MITSUBISHI TRANSISTOR MODULES QM150DY-24BK HIGH POWER SWITCHING USE INSULATED TYPE QM150DY-24BK * * * * * IC Collector current ........................ 150A VCEX Collector-emitter voltage ......... 1200V hFE DC current gain............................. 750 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION Inverters, Servo drives, UPS, DC motor controllers, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 108 4-6.5 930.25 B2X 14 8 15.3 C2E1 21.5 E1 B1 8 17 3 Tab#110, t=0.5 LABEL 37 9.5 17 16 8 30 17 7 3 C1 1.8 B1X 3-M6 E2 8 25 25 62 6 9 B1X C1 E2 10.5 6 B1 E1 15 30 E2 480.25 B2X E2 B2 B2 C2E1 Feb.1999 MITSUBISHI TRANSISTOR MODULES QM150DY-24BK HIGH POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol (Tj=25C, unless otherwise noted) Ratings Unit VCEX (SUS) Collector-emitter voltage IC=1A, VEB=2V 1200 V VCEX Collector-emitter voltage VEB=2V 1200 V VCBO Collector-base voltage Emitter open 1200 V VEBO Emitter-base voltage Collector open IC Collector current DC -IC Collector reverse current DC (forward diode current) 150 A PC Collector dissipation TC=25C 1000 W IB Base current DC 8 A -ICSM Surge collector reverse current (forward diode current) Peak value of one cycle of 60Hz (half wave) 1500 A Tj Junction temperature -40~+150 C Tstg Storage temperature -40~+125 C Viso Isolation voltage Parameter Conditions Charged part to case, AC for 1 minute Main terminal screw M6 -- Mounting torque Mounting screw M6 -- Typical value Weight ELECTRICAL CHARACTERISTICS 7 V 150 A 2500 V 1.96~2.94 N*m 20~30 kg*cm 1,96~2.94 N*m 20~30 kg*cm 470 g (Tj=25C, unless otherwise noted) Limits Symbol Test conditions Parameter Min. Typ. Max. Unit ICEX Collector cutoff current VCE=1200V, VEB=2V -- -- 4.0 mA ICBO Collector cutoff current VCB=1200V, Emitter open -- -- 4.0 mA IEBO Emitter cutoff current VEB=7V -- -- 100 mA VCE (sat) Collector-emitter saturation voltage -- -- 4.0 V VBE (sat) Base-emitter saturation voltage -- -- 4.0 V -VCEO Collector-emitter reverse voltage -IC=150A (diode forward voltage) -- -- 1.8 V hFE DC current gain IC=150A, VCE=4V 750 -- -- -- -- -- 2.5 s Switching time VCC=600V, IC=150A, IB1=0.3A, -IB2=3A -- -- 15 s -- -- 3.0 s Transistor part (per 1/2 module) -- -- 0.125 C/ W Diode part (per 1/2 module) -- -- 0.6 C/ W Conductive grease applied (per 1/2 module) -- -- 0.075 C/ W IC=150A, IB=200mA ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM150DY-24BK HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) Tj=25C IB=0.6A DC CURRENT GAIN hFE IB=400mA 200 IB=200mA 150 IB=40mA 100 50 IB=20mA 0 0 1 2 3 4 5 COLLECTOR-EMITTER VOLTAGE VCE (V) BASE CURRENT IB (A) 3 2 Tj=25C VCE=4V 10 0 7 5 4 3 2 10 -1 7 5 4 3 2.6 3.0 3.4 3.8 BASE-EMITTER VOLTAGE 4.2 4.6 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 10 1 7 5 4 3 2 VBE(sat) 10 0 7 5 4 3 2 VCE(sat) 10 -1 10 1 VBE (V) IB=200mA Tj=25C Tj=125C 2 3 4 5 7 10 2 2 3 4 5 7 10 3 COLLECTOR CURRENT IC (A) SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) 2 4 IC=200A 3 IC=150A IC=100A 1 Tj=25C Tj=125C 0 10 -2 2 3 4 5 7 10 -12 3 4 5 7 10 0 2 3 4 5 7 10 1 BASE CURRENT IB (A) ton, ts, tf (s) 5 SWITCHING TIME COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) VCE=10V VCE=4V 10 3 7 5 4 3 2 COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) 2 Tj=25C Tj=125C COLLECTOR CURRENT IC (A) VCE (sat), VBE (sat) (V) COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) 10 4 7 5 4 3 2 10 2 SATURATION VOLTAGE COLLECTOR CURRENT IC (A) 250 DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) 10 1 7 5 4 3 2 ts 10 0 7 tf 5 4 3 ton 2 10 1 2 3 4 5 7 10 2 VCC=600V IB1=0.3A -IB2=3A Tj=25C Tj=125C 2 3 4 5 7 10 3 COLLECTOR CURRENT IC (A) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM150DY-24BK HIGH POWER SWITCHING USE INSULATED TYPE SWITCHING TIME VS. BASE CURRENT (TYPICAL) 320 ts 10 1 7 5 4 3 2 tf VCC=600V IC=150A IB1=300mA Tj=25C Tj=125C 10 0 7 5 4 3 COLLECTOR CURRENT IC (A) SWITCHING TIME ts, tf (s) 3 2 REVERSE BIAS SAFE OPERATING AREA 3 4 5 7 10 1 2 3 4 5 7 10 2 280 240 200 160 120 80 40 0 2 3 BASE REVERSE CURRENT -IB2 (A) 100 1ms DC 200s 10 1 7 5 3 2 TC=25C NON-REPETITIVE 10 0 10 0 2 3 5 7 10 1 2 3 5 7 10 2 2 3 5 7 10 3 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0 10 -3 2 3 5 710 -2 2 3 5 7 10 -1 2 3 5 7 10 0 TIME (s) 80 70 60 50 COLLECTOR DISSIPATION 40 30 20 10 0 0 VCE (V) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 5 7 10 1 2 3 0.16 VCE (V) SECOND BREAKDOWN AREA 90 50s DERATING FACTOR (%) 100s COLLECTOR-EMITTER VOLTAGE Zth (j-c) (C/ W) 200 400 600 800 1000 1200 1400 DERATING FACTOR OF F. B. S. O. A. 20 40 60 80 100 120 140 160 CASE TEMPERATURE COLLECTOR REVERSE CURRENT -IC (A) COLLECTOR CURRENT IC (A) 10 2 7 5 3 2 0 COLLECTOR-EMITTER VOLTAGE FORWARD BIAS SAFE OPERATING AREA 10 3 7 5 3 2 Tj=125C -IB2=3A TC (C) REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL) 3 10 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 10 0 0.4 Tj=25C Tj=125C 0.8 1.2 1.6 2.0 2.4 COLLECTOR-EMITTER REVERSE VOLTAGE -VCEO (V) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM150DY-24BK HIGH POWER SWITCHING USE INSULATED TYPE REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 10 3 7 5 3 2 Irr (A), Qrr (c) 1500 1000 500 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 CONDUCTION TIME (CYCLES AT 60Hz) 10 2 7 5 3 2 10 2 Irr 10 1 trr (s) SURGE COLLECTOR REVERSE CURRENT -ICSM (A) RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) Qrr 10 1 10 0 7 VCC=600V trr 5 IB1=0.3A 3 -IB2=3A Tj=25C 2 Tj=125C 0 10 10 -1 10 0 2 3 5 7 10 1 2 3 5 7 10 2 2 3 5 7 10 3 FORWARD CURRENT IF (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE) 10 0 2 3 5 7 10 1 2 3 5 1.0 Zth (j-c) (C/ W) 0.8 0.6 0.4 0.2 0 10 -3 2 3 5 710 -2 2 3 5 7 10 -1 2 3 5 7 10 0 TIME (s) Feb.1999