BC818
NPN General Purpose Transistor
FEATURES
•
For general AF applications
•
Low collector-emitter saturation voltage
MECHANICAL DATA
•
Case: SOT-23 Plastic
•
Case material: “Green” molding compound, UL
flammability classification 94V-0, (No Br. Sb. CI)
•
Lead Free in RoHS 2002/95/EC Compliant
Maximum Ratings
@ T
A
= 25℃
Characteristic Symbol
Value
Unit
Collector-Base Voltage V
CBO
30 V
Collector-Emitter Voltage V
CEO
25 V
Emitter-Base Voltage V
EBO
5 V
Collector Current -Continuous I
C
0.5 A
Collector Power Dissipation P
C
300 mW
Junction Temperature T
J
150 ℃
Storage Temperature Range T
STG
-55~+150 ℃
Electrical Characteristics
@
T
A
= 25℃ unless otherwise specified
Characteristic Test Condition Symbol
Min. Typ. Max.
Unit
Collector-base breakdown voltage I
C
=10µA,I
E
=0 V
CBO
30 V
Collector-emitter breakdown voltage
I
C
=10mA,I
B
=0 V
CEO
25 V
Emitter-base breakdown voltage I
E
=10µA,I
C
=0 V
EBO
5 V
Collector-base cut-off current V
CB
=25V,I
E
=0 I
CBO
0.1 uA
Emitter-base cut-off current V
EB
=4V,I
C
=0 I
EBO
0.1 uA
V
CE
=1V,I
C
=100mA h
FE1
100 630
DC current gain
V
CE
=1V,I
C
=300mA h
FE2
60
Collector-emitter saturation voltage I
C
=500mA,I
B
=50mA V
CE
(sat)
0.7 V
Base-emitter saturation voltage I
C
=500mA,I
B
=50mA V
BE
(sat)
1.2 V
Base-emitter voltage V
CE
=1V,I
C
=500mA V
BE
1.2 V
Collector output capacitance V
CB
=10V,f=1MHz C
ob
6 pF
Transition frequency V
CE
=10V,I
C
=10mA,
f=100MHz f
T
170 MHz
REV. 2, Jun-2012, KSNR02