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MOS FIELD EFFECT TRANSISTOR
2SK3224
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. D13797EJ3V0DS00 (3rd edition)
Date Published August 2004 NS CP(K)
Printed in Japan
The mark ★ shows major revised points.
1999, 2001
DESCRIPTION
The 2SK3224 is N-Channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
• Low on-state resistance
R
DS(on)1 = 40 mΩ MAX. (VGS = 10 V, ID = 10 A)
R
DS(on)2 = 60 mΩ MAX. (VGS = 4.0 V, ID = 10 A)
• Low Ciss : Ciss = 790 pF TYP.
• Built-in gate protection diode
• TO-251/TO-252 package
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) VDSS 60 V
Gate to Source Voltage (VDS = 0 V) VGSS(AC) ±20 V
Gate to Source Voltage (VDS = 0 V) VGSS(DC) +20, −10 V
Drain Current (DC) (TC = 25°C) ID(DC) ±20 A
Drain Current (pulse) Note1 ID(pulse) ±70 A
Total Power Dissipation (TC = 25°C) PT 25 W
Total Power Dissipation (TA = 25°C) PT 1.0 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg –55 to +150 °C
Single Avalanche Current Note2 IAS 10 A
Single Avalanche Energy Note2 EAS 10 mJ
Notes 1. PW ≤ 10
µ
s, Duty cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 30 V, RG = 25 Ω, VGS = 20 → 0 V
ORDERING INFORMATION
PART NUMBER PACKAGE
2SK3224 TO-251 (MP-3)
2SK3224-Z TO-252 (MP-3Z)
(TO-251)
(TO-252)
★
Data Sheet D13797EJ3V0DS
2
2SK3224
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Zero Gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V 10
µ
A
Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±10
µ
A
Gate Cut-off Voltage VGS(off) VDS = 10 V, ID = 1 mA 1.0 1.5 2.0 V
Forward Transfer Admittance Note | yfs | VDS = 10 V, ID = 10 A 8.0 15 S
Drain to Source On-state Resistance Note RDS(on)1 VGS = 10 V, ID = 10 A 24 40 mΩ
RDS(on)2 VGS = 4.0 V, ID = 10 A 33 60 mΩ
Input Capacitance Ciss VDS = 10 V 790 pF
Output Capacitance Coss VGS = 0 V 240 pF
Reverse Transfer Capacitance Crss f = 1 MHz 100 pF
Turn-on Delay Time td(on) VDD = 30 V, ID = 10 A 19 ns
Rise Time tr VGS = 10 V 165 ns
Turn-off Delay Time td(off) RG = 10 Ω 62 ns
Fall Time tf 71 ns
Total Gate Charge QG VDD = 48 V 20 nC
Gate to Source Charge QGS VGS = 10 V 3 nC
Gate to Drain Charge QGD ID = 20 A 6.5 nC
Body Diode Forward Voltage Note VF(S-D) IF = 20 A, VGS = 0 V 0.93 V
Reverse Recovery Time trr If = 20 A, VGS = 0 V 40 ns
Reverse Recovery Charge Qrr di/dt = 100 A/
µ
s 45 nC
Note Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
RG = 25 Ω
50 Ω
PG.
L
VDD
VGS = 20 → 0 V
BVDSS
IAS
IDVDS
Starting Tch
VDD
D.U.T.
TEST CIRCUIT 3 GATE CHARGE
TEST CIRCUIT 2 SWITCHING TIME
PG. RG
0
VGS
D.U.T.
RL
VDD
τ = 1 s
µ
Duty Cycle ≤ 1%
VGS
Wave Form
ID
Wave Form
VGS
10% 90%
VGS
10%
0
ID
90%
90%
td(on) trtd(off) t
f
10%
τ
ID
0
ton toff
PG. 50 Ω
D.U.T.
RL
VDD
IG = 2 mA
Data Sheet D13797EJ3V0DS 3
2SK3224
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
T
C
- Case Temperature - °C
dT - Percentage of Rated Power - %
0020 40 60 80 100 120 140 16
0
20
40
60
80
100
120
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
T
C
- Case Temperature - °C
P
T
- Total Power Dissipation - W
0
020 40 60 80 100 120 140 16
0
35
30
25
20
15
10
5
FORWARD BIAS SAFE OPERATING AREA
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
1
0.1
0.1
10
100
1000
11010
0
T
C
= 25
˚C
Single Pulse
PW
=
10
µs
100
µs
1
ms
10
ms
DC
I
D(DC)
ID(pulse)
R
DS(on)
Limited
(at V
GS
= 10 V)
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
PW - Pulse Width - s
r
th(t)
- Transient Thermal Resistance - ˚C/W
10
0.001
0.01
0.1
1
100
1000
1
m10
m 100
m 1 10 100 1000 10
µµ
100
Single Pulse
R
th(ch-C)
= 5.0˚C/W
R
th(ch-A)
= 125˚C/
W
Data Sheet D13797EJ3V0DS
4
2SK3224
FORWARD TRANSFER CHARACTERISTIC
S
V
GS
- Gate to Source Voltage - V
I
D
- Drain Current - A
1
0.1
10
100
Pulsed
2046
8
V
DS
= 10 V
T
A
= −50˚C
25˚C
75˚C
150˚C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
0023
4
80
100
1
Pulsed
V
GS
=
10 V
V
GS
=
4.0
V
60
40
20
DRAIN TO SOURCE ON-STATE RESISTANCE v
GATE TO SOURCE VOLTAGE
V
GS
- Gate to Source Voltage - V
R
DS(on)
- Drain to Source On-State Resistance - mΩ
05
20
10
0
60
10
Pulsed
50
40
30 I
D
= 10 A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-State Resistance - mΩ
20
10
0.1 101
50
40
30
80
70
60
10
0
Pulsed
0
V
GS
= 4.0 V
V
GS
= 10 V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
I
D
- Drain Current - A
| y
fs
| - Forward Transfer Admittance - S
V
DS
= 10 V
Pulsed
0.1 1
10
100
10 10
0
0.1
1
T
A
= 150˚C
75˚C
25˚C
−50˚C
GATE TO SOURCE CUT-OFF VOLTAGE vs
.
CHANNEL TEMPERATURE
V
GS(off)
- Gate to Source Cut-off Voltage - V
0.5
V
DS
= 10 V
I
D
= 1 mA
1.0
1.5
2.0
−50 0 50 100 150
0
T
ch
- Channel Temperature - ˚C
Data Sheet D13797EJ3V0DS 5
2SK3224
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1.0
ISD - Diode Forward Current - A
01.5
V
SD
- Source to Drain Voltage - V
0.5
Pulsed
0.1
1
10
100
1000
VGS = 0 V
VGS = 10 V
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
C
iss
, C
oss
, C
rss
- Capacitance - pF
10
0.1
100
1000
10000
11010
0
V
GS
= 0 V
f = 1 MHz
C
oss
C
rss
C
iss
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
I
F
- Drain Current - A
t
rr
- Reverse Recovery Time - ns
di/dt = 100 A/µs
V
GS
= 0 V
1
0.1
10
11010
0
1000
100
DRAIN TO SOURCE ON-STATE RESISTANCE v
s.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - ˚C
R
DS(on)
- Drain to Source On-state Resistance - mΩ
0−50
10
0 50 100 150
I
D
= 10
A
20
40
50
60
70
80
90
30
V
GS
= 4.0
V
V
GS
= 10
V
V
GS
- Gate to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
Q
G
- Gate Charge - nC
V
DS
- Drain to Source Voltage - V
00 10203040
20
40
60
80
4
2
0
8
6
V
DD
= 48 V
30 V
12 V
12
10
16
14
V
GS
I
D
= 20 A
V
DS
SWITCHING CHARACTERISTICS
ID - Drain Current - A
td(on), tr, td(off), tf - Switching Time - ns
1
0.1
10
100
1000
10
110
0
VDD = 30 V
VGS = 10 V
RG = 10 Ωtr
tf
td(off)
td(on)
Data Sheet D13797EJ3V0DS
6
2SK3224
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
L - Inductive Load - H
| I
AS
| - Single Avalanche Current - A
V
DD
= 30 V
R
G
= 25 Ω
10 100
10
100
1 m 10
m
0.1
1
I
AS
= 10 A
E
AS
= 10 mJ
V
GS
= 20 → 0 V
Starting T
ch
= 25˚C
µ
µ
SINGLE AVALANCHE ENERGY
DERATING FACTOR
Starting Tch - Starting Channel Temperature - ˚C
Energy Derating Factor - %
25 50 75 100
60
40
20
0
160
140
125 150 17
5
120
100
80
VDD = 30 V
RG = 25 Ω
VGS = 20 → 0 V
IAS ≤ 10 A
Data Sheet D13797EJ3V0DS 7
2SK3224
PACKAGE DRAWINGS (Unit: mm)
1) TO-251 (MP-3)
1.Gate
2.Drain
3.Source
4.Fin (Drain)
213
6.5±0.2
5.0±0.2
4
1.5-
0.1
+0.2
5.5±0.27.0 MIN.
13.7 MIN.
2.32.3
0.75
0.5±0.1
2.3±0.2
1.6±0.2
1.1±0.2
0.5-
0.1
+0.2
0.5-
0.1
+0.2
2) TO-252 (MP-3Z)
1. Gate
2. Drain
3. Source
4. Fin (Drain)
123
4
6.5±0.2
5.0±0.2
4.3 MAX.0.8
2.3 2.3 0.9
MAX.
5.5±0.2
10.0 MAX.
2.0
MIN.
1.5-
0.1
+0.2
2.3±0.2
0.5±0.1
0.8
MAX.
0.8
1.0 MIN.
1.8 TYP.
0.7
1.1±0.2
EQUIVALENT CIRCUIT
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
★
2SK3224
The information in this document is current as of August, 2004. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
all products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may
appear in this document.
NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from the use of NEC Electronics products listed in this document
or any other liability arising from the use of such products. No license, express, implied or otherwise, is
granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others.
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of a customer's equipment shall be done under the full
responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by
customers or third parties arising from the use of these circuits, software and information.
While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products,
customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To
minimize risks of damage to property or injury (including death) to persons arising from defects in NEC
Electronics products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment and anti-failure features.
NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and
"Specific".
The "Specific" quality grade applies only to NEC Electronics products developed based on a customer-
designated "quality assurance program" for a specific application. The recommended applications of an NEC
Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of
each NEC Electronics product before using it in a particular application.
The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC
Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications
not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to
determine NEC Electronics' willingness to support a given application.
(Note)
•
•
•
•
•
•
M8E 02. 11-1
(1)
(2)
"NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its
majority-owned subsidiaries.
"NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as
defined above).
Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots.
Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support).
Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
"Standard":
"Special":
"Specific":