1.9
0.950.951.0
2. 4
1. 3
2.9
0.4
JI ANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Diodes
BAS21/A/C/SLT1 SWITCHING DIODE
FEATURES
Power dissipation
PD: 225 mW (Tamb=25℃)
Forward Current
IF: 200 m A
Reverse Voltage
VR: 250 V
Operating and storage junction temperature range
TJ, T stg: -55℃ to +150℃
BAS21LT1 BAS21ALT1 BAS21CLT1 BAS21SLT1
Marking: JS Marking: JS2 Marking: JS3 Marking: JS4
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN MAX UNIT
Reverse breakdown voltage V(BR) IR= 100µA 250 V
Reverse voltage leakage current IR V
R=200V 1
µA
Forward voltage VF IF=100mA
IF=200mA 1000
1250 mV
Diode capacitance CD V
R=0V, f=1MHz 5 pF
Reverse recover y time t r r 50
nS
Unit: mm
SOT -23
