Symbol
V
DS
V
GS
I
DM
I
AR
E
AR
T
J
, T
STG
Symbol Typ Max
20 25
50 60
R
θJC
1.8 2.5
A
T
A
=70°C 10
Continuous Drain
Current
A
T
A
=25°C
I
DSM
12
A
Repetitive avalanche energy L=0.3mH
C
135 mJ
Maximum Junction-to-Case
D
Steady-State °C/W
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
A
t ≤ 10s R
θJA
°C/W
°C/W
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
V
V±20
Pulsed Drain Current
C
Power Dissipation
B
T
C
=25°C
Gate-Source Voltage
Drain-Source Voltage
Maximum Junction-to-Ambient
A
Steady-State
50
48
100
Avalanche Current
C
30
Power Dissipation
A
T
A
=25°C P
DSM
Continuous Drain
Current
B
Maximum UnitsParameter
T
C
=25°C
H
T
C
=100°C
40
W
Junction and Storage Temperature Range
A
P
D
°C
60
30
-55 to 175
T
C
=100°C
I
D
2.1 W
T
A
=70°C 1.3
AOL1454
N-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = 40V
I
D
= 50A (V
GS
= 10V)
R
DS(ON)
< 9mΩ (V
GS
= 10V)
R
DS(ON)
< 13mΩ (V
GS
= 4.5V)
ESD Protected
UIS Tested
Rg,Ciss,Coss,Crss Tested
General Description
The AOL1454 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge. It is ESD
protected. This device is suitable for use as a low side
switch in SMPS and general purpose applications.
-RoHS Compliant
-Halogen and Antimony Free Green Device*
Ultra SO-8
TM
Top View
Bottom tab
connected to
drain
S
G
D
G
D
S
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AOL1454
Symbol Min Typ Max Units
BV
DSS
40 V
1
T
J
=55°C 5
I
GSS
±100 uA
V
GS(th)
1 2 3 V
I
D(ON)
100 A
7.5 9.0
T
J
=125°C 10
10.3 13 mΩ
g
FS
47 S
V
SD
0.7 1 V
I
S
50 A
C
iss
1600 1920 pF
C
oss
320 pF
C
rss
100 pF
R
g
3.4 Ω
Q
g
(10V) 22 nC
Q
g
(4.5V) 10.5 nC
Q
gs
4.2 nC
Q
gd
4.8 nC
t
D(on)
6.5 ns
t
r
12.5 ns
t
D(off)
33 ns
t
f
16 ns
t
rr
31 ns
Q
rr
33 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=20A, dI/dt=100A/µs
Turn-On Rise Time
Turn-Off DelayTime
V
GS
=10V, V
DS
=20V, R
L
=1Ω,
R
GEN
=3Ω
Turn-Off Fall Time
Turn-On DelayTime
I
F
=20A, dI/dt=100A/µs
Total Gate Charge
V
GS
=10V, V
DS
=20V, I
D
=20A
On state drain current
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
DYNAMIC PARAMETERS
mΩ
V
GS
=10V, V
DS
=5V
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
I
DSS
uA
Gate Threshold Voltage
Drain-Source Breakdown Voltage I
D
=250uA, V
GS
=0V
Zero Gate Voltage Drain Current
Gate-Body leakage current
V
DS
=V
GS
I
D
=250µA
V
DS
=40V, V
GS
=0V
V
DS
=0V, V
GS
= ±20V
I
S
=1A,V
GS
=0V
V
DS
=5V, I
D
=20A
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
V
GS
=10V, I
D
=20A
V
GS
=4.5V, I
D
=20A
Gate Drain Charge
V
GS
=0V, V
DS
=20V, f=1MHz
SWITCHING PARAMETERS
Gate Source Charge
Gate resistance V
GS
=0V, V
DS
=0V, f=1MHz
Total Gate Charge
Reverse Transfer Capacitance
A: The value of R
θJA
is measured with the device in a still air environment with T
A
=25°C. The power dissipation P
DSM
and current rating I
DSM
are based on T
J(MAX)
=150°C, using steady state junction-to-ambient thermal resistance.
B. The power dissipation PD is based on T
J(MAX)
=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=175°C.
D. The R
θJA
is the sum of the thermal impedence from junction to case R
θJC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of T
J(MAX)
=175°C. The SOA curve provides a single pulse rating.
G. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C.
H. The maximum current rating is limited by bond-wires.
* This device is guaranteed green after date code 8P11 (June 1
ST
2008)
Rev1: June 2008
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AOL1454
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
I
D
=250uA, V
GS
=0V
V
DS
=40V, V
GS
=0V
±100 uA
500
150
60
0
20
40
60
80
100
2 2.5 3 3.5 4 4.5 5 5.5
V
GS
(Volts)
Figure 2: Transfer Characteristics
I
D
(A)
6
7
8
9
10
11
12
0 5 10 15 20 25 30
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
R
DS(ON)
(mΩ
Ω
Ω
Ω)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0 0.2 0.4 0.6 0.8 1.0 1.2
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
I
S
(A)
125°C
-40°C
0.6
0.8
1
1.2
1.4
1.6
-50 -25 0 25 50 75 100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
Normalized On-Resistance
V
GS
=4.5V
I
D
=5A
V
GS
=10V
I
D
=20A
5
10
15
20
25
30
2 4 6 8 10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
DS(ON)
(mΩ
Ω
Ω
Ω)
25°C
125°C
V
DS
=5V
V
GS
=4.5V
V
GS
=10V
I
D
=20A
125°C
0
20
40
60
80
100
0 1 2 3 4 5
V
DS
(Volts)
Figure 1: On-Region Characteristics
I
D
(A)
V
GS
=3V
4V
10V
5V
V
GS
=3.5V
-40°C
-40°C
25°C
125°C
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AOL1454
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
I
D
=250uA, V
GS
=0V
V
DS
=40V, V
GS
=0V
±100 uA
500
150
60
0
2
4
6
8
10
0 4 8 12 16 20 24
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
GS
(Volts)
0
400
800
1200
1600
2000
2400
0 5 10 15 20 25 30 35 40
V
DS
(Volts)
Figure 8: Capacitance Characteristics
Capacitance (pF)
C
iss
0
20
40
60
80
100
120
140
160
180
200
0.0001 0.001 0.01 0.1 1 10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Power (W)
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Z
θ
θ
θ
θJC
Normalized Transient
Thermal Resistance
C
oss
C
rss
V
DS
=20V
I
D
=20A
Single Pulse
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
R
θJC
=2.5°C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=175°C
Tc=25°C
0.0
0.1
1.0
10.0
100.0
1000.0
0.01 0.1 1 10 100
V
DS
(Volts)
I
D
(Amps)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10ms
1m
DC
R
DS(ON)
limited
T
J(Max)
=175°C
T
C
=25°C
10
µ
s
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AOL1454
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
I
D
=250uA, V
GS
=0V
V
DS
=40V, V
GS
=0V
±100 uA
500
150
60
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note G)
Z
θ
θ
θ
θJA
Normalized Transient
Thermal Resistance
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=60°C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0
20
40
60
80
100
120
0.000001 0.00001 0.0001 0.001
Time in avalanche, t
A
(s)
Figure 12: Single Pulse Avalanche capability
I
D
(A), Peak Avalanche Current
0
10
20
30
40
50
60
70
80
0 25 50 75 100 125 150 175
T
CASE
(°C)
Figure 13: Power De-rating (Note B)
Power Dissipation (W)
0
10
20
30
40
50
60
0 25 50 75 100 125 150 175
T
CASE
(°C)
Figure 14: Current De-rating (Note B)
Current rating I
D
(A)
T
A
=25°C
0
10
20
30
40
50
60
70
80
90
100
0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note G)
Power (W)
T
A
=25°C
T
A
=150°C
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AOL1454
I
D
=250uA, V
GS
=0V
V
DS
=40V, V
GS
=0V
±100 uA
500
150
60
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=60°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
A
=25°C
T
A
=25°C
T
A
=150°C
Vdd
Vgs
Id
Vgs
Rg
DUT
-
+
VDC
L
Vgs
Vds
Id
Vgs
BV
I
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Ig
Vgs
-
+
VDC
DUT
L
Vds
Vgs
Vds
Isd
Isd
Diode Recovery Test Circuit & Waveforms
Vds -
Vds +
IF
AR
DSS
2
E = 1/2 LI
dI/dt
IRM
rr
Vdd
Vdd
Q = - Idt
t
rr
AR
AR
-
+
VDC
Ig
Vds
DUT
-
+
VDC
Vgs
Vgs
10V
Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
VDC
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Vgs
Vds
10%
90%
Resistive Switching Test Circuit & Waveforms
t t
r
d(on)
t
on
t
d(off)
t
f
t
off
Alpha & Omega Semiconductor, Ltd. www.aosmd.com