SiTime Corporation 990 Almanor Avenue Sunnyvale, CA 94085 (408) 328-4400 www.sitime.com
Rev. 0.85 Revised December 21, 2011
SiT8208
Ultra Performance Oscillator
Preliminary
Note:
1. All electrical specifications in the above table are measured with 15pF output load, unless stated otherwise in the Condition.
■Any frequency between 1 and 80 MHz with 6 decimal places of accuracy
■100% pin-to-pin drop-in replacement to quartz-based TCXO
■Ultra low phase jitter: 0.5 ps (12 kHz to 20 MHz)
■Frequency stability as low as ±10 PPM
■LVCMOS/LVTTL compatible output
■Standby or output enable modes
■Three industry-standard 4-pin packages: 3.2 x 2.5, 5.0 x 3.2, 7.0 x 5.0 mm
■Contact SiTime for the following options:
•S
oftEdgeTM configurable rise/fall time for EMI reduction or driving higher loads
• 2.5 x 2.0 footprint compatbile package
■Outstanding silicon reliability of 2 FIT (10x improvement over quartz-based devices)
■Ultra short lead time
■Ideal for high-speed serial protocols such as: SATA, SAS, Ethernet, PCI Express, etc.
Electrical Characteristics
Parameter Symbol Min. Typ. Max. Unit Condition
Output Frequency Range f 1 – 80 MHz
Frequency Stability F_stab -10 – +10 PPM Inclusive of Initial tolerance at 25 °C, operating temperature, rated
supply voltage variation and load variation (15% pF ±10%)
-20 – +20 PPM
-25 – +25 PPM
-50 – +50 PPM
Operating Temperature Range T_use -20 – +70 °C Extended Commercial
-40 – +85 °C Industrial
Supply Voltage Vdd 1.71 1.8 1.89 V Any supply voltage between 2.5 V and 3.3V is supported in increment
of 0.1 V. Contact SiTime for guaranteed performance specs for supply
voltages not specified in this talbe.
2.25 2.5 2.75 V
2.52 2.8 3.08 V
2.97 3.3 3.63 V
Current Consumption Idd – 31 33 mA No load condition, f = 20 MHz, Vdd = 2.5 V, 2.8 V or 3.3 V
– 29 31 mA No load condition, f = 20 MHz, Vdd = 1.8 V
Standby Current I_std – – 70 μA Vdd = 2.5 V, 2.8V or 3.3V, ST = GND, output is Weakly Pulled Down
––10μA Vdd = 1.8 V. ST = GND, output is Weakly Pulled Down
Duty Cycle DC 45 – 55 % All Vdds.
Rise/Fall Time Tr, Tf – 1.5 2 ns 15 pF load, 10% - 90% Vdd, all Vdds
– 3.6 – ns 30 pF load, 10% - 90% Vdd, all Vdds
4.6 ns 45 pF load, 10% - 90% Vdd, all Vdds
Output Voltage High VOH 90% – – Vdd IOH = -7 mA, IOL = 7 mA, (Vdd = 3.3 V)
IOH = -4 mA, IOL = 4 mA, (Vdd = 2.8 V and Vdd = 2.5 V)
IOH = -2 mA, IOL = 2 mA, (Vdd = 1.8 V)
Output Voltage Low VOL – – 10% Vdd
Input Voltage High VIH 70% – – Vdd Pin 1, OE or ST
Input Voltage Low VIL – – 30% Vdd Pin 1, OE or ST
Input Pull-up Impedance Z_in – 100 250 kΩ
Startup Time T_start – 6 10 ms Measured from the time Vdd reaches its rated minimum value
OE Enable/Disable Time T_oe – – 150 ns f=80 MHz, all Vdds. For other frequencies, T_oe = 100 ns + 3 cycles
Resume Time T_resume – 6 10 ms Measured from the time ST pin crosses 50% threshold
RMS Period Jitter T_jitt – 1.5 2 ps f = 75 MHz, Vdd = 2.5 V, 2.8 V or 3.3 V
– 2 3 ps f = 75 MHz, Vdd = 1.8 V
RMS Phase Jitter (random) T_phj – 0.5 1 ps f = 75 MHz, Integration bandwidth = 12 kHz to 20MHz, All Vdds
Aging F_aging – ±1 –PPM1
st year, 25°C
■
Features, Benefits and Applications
■ Specifications
SiT8208
Ultra Performance Oscillator
Preliminary
Rev. 0.85 Page 2 of 4 www.sitime.com
Pin Description Tables
Absolute Maximum Table
Attempted operation outside the absolute maximum ratings of the part may cause permanent damage to the part. Actual performance of the IC
is only guaranteed within the operational specifications, not at absolute maximum ratings.
Environmental Compliance
Phase Noise Plot
Note:
2. A resistor of <100 kΩ between OE/ST pin and VDD is recommended for all voltages.
Pin #1 Functionality Pin Map
OE Pin Connection
H or Open[2]: specified frequency output 1 OE/ST
L: output is high impedance. Only output driver is disabled. 2 GND
ST 3CLK
H or Open: specified frequency output 4 VDD
L: output is low (weak pull down). Device goes to sleep mode. Supply
current reduces to I_std
Parameter Min. Max. Unit
Storage Temperature -65 150 °C
VDD -0.5 4 V
Electrostatic Discharge – 2000 V
Soldering Temperature (follow standard Pb free soldering guidelines) – 260 °C
Number of Program Writes – 1 NA
Program Retention over -40 to 125°C, Process, VDD (0 to 3.65 V) 1,000+ – years
Parameter Condition/Test Method
Mechanical Shock MIL-STD-883F, Method 2002
Mechanical Vibration MIL-STD-883F, Method 2007
Temperature Cycle JESD22, Method A104
Solderability MIL-STD-883F, Method 2003
Moisture Sensitivity Level MSL1 @ 260°C
■
Specifications (Cont.)
103104105106
-180
-160
-140
-120
-100
-80
-60
-40
Frequency offset (Hz)
Phase noise (dBc/Hz)
Integrated random phase jitter (12kHz to 5MHz): 0.57 ps,RMS
Phase noise, 20 MHz, 3.3V, LVCMOS output
SiT8208
Ultra Performance Oscillator
Preliminary
Rev. 0.85 Page 3 of 4 www.sitime.com
.........................................................................................................‘‘‘
Notes:
3. Y denotes manufacturing origin and XXXX denotes manufacturing lot number. The value of “Y” will depend on the assembly location of the device.
4. A capacitor of value 0.1 μF between Vdd and GND is recommended.
Package Size – Dimensions (Unit: mm)[3] Recommended Land Pattern (Unit: mm)[4]
3.2 x 2.5 x 0.75 mm
5.0 x 3.2 x 0.75 mm
7.0 x 5.0 x 0.90 mm
■ Dimensions and Land Patterns
3.2 ± 0.15
2.5 ± 0.15
2.1
0.9
0.7
0.9
0.75 ± 0.05
#1
#2
#4#3
#2
#1
#3#4
YXXXX
2.2
1.9
1.4
1.2
5.0 ± 0.15
3.2 ± 0.15
2.39
0.8
1.15
1.1
0.75 ± 0.05
#1
#2
#4#3
#2
#1
#3#4
YXXXX
2.54
1.5
1.6
2.2
5.08
3.81
2.2
2.0
Rev. 0.85 Page 4 of 4 Revised December 21, 2011
© SiTime Corporation 2011. The information contained herein is subject to change at any time without notice. SiTime assumes no responsibility or liability for any loss, damage or defect of a
Product which is caused in whole or in part by (i) use of any circuitry other than circuitry embodied in a SiTime product, (ii) misuse or abuse including static discharge, neglect or accident, (iii)
unauthorized modification or repairs which have been soldered or altered during assembly and are not capable of being tested by SiTime under its normal test conditions, or (iv) improper
installation, storage, handling, warehousing or transportation, or (v) being subjected to unusual physical, thermal, or electrical stress.
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strictly prohibited.
SiT8208
Ultra Performance Oscillator
Preliminary
Note:
5. Contact SiTime for different drive strength options for driving higher loads or reducing EMI.
■ Part No. Guide - How to Order
Frequency
1.000000 to 80.000000 MHz
Part Family
“SiT8208”
Revision Letter
“A” is the silicon revision
Temperature Range
“I” Industrial, -40 to 85ºC
Voltage Supply
“18” for 1.8V ±5%
“25” for 2.5V ±10%
“28” for 2.8V ±10%
“33” for 3.3V ±10%
Packaging
Blank for Bulk
Output Driver Strength
“–” Default
Feature Pin
“E” for Output Enable
“S” for Standby
“C” Ext. Commercial, -20 to 70ºC
Frequency Tolerance
“2” for ±25 PPM
“3” for ±50 PPM
Package Size
“2” 3.2 x 2.5 mm
“3” 5.0 x 3.2 mm
“T”: Tape & Reel, 3K reel
“Y”: Tape & Reel, 1K reel
“8” 7.0 x 5.0 mm
SiT8208AC -23-25E - 7 5 . 123456T
[5]
“1” for ±20 PPM
“F” for ±10 PPM