HAL573...576,
HAL581, 584
Two-Wire Hall Effect
Sensor Family
Edition Nov. 27, 2003
6251-538-2DS
DATA SHEET
MICRONAS
MICRONAS
HAL57x, HAL58x DATA SHEET
2 Micronas
Contents
Page Section Title
3 1. Introduction
3 1.1. Features
3 1.2. Family Overview
4 1.3. Marking Code
4 1.3.1. Special Marking of Prototype Parts
4 1.4. Operating Junction Temperature Range
5 1.5. Hall Sensor Package Codes
5 1.6. Solderability
6 2. Functional Description
7 3. Specifications
7 3.1. Outline Dimensions
12 3.2. Dimensions of Sensitive Area
12 3.3. Positions of Sensitive Areas
12 3.4. Absolute Maximum Ratings
12 3.4.1. Storage and Shelf Life
13 3.5. Recommended Operating Conditions
14 3.6. Characteristics
15 3.7. Magnetic Characteristics Overview
18 4. Type Descriptions
18 4.1. HAL573
20 4.2. HAL574
22 4.3. HAL575
24 4.4. HAL576
26 4.5. HAL581
28 4.6. HAL584
30 5. Application Notes
30 5.1. Application Circuit
30 5.2. Extended Operating Conditions
30 5.3. Start-up Behavior
31 5.4. Ambient Temperature
31 5.5. EMC and ESD
32 6. Data Sheet History
HAL57x, HAL58x
DATA SHEET
3Micronas
Two-Wire Hall Effect Sensor Family
in CMOS technology
Release Notes: Revision bars indicate significant
changes to the previous edition.
1. Introduction
This sensor family consists of different two-wire Hall
switches produced in CMOS technology. All sensors
change the current consumption depending on the ex-
ternal magnetic field and require only two wires between
sensor and evaluation circuit. The sensors of this family
differ in the magnetic switching behavior and switching
points.
The sensors include a temperature-compensated Hall
plate with active offset compensation, a comparator, and
a current source. The comparator compares the actual
magnetic flux through the Hall plate (Hall voltage) with
the fixed reference values (switching points). According-
ly, the current source is switched on (high current con-
sumption) or off (low current consumption).
The active offset compensation leads to constant mag-
netic characteristics in the full supply voltage and tem-
perature range. In addition, the magnetic parameters
are robust against mechanical stress effects.
The sensors are designed for industrial and automotive
applications and operate with supply voltages from
3.75 V to 24 V in the junction temperature range from
–40 °C up to 140 °C. All sensors are available in the
SMD package SOT89B-1 and in the leaded versions
TO92UA-1 and TO92UA-2.
1.1. Features:
– current output for two-wire applications
– low current consumption: 5 mA ... 6.9 mA
– high current consumption: 12 mA ... 17 mA
– junction temperature range from –40 °C up to 140 °C.
– operates from 3.75 V to 24 V supply voltage
– operates with static magnetic fields and dynamic mag-
netic fields up to 10 kHz
– switching offset compensation at typically 145 kHz
– overvoltage and reverse-voltage protection
– magnetic characteristics are robust against mechani-
cal stress effects
– constant magnetic switching points over a wide supply
voltage range
– the decrease of magnetic flux density caused by rising
temperature in the sensor system is compensated by
a built-in negative temperature coefficient of the mag-
netic characteristics
– ideal sensor for applications in extreme automotive
and industrial environments
– EMC corresponding to DIN 40839
1.2. Family Overview
Type Switching
Behavior Sensitivity see
Page
573 unipolar low 18
574 unipolar medium 20
575 latching medium 22
576 unipolar medium 24
581 unipolar
inverted medium 26
584 unipolar
inverted medium 28
Unipolar Switching Sensors:
The sensor turns to high current consumption with the
magnetic south pole on the branded side of the package
and turns to low consumption if the magnetic field is re-
moved. The sensor does not respond to the magnetic
north pole on the branded side.
BHYS
Current consumption
0B
ON
BOFF
IDDlow
B
Fig. 1–1: Unipolar Switching Sensor
IDDhigh
HAL57x, HAL58x DATA SHEET
4 Micronas
Unipolar Inverted Switching Sensors:
The sensor turns to low current consumption with the
magnetic south pole on the branded side of the package
and turns to high consumption if the magnetic field is re-
moved. The sensor does not respond to the magnetic
north pole on the branded side.
BHYS
0B
OFF
BON B
Fig. 1–2: Unipolar Inverted Switching Sensor
IDDhigh
IDDlow
Current consumption
Latching Sensors:
The sensor turns to high current consumption with the
magnetic south pole on the branded side of the package
and turns to low consumption with the magnetic north
pole on the branded side. The current consumption does
not change if the magnetic field is removed. For chang-
ing the current consumption, the opposite magnetic field
polarity must be applied.
BHYS
Current consumption
0B
ON
BOFF
IDDlow
B
Fig. 1–3: Latching Sensor
IDDhigh
1.3. Marking Code
All Hall sensors have a marking on the package surface
(branded side). This marking includes the name of the
sensor and the temperature range.
Type Temperature Range
K E
HAL573 573K 573E
HAL574 574K 574E
HAL575 575K 575E
HAL576 576K 576E
HAL581 581K 581E
HAL584 584K 584E
1.3.1. Special Marking of Prototype Parts
Prototype parts are coded with an underscore beneath the
temperature range letter on each IC. They may be used
for lab experiments and design-ins but are not intended to
be used for qualification tests or as production parts.
1.4. Operating Junction Temperature Range
The Hall sensors from Micronas are specified to the chip
temperature (junction temperature TJ).
K: TJ = –40 °C to +140 °C
E: TJ = –40 °C to +100 °C
Note: Due to the high power dissipation at high current
consumption, there is a difference between the
ambient temperature (TA) and junction tempera-
ture. Please refer to section 5.4. on page 31 for
details.
HAL57x, HAL58x
DATA SHEET
5Micronas
1.5. Hall Sensor Package Codes
Type: 57x or 58x
HALXXXPA-T
Temperature Range: K or E
Package: SF for SOT89B-1
UA for TO92UA
→ Type: 581
→ Package: TO92UA
→ Temperature Range: TJ = –40 °C to +100 °C
Example: HAL581UA-E
Hall sensors are available in a wide variety of packaging
versions and quantities. For more detailed information,
please refer to the brochure: “Ordering Codes for Hall
Sensors”.
1.6. Solderability
all packages: according to IEC68-2-58
During soldering reflow processing and manual rework-
ing, a component body temperature of 260 °C should not
be exceeded.
Components stored in the original packaging should
provide a shelf life of at least 12 months, starting from the
date code printed on the labels, even in environments as
extreme as 40 °C and 90% relative humidity.
Fig. 1–4: Pin configuration
GND
2
1VDD
x
x = pin 3 for TO92UA-1/-2 package
x = pin 4 for SOT89B-1 package
HAL57x, HAL58x DATA SHEET
6 Micronas
2. Functional Description
The HAL57x, HAL58x two-wire sensors are monolithic
integrated circuits which switch in response to magnetic
fields. If a magnetic field with flux lines perpendicular to
the sensitive area is applied to the sensor, the biased
Hall plate forces a Hall voltage proportional to this field.
The Hall voltage is compared with the actual threshold
level in the comparator. The temperature-dependent
bias increases the supply voltage of the Hall plates and
adjusts the switching points to the decreasing induction
of magnets at higher temperatures.
If the magnetic field exceeds the threshold levels, the
current source switches to the corresponding state. In
the low current consumption state, the current source is
switched off and the current consumption is caused only
by the current through the Hall sensor. In the high current
consumption state, the current source is switched on
and the current consumption is caused by the current
through the Hall sensor and the current source. The
built-in hysteresis eliminates oscillation and provides
switching behavior of the output signal without bounc-
ing.
Magnetic offset caused by mechanical stress is com-
pensated for by using the “switching offset compensa-
tion technique”. An internal oscillator provides a two-
phase clock. In each phase, the current is forced through
the Hall plate in a different direction, and the Hall voltage
is measured. At the end of the two phases, the Hall volt-
ages are averaged and thereby the offset voltages are
eliminated. The average value is compared with the
fixed switching points. Subsequently, the current con-
sumption switches to the corresponding state. The
amount of time elapsed from crossing the magnetic
switching level to switching of the current level can vary
between zero and 1/fosc.
Shunt protection devices clamp voltage peaks at the
VDD-pin together with external series resistors. Reverse
current is limited at the VDD-pin by an internal series re-
sistor up to –15 V. No external protection diode is need-
ed for reverse voltages ranging from 0 V to –15 V.
Fig. 2–1: HAL57x, HAL58x block diagram
Temperature
Dependent
Bias
Switch
Hysteresis
Control
Comparator Current
Source
VDD
1
Clock
Hall Plate
GND
2, x
HAL57x, HAL58x
Reverse
Voltage &
Overvoltage
Protection
x = pin 3 for TO92UA-1/-2 package
x = pin 4 for SOT89B-1 package
t
IDDlow
IDD
1/fosc = 6.9 µs
IDDhigh
B
BOFF
fosc
t
t
t
IDD
t
BON
Fig. 2–2: Timing diagram (example: HAL581)
HAL57x, HAL58x
DATA SHEET
7Micronas
3. Specifications
3.1. Outline Dimensions
Fig. 3–1:
SOT89B-1: Plastic Small Outline Transistor package, 4 leads
Weight approximately 0.039 g
HAL57x, HAL58x DATA SHEET
8 Micronas
Fig. 3–2:
TO92UA-1: Plastic Transistor Standard UA package, 3 leads, spread
Weight approximately 0.105 g
HAL57x, HAL58x
DATA SHEET
9Micronas
Fig. 3–3:
TO92UA-2: Plastic Transistor Standard UA package, 3 leads
Weight approximately 0.105 g
HAL57x, HAL58x DATA SHEET
10 Micronas
Fig. 3–4:
TO92UA-2: Dimensions ammopack inline, not spread
HAL57x, HAL58x
DATA SHEET
11Micronas
Fig. 3–5:
TO92UA-1: Dimensions ammopack inline, spread
HAL57x, HAL58x DATA SHEET
12 Micronas
3.2. Dimensions of Sensitive Area
0.25 mm x 0.12 mm
3.3. Positions of Sensitive Areas
SOT89B-1 TO92UA-1/-2
xcenter of
the package center of
the package
y0.85 mm nominal 0.9 mm nominal
3.4. Absolute Maximum Ratings
Stresses beyond those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. This
is a stress rating only. Functional operation of the device at these conditions is not implied. Exposure to absolute maxi-
mum rating conditions for extended periods will affect device reliability.
This device contains circuitry to protect the inputs and outputs against damage due to high static voltages or electric
fields; however, it is advised that normal precautions be taken to avoid application of any voltage higher than absolute
maximum-rated voltages to this circuit.
All voltages listed are referenced to ground.
Symbol Parameter Pin No. Limit Values Unit
Min. Max.
VDD Supply Voltage 1 –151) 2) 282) V
TJJunction Temperature Range –40 170 °C
1) –18 V with a 100 Ω series resistor at pin 1 (–16 V with a 30 Ω series resistor)
2) as long as TJmax is not exceeded
3.4.1. Storage and Shelf Life
The permissible storage time (shelf life) of the sensors is unlimited, provided the sensors are stored at a maximum of
30 ° C and a maximum of 85% relative humidity. At these conditions, no Dry Pack is required.
Solderability is guaranteed for one year from the date code on the package. Solderability has been tested after storing
the devices for 16 hours at 155 °C. The wettability was more than 95%.
HAL57x, HAL58x
DATA SHEET
13Micronas
3.5. Recommended Operating Conditions
Functional operation of the device beyond those indicated in the “Recommended Operating Conditions” of this specifi-
cation is not implied, may result in unpredictable behavior of the device and may reduce reliability and lifetime.
All voltages listed are referenced to ground.
Symbol Parameter Pin No. Limit Values Unit
Min. Typ. Max.
VDD Supply Voltage 1 3.75 – 24 V
TAAmbient Temperature for
Continuous Operation
–40 – 851) °C
ton Supply Time for Pulsed Mode – 30 – µs
1) when using the “K” type and VDD ≤ 16 V
Note: Due to the high power dissipation at high current consumption, there is a difference between the ambient temper-
ature (TA) and junction temperature. The power dissipation can be reduced by repeatedly switching the supply voltage
on and off (pulse mode). Please refer to section 5.4. on page 31 for details.
HAL57x, HAL58x DATA SHEET
14 Micronas
3.6. Characteristics at TJ = –40 °C to +140 °C , VDD = 3.75 V to 24 V,
at Recommended Operation Conditions if not otherwise specified in the column “Conditions”.
Typical Characteristics for TJ = 25 °C and VDD = 12 V
Symbol Parameter Pin No. Limit Values Unit Conditions
Min. Typ. Max.
IDDlow Low Current Consumption
over Temperature Range 1 5 6 6.9 mA
IDDhigh High Current Consumption
over Temperature Range 1 12 14.3 17 mA
VDDZ Overvoltage Protection
at Supply 1 – 28.5 32 V IDD = 25 mA, TJ = 25 °C,
t = 20 ms
fosc Internal Oscillator Chopper Fre-
quency over Temperature Range – – 145 – kHz
ten(O) Enable Time of Output after
Setting of VDD
1 – 30 – µs1)
trOutput Rise Time 1 – 0.4 1.6 µs VDD = 12 V, Rs = 30 Ω
tfOutput Fall Time 1 – 0.4 1.6 µs VDD = 12 V, Rs = 30 Ω
RthJSB
case
SOT89B-1
Thermal Resistance Junction
to Substrate Backside – – 150 200 K/W Fiberglass Substrate
30 mm x 10 mm x 1.5mm,
pad size see Fig. 3–6
RthJA
case
TO92UA-1,
TO92UA-2
Thermal Resistance Junction
to Soldering Point – – 150 200 K/W
1) B > BON + 2 mT or B < BOFF – 2 mT for HAL57x, B > BOFF + 2 mT or B < BON – 2 mT for HAL 58x
Fig. 3–6: Recommended pad size SOT89B-1
Dimensions in mm
5.0
2.0
2.0
1.0
HAL57x, HAL58x
DATA SHEET
15Micronas
3.7. Magnetic Characteristics Overview at TJ = –40 °C to +140 °C, VDD = 3.75 V to 24 V,
Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
Sensor Parameter On point BON Off point BOFF Hysteresis BHYS Unit
Switching Type TJMin. Typ. Max. Min. Typ. Max. Min. Typ. Max.
HAL 573 –40 °C 40.2 45.7 51.2 37.8 43.5 49.2 0.5 2.2 5 mT
unipolar 25 °C 38 43.5 49 36 41.5 47 0.5 2 5 mT
100 °C 34 40 46 32 38 44 0.5 2 5 mT
140 °C 34 38 46 32 36 44 0.2 2 5 mT
HAL 574 –40 °C 5.5 9.2 12 5 7.2 11.5 0.5 2 3 mT
unipolar 25 °C 5.5 9.2 12 5 7.2 11.5 0.5 2 3 mT
100 °C 5.5 9.2 12 5 7.2 11.5 0.5 2 3 mT
140 °C 5 8.8 12.5 3.5 7.5 11.5 0.2 1.9 3.5 mT
HAL 575 –40 °C 0.5 4 8 –8 –4 –0.5 5 8 11 mT
latching 25 °C 0.5 4 8 –8 –4 –0.5 5 8 11 mT
100 °C 0.5 4 8 –8 –4 –0.5 5 8 11 mT
140 °C 0.5 4 8 –8 –4 –0.5 5 8 11 mT
HAL 576 –40 °C 3.3 5.7 8.2 1.8 4.2 6.7 0.3 1.9 3.5 mT
unipolar 25 °C 3.3 5.7 8.2 1.8 4.2 6.7 0.3 1.9 3.5 mT
100 °C 2.8 5.5 8.3 1.3 4 6.8 0.3 1.9 3.5 mT
140 °C 2 5.2 8.3 0.3 3.7 7 0.3 1.9 3.5 mT
HAL 581 –40 °C 6.5 10 13.8 8 12 15.5 0.5 2 3.5 mT
unipolar 25 °C 6.5 10 13.8 8 12 15.5 0.5 2 3.5 mT
inverted 100 °C 6.5 10 13.8 8 12 15.5 0.5 2 3.5 mT
140 °C 6.5 10.4 14.3 8 12 16 0.5 2 3.5 mT
HAL 584 –40 °C 5 7.2 11.5 5.5 9.2 12 0.5 2 3.0 mT
unipolar 25 °C 5 7.2 11.5 5.5 9.2 12 0.5 2 3.0 mT
inverted 100 °C 5 7.2 11.5 5.5 9.2 12 0.5 2 3.0 mT
140 °C 4.5 8 11.5 5.5 9 12.5 0.2 1.9 3.5 mT
Note: For detailed descriptions of the individual types, see pages 18 and following.
HAL57x, HAL58x DATA SHEET
16 Micronas
–20
–15
–10
–5
0
5
10
15
20
–15 –10 –5 0 5 10 15 20 25 30 V
mA
VDD
IDD
TA = –40 °C
TA = 25 °C
TA = 100 °C
25 HAL57x, HAL58x
Fig. 3–7: Typical current consumption
versus supply voltage
IDDlow
IDDhigh
0
2
4
6
8
10
12
14
16
18
20
0123456
V
mA
VDD
IDD
HAL57x, HAL58x
Fig. 3–8: Typical current consumption
versus supply voltage
IDDlow
IDDhigh
TA = –40 °C
TA = 25 °C
TA = 100 °C
0
2
4
6
8
10
12
14
16
18
20
–50 0 50 100 150 200°C
mA
TA
IDD
Fig. 3–9: Typical current consumption
versus ambient temperature
HAL57x, HAL58x
IDDhigh
IDDlow
VDD = 3.75 V
VDD = 12 V
VDD = 24 V
0
20
40
60
80
100
120
140
160
180
200
–50 0 50 100 150 200°C
kHz
TA
fosc
Fig. 3–10: Typ. internal chopper frequency
versus ambient temperature
HAL57x, HAL58x
VDD = 3.75 V
VDD = 12 V
VDD = 24 V
HAL57x, HAL58x
DATA SHEET
17Micronas
0
20
40
60
80
100
120
140
160
180
200
0 5 10 15 20 25 30 V
kHz
VDD
fosc
Fig. 3–11: Typ. internal chopper frequency
versus supply voltage
HAL57x, HAL58x
TA = –40 °C
TA = 25 °C
TA = 100 °C
0
20
40
60
80
100
120
140
160
180
200
345678
V
kHz
VDD
fosc
Fig. 3–12: Typ. internal chopper frequency
versus supply voltage
HAL57x, HAL58x
TA = –40 °C
TA = 25 °C
TA = 100 °C
HAL573 DATA SHEET
18 Micronas
4. Type Descriptions
4.1. HAL573
The HAL573 is a unipolar switching sensor with low sen-
sitivity (see Fig. 4–5).
The sensor turns to high current consumption with the
magnetic south pole on the branded side of the package
and turns to low current consumption if the magnetic
field is removed. It does not respond to the magnetic
north pole on the branded side.
For correct functioning in the application, the sensor re-
quires only the magnetic south pole on the branded side
of the package.
Magnetic Features:
– switching type: unipolar
– low sensitivity
– typical BON: 43.5 mT at room temperature
– typical BOFF: 41.5 mT at room temperature
– typical temperature coefficient of magnetic switching
points is –1100 ppm/K
– operates with static magnetic fields and dynamic mag-
netic fields up to 10 kHz
Applications
The HAL573 is designed for applications with one mag-
netic polarity and weak magnetic amplitudes at the sen-
sor position such as:
– solid state switches,
– contactless solutions to replace micro switches,
– position and end point detection, and
– rotating speed measurement.
BHYS
Current consumption
0B
ON
BOFF
IDDlow
B
Fig. 4–1: Definition of magnetic switching points for
the HAL573
IDDhigh
Magnetic Characteristics at TJ = –40 °C to +140 °C, VDD = 3.75 V to 24 V,
Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
Parameter On point BON Off point BOFF Hysteresis BHYS Magnetic Offset Unit
TJMin. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
–40 °C 40.2 45.7 51.2 37.8 43.5 49.2 0.5 2.2 5 44.6 mT
25 °C 38 43.5 49 36 41.5 47 0.5 2 5 42.5 mT
100 °C 34 40 46 32 38 44 0.5 2 5 39 mT
140 °C 34 38 46 32 36 44 0.2 2 5 39 mT
The hysteresis is the difference between the switching points BHYS = BON – BOFF
The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2
HAL573
DATA SHEET
19Micronas
25
30
35
40
45
50
0 5 10 15 20 25 30 V
mT
VDD
BON
BOFF
HAL573
BON
BOFF
Fig. 4–2: Typ. magnetic switching points
versus supply voltage
TA = –40 °C
TA = 25 °C
TA = 100 °C
TA = 125 °C
BON
BON
BON
BOFF
BOFF
BOFF
25
30
35
40
45
50
3 3.5 4.0 4.5 5.0 5.5 6.0 V
mT
VDD
BON
BOFF
HAL573
Fig. 4–3: Typ. magnetic switching points
versus supply voltage
TA = –40 °C
TA = 25 °C
TA = 100 °C
TA = 125 °C
25
30
35
40
45
50
55
60
–50 0 50 100 150 200°C
mT
TA, TJ
BON
BOFF
BONmax
BONtyp
BONmin
BOFFmax
BOFFtyp
BOFFmin
HAL573
Fig. 4–4: Magnetic switching points
versus temperature
VDD = 3.75 V
VDD = 12–24 V
Note: In the diagram “Magnetic switching points versus
temperature” the curves for BONmin, BONmax,
BOFFmin, and BOFFmax refer to junction temperature,
whereas typical curves refer to ambient temperature.
HAL574 DATA SHEET
20 Micronas
4.2. HAL574
The HAL574 is a medium sensitive unipolar switching
sensor (see Fig. 4–5).
The sensor turns to high current consumption with the
magnetic south pole on the branded side of the package
and turns to low current consumption if the magnetic
field is removed. It does not respond to the magnetic
north pole on the branded side.
For correct functioning in the application, the sensor re-
quires only the magnetic south pole on the branded side
of the package.
In this two-wire sensor family, the HAL584 is a sensor
with the same magnetic characteristics but with an in-
verted output characteristic.
Magnetic Features:
– switching type: unipolar
– medium sensitivity
– typical BON: 9.2 mT at room temperature
– typical BOFF: 7.2 mT at room temperature
– typical temperature coefficient of magnetic switching
points is 0 ppm/K
– operates with static magnetic fields and dynamic mag-
netic fields up to 10 kHz
Applications
The HAL574 is designed for applications with one mag-
netic polarity and weak magnetic amplitudes at the sen-
sor position such as:
– applications with large airgap or weak magnets,
– solid state switches,
– contactless solutions to replace micro switches,
– position and end point detection, and
– rotating speed measurement.
BHYS
Current consumption
0B
ON
BOFF
IDDlow
B
Fig. 4–5: Definition of magnetic switching points for
the HAL574
IDDhigh
Magnetic Characteristics at TJ = –40 °C to +140 °C, VDD = 3.75 V to 24 V,
Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
Parameter On point BON Off point BOFF Hysteresis BHYS Magnetic Offset Unit
TJMin. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
–40 °C 5.5 9.2 12 5 7.2 11.5 0.5 2 3 8.2 mT
25 °C 5.5 9.2 12 5 7.2 11.5 0.5 2 3 8.2 mT
100 °C 5.5 9.2 12 5 7.2 11.5 0.5 2 3 8.2 mT
140 °C 5 8.8 12.5 3.5 7.5 11.5 0.2 1.9 3.5 8.2 mT
The hysteresis is the difference between the switching points BHYS = BON – BOFF
The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2
HAL574
DATA SHEET
21Micronas
0
2
4
6
8
10
12
0 5 10 15 20 25 30 V
mT
VDD
BON
BOFF
HAL574
BON
BOFF
Fig. 4–6: Typ. magnetic switching points
versus supply voltage
TA = –40 °C
TA = 25 °C
TA = 100 °C
TA = 125 °C
0
2
4
6
8
10
12
3 3.5 4.0 4.5 5.0 5.5 6.0 V
mT
VDD
BON
BOFF
HAL574
BON
BOFF
Fig. 4–7: Typ. magnetic switching points
versus supply voltage
TA = –40 °C
TA = 25 °C
TA = 100 °C
TA = 125 °C
0
2
4
6
8
10
12
14
–50 0 50 100 150 200°C
mT
TA, TJ
BON
BOFF
BONmax
BONtyp
BONmin
BOFFmax
BOFFtyp
BOFFmin
HAL574
Fig. 4–8: Magnetic switching points
versus temperature
VDD = 3.75 V
VDD = 12–24 V
Note: In the diagram “Magnetic switching points versus
temperature” the curves for BONmin, BONmax,
BOFFmin, and BOFFmax refer to junction temperature,
whereas typical curves refer to ambient temperature.
HAL575 DATA SHEET
22 Micronas
4.3. HAL575
The HAL575 is a medium sensitive latching switching
sensor (see Fig. 4–9).
The sensor turns to high current consumption with the
magnetic south pole on the branded side of the package
and turns to low consumption with the magnetic north
pole on the branded side. The current consumption does
not change if the magnetic field is removed. For chang-
ing the current consumption, the opposite magnetic field
polarity must be applied.
For correct functioning in the application, the sensor re-
quires both magnetic polarities on the branded side of
the package.
Magnetic Features:
– switching type: latching
– medium sensitivity
– typical BON: 4 mT at room temperature
– typical BOFF: –4 mT at room temperature
– typical temperature coefficient of magnetic switching
points is 0 ppm/K
– operates with static magnetic fields and dynamic mag-
netic fields up to 10 kHz
Applications
The HAL575 is designed for applications with both mag-
netic polarities and weak magnetic amplitudes at the
sensor position such as:
– applications with large airgap or weak magnets,
– multipole magnet applications,
– contactless solutions to replace micro switches,
– rotating speed measurement.
BHYS
Current consumption
0B
ON
BOFF
IDDlow
B
Fig. 4–9: Definition of magnetic switching points for
the HAL575
IDDhigh
Magnetic Characteristics at TJ = –40 °C to +140 °C, VDD = 3.75 V to 24 V,
Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
Parameter On point BON Off point BOFF Hysteresis BHYS Magnetic Offset Unit
TJMin. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
–40 °C 0.5 4 8 –8 –4 –0.5 5 8 11 0 mT
25 °C 0.5 4 8 –8 –4 –0.5 5 8 11 0 mT
100 °C 0.5 4 8 –8 –4 –0.5 5 8 11 0 mT
140 °C 0.5 4 8 –8 –4 –0.5 5 8 11 0 mT
The hysteresis is the difference between the switching points BHYS = BON – BOFF
The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2
HAL575
DATA SHEET
23Micronas
–6
–4
–2
0
2
4
6
0 5 10 15 20 25 30 V
mT
VDD
BON
BOFF
HAL575
BON
BOFF
Fig. 4–10: Typ. magnetic switching points
versus supply voltage
TA = –40 °C
TA = 25 °C
TA = 100 °C
TA = 125 °C
–6
–4
–2
0
2
4
6
3 3.5 4.0 4.5 5.0 5.5 6.0 V
mT
VDD
BON
BOFF
HAL575
BON
BOFF
Fig. 4–11: Typ. magnetic switching points
versus supply voltage
TA = –40 °C
TA = 25 °C
TA = 100 °C
TA = 125 °C
–9
–7
–5
–3
–1
1
3
5
7
9
–50 0 50 100 150 200°C
mT
TA, TJ
BON
BOFF
BONmax
BONtyp
BONmin
BOFFmax
BOFFtyp
BOFFmin
HAL575
Fig. 4–12: Magnetic switching points
versus temperature
VDD = 3.75–12 V
VDD = 24 V
Note: In the diagram “Magnetic switching points versus
temperature” the curves for BONmin, BONmax,
BOFFmin, and BOFFmax refer to junction temperature,
whereas typical curves refer to ambient temperature.
HAL576 DATA SHEET
24 Micronas
4.4. HAL576
The HAL576 is a medium sensitive unipolar switching
sensor (see Fig. 4–13).
The sensor turns to high current consumption with the
magnetic south pole on the branded side of the package
and turns to low current consumption if the magnetic
field is removed. It does not respond to the magnetic
north pole on the branded side.
For correct functioning in the application, the sensor re-
quires only the magnetic south pole on the branded side
of the package.
Magnetic Features:
– switching type: unipolar
– medium sensitivity
– typical BON: 5.7 mT at room temperature
– typical BOFF: 4.2 mT at room temperature
– operates with static magnetic fields and dynamic mag-
netic fields up to 10 kHz
Applications
The HAL576 is designed for applications with one mag-
netic polarity and weak magnetic amplitudes at the sen-
sor position such as:
– applications with large airgap or weak magnets,
– solid state switches,
– contactless solutions to replace micro switches,
– position and end point detection, and
– rotating speed measurement.
BHYS
Current consumption
0B
ON
BOFF
IDDlow
B
Fig. 4–13: Definition of magnetic switching points for
the HAL576
IDDhigh
Magnetic Characteristics at TJ = –40 °C to +140 °C, VDD = 3.75 V to 24 V,
Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
Parameter On point BON Off point BOFF Hysteresis BHYS Magnetic Offset Unit
TJMin. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
–40 °C 3.3 5.7 8.2 1.8 4.2 6.7 0.3 1.9 3.5 5 mT
25 °C 3.3 5.7 8.2 1.8 4.2 6.7 0.3 1.9 3.5 5 mT
100 °C 2.8 5.5 8.3 1.3 4 6.8 0.3 1.9 3.5 5 mT
140 °C 2 5.2 8.3 0.3 3.7 7 0.3 1.9 3.5 4.5 mT
The hysteresis is the difference between the switching points BHYS = BON – BOFF
The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2
HAL576
DATA SHEET
25Micronas
0
1
2
3
4
5
6
7
8
0 5 10 15 20 25 30 V
mT
VDD
BON
BOFF
HAL576
BON
BOFF
Fig. 4–14: Typ. magnetic switching points
versus supply voltage
TA = –40 °C
TA = 25 °C
TA = 100 °C
0
1
2
3
4
5
6
7
8
3 3.5 4.0 4.5 5.0 5.5 6.0 V
mT
VDD
BON
BOFF
HAL576
BON
BOFF
Fig. 4–15: Typ. magnetic switching points
versus supply voltage
TA = –40 °C
TA = 25 °C
TA = 100 °C
0
1
2
3
4
5
6
7
8
9
–50 0 50 100 150 200°C
mT
TA, TJ
BON
BOFF
BONmax
BONtyp
BONmin
BOFFmax
BOFFtyp
BOFFmin
HAL576
Fig. 4–16: Magnetic switching points
versus temperature
VDD = 3.75 V
VDD = 12 V
VDD = 24 V
Note: In the diagram “Magnetic switching points versus
temperature” the curves for BONmin, BONmax,
BOFFmin, and BOFFmax refer to junction temperature,
whereas typical curves refer to ambient temperature.
HAL581 DATA SHEET
26 Micronas
4.5. HAL581
The HAL581 is a medium sensitive unipolar switching
sensor with an inverted output (see Fig. 4–17).
The sensor turns to low current consumption with the
magnetic south pole on the branded side of the package
and turns to high current consumption if the magnetic
field is removed. It does not respond to the magnetic
north pole on the branded side.
For correct functioning in the application, the sensor re-
quires only the magnetic south pole on the branded side
of the package.
Magnetic Features:
– switching type: unipolar inverted
– medium sensitivity
– typical BON: 10 mT at room temperature
– typical BOFF: 12 mT at room temperature
– typical temperature coefficient of magnetic switching
points is 0 ppm/K
– operates with static magnetic fields and dynamic mag-
netic fields up to 10 kHz
Applications
The HAL581 is designed for applications with one mag-
netic polarity and weak magnetic amplitudes at the sen-
sor position where an inverted output signal is required
such as:
– applications with large airgap or weak magnets,
– solid state switches,
– contactless solutions to replace micro switches,
– position and end point detection, and
– rotating speed measurement.
BHYS
0B
OFF
BON B
Fig. 4–17: Definition of magnetic switching points for
the HAL581
IDDhigh
IDDlow
Current consumption
Magnetic Characteristics at TJ = –40 °C to +140 °C, VDD = 3.75 V to 24 V,
Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
Parameter On point BON Off point BOFF Hysteresis BHYS Magnetic Offset Unit
TJMin. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
–40 °C 6.5 10 13.8 8 12 15.5 0.5 2 3.5 11 mT
25 °C 6.5 10 13.8 8 12 15.5 0.5 2 3.5 11 mT
100 °C 6.5 10 13.8 8 12 15.5 0.5 2 3.5 11 mT
140 °C 6.5 10.4 14.3 8 12 16 0.5 2 3.5 11 mT
The hysteresis is the difference between the switching points BHYS = BOFF – BON
The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2
HAL581
DATA SHEET
27Micronas
6
7
8
9
10
11
12
13
14
0 5 10 15 20 25 30 V
mT
VDD
BON
BOFF
HAL581
BOFF
Fig. 4–18: Typ. magnetic switching points
versus supply voltage
BON
TA = –40 °C
TA = 25 °C
TA = 100 °C
TA = 125 °C
6
7
8
9
10
11
12
13
14
3 3.5 4.0 4.5 5.0 5.5 6.0 V
mT
VDD
BON
BOFF
HAL581
BOFF
Fig. 4–19: Typ. magnetic switching points
versus supply voltage
BON
TA = –40 °C
TA = 25 °C
TA = 100 °C
TA = 125 °C
0
2
4
6
8
10
12
14
16
–50 0 50 100 150°C
mT
TA, TJ
BON
BOFF
BONmax
BONtyp
BONmin
BOFFmax
BOFFtyp
BOFFmin
HAL581
Fig. 4–20: Magnetic switching points
versus temperature
VDD = 3.75 V
VDD = 12–24 V
Note: In the diagram “Magnetic switching points versus
temperature” the curves for BONmin, BONmax,
BOFFmin, and BOFFmax refer to junction temperature,
whereas typical curves refer to ambient temperature.
HAL584 DATA SHEET
28 Micronas
4.6. HAL584
The HAL584 is a medium sensitive unipolar switching
sensor with an inverted output (see Fig. 4–21).
The sensor turns to low current consumption with the
magnetic south pole on the branded side of the package
and turns to high current consumption if the magnetic
field is removed. It does not respond to the magnetic
north pole on the branded side.
For correct functioning in the application, the sensor re-
quires only the magnetic south pole on the branded side
of the package.
In this two-wire sensor family, the HAL574 is a sensor
with the same magnetic characteristics but with a normal
output characteristic.
Magnetic Features:
– switching type: unipolar inverted
– medium sensitivity
– typical BON: 7.2 mT at room temperature
– typical BOFF: 9.2 mT at room temperature
– typical temperature coefficient of magnetic switching
points is 0 ppm/K
– operates with static magnetic fields and dynamic mag-
netic fields up to 10 kHz
Applications
The HAL584 is designed for applications with one mag-
netic polarity and weak magnetic amplitudes at the sen-
sor position where an inverted output signal is required
such as:
– applications with large airgap or weak magnets,
– solid state switches,
– contactless solutions to replace micro switches,
– position and end point detection, and
– rotating speed measurement.
BHYS
0B
OFF
BON B
Fig. 4–21: Definition of magnetic switching points for
the HAL584
IDDhigh
IDDlow
Current consumption
Magnetic Characteristics at TJ = –40 °C to +140 °C, VDD = 3.75 V to 24 V,
Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
Parameter On point BON Off point BOFF Hysteresis BHYS Magnetic Offset Unit
TJMin. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
–40 °C 5 7.2 11.5 5.5 9.2 12 0.5 2 3.0 8.2 mT
25 °C 5 7.2 11.5 5.5 9.2 12 0.5 2 3.0 8.2 mT
100 °C 5 7.2 11.5 5.5 9.2 12 0.5 2 3.0 8.2 mT
140 °C 4.5 8 11.5 5.5 9 12.5 0.2 1.9 3.5 8.2 mT
The hysteresis is the difference between the switching points BHYS = BOFF – BON
The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2
HAL584
DATA SHEET
29Micronas
0
2
4
6
8
10
12
0 5 10 15 20 25 30 V
mT
VDD
BON
BOFF
HAL584
BOFF
Fig. 4–22: Typ. magnetic switching points
versus supply voltage
BON
TA = –40 °C
TA = 25 °C
TA = 100 °C
TA = 125 °C
0
2
4
6
8
10
12
3 3.5 4.0 4.5 5.0 5.5 6.0 V
mT
VDD
BON
BOFF
HAL584
BOFF
Fig. 4–23: Typ. magnetic switching points
versus supply voltage
BON
TA = –40 °C
TA = 25 °C
TA = 100 °C
TA = 125 °C
0
2
4
6
8
10
12
14
–50 0 50 100 150°C
mT
TA, TJ
BON
BOFF BONmax
BONtyp
BONmin
BOFFmax
BOFFtyp
BOFFmin
HAL584
Fig. 4–24: Magnetic switching points
versus temperature
VDD = 3.75 –12 V
VDD = 24 V
Note: In the diagram “Magnetic switching points versus
temperature” the curves for BONmin, BONmax,
BOFFmin, and BOFFmax refer to junction temperature,
whereas typical curves refer to ambient temperature.
HAL57x, HAL 58x DATA SHEET
30 Micronas
5. Application Notes
WARNING:
DO NOT USE THESE SENSORS IN LIFE-
SUPPORTING SYSTEMS, AVIATION, AND
AEROSPACE APPLICATIONS!
5.1. Application Circuit
Figure 5–1 shows a simple application with a two-wire
sensor. The current consumption can be detected by
measuring the voltage over RL. For correct functioning
of the sensor, the voltage between pin 1 and 2 (VDD)
must be a minimum of 3.75 V. With the maximum current
consumption of 17 mA, the maximum RL can be calcu-
lated as:
RLmax +VSUPmin *3.75 V
17 mA
VSUP
RL
1V
DD
GND
2 or x
VSIG
Fig. 5–1: Application Circuit 1
x = pin 3 for TO92UA-1/-2 package
x = pin 4 for SOT89B-1 package
For applications with disturbances on the supply line or
radiated disturbances, a series resistor RV (ranging from
10 Ω to 30 Ω) and a capacitor both placed close to the
sensor are recommended (see figure 5–2). In this case,
the maximum RL can be calculated as:
RLmax +VSUPmin *3.75 V
17 mA *RV
1V
DD
GND
2 or x
Fig. 5–2: Application Circuit 2
4.7 nF
RV
VSUP
RL
VSIG
x = pin 3 for TO92UA-1/-2 package
x = pin 4 for SOT89B-1 package
5.2. Extended Operating Conditions
All sensors fulfill the electrical and magnetic characteris-
tics when operated within the Recommended Operating
Conditions (see page 13).
Typically, the sensors operate with supply voltages
above 3 V. However, below 3.75 V, the current consump-
tion and the magnetic characteristics may be outside the
specification.
Note: The functionality of the sensor below 3.75 V is not
tested on a regular base. For special test condi-
tions, please contact Micronas.
5.3. Start-up Behavior
Due to the active offset compensation, the sensors have
an initialization time (enable time ten(O)) after applying
the supply voltage. The parameter ten(O) is specified in
the Electrical Characteristics (see page 14). During the
initialization time, the current consumption is not defined
and can toggle between low and high.
HAL57x:
After ten(O), the current consumption will be high if the
applied magnetic field B is above BON. The current con-
sumption will be low if B is below BOFF.
HAL58x
In case of sensors with an inverted switching behavior,
the current consumption will be low if B > BOFF and high
if B < BON.
Note: For magnetic fields between BOFF and BON, the
current consumption of the HAL sensor will be ei-
ther low or high after applying VDD. In order to
achieve a defined current consumption, the ap-
plied magnetic field must be above BON, respec-
tively, below BOFF.
HAL57x, HAL58x
DATA SHEET
31Micronas
5.4. Ambient Temperature
Due to internal power dissipation, the temperature on
the silicon chip (junction temperature TJ) is higher than
the temperature outside the package (ambient tempera-
ture TA).
TJ = TA + ∆T
At static conditions and continuous operation, the follow-
ing equation applies:
∆T = IDD * VDD * Rth
For all sensors, the junction temperature range TJ is
specified. The maximum ambient temperature TAmax
can be calculated as:
TAmax = TJmax – ∆T
For typical values, use the typical parameters. For worst
case calculation, use the max. parameters for IDD and
Rth, and the max. value for VDD from the application.
Due to the range of IDDhigh, self-heating can be critical.
The junction temperature can be reduced with pulsed
supply voltage. For supply times (ton) ranging from 30 µs
to 1 ms, the following equation can be used:
DT+IDD *V
DD *R
th *ton
toff )ton
5.5. EMC and ESD
For applications with disturbances on the supply line or
radiated disturbances, a series resistor and a capacitor
are recommended (see Fig. 5–3). The series resistor
and the capacitor should be placed as closely as pos-
sible to the HAL sensor.
Applications with this arrangement passed the EMC
tests according to the product standards DIN 40839.
Note: The international standard ISO 7637 is similar to
the product standard DIN 40839.
Please contact Micronas for detailed information and
first EMC and ESD results.
4.7 nF
VEMC
RV1
100 Ω
GND2, x
1VDD
RV2
30 Ω
Fig. 5–3: Recommended EMC test circuit
x = pin 3 for TO92UA-1/-2 package
x = pin 4 for SOT89B-1 package
HAL57x, HAL58x DATA SHEET
32 Micronas
6. Data Sheet History
1. Final Data Sheet: “HAL574...576, 581, 584 Two-
Wire Hall Effect Sensor Family”, April 11, 2002
6251-538-1DS. First release of the final data sheet.
Major changes:
– “K” temperature range specified
– HAL571 and HAL573 deleted
– HAL576 added
2. Final Data Sheet: “HAL573...576, 581, 584 Two-
Wire Hall Effect Sensor Family”, Nov. 27, 2003
6251-538-2DS. Second release of the final data
sheet. Major changes:
– specification for HAL573 added
– new package diagrams for SOT89-1 and TO92UA-1
– package diagram for TO92UA-2 added
– ammopack diagrams for TO92UA-1/-2 added
Micronas GmbH
Hans-Bunte-Strasse 19
D-79108 Freiburg (Germany)
P.O. Box 840
D-79008 Freiburg (Germany)
Tel. +49-761-517-0
Fax +49-761-517-2174
E-mail: docservice@micronas.com
Internet: www.micronas.com
Printed in Germany
Order No. 6251-538-2DS
All information and data contained in this data sheet are without any
commitment, are not to be considered as an offer for conclusion of a
contract, nor shall they be construed as to create any liability. Any new
issue of this data sheet invalidates previous issues. Product availability
and delivery are exclusively subject to our respective order confirma-
tion form; the same applies to orders based on development samples
delivered. By this publication, Micronas GmbH does not assume re-
sponsibility for patent infringements or other rights of third parties
which may result from its use.
Further, Micronas GmbH reserves the right to revise this publication
and to make changes to its content, at any time, without obligation to
notify any person or entity of such revisions or changes.
No part of this publication may be reproduced, photocopied, stored on
a retrieval system, or transmitted without the express written consent
of Micronas GmbH.
