MBRH200150 thru MBRH200200R Silicon Power Schottky Diode VRRM = 150 V - 200 V IF(AV) = 200 A Features * High Surge Capability * Types from 150 V to 200 V VRRM D-67 Package * Not ESD Sensitive Maximum ratings, at Tj = 25 C, unless otherwise specified ("R" devices have leads reversed) Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature MBRH200150(R) MBRH200200(R) Unit VRRM 150 200 V VRMS 106 141 V VDC Tj Tstg 150 -55 to 150 -55 to 150 150 -55 to 150 -55 to 150 V C C Conditions Symbol Electrical characteristics, at Tj = 25 C, unless otherwise specified Symbol Conditions MBRH200150(R) MBRH200200(R) Unit Average forward current (per pkg) IF(AV) TC = 125 C 200 200 A Peak forward surge current IFSM tp = 8.3 ms, half sine 3000 3000 A Maximum instantaneous forward voltage VF IFM = 200 A, Tj = 25 C 0.88 0.92 V Maximum instantaneous reverse current at rated DC blocking voltage IR Tj = 25 C Tj = 100 C Tj = 150 C 1 10 50 1 10 50 mA 0.35 0.35 C/W Parameter Thermal characteristics Thermal resistance, junctioncase RJC www.genesicsemi.com/silicon-products/schottky-rectifiers/ 1 MBRH200150 thru MBRH200200R www.genesicsemi.com/silicon-products/schottky-rectifiers/ 2 MBRH200150 thru MBRH200200R Package dimensions and terminal configuration Product is marked with part number and terminal configuration. www.genesicsemi.com/silicon-products/schottky-rectifiers/ 3 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: GeneSiC Semiconductor: MBRH200150 MBRH200200 MBRH200150R MBRH200200R MBRH200200(R)