
Tel. +31 40 27 82785, Fax. +31 40 27 88399
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,
Tel. +64 9 849 4160, Fax. +64 9 849 7811
Norway: Box 1, Manglerud 0612, OSLO,
Tel. +47 22 74 8000, Fax. +47 22 74 8341
Pakistan: see Singapore
Philippines: Philips Semiconductors Philippines Inc.,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474
Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,
Tel. +48 22 612 2831, Fax. +48 22 612 2327
Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,
Tel. +7 095 755 6918, Fax. +7 095 755 6919
Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,
Tel. +65 350 2538, Fax. +65 251 6500
Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 58088 Newville 2114,
Tel. +27 11 471 5401, Fax. +27 11 471 5398
South America: Al. Vicente Pinzon, 173, 6th floor,
04547-130 SÃO PAULO, SP, Brazil,
Tel. +55 11 821 2333, Fax. +55 11 821 2382
Spain: Balmes 22, 08007 BARCELONA,
Tel. +34 93 301 6312, Fax. +34 93 301 4107
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 5985 2000, Fax. +46 8 5985 2745
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. +41 1 488 2741 Fax. +41 1 488 3263
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. +886 2 2134 2886, Fax. +886 2 2134 2874
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. +66 2 745 4090, Fax. +66 2 398 0793
Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye,
ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 208 730 5000, Fax. +44 208 754 8421
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381, Fax. +1 800 943 0087
Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 62 5344, Fax.+381 11 63 5777
Printed in The Netherlands 545002/02/pp32 Date of release: 1999 Aug 04 Document order number: 9397 750 06057
