© Semiconductor Components Industries, LLC, 1994
October, 2016 − Rev. 12 1Publication Order Number:
BAS116LT1/D
BAS116L
Switching Diode
Features
Low Leakage Current Applications
Medium Speed Switching Times
Available in 8 mm Tape and Reel
Use BAS116LT1G to order the 7 inch/3,000 unit reel
S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Continuous Reverse Voltage VR75 Vdc
Peak Forward Current IF200 mAdc
Peak Forward Surge Current IFM(surge) 500 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board (Note 1)
TA = 25°C
Derate above 25°C
PD225
1.8
mW
mW/°C
Thermal Resistance, Junction−to−Ambient RqJA 556 °C/W
Total Device Dissipation
Alumina Substrate (Note 2) TA = 25°C
Derate above 25°C
PD300
2.4
mW
mW/°C
Thermal Resistance, Junction−to−Ambient RqJA 417 °C/W
Junction and Storage Temperature TJ, Tstg 55 to
+150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
3
CATHODE 1
ANODE
Device Package Shipping
ORDERING INFORMATION
SOT−23 (TO−236)
CASE 318
STYLE 8
MARKING DIAGRAM
12
3
JV M G
G
BAS116LT1G
SBAS116LT1G SOT−23
(Pb−Free) 3000 / Tape & Ree
l
JV = Specific Device Code
M = Date Code*
G= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
BAS116LT3G
NSVBAS116LT3G SOT−23
(Pb−Free) 10000 / Tape &
Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer t o our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
www.onsemi.com
BAS116L
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage (IBR = 100 mAdc) V(BR) 75 Vdc
Reverse Voltage Leakage Current (VR = 75 Vdc)
Reverse Voltage Leakage Current (VR = 75 Vdc, TJ = 150°C) IR
5.0
80 nAdc
Forward Voltage (IF = 1.0 mAdc)
Forward Voltage (IF = 10 mAdc)
Forward Voltage (IF = 50 mAdc)
Forward Voltage (IF = 150 mAdc)
VF
900
1000
1100
1250
mV
Diode Capacitance (VR = 0 V, f = 1.0 MHz) CD 2.0 pF
Reverse Recovery Time (IF = IR = 10 mAdc) (Figure 1) trr 3.0 ms
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA.
2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
3. tp » trr
+10 V 2.0 k
820
W
0.1 mF
DUT
VR
100 mH
0.1 mF
50 W Output
Pulse
Generator
50 W INPUT
SAMPLING
OSCILLOSCOPE
trtpt
10%
90%
IF
IR
trr t
iR(REC) = 1.0 mA
OUTPUT PULSE
(IF = IR = 10 mA; MEASURED
at iR(REC) = 1.0 mA)
IF
INPUT SIGNAL
Figure 1. Recovery Time Equivalent Test Circuit
BAS116L
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3
TYPICAL CHARACTERISTICS
Figure 2. Forward Voltage Figure 3. Leakage Current
VF, FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE (V)
1.21.00.80.60.40.20
0.1
1
10
100
1,000
706050403020100
0.01
0.1
1.0
10
100
IF, FORWARD CURRENT (mA)
IR, REVERSE CURRENT (nA)
150°C−55°C
25°C
80
TA = 150°C
Figure 4. Capacitance
VR, REVERSE VOLTAGE (V)
706050403020100
0
0.2
0.4
0.6
0.8
1.0
1.2
CT, TOTAL CAPACITANCE (pF)
80
TA = 25°C
−55°C
25°C
BAS116L
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4
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AR
D
A1
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
SOLDERING FOOTPRINT*
VIEW C
L
0.25
L1
e
EE
b
A
SEE VIEW C
DIM
AMIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.000
b0.37 0.44 0.50 0.015
c0.08 0.14 0.20 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.30 0.43 0.55 0.012
0.039 0.044
0.002 0.004
0.017 0.020
0.006 0.008
0.114 0.120
0.051 0.055
0.075 0.080
0.017 0.022
NOM MAX
L1
H
2.10 2.40 2.64 0.083 0.094 0.104
HE0.35 0.54 0.69 0.014 0.021 0.027
c0 −−− 10 0 −−− 10
T°°°°
T
3X
TOP VIEW
SIDE VIEW END VIEW
2.90
0.80
DIMENSIONS: MILLIMETERS
0.90
PITCH
3X
3X 0.95
RECOMMENDED
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
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P
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Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
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Phone: 81−3−5817−1050
BAS116LT1/D
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