T4-LDS-0006-1, Rev. 1 (111983) ©2011 Microsemi Corporation Page 1 of 5
2N5114UB thru 2N5116UB
Available on
commercial
versions
P-CHANNEL J -FET
Screening in
reference to
MIL-PRF-19500
available
DESCRIPTION
This low-pr ofile s urface mount devic e i s available in military equivalents for high-reliability
applications. Mic r osemi also offers numerous oth er products to meet higher and low er power
vol tage reg ulation ap plication s.
UB Package
Also available in:
TO-18 package
(leaded)
2N5114 – 2N5116
Important: For the latest information, vi sit our website http://www.microsemi.com.
FEATURES
• Sur face mount equiv alent to JEDEC registered 2N5114 thru 2N5116 series.
• Low-profi le cera mic sur face mount pa ckag e.
• Up-screening in reference to MIL-PRF-19500 is available. (See part nomenclature.)
• RoHS compliant versions available (commercial grade only).
APPLIC ATIONS / BENEFITS
• Low-profile UB package.
• Lightweight.
MAXIMUM RATIN GS @ TC = +25 oC unless otherwise n oted.
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: + 353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Parameters/Test Conditions
Symbol
Value
Unit
Junction and Storage Temperature
TJ and TSTG
-65 to +200
oC
Gate-Source Voltage (1)
VGS
30
V
Drain-Source Voltage
VDS
30
V
Drain-Gate Voltage (1)
VDG
30
V
Gate Current
IG
50
mA
Steady-State Power Dissipation @ TA = +25 oC (2)
PD
0.500
W
Notes: 1. Symmetrical geometry allows operation of those units with source / drain leads in terchanged.
2. De rate li near ly 3.0 mW/° C for TA > +25 °C.
T4-LDS-0006-1, Rev. 1 (111983) ©2011 Microsemi Corporation Page 2 of 5
2N5114UB thru 2N5116UB
MECHANICAL a n d PACKAGING
• CASE: Ceramic.
• TERMINALS: Gold plating over nickel underpl ate. RoHS compliant matte/tin available on commercial grade only.
• MARKING: Part number, date code, manufacturer’s ID.
• TAPE & REEL option: Standard per EIA-418D. Consult factory for quantities.
• WEIGHT: < 0.04 grams.
• See Package Dimensions on last page.
PART NOME NCL AT URE
MX 2N5114 UB (e3)
Reliability Level
MQ (reference JAN)
MX (reference JANTX)
MV (reference JANTXV)
Blank = Commerci al
JEDEC type number
(see Electrical Characteristics
table)
RoHS Compli ance
e3 = RoHS Compliant (available
on commercial grade only)
Blank = non-RoHS Compliant
Surface Mount Package
T4-LDS-0006-1, Rev. 1 (111983) ©2011 Microsemi Corporation Page 3 of 5
2N5114UB thru 2N5116UB
ELECTRICAL CHARACTERI STI CS @ TA = +25 oC unless oth er wis e noted.
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Gate-Source Breakdown Voltage
VDS = 0, IG = 1.0 μA
V(BR)GSS
30
V
Drain-Source “On” State Voltage
VGS = 0 V, ID = -15 mA
VGS = 0 V, ID = -7.0 mA
VGS = 0 V, ID = -3.0 mA
2N5114UB
2N5115UB
2N5116UB
VDS(on)
-1.3
-0.8
-0.6
V
Gate Reverse Current
VDS = 0, VGS = 20 V
IGSS
500
pA
Drain Current Cutoff
VGS = 12 V, VDS = -15 V
VGS = 7.0 V, VDS = -15 V
VGS = 5.0 V, VDS = -15 V
2N5114UB
2N5115UB
2N5116UB
ID(off)
-500
-500
-500
pA
Zero Gate Voltage Drain Current
VGS = 0, VDS = -18V
VGS = 0, VDS = -15V
VGS = 0, VDS = -15V
2N5114UB
2N5115UB
2N5116UB
IDSS
-30
-15
-5.0
-90
-60
-25
mA
Gate-Source Cutoff
VDS = -15, ID = -1.0 nA
VDS = -15, ID = -1.0 nA
VDS = -15, ID = -1.0 nA
2N5114UB
2N5115UB
2N5116UB
VGS(off)
5.0
3.0
1.0
10
6.0
4.0
V
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Small-Signal Drain-Source “On” State Resistance
VGS = 0, ID = -1.0 mA
2N5114UB
2N5115UB
2N5116UB
rds(on)1
75
100
175
Ω
Small-Signal Drain-Source “On” State Resistance
VGS = 0, ID = 0; f = 1 kHz
2N5114UB
2N5115UB
2N5116UB
rds(on)2
75
100
175
Ω
Small-Signal, Common-Source Short-Circuit
Reverse Transfer Capacitance
VGS = 12 V, VDS = 0
VGS = 7.0 V, VDS = 0
VGS = 5.0 V, VDS = 0
2N5114UB
2N5115UB
2N5116UB
Crss
7.0
pF
Small-Signal, Common-Source Short-Circuit Input Capacitance
VGS = 0, VDS = -15 V, f = 1.0 MHz 2N5114UB, 2N5115UB
2N5116UB
Ciss
25
27
pF
T4-LDS-0006-1, Rev. 1 (111983) ©2011 Microsemi Corporation Page 4 of 5
2N5114UB thru 2N5116UB
ELECTRICAL CHARACTERIST ICS @ TA = +2 5 oC unless otherwise noted. (continued)
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Turn-On Delay Time
2N5114UB
2N5115UB
2N5116UB Td(on) 6
10
25
η
s
Rise Time
2N5114UB
2N5115UB
2N5116UB tr 10
20
35
η
s
Turn-Off Delay Time
2N5114UB
2N5115UB
2N5116UB Td(off) 6
8
20
η
s
T4-LDS-0006-1, Rev. 1 (111983) ©2011 Microsemi Corporation Page 5 of 5
2N5114UB thru 2N5116UB
PACKAGE DIM ENSIONS
Symbol
Dimensions
Note Symbol
Dimensions
Note
inch
millimeters
inch
millimeters
Min
Max
Min
Max
Min
Max
Min
Max
BH
.046
.056
1.17
1.42
LS1
.036
.040
0.91
1.02
BL
.115 .128 2.92 3.25
LS2
.071 .079 1.81 2.01
BW
.085
.108
2.16
2.74
LW
0.16
0.24
0.41
0.61
CL
.128
3.25
r
.008
.203
CW
.108
2.74
r1
.012
.305
LL1
.022
.038
0.56
0.97
r2
.022
.559
LL2
.017
.035
0.43
0.89
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Hatched areas on package denote metallized areas ( tung sten wi th gold plat ing 60 micr o inches mini mu m over 80
micro inches minimum nickel).
4. Pad 1 = drain, Pad 2 = source, Pad 3 = gate, Pad 4 = shielding connected to the lid.
5. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.
