PD - 97006 IRF6645 DirectFET Power MOSFET l l l l l l l l l Typical values (unless otherwise specified) RoHs Compliant Containing No Lead and Bromide Low Profile (<0.7 mm) Dual Sided Cooling Compatible Ultra Low Package Inductance Optimized for High Frequency Switching Ideal for High Performance Isolated Converter Primary Switch Socket Optimized for Synchronous Rectification Low Conduction Losses Compatible with existing Surface Mount Techniques VDSS VGS 100V max 20V max Qg tot 14nC RDS(on) 28m@ 10V Qgd Vgs(th) 4.8nC 4.0V DirectFET ISOMETRIC SJ Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SH SJ SP MZ MN Description The IRF6645 combines the latest HEXFET(R) Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an Micro8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6645 is optimized for primary side bridge topologies in isolated DC-DC applications, for wide range universal input Telecom applications (36V - 75V), and for secondary side synchronous rectification in regulated DC-DC topologies. The reduced total losses in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal for high performance isolated DC-DC converters. Absolute Maximum Ratings Max. Units VDS Drain-to-Source Voltage 100 V VGS Gate-to-Source Voltage 20 Parameter e e @ 10V f ID @ TA = 25C Continuous Drain Current, VGS @ 10V 5.7 ID @ TA = 70C Continuous Drain Current, VGS @ 10V 4.5 ID @ TC = 25C Continuous Drain Current, VGS 25 IDM Pulsed Drain Current EAS Single Pulse Avalanche Energy IAR Avalanche Current g g VGS, Gate-to-Source Voltage (V) Typical R DS (on) (m) ID = 3.4A 70 60 TJ = 125C 50 40 TJ = 25C 30 20 4 6 8 10 12 14 VGS, Gate-to-Source Voltage (V) 16 Fig 1. Typical On-Resistance vs. Gate Voltage Notes: Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET Website. Surface mounted on 1 in. square Cu board, steady state. www.irf.com 45 h 80 A 29 mJ 3.4 A 12 ID= 3.4A 10 VDS = 80V VDS= 50V 8 6 4 2 0 0 4 8 12 16 QG Total Gate Charge (nC) Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage TC measured with thermocouple mounted to top (Drain) of part. Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 5.0mH, RG = 25, IAS = 3.4A. 1 8/5/05 IRF6645 Electrical Characteristic @ TJ = 25C (unless otherwise specified) Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage Parameter 100 --- --- V VDSS/TJ Breakdown Voltage Temp. Coefficient --- 0.12 --- V/C RDS(on) Static Drain-to-Source On-Resistance --- 28 35 m Conditions VGS = 0V, ID = 250A Reference to 25C, ID = 1mA VGS = 10V, ID = 5.7A c VDS = VGS, ID = 50A VGS(th) Gate Threshold Voltage 3.0 --- 4.9 V VGS(th)/TJ Gate Threshold Voltage Coefficient --- -12 --- mV/C IDSS Drain-to-Source Leakage Current --- --- 20 A VDS = 100V, VGS = 0V --- --- 250 VDS = 80V, VGS = 0V, TJ = 125C nA VGS = 20V IGSS Gate-to-Source Forward Leakage --- --- 100 Gate-to-Source Reverse Leakage --- --- -100 gfs Forward Transconductance 7.4 --- --- Qg VGS = -20V S VDS = 10V, ID = 3.4A Total Gate Charge --- 14 20 Qgs1 Pre-Vth Gate-to-Source Charge --- 3.1 --- Qgs2 Post-Vth Gate-to-Source Charge --- 0.8 --- Qgd Gate-to-Drain Charge --- 4.8 7.2 ID = 3.4A Qgodr See Fig. 15 VDS = 50V nC VGS = 10V Gate Charge Overdrive --- 5.3 --- Qsw Switch Charge (Qgs2 + Qgd) --- 5.6 --- Qoss Output Charge --- 7.2 --- nC RG Gate Resistance --- 1.0 --- td(on) Turn-On Delay Time --- 9.2 --- VDD = 50V, VGS = 10Vc tr Rise Time --- 5.0 --- ID = 3.4A td(off) Turn-Off Delay Time --- 18 --- tf Fall Time --- 5.1 --- Ciss Input Capacitance --- 890 --- Coss Output Capacitance --- 180 --- Crss Reverse Transfer Capacitance --- 40 --- = 1.0MHz Coss Output Capacitance --- 870 --- VGS = 0V, VDS = 1.0V, f=1.0MHz Coss Output Capacitance --- 100 --- VGS = 0V, VDS = 80V, f=1.0MHz Min. Typ. Max. --- --- 25 ns VDS = 16V, VGS = 0V RG=6.2 VGS = 0V pF VDS = 25V Diode Characteristics Parameter IS Continuous Source Current (Body Diode) ISM Pulsed Source Current Units MOSFET symbol A --- --- Conditions showing the integral reverse 45 D G S p-n junction diode. (Body Diode)d VSD Diode Forward Voltage --- --- 1.3 V TJ = 25C, IS = 3.4A, VGS = 0V c trr Reverse Recovery Time --- 31 47 ns TJ = 25C, IF = 3.4A, VDD = 50V Qrr Reverse Recovery Charge --- 40 60 nC di/dt = 100A/s c Notes: Pulse width 400s; duty cycle 2%. Repetitive rating; pulse width limited by max. junction temperature. 2 www.irf.com IRF6645 Absolute Maximum Ratings Units Power Dissipation 3.0 W Power Dissipation 1.4 PD @TC = 25C c c Power Dissipation f Max. TP Peak Soldering Temperature 270 TJ Operating Junction and TSTG Storage Temperature Range PD @TA = 25C PD @TA = 70C Parameter 42 C -40 to + 150 Thermal Resistance Parameter cg Junction-to-Ambient dg Junction-to-Ambient eg Junction-to-Case fg RJA Typ. Max. --- 58 Junction-to-Ambient RJA RJA RJC RJ-PCB 12.5 --- 20 --- Junction-to-PCB Mounted --- 3.0 1.0 --- Units C/W 100 Thermal Response ( Z thJA ) D = 0.50 0.20 10 0.10 0.05 R1 R1 0.02 1 J 0.01 J 1 R2 R2 2 1 R3 R3 R4 R4 AC 2 3 3 4 Ci= i/Ri Ci= i/Ri 0.1 Ri (C/W) R5 R5 4 5 C 5 i (sec) 0.6677 0.000066 1.0463 0.000896 1.5612 0.004386 29.2822 0.686180 25.4550 32 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = Pdm x Zthja + Ta SINGLE PULSE ( THERMAL RESPONSE ) 0.01 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient Notes: Surface mounted on 1 in. square Cu, steady state. Used double sided cooling , mounting pad. Mounted on minimum footprint full size board with metalized TC measured with thermocouple incontact with top (Drain) of part. R is measured at TJ of approximately 90C. back and with small clip heatsink. Surface mounted on 1 in. square Cu board (still air). www.irf.com Mounted to a PCB with small clip heatsink (still air) Mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air) 3 IRF6645 100 100 BOTTOM 10 6.0V 1 TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 15V 10V 8.0V 7.0V 6.0V BOTTOM 10 6.0V 60s PULSE WIDTH 60s PULSE WIDTH Tj = 150C Tj = 25C 0.1 1 0.1 1 10 100 0.1 VDS , Drain-to-Source Voltage (V) 1 10 100 VDS , Drain-to-Source Voltage (V) Fig 4. Typical Output Characteristics Fig 5. Typical Output Characteristics 100 2.0 ID = 5.7A VDS = 10V 60s PULSE WIDTH 10 Typical RDS(on) (Normalized) ID, Drain-to-Source Current () VGS 15V 10V 8.0V 7.0V 6.0V TJ = 150C TJ = 25C TJ = -40C 1 VGS = 10V 1.5 1.0 0.1 4.0 5.0 6.0 7.0 0.5 8.0 -60 -40 -20 0 VGS, Gate-to-Source Voltage (V) Fig 6. Typical Transfer Characteristics 10000 60 VGS = 8.0V (m) DS(on) Coss Typical R C, Capacitance(pF) Ciss 100 TA= 25C VGS = 7.0V Coss = Cds + Cgd Crss 50 VGS = 10V VGS = 15V 40 30 20 10 1 10 100 VDS , Drain-to-Source Voltage (V) Fig 8. Typical Capacitance vs.Drain-to-Source Voltage 4 TJ , Junction Temperature (C) Fig 7. Normalized On-Resistance vs. Temperature VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd 1000 20 40 60 80 100 120 140 160 0 10 20 30 40 50 ID, Drain Current (A) Fig 9. Typical On-Resistance vs. Drain Current www.irf.com IRF6645 1000 TJ = 150C TJ = 25C ID, Drain-to-Source Current (A) ISD , Reverse Drain Current (A) 100.0 TJ = -40C 10.0 1.0 OPERATION IN THIS AREA LIMITED BY R DS (on) 100 100sec 10 1msec 1 TA = 25C Tj = 150C Single Pulse VGS = 0V 0.1 0.1 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.1 1.1 1.0 10.0 100.0 1000.0 VDS , Drain-toSource Voltage (V) VSD , Source-to-Drain Voltage (V) Fig11. Maximum Safe Operating Area Fig 10. Typical Source-Drain Diode Forward Voltage 6.0 VGS(th) Gate threshold Voltage (V) 6.0 5.0 ID , Drain Current (A) 10msec 4.0 3.0 2.0 1.0 5.5 5.0 4.5 4.0 3.5 ID = 1.0A ID = 1.0mA 3.0 ID = 50A ID = 250A 2.5 2.0 0.0 25 50 75 100 125 -75 150 -50 -25 0 25 50 75 100 125 150 TJ , Temperature ( C ) TJ , Ambient Temperature (C) Fig 13. Typical Threshold Voltage vs. Junction Temperature Fig 12. Maximum Drain Current vs. Ambient Temperature EAS, Single Pulse Avalanche Energy (mJ) 120 ID 1.5A 2.4A BOTTOM 3.4A TOP 100 80 60 40 20 0 25 50 75 100 125 150 Starting TJ, Junction Temperature (C) Fig 14. Maximum Avalanche Energy vs. Drain Current www.irf.com 5 IRF6645 Current Regulator Same Type as D.U.T. Id Vds 50K Vgs .2F 12V .3F D.U.T. + V - DS Vgs(th) VGS 3mA IG ID Qgs1 Qgs2 Current Sampling Resistors Fig 15a. Gate Charge Test Circuit Qgd Qgodr Fig 15b. Gate Charge Waveform V(BR)DSS 15V D.U.T RG VGS 20V DRIVER L VDS tp + V - DD IAS A I AS 0.01 tp Fig 16c. Unclamped Inductive Waveforms Fig 16b. Unclamped Inductive Test Circuit VDS RD VDS 90% VGS D.U.T. RG + - VDD 10V Pulse Width 1 s 10% VGS td(on) tr td(off) tf Duty Factor 0.1 % Fig 17a. Switching Time Test Circuit 6 Fig 17b. Switching Time Waveforms www.irf.com IRF6645 D.U.T Driver Gate Drive + + - * D.U.T. ISD Waveform Reverse Recovery Current + RG * * * * di/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test VDD P.W. Period VGS=10V Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer - D= Period P.W. + Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Current Inductor Curent - Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 18. Diode Reverse Recovery Test Circuit for N-Channel HEXFET(R) Power MOSFETs DirectFET Substrate and PCB Layout, SJ Outline (Small Size Can, J-Designation). Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs. D G D S S D D G = GATE D = DRAIN S = SOURCE www.irf.com 7 IRF6645 DirectFET Outline Dimension, SJ Outline (Small Size Can, J-Designation). Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs. DIMENSIONS METRIC MAX CODE MIN 4.85 A 4.75 3.95 B 3.70 2.85 C 2.75 0.45 D 0.35 0.62 E 0.58 0.62 F 0.58 0.72 G 0.68 0.72 H 0.68 K 0.98 1.02 2.32 L 2.28 0.58 M 0.48 0.08 N 0.03 0.17 P 0.08 IMPERIAL MIN 0.187 0.146 0.108 0.014 0.023 0.023 0.027 0.027 0.039 0.090 0.019 0.001 0.003 MAX 0.191 0.156 0.112 0.018 0.024 0.024 0.028 0.028 0.040 0.091 0.023 0.003 0.007 DirectFET Part Marking 8 www.irf.com IRF6645 DirectFET Tape & Reel Dimension (Showing component orientation). NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6645). For 1000 parts on 7" reel, order IRF6645TR1 REEL DIMENSIONS STANDARD OPTION (QTY 4800) TR1 OPTION (QTY 1000) IMPERIAL IMPERIAL METRIC METRIC MAX MIN MIN CODE MIN MIN MAX MAX MAX N.C 6.9 12.992 A 330.0 177.77 N.C N.C N.C 0.75 B 0.795 N.C 20.2 19.06 N.C N.C N.C 0.53 C 0.504 0.50 12.8 13.5 0.520 12.8 13.2 0.059 D 0.059 1.5 1.5 N.C N.C N.C N.C 2.31 E 3.937 100.0 58.72 N.C N.C N.C N.C F N.C N.C 0.53 N.C N.C 0.724 13.50 18.4 G 0.47 0.488 12.4 11.9 N.C 0.567 12.01 14.4 H 0.47 0.469 11.9 11.9 N.C 0.606 12.01 15.4 NOTE: CONTROLLING DIMENSIONS IN MM DIMENSIONS METRIC MIN MAX 7.90 8.10 3.90 4.10 11.90 12.30 5.45 5.55 4.00 4.20 5.00 5.20 1.50 N.C 1.50 1.60 IMPERIAL MAX 0.319 0.161 0.484 0.219 0.165 0.205 N.C 0.063 Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.08/05 www.irf.com 9 Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/