© 2003 IXYS All rights reserved
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
BVCES IC= 1 mA, VGE = 0 V 1000 V
VGE(th) IC= 250 µA, VCE = VGE 2.5 5.0 V
ICES VCE = VCES TJ = 25°C 250 µA
VGE = 0 V TJ = 125°C1mA
IGES VCE = 0 V, VGE = ±20 V ±100 nA
VCE(sat) IC= ICE90, VGE = 15 2.2 3.0 V
IGBT
Symbol Test Conditions Maximum Ratings
VCES TJ= 25°C to 150°C 1000 V
VCGR TJ= 25°C to 150°C; RGE = 1 MΩ1000 V
VGES Continuous ±20 V
VGEM Transient ±30 V
IC25 TC= 25°C40A
IC90 TC= 90°C20A
ICM TC= 25°C, 1 ms 80 A
SSOA VGE = 15 V, TVJ = 125°C, RG = 47 Ω ICM = 40 A
(RBSOA) Clamped inductive load, L = 300 µH @ 0.8 VCES
PCTC= 25°C 150 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
MdMounting torque with screw M3 0.45/4 Nm/lb.in.
Mounting torque with screw M3.5 0.55/5 Nm/lb.in.
Weight TO-220 4 g
TO-263 2 g
DS98615B(01/03)
Features
•International standard packages
JEDEC TO-220AB and TO-263AA
•High current handling capability
•MOS Gate turn-on
- drive simplicity
Applications
•AC motor speed control
•DC servo and robot drives
•DC choppers
•Uninterruptible power supplies (UPS)
•Switch-mode and resonant-mode
power supplies
•Capacitor discharge
Advantages
•Easy to mount with one screw
•Reduces assembly time and cost
•High power density
G
EC (TAB)
TO-263 AA (IXGA)
GCE
TO-220AB (IXGP)
VCES = 1000 V
IC25 = 40 A
VCE(sat) = 3.0 V
IXGA 20N100
IXGP 20N100
Preliminary Data Sheet
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
TO-263 AA Outline
1. Gate
2. Collector
3. Emitter
4. Collector
Bottom Side
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.06 4.83 .160 .190
A1 2.03 2.79 .080 .110
b 0.51 0.99 .020 .039
b2 1.14 1.40 .045 .055
c 0.46 0.74 .018 .029
c2 1.14 1.40 .045 .055
D 8.64 9.65 .340 .380
D1 7.11 8.13 .280 .320
E 9.65 10.29 .380 .405
E1 6.86 8.13 .270 .320
e 2.54 BSC .100 BSC
L 14.61 15.88 .575 .625
L1 2.29 2.79 .090 .110
L2 1.02 1.40 .040 .055
L3 1.27 1.78 .050 .070
L4 0 0.38 0 .015
R 0.46 0.74 .018 .029
Pins: 1 - Gate 2 - Collector
3 - Emitter 4 - Collector
Bottom Side
TO-220 AB Dimensions
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
gfs IC= IC90; VCE = 10 V, 12 16 S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
Cies 1750 pF
Coes VCE = 25 V, VGE = 0 V, f = 1 MHz 100 pF
Cres 38 pF
IC(ON) VGE = 10V, VCE = 10V 90 A
Qg73 nC
Qge IC= IC90, VGE = 15 V, VCE = 0.5 VCES 13 nC
Qgc 26 nC
td(on) 30 ns
tri 30 ns
td(off) 350 700 ns
tfi 280 700 ns
Eoff 3.5 8.0 mJ
td(on) 30 ns
tri 30 ns
Eon 0.65 mJ
td(off) 700 ns
tfi 520 ns
Eoff 6.5 mJ
RthJC 0.83 K/W
RthCK TO-220 0.5 K/W
Inductive load, TJ = 25°°
°°
°C
IC= IC90, VGE = 15 V
VCE = 800 V, RG = Roff = 47 Ω
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 VCES,
higher TJ or increased RG
Inductive load, TJ = 125°°
°°
°C
IC= IC90, VGE = 15 V
VCE = 800 V, RG = Roff = 47 Ω
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 VCES,
higher TJ or increased RG
IXGA 20N100
IXGP 20N100
Min. Recommended Footprint
(Dimensions in inches and mm)
