TDA8922BTH/N2,118-CUT TAPE\"\" - NXP SEMICONDUCTORS

1. General description

The TDA8922B is a high efﬁciency class-D audio power ampliﬁer with very low

dissipation. The typical output power is 2 ×50 W.

The device is available in the HSOP24 power package and in the DBS23P through-hole

power package. The ampliﬁer operates over a wide supply voltage range from ±12.5 V

to ±30 V and consumes a very low quiescent current.

2. Features

■Zero dead time switching

■Advanced current protection: output current limiting

■Smooth start-up: no pop-noise due to DC offset

■High efﬁciency

■Operating supply voltage from ±12.5 V to ±30 V

■Low quiescent current

■Usable as a stereo Single-Ended (SE) ampliﬁer or as a mono ampliﬁer in Bridge-Tied

Load (BTL)

■Fixed gain of 30 dB in Single-Ended (SE) and 36 dB in Bridge-Tied Load (BTL)

■High supply voltage ripple rejection

■Internal switching frequency can be overruled by an external clock

■Full short-circuit proof across load and to supply lines

■Thermally protected.

3. Applications

■Television sets

■Home-sound sets

■Multimedia systems

■All mains fed audio systems

■Car audio (boosters).

TDA8922B

2× 50 W class-D power ampliﬁer

Rev. 01 — 1 October 2004 Preliminary data sheet

Preliminary data sheet Rev. 01 — 1 October 2004 2 of 32

Philips Semiconductors TDA8922B

2× 50 W class-D power ampliﬁer

4. Quick reference data

5. Ordering information

Table 1: Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

General; VP=±26 V

VPsupply voltage ±12.5 ±26 ±30 V

Iq(tot) total quiescent

supply current no load; no ﬁlter; no

RC-snubber network

connected

- 5065mA

Stereo single-ended conﬁguration

Pooutput power RL=6Ω; THD = 10 %;

VP=±26 V -50-W

RL=8Ω; THD = 10 %;

VP=±21 V -25-W

Mono bridge-tied load conﬁguration

Pooutput power RL=8Ω; THD = 10 %;

VP=±21 V -88-W

Table 2: Ordering information

Type number Package

Name Description Version

TDA8922BTH HSOP24 plastic; heatsink small outline package; 24 leads; low

stand-off height SOT566-3

TDA8922BJ DBS23P plastic DIL-bent-SIL power package; 23 leads

(straight lead length 3.2 mm) SOT411-1

Preliminary data sheet Rev. 01 — 1 October 2004 3 of 32

Philips Semiconductors TDA8922B

2× 50 W class-D power ampliﬁer

6. Block diagram

(1) Pin numbers in parenthesis refer to the TDA8922BJ.

Fig 1. Block diagram.

coa022

OUT1

VSSP1

VDDP2

DRIVER

HIGH

OUT2

BOOT2

TDA8922BTH

(TDA8922BJ)

BOOT1

DRIVER

LOW

RELEASE1

SWITCH1

ENABLE1

CONTROL

AND

HANDSHAKE

PWM

MODULATOR

MANAGER

OSCILLATOR TEMPERATURE SENSOR

CURRENT PROTECTION

VOLTAGE PROTECTION

STABI

MODE

INPUT

STAGE

mute

9 (3)

8 (2)

IN1M

IN1P

22 (15)

21 (14)

20 (13)

17 (11)

16 (10)

15 (9)

VSSP2

VSSP1

DRIVER

HIGH

DRIVER

LOW

RELEASE2

SWITCH2

ENABLE2 CONTROL

AND

HANDSHAKE

PWM

MODULATOR

11 (5)

SGND1

7 (1)

OSC

2 (19)

SGND2

6 (23)

MODE

INPUT

STAGE

mute

5 (22)

4 (21)

IN2M

IN2P

19 (-)24 (17)

VSSD n.c.

1 (18)

VSSA2

12 (6)

VSSA1

3 (20)

VDDA2

10 (4)

VDDA1

23 (16)13 (7)18 (12) 14 (8)

VDDP2

PROTSTABI VDDP1

Preliminary data sheet Rev. 01 — 1 October 2004 4 of 32

Philips Semiconductors TDA8922B

2× 50 W class-D power ampliﬁer

7. Pinning information

7.1 Pinning

7.2 Pin description

Fig 2. Pin conﬁguration TDA8922BTH. Fig 3. Pin conﬁguration TDA8922BJ.

TDA8922BTH

VSSD VSSA2

VDDP2 SGND2

BOOT2 VDDA2

OUT2 IN2M

VSSP2 IN2P

n.c. MODE

STABI OSC

VSSP1 IN1P

OUT1 IN1M

BOOT1 VDDA1

VDDP1 SGND1

PROT VSSA1

001aab170

TDA8922BJ

OSC

IN1P

IN1M

VDDA1

SGND1

VSSA1

PROT

VDDP1

BOOT1

OUT1

VSSP1

STABI

VSSP2

OUT2

BOOT2

VDDP2

VSSD

VSSA2

SGND2

VDDA2

IN2M

IN2P

MODE

001aab171

Table 3: Pin description

Symbol Pin Description

TDA8922BTH TDA8922BJ

VSSA2 1 18 negative analog supply voltage for channel 2

SGND2 2 19 signal ground for channel 2

VDDA2 3 20 positive analog supply voltage for channel 2

IN2M 4 21 negative audio input for channel 2

IN2P 5 22 positive audio input for channel 2

MODE 6 23 mode selection input: Standby; Mute or

Operating mode

OSC 7 1 oscillator frequency adjustment or tracking input

IN1P 8 2 positive audio input for channel 1

IN1M 9 3 negative audio input for channel 1

VDDA1 10 4 positive analog supply voltage for channel 1

Preliminary data sheet Rev. 01 — 1 October 2004 5 of 32

Philips Semiconductors TDA8922B

2× 50 W class-D power ampliﬁer

8. Functional description

8.1 General

The TDA8922B is a two channel audio power ampliﬁer using class-D technology.

The audio input signal is converted into a digital Pulse Width Modulated (PWM) signal via

an analog input stage and PWM modulator. To enable the output power transistors to be

driven, this digital PWM signal is applied to a control and handshake block and driver

circuits for both the high side and low side. In this way a level shift is performed from the

low power digital PWM signal (at logic levels) to a high power PWM signal which switches

between the main supply lines.

A 2nd-order low-pass ﬁlter converts the PWM signal to an analog audio signal across the

loudspeakers.

The TDA8922B one-chip class-D ampliﬁer contains high power D-MOS switches, drivers,

timing and handshaking between the power switches and some control logic. For

protection a temperature sensor and a maximum current detector are built-in.

The two audio channels of the TDA8922B contain two PWMs, two analog feedback loops

and two differential input stages. It also contains circuits common to both channels such

as the oscillator, all reference sources, the mode functionality and a digital timing

manager.

The TDA8922B contains two independent ampliﬁer channels with high output power, high

efﬁciency, low distortion and a low quiescent current. The ampliﬁer channels can be

connected in the following conﬁgurations:

•Mono Bridge-Tied Load (BTL) ampliﬁer

•Stereo Single-Ended (SE) ampliﬁers.

SGND1 11 5 signal ground for channel 1

VSSA1 12 6 negative analog supply voltage for channel 1

PROT 13 7 decoupling capacitor for protection (OCP)

VDDP1 14 8 positive power supply voltage for channel 1

BOOT1 15 9 bootstrap capacitor for channel 1

OUT1 16 10 PWM output from channel 1

VSSP1 17 11 negative power supply voltage for channel 1

STABI 18 12 decoupling of internal stabilizer for logic supply

n.c. 19 - not connected

VSSP2 20 13 negative power supply voltage for channel 2

OUT2 21 14 PWM output from channel 2

BOOT2 22 15 bootstrap capacitor for channel 2

VDDP2 23 16 positive power supply voltage for channel 2

VSSD 24 17 negative digital supply voltage

Table 3: Pin description

…continued

Symbol Pin Description

TDA8922BTH TDA8922BJ

Preliminary data sheet Rev. 01 — 1 October 2004 6 of 32

Philips Semiconductors TDA8922B

2× 50 W class-D power ampliﬁer

The ampliﬁer system can be switched in three operating modes with pin MODE:

•Standby mode; with a very low supply current

•Mute mode; the ampliﬁers are operational; but the audio signal at the output is

suppressed by disabling the VI-converter input stages

•Operating mode; the ampliﬁers fully are operational with output signal.

To ensure pop-noise free start-up the DC output offset voltage is applied gradually to the

output between Mute mode and Operating mode. The bias current setting of the VI

converters is related to the voltage on the MODE pin; in Mute mode the bias current

setting of the VI converters is zero (VI converters disabled) and in Operating mode the

bias current is at maximum. The time constant required to apply the DC output offset

voltage gradually between mute and operating can be generated via an RC-network on

the MODE pin. An example of a switching circuit for driving pin MODE is illustrated in

Figure 4. If the capacitor C is left out of the application the voltage on the MODE pin will

be applied with a much smaller time-constant, which might result in audible pop-noises

during start-up (depending on DC output offset voltage and used loudspeaker).

In order to fully charge the coupling capacitors at the inputs, the ampliﬁer will remain

automatically in the Mute mode before switching to the Operating mode. A complete

overview of the start-up timing is given in Figure 5.

Fig 4. Example of mode selection circuit.

001aab172

SGND

MODE pin

mute/on

+5 V

standby/

mute

Preliminary data sheet Rev. 01 — 1 October 2004 7 of 32

Philips Semiconductors TDA8922B

2× 50 W class-D power ampliﬁer

When switching from standby to mute, there is a delay of 100 ms before the output starts

switching. The audio signal is available after Vmode has been set to operating, but not earlier

than 150 ms after switching to mute. For pop-noise free start-up it is recommended that the

time constant applied to the MODE pin is at least 350 ms for the transition between mute and

operating.

When switching directly from standby to operating, there is a ﬁrst delay of 100 ms before the

outputs starts switching. The audio signal is available after a second delay of 50 ms. For

pop-noise free start-up it is recommended that the time constant applied to the MODE pin is at

least 350 ms for the transition between standby and operating

Fig 5. Timing on mode selection input.

2.2 V < Vmode < 3 V

audio output

operating

standby

mute

50 %

duty cycle

> 4.2 V

0 V (SGND) time

coa024

Vmode

100 ms 50 ms

modulated PWM

> 350 ms

2.2 V < Vmode < 3 V

audio output

operating

standby

mute

50 %

duty cycle

> 4.2 V

0 V (SGND) time

Vmode

100 ms 50 ms

modulated PWM

> 350 ms

Preliminary data sheet Rev. 01 — 1 October 2004 8 of 32

Philips Semiconductors TDA8922B

2× 50 W class-D power ampliﬁer

8.2 Pulse width modulation frequency

The output signal of the ampliﬁer is a PWM signal with a carrier frequency of

approximately 317 kHz. Using a 2nd-order LC demodulation ﬁlter in the application results

in an analog audio signal across the loudspeaker. This switching frequency is ﬁxed by an

external resistor ROSC connected between pin OSC and VSSA. An optimal setting for the

carrier frequency is between 300 kHz and 350 kHz.

Using an external resistor of 30 kΩ on the OSC pin, the carrier frequency is set to

317 kHz.

If two or more class-D ampliﬁers are used in the same audio application, it is advisable to

have all devices operating at the same switching frequency by using an external clock

circuit.

8.3 Protections

The following protections are included in TDA8922B:

•OverTemperature Protection (OTP)

•OverCurrent Protection (OCP)

•Window Protection (WP)

•Supply voltage protections:

–UnderVoltage Protection (UVP)

–OverVoltage Protection (OVP)

–UnBalance Protection (UBP).

The reaction of the device on the different fault conditions differs per protection:

8.3.1 OverTemperature Protection (OTP)

If the junction temperature Tj> 150 °C, then the power stage will shut-down immediately.

The power stage will start switching again if the temperature drops to approximately

130 °C, thus there is a hysteresis of approximately 20 °C.

8.3.2 OverCurrent Protection (OCP)

When the loudspeaker terminals are short-circuited or if one of the demodulated outputs

of the ampliﬁer is short-circuited to one of the supply lines, this will be detected by the

OverCurrent Protection (OCP). If the output current exceeds the maximum output current

of 5 A, this current will be limited by the ampliﬁer to 5 A while the ampliﬁer outputs remain

switching (the ampliﬁer is NOT shut-down completely).

The ampliﬁer can distinguish between an impedance drop of the loudspeaker and

low-ohmic short across the load. In the TDA8922B this impedance threshold (Zth)

depends on the supply voltage used.

When a short is made across the load causing the impedance to drop below the threshold

level (< Zth) then the ampliﬁer is switched off completely and after a time of 100 ms it will

try to restart again. If the short circuit condition is still present after this time this cycle will

be repeated. The average dissipation will be low because of this low duty cycle.

Preliminary data sheet Rev. 01 — 1 October 2004 9 of 32

Philips Semiconductors TDA8922B

2× 50 W class-D power ampliﬁer

In case of an impedance drop (e.g. due to dynamic behavior of the loudspeaker) the same

protection will be activated; the maximum output current is again limited to 5 A, but the

ampliﬁer will NOT switch-off completely (thus preventing audio holes from occurring).

Result will be a clipping output signal without any artefacts.

See also Section 13.6 for more information on this maximum output current limiting

feature.

8.3.3 Window Protection (WP)

During the start-up sequence, when pin MODE is switched from standby to mute, the

conditions at the output terminals of the power stage are checked. In the event of a

short-circuit at one of the output terminals to VDD or VSS the start-up procedure is

interrupted and the system waits for open-circuit outputs. Because the test is done before

enabling the power stages, no large currents will ﬂow in the event of a short-circuit. This

system is called Window Protection (WP) and protects for short-circuits at both sides of

the output ﬁlter to both supply lines. When there is a short-circuit from the power PWM

output of the power stage to one of the supply lines (before the demodulation ﬁlter) it will

also be detected by the start-up safety test. Practical use of this test feature can be found

in detection of short-circuits on the printed-circuit board.

Remark: This test is operational during (every) start-up sequence at a transition between

Standby and Mute mode. However when the ampliﬁer is completely shut-down due to

activation of the OverCurrent Protection (OCP) because a short to one of the supply lines

is made, then during restart (after 100 ms) the window protection will be activated. As a

result the ampliﬁer will not start-up until the short to the supply lines is removed.

8.3.4 Supply voltage protections

If the supply voltage drops below ±12.5 V, the UnderVoltage Protection (UVP) circuit is

activated and the system will shut-down correctly. If the internal clock is used, this

switch-off will be silent and without pop noise. When the supply voltage rises above the

threshold level, the system is restarted again after 100 ms. If the supply voltage exceeds

±33 V the OverVoltage Protection (OVP) circuit is activated and the power stages will

shut-down. It is re-enabled as soon as the supply voltage drops below the threshold level.

So in this case no timer of 100 ms is started.

An additional UnBalance Protection (UBP) circuit compares the positive analog (VDDA)

and the negative analog (VSSA) supply voltages and is triggered if the voltage difference

between them exceeds a certain level. This level depends on the sum of both supply

voltages. An expression for the unbalanced threshold level is as follows:

Vth(ub) ≈0.15 ×(VDDA +V

SSA).

When the supply voltage difference drops below the threshold level, the system is

restarted again after 100 ms.

Example: With a symmetrical supply of ±30 V, the protection circuit will be triggered if the

unbalance exceeds approximately 9 V; see also Section 13.7.

In Table 4 an overview is given of all protections and the effect on the output signal.

Preliminary data sheet Rev. 01 — 1 October 2004 10 of 32

Philips Semiconductors TDA8922B

2× 50 W class-D power ampliﬁer

[1] Hysteresis of 20 degrees will inﬂuence restart timing depending on heatsink size.

[2] Only complete shut-down of ampliﬁer if short-circuit impedance is below threshold of 1 Ω. In all other cases

current limiting: resulting in clipping output signal.

[3] Fault condition detected during (every) transition between standby-to-mute and during restart after

activation of OCP (short to one of the supply lines).

8.4 Differential audio inputs

For a high common mode rejection ratio and a maximum of ﬂexibility in the application, the

audio inputs are fully differential. By connecting the inputs anti-parallel the phase of one of

the channels can be inverted, so that a load can be connected between the two output

ﬁlters. In this case the system operates as a mono BTL ampliﬁer and with the same

loudspeaker impedance an approximately four times higher output power can be

obtained.

The input conﬁguration for a mono BTL application is illustrated in Figure 6.

In the stereo single-ended conﬁguration it is also recommended to connect the two

differential inputs in anti-phase. This has advantages for the current handling of the power

supply at low signal frequencies.

Table 4: Overview protections TDA8922B

Protection name Complete shut-down Restart directly Restart every 100 ms

OTP Y Y [1] N[1]

OCP N[2] Y[2] N[2]

WP Y[3] YN

UVP Y N Y

OVPYYN

UBP Y N Y

Fig 6. Input conﬁguration for mono BTL application.

Vin

IN1P OUT1

power stage

mbl466

OUT2

SGND

IN1M

IN2P

IN2M

Preliminary data sheet Rev. 01 — 1 October 2004 11 of 32

Philips Semiconductors TDA8922B

2× 50 W class-D power ampliﬁer

9. Limiting values

[1] Current limiting concept. See also Section 13.6.

10. Thermal characteristics

[1] See also Section 13.5.

11. Static characteristics

Table 5: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VPsupply voltage - ±30 V

IORM repetitive peak current in

output pin maximum output

current limiting [1] 5- A

Tstg storage temperature −55 +150 °C

Tamb ambient temperature −40 +85 °C

Tjjunction temperature - 150 °C

Table 6: Thermal characteristics

Symbol Parameter Conditions Typ Unit

Rth(j-a) thermal resistance from junction to ambient [1]

TDA8922BTH in free air 35 K/W

TDA8922BJ in free air 35 K/W

Rth(j-c) thermal resistance from junction to case [1]

TDA8922BTH 1.3 K/W

TDA8922BJ 1.3 K/W

Table 7: Static characteristics

26 V; f

osc

= 317 kHz; T

amb

= 25

C; unless otherwise speciﬁed.

Symbol Parameter Conditions Min Typ Max Unit

Supply

VPsupply voltage [1] ±12.5 ±26 ±30 V

Iq(tot) total quiescent supply

current no load; no ﬁlter; no

snubber network

connected

- 5065mA

Istb standby supply current - 150 500 µA

Mode select input; pin MODE

VIinput voltage [2] 0-6V

IIinput current VI= 5.5 V - 100 300 µA

Vstb input voltage for

Standby mode [2]

[3] 0 - 0.8 V

Vmute input voltage for Mute

mode [2]

[3] 2.2 - 3.0 V

Von input voltage for

Operating mode [2]

[3] 4.2 - 6 V

Preliminary data sheet Rev. 01 — 1 October 2004 12 of 32

Philips Semiconductors TDA8922B

2× 50 W class-D power ampliﬁer

[1] The circuit is DC adjusted at VP=±12.5 V to ±30 V.

[2] With respect to SGND (0 V).

[3] The transition between Standby and Mute mode contain hysteresis, while the slope of the transition

between Mute and Operating mode is determined by the time-constant on the MODE pin see Figure 7.

[4] DC output offset voltage is applied to the output during the transition between Mute and Operating mode in

a gradual way.The slope of the dV/dt caused by any DC output offset is determined by the time-constant on

the MODE pin.

Audio inputs; pins IN1M, IN1P, IN2P and IN2M

VIDC input voltage [2] -0-V

Ampliﬁer outputs; pins OUT1 and OUT2

VOO(SE)(mute)mute SE output offset

voltage - - 15 mV

VOO(SE)(on)operating SE output

offset voltage [4] - - 150 mV

VOO(BTL)(mute)muteBTL outputoffset

voltage - - 21 mV

VOO(BTL)(on)operating BTL output

offset voltage [4] - - 210 mV

Stabilizer output; pin STABI

Vo(stab) stabilizer output

voltage mute and operating;

with respect to VSSP1

11 12.5 15 V

Temperature protection

Tprot temperatureprotection

activation - 150 - °C

Thys hysteresis on

temperature protection -20-°C

Fig 7. Behavior of mode selection pin MODE.

Table 7: Static characteristics

…continued

26 V; f

osc

= 317 kHz; T

amb

= 25

C; unless otherwise speciﬁed.

Symbol Parameter Conditions Min Typ Max Unit

STBY MUTE ON

5.5

coa021

VMODE (V)

4.23.02.20.80

VO (V)

Voo (mute)

Voo (on)

slope is directly related to

time-constant on the MODE pin

Preliminary data sheet Rev. 01 — 1 October 2004 13 of 32

Philips Semiconductors TDA8922B

2× 50 W class-D power ampliﬁer

12. Dynamic characteristics

12.1 Switching characteristics

12.2 Stereo and dual SE application

Table 8: Switching characteristics

26 V; T

amb

= 25

C; unless otherwise speciﬁed.

Symbol Parameter Conditions Min Typ Max Unit

Internal oscillator

fosc typical internal oscillator

frequency ROSC = 30.0 kΩ290 317 344 kHz

fosc(int) internal oscillator

frequency range 210 - 600 kHz

External oscillator or frequency tracking

VOSC high-level voltage on pin

OSC SGND + 4.5 SGND + 5 SGND + 6 V

VOSC(trip) trip level for tracking on

pin OSC - SGND + 2.5 - V

ftrack frequency range for

tracking 210 - 600 kHz

Table 9: Stereo and dual SE application characteristics

26 V; R

= 6

Ω

; f

= 1 kHz; R

< 0.1

Ω

[1]

; T

amb

= 25

C; unless otherwise speciﬁed.

Symbol Parameter Conditions Min Typ Max Unit

Pooutput power RL=4Ω; VP=±21 V [2]

THD = 0.5 % - 32 - W

THD = 10 % - 40 - W

RL=6Ω; VP=±26 V [2]

THD = 0.5 % - 40 - W

THD = 10 % - 50 - W

RL=8Ω; VP=±21 V [2]

THD = 0.5 % - 20 - W

THD = 10 % - 25 - W

RL=8Ω; VP=±26 V [2]

THD = 0.5 % - 32 - W

THD = 10 % - 40 - W

THD total harmonic distortion Po=1W [3]

fi= 1 kHz - 0.02 0.05 %

fi= 6 kHz - 0.07 - %

Gv(cl) closed loop voltage gain 29 30 31 dB

SVRR supply voltage ripple

rejection operating [4]

fi= 100 Hz - 55 - dB

fi= 1 kHz 40 50 - dB

mute; fi= 100 Hz [4] -55-dB

standby; fi= 100 Hz [4] -80-dB

Preliminary data sheet Rev. 01 — 1 October 2004 14 of 32

Philips Semiconductors TDA8922B

2× 50 W class-D power ampliﬁer

[1] RsL is the series resistance of inductor of low-pass LC ﬁlter in the application.

[2] Output power is measured indirectly; based on RDSon measurement. See also Section 13.3.

[3] Total harmonic distortion is measured in a bandwidth of 22 Hz to 20 kHz, using an AES17 20 kHz brickwall ﬁlter. Maximum limit is

guaranteed but may not be 100 % tested.

[4] Vripple =V

ripple(max) = 2 V (p-p); Rs=0Ω.

[5] B = 22 Hz to 20 kHz, using an AES17 20 kHz brickwall ﬁlter.

[6] B = 22 Hz to 20 kHz, using an AES17 20 kHz brickwall ﬁlter; independent of Rs.

[7] Po= 1 W; Rs=0Ω; fi= 1 kHz.

[8] Vi=V

i(max) = 1 V (RMS); fi= 1 kHz.

12.3 Mono BTL application

Ziinput impedance 45 68 - kΩ

Vn(o) noise output voltage operating

Rs=0Ω[5] - 210 - µV

mute [6] - 160 - µV

αcs channel separation [7] -70-dB

∆Gvchannel unbalance - - 1 dB

Vo(mute) output signal in mute [8] - 100 - µV

CMRR common mode rejection

ratio Vi(CM) = 1 V (RMS) - 75 - dB

Table 9: Stereo and dual SE application characteristics

…continued

26 V; R

= 6

Ω

; f

= 1 kHz; R

< 0.1

Ω

[1]

; T

amb

= 25

C; unless otherwise speciﬁed.

Symbol Parameter Conditions Min Typ Max Unit

Table 10: Mono BTL application characteristics

26 V; R

= 8

Ω

; f

= 1 kHz; f

osc

= 317 kHz; R

< 0.1

Ω

[1]

; T

amb

= 25

C; unless otherwise speciﬁed.

Symbol Parameter Conditions Min Typ Max Unit

Pooutput power RL=6Ω; VP=±16 V [2]

THD = 0.5 % - 48 - W

THD = 10 % - 60 - W

RL=8Ω; VP=±21 V [2]

THD = 0.5 % - 71 - W

THD = 10 % - 88 - W

THD total harmonic distortion Po=1W [3]

fi= 1 kHz - 0.02 0.05 %

fi= 6 kHz - 0.07 - %

Gv(cl) closed loop voltage gain 35 36 37 dB

SVRR supply voltage ripple

rejection operating [4]

fi= 100 Hz - 80 - dB

fi= 1 kHz 70 80 - dB

mute; fi= 100 Hz [4] -80-dB

standby; fi= 100 Hz [4] -80-dB

Ziinput impedance 22 34 - kΩ

Preliminary data sheet Rev. 01 — 1 October 2004 15 of 32

Philips Semiconductors TDA8922B

2× 50 W class-D power ampliﬁer

[1] RsL is the series resistance of inductor of low-pass LC ﬁlter in the application.

[2] Output power is measured indirectly; based on RDSon measurement. See also Section 13.3.

[3] Total harmonic distortion is measured in a bandwidth of 22 Hz to 20 kHz, using an AES17 20 kHz brickwall ﬁlter. Maximum limit is

guaranteed but may not be 100 % tested.

[4] Vripple =V

ripple(max) = 2 V (p-p); Rs=0Ω.

[5] B = 22 Hz to 20 kHz, using an AES17 20 kHz brickwall ﬁlter.

[6] B = 22 Hz to 20 kHz, using an AES17 20 kHz brickwall ﬁlter; independent of Rs.

[7] Vi=V

i(max) = 1 V (RMS); fi= 1 kHz.

13. Application information

13.1 BTL application

When using the power ampliﬁer in a mono BTL application the inputs of both channels

must be connected in parallel and the phase of one of the inputs must be inverted (see

Figure 6). In principle the loudspeaker can be connected between the outputs of the two

single-ended demodulation ﬁlters.

13.2 MODE pin

For pop-noise free start-up an RC time-constant must be applied on the MODE pin. The

bias-current setting of the VI-converter input is directly related to the voltage on the MODE

pin. In turn the bias-current setting of the VI converters is directly related to the DC output

offset voltage. Thus a slow dV/dt on the MODE pin results in a slow dV/dt for the DC

output offset voltage, resulting in pop-noise free start-up. A time-constant of 500 ms is

sufﬁcient to guarantee pop-noise free start-up (see also Figure 4,5 and 7).

13.3 Output power estimation

The achievable output powers in several applications (SE and BTL) can be estimated

using the following expressions:

SE:

(1)

Vn(o) noise output voltage operating

Rs=0Ω[5] - 300 - µV

mute [6] - 220 - µV

Vo(mute) output signal in mute [7] - 200 - µV

CMRR common mode rejection

ratio Vi(CM) = 1 V (RMS) - 75 - dB

Table 10: Mono BTL application characteristics

…continued

26 V; R

= 8

Ω

; f

= 1 kHz; f

osc

= 317 kHz; R

< 0.1

Ω

[1]

; T

amb

= 25

C; unless otherwise speciﬁed.

Symbol Parameter Conditions Min Typ Max Unit

Po1%()

RL0.6+

-------------------- VP1t

min fosc

×–()×× 2

-----------------------------------------------------------------------------------------

Preliminary data sheet Rev. 01 — 1 October 2004 16 of 32

Philips Semiconductors TDA8922B

2× 50 W class-D power ampliﬁer

Maximum current (internally limited to 5 A):

(2)

BTL:

(3)

Maximum current (internally limited to 5 A):

(4)

Variables:

RL= load impedance

fosc = oscillator frequency

tmin = minimum pulse width (typical 150 ns).

VP= single-sided supply voltage (so, if supply is ±30 V symmetrical, then VP=30V)

Po(1%) = output power just at clipping

Po(10%) = output power at THD = 10 %

Po(10%) = 1.24 ×Po(1%).

13.4 External clock

When using an external clock the following accuracy of the duty cycle of the external clock

has to be taken into account: 47.5 % < δ< 52.5 %.

If two or more class-D ampliﬁers are used in the same audio application, it is strongly

recommended that all devices run at the same switching frequency.This can be realized

by connecting all OSC pins together and feed them from an external central oscillator.

Using an external oscillator it is necessary to force pin OSC to a DC-level above SGND for

switching from the internal to an external oscillator. In this case the internal oscillator is

disabled and the PWM will be switched on the external frequency. The frequency range of

the external oscillator must be in the range as speciﬁed in the switching characteristics;

see Section 12.1.

In an application circuit:

•Internal oscillator: ROSC connected between pin OSC and VSSA

•External oscillator: connect the oscillator signal between pins OSC and SGND; delete

ROSC and COSC.

Iopeak()

VP1t

min fosc

×–()×RL0.6+

------------------------------------------------------

Po1%()

RL1.2+

-------------------- 2VP1t

min fosc

×–()×× 2

---------------------------------------------------------------------------------------------

Iopeak()

2VP1t

min fosc

×–()×RL1.2+

---------------------------------------------------------

Preliminary data sheet Rev. 01 — 1 October 2004 17 of 32

Philips Semiconductors TDA8922B

2× 50 W class-D power ampliﬁer

13.5 Heatsink requirements

In some applications it may be necessary to connect an external heatsink to the

TDA8922B. Limiting factor is the 150 °C maximum junction temperature Tj(max) which

cannot be exceeded. The expression below shows the relationship between the maximum

allowable power dissipation and the total thermal resistance from junction to ambient:

Pdiss is determined by the efﬁciency (η) of the TDA8922B. The efﬁciency measured in the

TDA8922B as a function of output power is given in Figure 19. The power dissipation can

be derived as function of output power Figure 18.

The derating curves (given for several values of the Rth(j-a)) are illustrated in Figure 8. A

maximum junction temperature Tj= 150 °C is taken into account. From Figure 8 the

maximum allowable power dissipation for a given heatsink size can be derived or the

required heatsink size can be determined at a required dissipation level.

13.6 Output current limiting

To guarantee the robustness of the class-D ampliﬁer the maximum output current which

can be delivered by the output stage is limited. An advanced OverCurrent Protection

(OCP) is included for each output power switch.

When the current ﬂowing through any of the power switches exceeds the deﬁned internal

threshold of 5 A (e.g. in case of a short-circuit to the supply lines or a short-circuit across

the load) the maximum output current of the ampliﬁer will be regulated to 5 A.

(1) Rth(j-a) = 5 K/W.

(2) Rth(j-a) = 10 K/W.

(3) Rth(j-a) = 15 K/W.

(4) Rth(j-a) = 20 K/W.

(5) Rth(j-a) = 35 K/W.

Fig 8. Derating curves for power dissipation as a function of maximum ambient

temperature.

Rth j a–()Tj max()

Tamb

–

Pdiss

--------------------------------------

Pdiss

(W)

Tamb (°C)

(1)

(2)

(3)

(4)

(5)

0 20 10040 60 80

mbl469

Preliminary data sheet Rev. 01 — 1 October 2004 18 of 32

Philips Semiconductors TDA8922B

2× 50 W class-D power ampliﬁer

The TDA8922B ampliﬁer can distinguish between a low-ohmic short circuit condition and

other overcurrent conditions like dynamic impedance drops of the used loudspeakers. The

impedance threshold (Zth) depends on the supply voltage used.

Depending on the impedance of the short circuit the ampliﬁer will react as follows:

1. Short-circuit impedance > Zth:

The maximum output current of the ampliﬁer is regulated to 5 A, but the ampliﬁer will

not shut-down its PWM outputs. Effectively this results in a clipping output signal

across the load (behavior is very similar to voltage clipping).

2. Short-circuit impedance < Zth:

The ampliﬁer will limit the maximum output current to 5 A and at the same time the

capacitor on the PROT pin is discharged. When the voltage across this capacitor

drops below an internal threshold voltage the ampliﬁer will shut-down completely and

an internal timer will be started.

A typical value for the capacitor on the PROT pin is 220 pF. After a ﬁxed time of

100 ms the ampliﬁer is switched on again. If the requested output current is still too

high the ampliﬁer will switch-off again. Thus the ampliﬁer will try to switch to the

Operating mode every 100 ms. The average dissipation will be low in this situation

because of this low duty cycle. If the overcurrent condition is removed the ampliﬁer will

remain in Operating mode once restarted.

In this way the TDA8922B ampliﬁer is fully robust against short circuit conditions while at

the same time so-called audio holes as a result of loudspeaker impedance drops are

eliminated.

13.7 Pumping effects

In a typical stereo half-bridge (Single-Ended (SE)) application the TDA8922B class-D

ampliﬁer is supplied by a symmetrical voltage (e.g VDD = +26 V and VSS =−26 V). When

the ampliﬁer is used in a SE conﬁguration, a so-called ‘pumping effect’ can occur. During

one switching interval, energy is taken from one supply (e.g. VDD), while a part of that

energy is delivered back to the other supply line (e.g. VSS) and visa versa. When the

voltage supply source cannot sink energy, the voltage across the output capacitors of that

voltage supply source will increase: the supply voltage is pumped to higher levels. The

voltage increase caused by the pumping effect depends on:

•Speaker impedance

•Supply voltage

•Audio signal frequency

•Value of decoupling capacitors on supply lines

•Source and sink currents of other channels.

The pumping effect should not cause a malfunction of either the audio ampliﬁer and/or the

voltage supply source. For instance, this malfunction can be caused by triggering of the

undervoltage or overvoltage protection or unbalance protection of the ampliﬁer.

Best remedy for pumping effects is to use the TDA8922B in a mono full-bridge application

or in case of stereo half-bridge application adapt the power supply (e.g. increase supply

decoupling capacitors).

Preliminary data sheet Rev. 01 — 1 October 2004 19 of 32

Philips Semiconductors TDA8922B

2× 50 W class-D power ampliﬁer

13.8 Application schematic

Notes to the application schematic:

•A solid ground plane around the switching ampliﬁer is necessary to prevent emission.

•100 nF capacitors must be placed as close as possible to the power supply pins of the

TDA8922BTH.

•The internal heat spreader of the TDA8922BTH is internally connected to VSS.

•The external heatsink must be connected to the ground plane.

•Use a thermal conductive electrically non-conductive Sil-Pad® between the backside

of the TDA8922BTH and a small external heatsink.

•The differential inputs enable the best system level audio performance with

unbalanced signal sources. In case of hum due to ﬂoating inputs, connect the

shielding or source ground to the ampliﬁer ground. Jumpers J1 and J2 are open on

set level and are closed on the stand-alone demo board.

•Minimum total required capacity per power supply line is 3300 µF.

xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx x x x xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xx xx

xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxx x x

xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxx

xxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxx xxx

Preliminary data sheet Rev. 01 — 1 October 2004 20 of 32

Philips Semiconductors TDA8922B

2× 50 W class-D power ampliﬁer

Fig 9. TDA8922BTH application diagram.

001aab198

C18 IN1P

IN1

IN2

IN1M

SGND1

FB GND SGND2

C19

220 pF

C23

1 nF

C17

1 nF

C30

1 nF

C25

1 nF

470 nF5.6 kΩ

5.6 kΩ

470 nF5.6 kΩ

C20R10

C26 IN2P

IN2M

FB GND FB GND

C28

220 pF

R11

470 nF5.6 kΩ

R13

10 ΩR14

22 Ω

OUT2M

OUT2P LS2

C32

100

100 nF

C31

GND

470 nF5.6 kΩ

C29

100 nF

VDDA VSSA

19 2413

VSSA VSSP

VDDA2

VSSA2

PROT

n.c.

VSSP

VSSP2

OUT2

BOOT2

VDDP

VDDP2

VSSD

C34

100 nF

C35

FB GND FB GND

100 nF

VDDA VSSA

C12

100 nF

C13

VDDA1

VSSA1

100 nF

C37

15 nF

C27

100 nF

C39

100 nF

C38

VSSP

VDDP

VSSP1

VDDP1

MODE

71210

OSC

100 nF

C14

100 nF

C16

100 nF

C15

47 µF/

63 V

100 µF/10 V

470 µF/35 V

C33

220 pF

STABI

C36

100 nF

VDDP

C40

220 pF

C10

220 pF

VSSP

C41

220 pF

R12

TDA8922BTH

10 Ω

30 kΩ

22 Ω

5.6 kΩ

DZ1

5V6

47 µF/35 V

100 nF

100 nF S1

OUT1P

OUT1M LS1

LS1/LS2 L3/L4 C22/C31

2 Ω10 µH1 µF

4 Ω22 µH 680 nF

6 Ω33 µH 470 nF

8 Ω47 µH 330 nF

C24

100

C22

GND

OUT1

BOOT1

15 nF

C21

L1 BEAD

VDD

CON1

GND

VSS

+25 V

−25 V

L2 BEAD

VDDP

VSSA

ON/OFF OPERATE/MUTE

VDDP

VDDA

VDDP

VSSP

VSSA

VSSP

SINGLE ENDED

OUTPUT FILTER VALUES

C11

220 pF

Preliminary data sheet Rev. 01 — 1 October 2004 21 of 32

Philips Semiconductors TDA8922B

2× 50 W class-D power ampliﬁer

13.9 Curves measured in reference design

VP=±26 V; 2 ×6Ω SE conﬁguration.

(1) f = 6 kHz.

(2) f = 1 kHz.

(3) f = 100 Hz.

VP=±26 V; 2 ×8Ω SE conﬁguration.

(1) f = 6 kHz.

(2) f = 1 kHz.

(3) f = 100 Hz.

Fig 10. (THD + N)/S as a function of output power; SE

conﬁguration with 2 ×6Ω load. Fig 11. (THD + N)/S as a function of output power; SE

conﬁguration with 2 ×8Ω load.

VP=±21 V; 1 ×8Ω BTL conﬁguration.

(1) f = 6 kHz.

(2) f = 1 kHz.

(3) f = 100 Hz.

VP=±26 V; 2 ×6Ω SE conﬁguration.

(1) Po=10W.

(2) Po=1W.

Fig 12. (THD + N)/S as a function of output power; BTL

conﬁguration with 8 Ω load. Fig 13. (THD + N)/S as function of frequency, SE

conﬁguration with 2 ×6Ω load.

Po (W)

10−2103

102

10−1101

001aab199

(2)

(3)

(1)

10−1

10−2

102

(THD + N)/S

(%)

10−3

001aab200

10−1

10−2

102

10−3

Po (W) 102

1010−1

10−21

(2)

(3)

(1)

(THD + N)/S

(%)

Po (W)

10−2103

102

10−1101

001aab201

10−1

10−2

102

10−3

(2)

(3)

(1)

(THD + N)/S

(%)

001aab202

10−1

10−2

102

10−3

f (Hz)

10 105

104

102103

(1)

(2)

(THD + N)/S

(%)

Preliminary data sheet Rev. 01 — 1 October 2004 22 of 32

Philips Semiconductors TDA8922B

2× 50 W class-D power ampliﬁer

VP=±26 V; 2 ×8Ω SE conﬁguration.

(1) Po=10W.

(2) Po=1W.

VP=±21 V; 1 ×8Ω BTL conﬁguration.

(1) Po=10W.

(2) Po=1W.

Fig 14. (THD + N)/S as function of frequency, SE

conﬁguration with 2 ×8Ω load. Fig 15. (THD + N)/S as function of frequency, BTL

conﬁguration with 8 Ω load.

VP=±26 V; 2 ×6Ω SE conﬁguration.

(1) Po=10W.

(2) Po=1W.

VP=±26 V; 2 ×8Ω SE conﬁguration.

(1) Po=10W.

(2) Po=1W.

Fig 16. Channel separation as a function of frequency;

SE conﬁguration with 2 ×6Ω load. Fig 17. Channel separation as a function of frequency;

SE conﬁguration with 2 ×8Ω load.

001aab203

10−1

10−2

102

10−3

f (Hz)

10 105

104

102103

(1)

(2)

(THD + N)/S

(%)

001aab204

10−1

10−2

102

10−3

f (Hz)

10 105

104

102103

(1)

(2)

(THD + N)/S

(%)

001aab205

−60

−40

−80

−20

αcs

(dB)

−100

f (Hz)

10 105

104

102103

(1)

(2)

001aab206

−60

−40

−80

−20

αcs

(dB)

−100

f (Hz)

10 105

104

102103

(1)

(2)

Preliminary data sheet Rev. 01 — 1 October 2004 23 of 32

Philips Semiconductors TDA8922B

2× 50 W class-D power ampliﬁer

f = 1 kHz.

(1) VP=±21 V; 1 ×8Ω BTL conﬁguration.

(2) VP=±26 V; 2 ×6Ω SE conﬁguration.

(3) VP=±26 V; 2 ×8Ω SE conﬁguration.

f = 1 kHz.

(1) VP=±26 V; 2 ×8Ω SE conﬁguration.

(2) VP=±26 V; 2 ×6Ω SE conﬁguration.

(3) VP=±21 V; 1 ×8Ω BTL conﬁguration.

Fig 18. Power dissipation as a function of total output

power. Fig 19. Efﬁciency as a function of total output power.

(THD + N)/S = 0.5 %; f = 1 kHz.

(1) 1 ×8Ω BTL conﬁguration.

(2) 2 ×6Ω SE conﬁguration.

(3) 2 ×8Ω SE conﬁguration.

(THD + N)/S = 10 %; f = 1 kHz.

(1) 1 ×8Ω BTL conﬁguration.

(2) 2 ×6Ω SE conﬁguration.

(3) 2 ×8Ω SE conﬁguration.

Fig 20. Output power as a function of supply voltage;

(THD + N)/S = 0.5 %. Fig 21. Output power as a function of supply voltage;

(THD+N)/S=10%.

001aab207

Ptot

(W)

Po (W)

10−2103

102

10−1101

(1)

(2)

(3)

Po (W)

0 20016080 12040

001aab208

100

(%)

(1) (2)

(3)

VS (V)

10 353020 2515

001aab209

120

(W)

(1)

(2)

(3)

VS (V)

10 353020 2515

001aab210

120

160

200

(W)

(1)

(2)

(3)

Preliminary data sheet Rev. 01 — 1 October 2004 24 of 32

Philips Semiconductors TDA8922B

2× 50 W class-D power ampliﬁer

Vi= 100 mV; Rs= 5.6 kΩ; Ci= 330 pF.

(1) VP=±21 V; 1 ×8Ω BTL conﬁguration.

(2) VP=±26 V; 2 ×6Ω SE conﬁguration.

(3) VP=±26 V; 2 ×8Ω SE conﬁguration.

Vi= 100 mV; Rs=0Ω; Ci= 330 pF.

(1) VP=±21 V; 1 ×8Ω BTL conﬁguration.

(2) VP=±26 V; 2 ×6Ω SE conﬁguration.

(3) VP=±26 V; 2 ×8Ω SE conﬁguration.

Fig 22. Gain as a function of frequency; Rs= 5.6 kΩ

and Ci= 330 pF. Fig 23. Gain as a function of frequency; Rs=0Ω and

Ci= 330 pF.

VP=±26 V; Vripple = 2 V (p-p).

(1) Both supply lines rippled.

(2) Both supply lines rippled in anti phase.

(3) One supply line rippled.

Vi= 100 mV; f = 1 kHz.

Fig 24. SVRR as a function of frequency. Fig 25. Output voltage as a function of mode voltage.

001aab211

(dB)

f (Hz)

10 105

104

102103

(1)

(2)

(3)

001aab212

(dB)

f (Hz)

10 105

104

102103

(1)

(2)

(3)

001aab213

−60

−40

−80

−20

SVRR

(dB)

−100

f (Hz)

10 105

104

102103

(1)

(2)

(3)

001aab214

(V)

10−3

10−5

10−4

10−1

10−2

10−6

Vmode (V)

0642

Preliminary data sheet Rev. 01 — 1 October 2004 25 of 32

Philips Semiconductors TDA8922B

2× 50 W class-D power ampliﬁer

14. Test information

14.1 Quality information

The

General Quality Speciﬁcation for Integrated Circuits, SNW-FQ-611

is applicable.

VP=±26 V; Rs= 5.6 kΩ; 20 kHz AES17 ﬁlter.

(1) 2 ×6Ω SE conﬁguration and 2 ×8Ω SE conﬁguration.

(2) 1 ×8Ω BTL conﬁguration.

Fig 26. S/N ratio as a function of output power.

001aab215

120

S/N

(dB)

Po (W)

10−2103

102

10−1101

(1) (2)

Preliminary data sheet Rev. 01 — 1 October 2004 26 of 32

Philips Semiconductors TDA8922B

2× 50 W class-D power ampliﬁer

15. Package outline

Fig 27. HSOP24 package outline.

UNIT A4(1)

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

03-02-18

03-07-23

IEC JEDEC JEITA

mm +0.08

−0.04

3.5 0.35

DIMENSIONS (mm are the original dimensions)

Notes

1. Limits per individual lead.

2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

SOT566-3

0 5 10 mm

scale

HSOP24: plastic, heatsink small outline package; 24 leads; low stand-off height SOT566-3

max.

detail X

3.5

3.2

1.1

0.9

14.5

13.9

1.1

0.8

1.7

1.5 2.7

2.2

0.25

8°

0°

0.07

0.03

13.0

12.6

6.2

5.8

2.9

2.5

bpc

0.32

0.23

D(2)

16.0

15.8

E(2)

11.1

10.9

0.53

0.40

A2(A3)

Lpθ

vMA

bpwM

D1D2

24 13

112

pin 1 index

Preliminary data sheet Rev. 01 — 1 October 2004 27 of 32

Philips Semiconductors TDA8922B

2× 50 W class-D power ampliﬁer

Fig 28. DBS23P package outline.

UNIT A2

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

mm 4.6

4.3

1.15

0.85

1.65

1.35

DIMENSIONS (mm are the original dimensions)

Note

1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

SOT411-1 98-02-20

02-04-24

0 5 10 mm

scale

Ze2

123

DBS23P: plastic DIL-bent-SIL power package; 23 leads (straight lead length 3.2 mm) SOT411-1

non-concave

view B: mounting base side

bpcD

(1) E(1) Z(1)

deDhLL

0.75

0.60 0.55

0.35 30.4

29.9 28.0

27.5 12 2.54

12.2

11.8 10.15

9.85

1.27

5.08 2.4

1.6

10.7

9.9

6.2

5.8

1.43

0.78

2.1

1.8

1.85

1.65 4.3

3.6

2.8

0.25

0.6

0.03

45°

Preliminary data sheet Rev. 01 — 1 October 2004 28 of 32

Philips Semiconductors TDA8922B

2× 50 W class-D power ampliﬁer

16. Soldering

16.1 Introduction

This text gives a very brief insight to a complex technology. A more in-depth account of

soldering ICs can be found in our

Data Handbook IC26; Integrated Circuit Packages

(document order number 9398 652 90011).

There is no soldering method that is ideal for all IC packages. Wave soldering is often

preferred when through-hole and surface mount components are mixed on one

printed-circuit board. Wave soldering can still be used for certain surface mount ICs, but it

is not suitable for ﬁne pitch SMDs. In these situations reﬂow soldering is recommended.

Driven by legislation and environmental forces the worldwide use of lead-free solder

pastes is increasing.

16.2 Through-hole mount packages

16.2.1 Soldering by dipping or by solder wave

Typical dwell time of the leads in the wave ranges from 3 seconds to 4 seconds at 250 °C

or 265 °C, depending on solder material applied, SnPb or Pb-free respectively.

The total contact time of successive solder waves must not exceed 5 seconds.

The device may be mounted up to the seating plane, but the temperature of the plastic

body must not exceed the speciﬁed maximum storage temperature (Tstg(max)). If the

printed-circuit board has been pre-heated, forced cooling may be necessary immediately

after soldering to keep the temperature within the permissible limit.

16.2.2 Manual soldering

Apply the soldering iron (24 V or less) to the lead(s) of the package, either below the

seating plane or not more than 2 mm above it. If the temperature of the soldering iron bit is

less than 300 °C it may remain in contact for up to 10 seconds. If the bit temperature is

between 300 °C and 400 °C, contact may be up to 5 seconds.

16.3 Surface mount packages

16.3.1 Reﬂow soldering

Reﬂow soldering requires solder paste (a suspension of ﬁne solder particles, ﬂux and

binding agent) to be applied to the printed-circuit board by screen printing, stencilling or

pressure-syringe dispensing before package placement.

Several methods exist for reﬂowing; for example, convection or convection/infrared

heating in a conveyor type oven. Throughput times (preheating, soldering and cooling)

vary between 100 seconds and 200 seconds depending on heating method.

Typical reﬂow peak temperatures range from 215 °Cto270°C depending on solder paste

material. The top-surface temperature of the packages should preferably be kept:

•below 225 °C (SnPb process) or below 245 °C (Pb-free process)

–for all BGA, HTSSON..T and SSOP..T packages

Preliminary data sheet Rev. 01 — 1 October 2004 29 of 32

Philips Semiconductors TDA8922B

2× 50 W class-D power ampliﬁer

–for packages with a thickness ≥2.5 mm

–for packages with a thickness < 2.5 mm and a volume ≥350 mm3 so called

thick/large packages.

•below 240 °C (SnPb process) or below 260 °C (Pb-free process) for packages with a

thickness < 2.5 mm and a volume < 350 mm3 so called small/thin packages.

Moisture sensitivity precautions, as indicated on packing, must be respected at all times.

16.3.2 Wave soldering

Conventional single wave soldering is not recommended for surface mount devices

(SMDs) or printed-circuit boards with a high component density, as solder bridging and

non-wetting can present major problems.

To overcome these problems the double-wave soldering method was speciﬁcally

developed.

If wave soldering is used the following conditions must be observed for optimal results:

•Use a double-wave soldering method comprising a turbulent wave with high upward

pressure followed by a smooth laminar wave.

•For packages with leads on two sides and a pitch (e):

–larger than or equal to 1.27 mm, the footprint longitudinal axis is preferred to be

parallel to the transport direction of the printed-circuit board;

–smaller than 1.27 mm, the footprint longitudinal axis must be parallel to the

transport direction of the printed-circuit board.

The footprint must incorporate solder thieves at the downstream end.

•For packages with leads on four sides, the footprint must be placed at a 45° angle to

the transport direction of the printed-circuit board. The footprint must incorporate

solder thieves downstream and at the side corners.

During placement and before soldering, the package must be ﬁxed with a droplet of

adhesive. The adhesive can be applied by screen printing, pin transfer or syringe

dispensing. The package can be soldered after the adhesive is cured.

Typical dwell time of the leads in the wave ranges from 3 seconds to 4 seconds at 250 °C

or 265 °C, depending on solder material applied, SnPb or Pb-free respectively.

A mildly-activated ﬂux will eliminate the need for removal of corrosive residues in most

applications.

16.3.3 Manual soldering

Fix the component by ﬁrst soldering two diagonally-opposite end leads. Use a low voltage

(24 V or less) soldering iron applied to the ﬂat part of the lead. Contact time must be

limited to 10 seconds at up to 300 °C.

When using a dedicated tool, all other leads can be soldered in one operation within

2 seconds to 5 seconds between 270 °C and 320 °C.

Preliminary data sheet Rev. 01 — 1 October 2004 30 of 32

Philips Semiconductors TDA8922B

2× 50 W class-D power ampliﬁer

16.4 Package related soldering information

[1] For more detailed information on the BGA packages refer to the

(LF)BGA Application Note

(AN01026); order a copy from your Philips

Semiconductors sales ofﬁce.

[2] All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum temperature (with

respect to time) and body size of the package, there is a risk that internal or external package cracks may occur due to vaporization of

the moisture in them (the so called popcorn effect). For details, refer to the Drypack information in the

Data Handbook IC26; Integrated

Circuit Packages; Section: Packing Methods

[3] For SDIP packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit board.

[4] Hot bar soldering or manual soldering is suitable for PMFP packages.

[5] These transparent plastic packages are extremely sensitive to reﬂow soldering conditions and must on no account be processed

through more than one soldering cycle or subjected to infrared reﬂow soldering with peak temperature exceeding 217 °C±10 °C

measured in the atmosphere of the reﬂow oven. The package body peak temperature must be kept as low as possible.

[6] These packages are not suitable for wave soldering. On versions with the heatsink on the bottom side, the solder cannot penetrate

between the printed-circuit board and the heatsink. On versions with the heatsink on the top side, the solder might be deposited on the

heatsink surface.

[7] If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction. The package footprint

must incorporate solder thieves downstream and at the side corners.

[8] Wave soldering is suitable for LQFP, QFP and TQFP packages with a pitch (e) larger than 0.8 mm; it is deﬁnitely not suitable for

packages with a pitch (e) equal to or smaller than 0.65 mm.

[9] Wave soldering is suitable for SSOP, TSSOP, VSO and VSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is deﬁnitely

not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.

[10] Image sensor packages in principle should not be soldered. They are mounted in sockets or delivered pre-mounted on ﬂex foil.

However, the image sensor package can be mounted by the client on a ﬂex foil by using a hot bar soldering process. The appropriate

soldering proﬁle can be provided on request.

17. Revision history

Table 11: Suitability of IC packages for wave, reﬂow and dipping soldering methods

Mounting Package[1] Soldering method

Wave Reﬂow[2] Dipping

Through-hole mount CPGA, HCPGA suitable −−

DBS, DIP, HDIP, RDBS, SDIP, SIL suitable[3] −suitable

Through-hole-surface

mount PMFP[4] not suitable not suitable −

Surface mount BGA, HTSSON..T[5], LBGA,

LFBGA, SQFP, SSOP..T[5],

TFBGA, VFBGA, XSON

not suitable suitable −

DHVQFN, HBCC, HBGA, HLQFP,

HSO, HSOP, HSQFP, HSSON,

HTQFP, HTSSOP, HVQFN,

HVSON, SMS

not suitable[6] suitable −

PLCC[7], SO, SOJ suitable suitable −

LQFP, QFP, TQFP not recommended[7] [8] suitable −

SSOP, TSSOP, VSO, VSSOP not recommended[9] suitable −

CWQCCN..L[10], WQCCN..L[10] not suitable not suitable −

Table 12: Revision history

Document ID Release date Data sheet status Change notice Order number Supersedes

TDA8922B_1 20041001 Preliminary data sheet - 9397 750 13357 -

Philips Semiconductors TDA8922B

2× 50 W class-D power ampliﬁer

Preliminary data sheet Rev. 01 — 1 October 2004 31 of 32

18. Data sheet status

[1] Please consult the most recently issued data sheet before initiating or completing a design.

[2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at

URL http://www.semiconductors.philips.com.

[3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

19. Deﬁnitions

Short-form speciﬁcation — The data in a short-form speciﬁcation is

extracted from a full data sheet with the same type number and title. For

detailed information see the relevant data sheet or data handbook.

Limiting values deﬁnition — Limiting values given are in accordance with

the Absolute Maximum Rating System (IEC 60134). Stress above one or

more of the limiting values may cause permanent damage to the device.

These are stress ratings only and operation of the device at these or at any

other conditions above those given in the Characteristics sections of the

speciﬁcation is not implied. Exposure to limiting values for extended periods

may affect device reliability.

Application information — Applications that are described herein for any

of these products are for illustrative purposes only. Philips Semiconductors

make no representation or warranty that such applications will be suitable for

the speciﬁed use without further testing or modiﬁcation.

20. Disclaimers

Life support — These products are not designed for use in life support

appliances, devices, or systems where malfunction of these products can

reasonably be expected to result in personal injury. Philips Semiconductors

customers using or selling these products for use in such applications do so

at their own risk and agree to fully indemnify Philips Semiconductors for any

damages resulting from such application.

Right to make changes — Philips Semiconductors reserves the right to

make changes in the products - including circuits, standard cells, and/or

software - described or contained herein in order to improve design and/or

performance. When the product is in full production (status ‘Production’),

relevant changes will be communicated via a Customer Product/Process

Change Notiﬁcation (CPCN). Philips Semiconductors assumes no

responsibility or liability for the use of any of these products, conveys no

license or title under any patent, copyright, or mask work right to these

products, and makes no representations or warranties that these products are

free from patent, copyright, or mask work right infringement, unless otherwise

speciﬁed.

21. Trademarks

Sil-Pad — is a registered trademark of The Bergquist

Company.

22. Contact information

For additional information, please visit: http://www.semiconductors.philips.com

For sales ofﬁce addresses, send an email to: sales.addresses@www.semiconductors.philips.com

Level Data sheet status[1] Product status[2] [3] Deﬁnition

I Objective data Development This data sheet contains data from the objective speciﬁcation for product development. Philips

Semiconductors reserves the right to change the speciﬁcation in any manner without notice.

II Preliminary data Qualiﬁcation This data sheet contains data from the preliminary speciﬁcation. Supplementary data will be published

at a later date. Philips Semiconductors reserves the right to change the speciﬁcation without notice, in

order to improve the design and supply the best possible product.

III Product data Production This data sheet contains data from the product speciﬁcation. Philips Semiconductors reserves the

right to make changes at any time in order to improve the design, manufacturing and supply. Relevant

changes will be communicated via a Customer Product/Process Change Notiﬁcation (CPCN).

All rights are reserved. Reproduction in whole or in part is prohibited without the prior

written consent of the copyright owner. The information presented in this document does

not form part of any quotation or contract, is believed to be accurate and reliable and may

be changed without notice. No liability will be accepted by the publisher for any

consequence of its use. Publication thereof does not convey nor imply any license under

patent- or other industrial or intellectual property rights. Date of release: 1 October 2004

Document order number: 9397 750 13357

Published in The Netherlands

Philips Semiconductors TDA8922B

2× 50 W class-D power ampliﬁer

23. Contents

1 General description. . . . . . . . . . . . . . . . . . . . . . 1

2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

4 Quick reference data . . . . . . . . . . . . . . . . . . . . . 2

5 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

6 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 3

7 Pinning information. . . . . . . . . . . . . . . . . . . . . . 4

7.1 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

7.2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 4

8 Functional description . . . . . . . . . . . . . . . . . . . 5

8.1 General. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

8.2 Pulse width modulation frequency . . . . . . . . . . 8

8.3 Protections . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

8.3.1 OverTemperature Protection (OTP) . . . . . . . . . 8

8.3.2 OverCurrent Protection (OCP) . . . . . . . . . . . . . 8

8.3.3 Window Protection (WP). . . . . . . . . . . . . . . . . . 9

8.3.4 Supply voltage protections . . . . . . . . . . . . . . . . 9

8.4 Differential audio inputs . . . . . . . . . . . . . . . . . 10

9 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . 11

10 Thermal characteristics. . . . . . . . . . . . . . . . . . 11

11 Static characteristics. . . . . . . . . . . . . . . . . . . . 11

12 Dynamic characteristics . . . . . . . . . . . . . . . . . 13

12.1 Switching characteristics . . . . . . . . . . . . . . . . 13

12.2 Stereo and dual SE application . . . . . . . . . . . 13

12.3 Mono BTL application. . . . . . . . . . . . . . . . . . . 14

13 Application information. . . . . . . . . . . . . . . . . . 15

13.1 BTL application. . . . . . . . . . . . . . . . . . . . . . . . 15

13.2 MODE pin . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

13.3 Output power estimation. . . . . . . . . . . . . . . . . 15

13.4 External clock . . . . . . . . . . . . . . . . . . . . . . . . . 16

13.5 Heatsink requirements . . . . . . . . . . . . . . . . . . 17

13.6 Output current limiting. . . . . . . . . . . . . . . . . . . 17

13.7 Pumping effects . . . . . . . . . . . . . . . . . . . . . . . 18

13.8 Application schematic. . . . . . . . . . . . . . . . . . . 19

13.9 Curves measured in reference design . . . . . . 21

14 Test information. . . . . . . . . . . . . . . . . . . . . . . . 25

14.1 Quality information . . . . . . . . . . . . . . . . . . . . . 25

15 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 26

16 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28

16.1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . 28

16.2 Through-hole mount packages. . . . . . . . . . . . 28

16.2.1 Soldering by dipping or by solder wave . . . . . 28

16.2.2 Manual soldering . . . . . . . . . . . . . . . . . . . . . . 28

16.3 Surface mount packages . . . . . . . . . . . . . . . . 28

16.3.1 Reﬂow soldering. . . . . . . . . . . . . . . . . . . . . . . 28

16.3.2 Wave soldering. . . . . . . . . . . . . . . . . . . . . . . . 29

16.3.3 Manual soldering . . . . . . . . . . . . . . . . . . . . . . 29

16.4 Package related soldering information. . . . . . 30

17 Revision history . . . . . . . . . . . . . . . . . . . . . . . 30

18 Data sheet status. . . . . . . . . . . . . . . . . . . . . . . 31

19 Deﬁnitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31

20 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 31

21 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 31

22 Contact information . . . . . . . . . . . . . . . . . . . . 31