SiT8208 Ultra Performance Oscillator Preliminary Features, Benefits and Applications Any frequency between 1 and 80 MHz with 6 decimal places of accuracy 100% pin-to-pin drop-in replacement to quartz-based TCXO Ultra low phase jitter: 0.5 ps (12 kHz to 20 MHz) Frequency stability as low as 10 PPM LVCMOS/LVTTL compatible output Standby or output enable modes Three industry-standard 4-pin packages: 3.2 x 2.5, 5.0 x 3.2, 7.0 x 5.0 mm Contact SiTime for the following options: * SoftEdgeTM configurable rise/fall time for EMI reduction or driving higher loads * 2.5 x 2.0 footprint compatbile package Outstanding silicon reliability of 2 FIT (10x improvement over quartz-based devices) Ultra short lead time Ideal for high-speed serial protocols such as: SATA, SAS, Ethernet, PCI Express, etc. Specifications Electrical Characteristics Parameter Output Frequency Range Frequency Stability Symbol Min. Typ. Max. Unit f F_stab 1 -10 - - 80 +10 MHz PPM -20 - +20 PPM -25 - +25 PPM -50 -20 -40 1.71 2.25 2.52 2.97 - - - - 45 - - +50 +70 +85 1.89 2.75 3.08 3.63 33 31 70 10 55 2 - Standby Current I_std Duty Cycle Rise/Fall Time DC Tr, Tf Output Voltage High VOH 90% - - - 1.8 2.5 2.8 3.3 31 29 - - - 1.5 3.6 4.6 - - PPM C C V V V V mA mA A A % ns ns ns Vdd Output Voltage Low VOL - - 10% Vdd VIH VIL Z_in T_start T_oe T_resume T_jitt T_phj 70% - - - - - - - - - - 100 6 - 6 1.5 2 0.5 - 30% 250 10 150 10 2 3 1 Vdd Vdd k ms ns ms ps ps ps F_aging - 1 - PPM Operating Temperature Range T_use Supply Voltage Vdd Current Consumption Idd Input Voltage High Input Voltage Low Input Pull-up Impedance Startup Time OE Enable/Disable Time Resume Time RMS Period Jitter RMS Phase Jitter (random) Aging Condition Inclusive of Initial tolerance at 25 C, operating temperature, rated supply voltage variation and load variation (15% pF 10%) Extended Commercial Industrial Any supply voltage between 2.5 V and 3.3V is supported in increment of 0.1 V. Contact SiTime for guaranteed performance specs for supply voltages not specified in this talbe. No load condition, f = 20 MHz, Vdd = 2.5 V, 2.8 V or 3.3 V No load condition, f = 20 MHz, Vdd = 1.8 V Vdd = 2.5 V, 2.8V or 3.3V, ST = GND, output is Weakly Pulled Down Vdd = 1.8 V. ST = GND, output is Weakly Pulled Down All Vdds. 15 pF load, 10% - 90% Vdd, all Vdds 30 pF load, 10% - 90% Vdd, all Vdds 45 pF load, 10% - 90% Vdd, all Vdds IOH = -7 mA, IOL = 7 mA, (Vdd = 3.3 V) IOH = -4 mA, IOL = 4 mA, (Vdd = 2.8 V and Vdd = 2.5 V) IOH = -2 mA, IOL = 2 mA, (Vdd = 1.8 V) Pin 1, OE or ST Pin 1, OE or ST Measured from the time Vdd reaches its rated minimum value f=80 MHz, all Vdds. For other frequencies, T_oe = 100 ns + 3 cycles Measured from the time ST pin crosses 50% threshold f = 75 MHz, Vdd = 2.5 V, 2.8 V or 3.3 V f = 75 MHz, Vdd = 1.8 V f = 75 MHz, Integration bandwidth = 12 kHz to 20MHz, All Vdds 1st year, 25C Note: 1. All electrical specifications in the above table are measured with 15pF output load, unless stated otherwise in the Condition. SiTime Corporation Rev. 0.85 990 Almanor Avenue Sunnyvale, CA 94085 (408) 328-4400 www.sitime.com Revised December 21, 2011 SiT8208 Ultra Performance Oscillator Preliminary Specifications (Cont.) Pin Description Tables Pin #1 Functionality OE Pin Map Pin Connection H or Open[2]: specified frequency output 1 OE/ST L: output is high impedance. Only output driver is disabled. 2 GND 3 CLK 4 VDD ST H or Open: specified frequency output L: output is low (weak pull down). Device goes to sleep mode. Supply current reduces to I_std Absolute Maximum Table Attempted operation outside the absolute maximum ratings of the part may cause permanent damage to the part. Actual performance of the IC is only guaranteed within the operational specifications, not at absolute maximum ratings. Min. Max. Unit Storage Temperature Parameter -65 150 C VDD -0.5 4 V Electrostatic Discharge - 2000 V Soldering Temperature (follow standard Pb free soldering guidelines) - 260 C - 1 NA 1,000+ - years Number of Program Writes Program Retention over -40 to 125C, Process, VDD (0 to 3.65 V) Environmental Compliance Parameter Condition/Test Method Mechanical Shock MIL-STD-883F, Method 2002 Mechanical Vibration MIL-STD-883F, Method 2007 Temperature Cycle JESD22, Method A104 Solderability MIL-STD-883F, Method 2003 Moisture Sensitivity Level MSL1 @ 260C Phase Noise Plot -40 Phase noise (dBc/Hz) -60 Phase noise, 20 MHz, 3.3V, LVCMOS output Integrated random phase jitter (12kHz to 5MHz): 0.57 ps,RMS -80 -100 -120 -140 -160 -180 3 10 4 10 5 10 Frequency offset (Hz) 6 10 Note: 2. A resistor of <100 k between OE/ST pin and VDD is recommended for all voltages. Rev. 0.85 Page 2 of 4 www.sitime.com SiT8208 Ultra Performance Oscillator Preliminary Dimensions and Land Patterns .........................................................................................................``` Package Size - Dimensions (Unit: mm)[3] Recommended Land Pattern (Unit: mm)[4] 3.2 x 2.5 x 0.75 mm 3.2 0.15 2.1 #3 #4 0.7 1.9 0.9 #2 #1 0.9 0.75 0.05 #2 1.2 YXXXX #1 2.2 #3 2.5 0.15 #4 1.4 5.0 x 3.2 x 0.75 mm 5.0 0.15 #4 #2 #1 2.2 0.8 1.6 0.75 0.05 #2 #3 1.1 YXXXX #1 2.54 2.39 #3 3.2 0.15 #4 1.15 1.5 7.0 x 5.0 x 0.90 mm 0.90 0.10 2.0 1.1 3.81 2.6 5.0 0.15 YXXXX 5.08 5.08 7.0 0.15 1.4 2.2 Notes: 3. Y denotes manufacturing origin and XXXX denotes manufacturing lot number. The value of "Y" will depend on the assembly location of the device. 4. A capacitor of value 0.1 F between Vdd and GND is recommended. Rev. 0.85 Page 3 of 4 www.sitime.com SiT8208 Ultra Performance Oscillator Preliminary Part No. Guide - How to Order SiT8208AC -23-25E - 7 5 . 1 2 3 4 5 6 T Packaging "T": Tape & Reel, 3K reel "Y": Tape & Reel, 1K reel Blank for Bulk Part Family "SiT8208" Frequency 1.000000 to 80.000000 MHz Revision Letter "A" is the silicon revision Feature Pin "E" for Output Enable "S" for Standby Temperature Range "C" Ext. Commercial, -20 to 70C "I" Industrial, -40 to 85C Voltage Supply "18" for 1.8V 5% "25" for 2.5V 10% "28" for 2.8V 10% "33" for 3.3V 10% [5] Output Driver Strength "-" Default Package Size "2" 3.2 x 2.5 mm Frequency Tolerance "F" for 10 PPM "3" 5.0 x 3.2 mm "8" 7.0 x 5.0 mm "1" for 20 PPM "2" for 25 PPM "3" for 50 PPM Note: 5. Contact SiTime for different drive strength options for driving higher loads or reducing EMI. (c) SiTime Corporation 2011. The information contained herein is subject to change at any time without notice. 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Disclaimer: SiTime makes no warranty of any kind, express or implied, with regard to this material, and specifically disclaims any and all express or implied warranties, either in fact or by operation of law, statutory or otherwise, including the implied warranties of merchantability and fitness for use or a particular purpose, and any implied warranty arising from course of dealing or usage of trade, as well as any common-law duties relating to accuracy or lack of negligence, with respect to this material, any sitime product and any product documentation. products sold by sitme are not suitable or intended to be used in a life support application or component, to operate nuclear facilities, or in other mission critical applications where human life may be involved or at stake. all sales are made conditioned upon compliance with the critical uses policy set forth below. CRITICAL USE EXCLUSION POLICY BUYER AGREES NOT TO USE SITIME'S PRODUCTS FOR ANY APPLICATION OR IN ANY COMPONENTS USED IN LIFE SUPPORT DEVICES OR TO OPERATE NUCLEAR FACILITIES OR FOR USE IN OTHER MISSION-CRITICAL APPLICATIONS OR COMPONENTS WHERE HUMAN LIFE OR PROPERTY MAY BE AT STAKE. SiTime owns all rights, title and interest to the intellectual property related to SiTime's products, including any software, firmware, copyright, patent, or trademark. The sale of SiTime products does not convey or imply any license under patent or other rights. SiTime retains the copyright and trademark rights in all documents, catalogs and plans supplied pursuant to or ancillary to the sale of products or services by SiTime. Unless otherwise agreed to in writing by SiTime, any reproduction, modification, translation, compilation, or representation of this material shall be strictly prohibited. Rev. 0.85 Page 4 of 4 Revised December 21, 2011