Single Phase Rectifier Bridges PSB 62 IdAVM = 52 A VRRM = 800-1800 V Preliminary Data Sheet VRSM V 800 1200 1400 1600 1800 VRRM V 800 1200 1400 1600 1800 Type PSB 62/08 PSB 62/12 PSB 62/14 PSB 62/16 PSB 62/18 Symbol Test Conditions IdAVM IFSM T C = 100C, module i2 dt T VJ T VJM T stg VISOL Md W eight Maximum Ratings 52 A T VJ = 45C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 550 600 A A T VJ = T VJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 500 550 A A T VJ = 45C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 1520 1520 A2 s A2 s T VJ = T VJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 1250 1250 A2 s A2 s -40 ... + 150 150 -40 ... + 150 C C C 2500 3000 V V 5 5 160 Nm Nm g 50/60 HZ, RMS IISOL 1 mA t = 1 min t=1s Mounting torque Terminal connection torque typ. (M5) (M5) Features * Package with screw terminals * Isolation voltage 3000 V * Planar glasspassivated chips * Blocking voltage up to 1800 V * Low forward voltage drop * UL registered, E 148688 Applications * Supplies for DC power equipment * Input rectifiers for PWM inverter * Battery DC power supplies * Field supply for DC motors Advantages * Easy to mount with two screws * Space and weight savings * Improved temperature and power cycling Package, style and outline Dimensions in mm (1mm = 0.0394") Symbol Test Conditions IR VR = VRRM VR = VRRM T VJ = 25C T VJ = T VJM Characteristic Value VF VTO rT RthJC IF = 150 A T VJ = 25C 0.3 5 mA mA 1.8 V 0.8 8 V m per Diode; DC current per module 1.45 0.36 K/W K/W RthJK per Diode; DC current per module 1.87 0.47 K/W K/W dS dA a Creeping distance on surface Creeping distance in air Max. allowable acceleration 10 9.4 50 mm mm m/s2 For power-loss calculations only T VJ = T VJM POWERSEM GmbH,Walpersdorfer Str. 53 91126 D- Schwabach, Germany Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20 POWERSEM reserves the right to change limits, test conditions and dimensions www.powersem.net PSB 62 200 I F(OV) -----I FSM 4 10 2 As IFSM (A) TVJ=45C TVJ=150C [A] 550 1.6 500 150 1.4 1.2 100 10 TVJ=45C 3 TVJ=150C 1 0 V RRM 50 0.8 Tvj = 150C 1/2 V RRM IF 0.6 Tvj = 25C 0 0.5 1 VF [V] 1.5 1 V RRM 10 0.4 2 0 1 10 Fig. 1 Forward current versus voltage drop per diode 10 2 3 t[ms] 10 1 2 10 Fig. 2 Surge overload current per diode IFSM: Crest value. t: duration 200 [W] PSB 62 175 2 4 t [ms] 6 10 Fig. 3 i2dt versus time (1-10ms) per diode (or thyristor) 75 TC 0.25 0.12 80 = RTHCA [K/W] 85 0.37 70 DC sin.180 rec.120 rec.60 rec.30 [A] 90 150 95 125 100 0.62 50 105 110 100 115 1.12 75 25 PVTOT 0 130 2.62 135 140 10 IdAV 145 0 C 150 IFAVM 20 40 [A] 0 Tamb 50 100 [K] 150 Fig. 4 Power dissipation versus direct output current and ambient temperature 2.5 K/W Z thJK 2 Z thJC 1.5 1 0.5 Zth 0.01 0.1 30 125 DC sin.180 rec.120 rec.60 rec.30 50 120 t[s] 1 10 Fig. 6 Transient thermal impedance per diode (or Thyristor), calculated 50 100 150 200 TC(C) Fig.5 Maximum forward current at case temperature