V
RRM
= 150 V - 200 V
I
F(AV)
= 200 A
Features
• High Surge Capability D-67 Package
• Not ESD Sensitive
Parameter Symbol MBRH200150(R) Unit
Repetitive peak reverse
voltage V
RRM
150 V
RMS reverse voltage V
RMS
106 V
MBRH200150 thru MBRH200200R
200
141
MBRH200200(R)
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
Silicon Power
Schottk
y
Diode
Conditions
• Types from 150 V to 200 V V
RRM
DC blocking voltage V
DC
150 V
Operating temperature T
j
-55 to 150 °C
Storage temperature T
stg
-55 to 150 °C
Parameter Symbol MBRH200150(R) Unit
A
verage forward current (per
pkg) I
F(AV)
200 A
Maximum instantaneous
forward voltage 0.88
1
10
50
Thermal characteristics
Thermal resistance, junction-
case R
ΘJC
0.35 °C/W
50
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Maximum instantaneous
reverse current at rated DC
blocking voltage
I
R
V
F
1
T
j
= 25 °C
I
FM
= 200 A, T
j
= 25 °C
Conditions
-55 to 150
MBRH200200(R)
0.35
T
j
= 150 °C
0.92
3000
-55 to 150
150
T
C
= 125 °C 200
A
T
j
= 100 °C 10
Peak forward surge current I
FSM
t
p
= 8.3 ms, half sine 3000
mA
V
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1
MBRH200150 thru MBRH200200R
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2
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
MBRH200150 thru MBRH200200R
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