LM48311
LM48311 Ultra-Low EMI, Filterless, 2.6W, Mono, Class D Audio Power
Amplifierwith E2S
Literature Number: SNAS484A
LM48311 March 17, 2010
Ultra-Low EMI, Filterless, 2.6W, Mono, Class D Audio
Power Amplifier with E2S
General Description
The LM48311 is a single supply, high efficiency, mono, 2.6W,
filterless switching audio amplifier. The LM48311 features
National’s Enhanced Emissions Suppression (E2S) system,
that features a unique patent-pending ultra low EMI, spread
spectrum, PWM architecture, that significantly reduces RF
emissions while preserving audio quality and efficiency. The
E2S system improves battery life, reduces external compo-
nent count, board area consumption, system cost, and sim-
plifying design.
The LM48311 is designed to meet the demands of portable
multimedia devices. Operating from a single 5V supply, the
device is capable of delivering 2.6W of continuous output
power to a 4Ω load with less than 10% THD+N. Flexible power
supply requirements allow operation from 2.4V to 5.5V. The
LM48311 features both a spread spectrum modulation
scheme, and an advanced, patented edge rate control (ERC)
architecture that significantly reduces emissions, while main-
taining high quality audio reproduction (THD+N = 0.03%) and
high efficiency (η = 88%).
The LM48311 features high efficiency compared to conven-
tional Class AB amplifiers, and other low EMI Class D ampli-
fiers. When driving and 8Ω speaker from a 5V supply, the
device operates with 88% efficiency at PO = 1W. The gain of
the LM48311 is internally set to 6dB, further reducing external
component count. A low power shutdown mode reduces sup-
ply current consumption to 0.01µA.
Advanced output short circuit protection with auto-recovery
prevents the device from being damaged during fault condi-
tions. Superior click and pop suppression eliminates audible
transients on power-up/down and during shutdown.
Key Specifications
■ Efficiency at 3.6V, 400mW into 8Ω85% (typ)
■ Efficiency at 5V, 1W into 8Ω88% (typ)
■ Quiescent Power Supply Current at 5V 3.1mA
■ Power Output at VDD = 5V, RL = 4Ω
THD+N ≤ 10%
THD+N ≤ 1%
2.6W (typ)
2.1W (typ)
■ Power Output at VDD = 5V, RL = 8Ω
THD+N ≤ 10%
THD+N ≤ 1%
1.6W (typ)
1.3W (typ)
■ Shutdown current 0.01μA (typ)
Features
■Passes FCC Class B Radiated Emissions with 20 inches
of cable
■E2S System Reduces EMI while Preserving Audio Quality
and Efficiency
■Output Short Circuit Protection with Auto-Recovery
■No output filter required
■Internally Configured Gain (6dB)
■Low power shutdown mode
■Minimum external components
■"Click and pop" suppression
■Micro-power shutdown
■Available in space-saving microSMD package
Applications
■Mobile phones
■PDAs
■Laptops
Boomer® is a registered trademark of National Semiconductor Corporation.
© 2010 National Semiconductor Corporation 300975 www.national.com
LM48311 Ultra-Low EMI, Filterless, 2.6W, Mono, Class D Audio Power Amplifier with E2S
Typical Application
300975a8
FIGURE 1. Typical Audio Amplifier Application Circuit
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LM48311
Connection Diagrams
TL Package
1.539mm x 1.565mm x 0.6mm
300975a3
Top View
Order Number LM48311TL
See NS Package Number TLA09BCA
9–Bump micro SMD Marking
300975a7
Top View
X = Date Code
T = Die Traceability
G = Boomer Family
N1 = LM48311TL
Ordering Information
Order Number Package Package DWG # Transport Media MSL Level Green Status
LM48311TL 9 Bump micro SMD TLA09BCA 250 units on tape and reel 1 RoHS & no Sb/Br
LM48311TLX 9 Bump micro SMD TLA09BCA 3000 units on tape and reel 1 RoHS & no Sb/Br
Pin Descriptions
TABLE 1. Bump Description
Pin Name Description
A1 IN+ Non-Inverting Input
A2 SD Active Low Shutdown Input. Connect to VDD for normal operation.
A3 OUTA Non-Inverting Output
B1 VDD Power Supply
B2 PVDD H-Bridge Power Supply
B3 PGND Power Ground
C1 IN- Inverting Input
C2 GND Ground
C3 OUTB Inverting Output
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LM48311
Absolute Maximum Ratings (Note 1, Note
2)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Supply Voltage 6.0V
Storage Temperature −65°C to +150°C
Input Voltage − 0.3V to VDD +0.3V
Power Dissipation (Note 3) Internally Limited
ESD Rating (Note 4) 2000V
ESD Rating (Note 5) 200V
Junction Temperature 150°C
Thermal Resistance
θJA 70°C/W
Soldering Information See AN-1112 "Micro SMD Wafer Level
Chip Scale Package."
Operating Ratings (Note 1, Note 2)
Temperature Range
TMIN ≤ TA ≤ TMAX −40°C ≤ TA ≤ +85°C
Supply Voltage (VDD, PVDD)2.4V ≤ VDD ≤ 5.5V
Electrical Characteristics VDD = PVDD = 5V (Note 2, Note 8)
The following specifications apply for AV = 6dB, RL = 8Ω, f = 1kHz, unless otherwise specified. Limits apply for TA = 25°C.
Symbol Parameter Conditions
LM48311 Units
(Limits)
Min
(Note 7)
Typ
(Note 6)
Max
(Note 7)
VDD Supply Voltage Range VIN = 0 2.4 5.5 V
IDD Quiescent Power Supply Current
VIN = 0, RL = ∞
VDD = 3.6V
VDD = 5V
2.7
3.1
3.4
3.9
mA
mA
ISD Shutdown Current Shutdown enabled 0.01 1.0 μA
VOS Differential Output Offset Voltage VIN = 0 –3 1 3 mV
VIH Logic Input High Voltage 1.4 V
VIL Logic Input Low Voltage 0.4 V
CMVR Common Mode Input Voltage Range 0 VDD–0.25 V
TWU Wake Up Time 7.5 ms
fSW Switching Frequency SYNC_IN = VDD (Spread Spectrum) 300±30 kHz
AVGain 5 6 7 dB
RIN Input Resistance 17 20 kΩ
RSD Input Resistance (SD) SD to GND 300 kΩ
POOutput Power
RL = 4Ω, THD = 10%
f = 1kHz, 22kHz BW
VDD = 5V
VDD = 3.6V
VDD = 2.5V
2.6
1.3
555
W
W
mW
RL = 8Ω, THD = 10%
f = 1kHz, 22kHz BW
VDD = 5V
VDD = 3.6V
VDD = 2.5V
1.6
800
354
W
mW
mW
RL = 4Ω, THD = 1%
f = 1kHz, 22kHz BW
VDD = 5V
VDD = 3.6V
VDD = 2.5V
2.1
1
446
W
W
mW
RL = 8Ω, THD = 1%
f = 1kHz, 22kHz BW
VDD = 5V
VDD = 3.6V
VDD = 2.5V
1.1 1.3
640
286
W (min)
mW
mW
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LM48311
Symbol Parameter Conditions
LM48311 Units
(Limits)
Min
(Note 7)
Typ
(Note 6)
Max
(Note 7)
THD+N Total Harmonic Distortion + Noise PO = 200mW, RL = 8Ω, f = 1kHz 0.03 %
PO = 100mW, RL = 8Ω, f = 1kHz 0.03 %
PSRR Power Supply Rejection Ratio
(Input Referred)
VRIPPLE = 200mVP-P Sine,
Inputs AC GND, CIN = 1μF
fRIPPLE = 217Hz
fRIPPLE = 1kHz
78
76
dB
dB
CMRR Common Mode Rejection Ratio
(Input Referred)
VRIPPLE = 1VP-P
fRIPPLE = 217Hz 86 dB
ηEfficiency VDD = 5V, POUT = 1W
VDD = 3.6V, POUT = 400mW
88
85
%
%
SNR Signal to Noise Ratio PO = 1W 97 dB
εOS
Output Noise
(Input Referred)
Un-weighted
A-weighted
28
22
μV
μV
Note 1: “Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur, including inoperability and degradation of device reliability
and/or performance. Functional operation of the device and/or non-degradation at the Absolute Maximum Ratings or other conditions beyond those indicated in
the Recommended Operating Conditions is not implied. The Recommended Operating Conditionsindicate conditions at which the device is functional and the
device should not be operated beyond such conditions. All voltages are measured with respect to the ground pin, unless otherwise specified.
Note 2: The Electrical Characteristics tables list guaranteed specifications under the listed Recommended Operating Conditions except as otherwise modified
or specified by the Electrical Characteristics Conditions and/or Notes. Typical specifications are estimations only and are not guaranteed.
Note 3: The maximum power dissipation must be derated at elevated temperatures and is dictated by TJMAX, θJA, and the ambient temperature, TA. The maximum
allowable power dissipation is PDMAX = (TJMAX- TA) / θJA or the number given in Absolute Maximum Ratings, whichever is lower.
Note 4: Human body model, applicable std. JESD22-A114C.
Note 5: Machine model, applicable std. JESD22-A115-A.
Note 6: Typical values represent most likely parametric norms at TA = +25°C, and at the Recommended Operation Conditions at the time of product
characterization and are not guaranteed.
Note 7: Datasheet min/max specification limits are guaranteed by test or statistical analysis.
Note 8: RL is a resistive load in series with two inductors to simulate an actual speaker load. For RL = 8Ω, the load is 15µH + 8Ω, +15µH. For RL = 4Ω, the load
is 15µH + 4Ω + 15µH.
30097528
FIGURE 2. PSRR Test Circuit
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LM48311
30097527
FIGURE 3. CMRR Test Circuit
Typical Performance Characteristics
For all performance graphs, the Output Gains are set to 0dB, unless otherwise noted.
THD+N vs Frequency
VDD = 2.5V, PO = 250mW, RL = 4Ω
30097504
THD+N vs Frequency
VDD = 3.6V, PO = 600mW, RL = 4Ω
30097505
THD+N vs Frequency
VDD = 5 .0V, PO = 1.2W, RL = 4Ω
30097506
THD+N vs Frequency
VDD = 2.5V, PO = 175mW, RL = 8Ω
30097507
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LM48311
THD+N vs Frequency
VDD = 3.6V, PO = 400mW, RL = 8Ω
30097508
THD+N vs Frequency
VDD = 3.6V, PO = 600mW, RL = 8Ω
30097509
THD+N vs Frequency
VDD = 3.6V, PO = 1.25W, RL = 3Ω
30097510
THD+N vs Output Power
f = 1kHz, RL = 4Ω
30097501
THD+N vs Output Power
f = 1kHz, RL = 8Ω
30097502
THD+N vs Output Power
f = 1kHz, RL = 3Ω
30097503
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LM48311
Efficiency vs Output Power
f = 1kHz, RL = 4Ω
30097511
Efficiency vs Output Power
f = 1kHz, RL = 8Ω
30097512
Power Dissipation vs Output Power
f = 1kHz, RL = 4Ω
30097513
Power Dissipation vs Output Power
f = 1kHz, RL = 8Ω
30097514
Output Power vs Supply Voltage
f = 1kHz, RL = 4Ω
30097515
Output Power vs Supply Voltage
f = 1kHz, RL = 8Ω
30097516
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LM48311
CMRR vs Frequency
VDD= 5.0V, VRIPPLE = 1VP-P, RL = 8Ω
30097529
PSRR vs Frequency
VDD= 5.0V, VRIPPLE = 200mVP-P, RL = 8Ω
30097517
Spread Spectrum Output Spectrum vs Frequency
VDD= 5.0V, VIN = 1VRMS, RL = 8Ω
30097519
Wideband Spread Spectrum Output Spectrum vs Frequency
VDD= 5.0V, RL = 8Ω
30097520
Supply Current vs Supply Voltage
No Load
30097521
Shutdown Supply Current vs Supply Voltage
No Load
30097522
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LM48311
Application Information
GENERAL AMPLIFIER FUNCTION
The LM48311 mono Class D audio power amplifier features
a filterless modulation scheme that reduces external compo-
nent count, conserving board space and reducing system
cost. The outputs of the device transition from VDD to GND
with a 300kHz switching frequency. With no signal applied,
the outputs (VOUTA and VOUTB) switch with a 50% duty cycle,
in phase, causing the two outputs to cancel. This cancellation
results in no net voltage across the speaker, thus there is no
current to the load in the idle state.
With the input signal applied, the duty cycle (pulse width) of
the LM48311 outputs changes. For increasing output voltage,
the duty cycle of VOUTA increases, while the duty cycle of
VOUTB decreases. For decreasing output voltages, the con-
verse occurs. The difference between the two pulse widths
yields the differential output voltage.
ENHANCED EMISSIONS SUPPRESSION SYSTEM (E2S)
The LM48311 features National’s patent-pending E2S system
that reduces EMI, while maintaining high quality audio repro-
duction and efficiency. The E2S system features spread spec-
trum and advanced edge rate control (ERC). The LM48311
ERC greatly reduces the high frequency components of the
output square waves by controlling the output rise and fall
times, slowing the transitions to reduce RF emissions, while
maximizing THD+N and efficiency performance. The overall
result of the E2S system is a filterless Class D amplifier that
passes FCC Class B radiated emissions standards with 20in
of twisted pair cable, with excellent 0.03% THD+N and high
88% efficiency.
SPREAD SPECTRUM
The spread spectrum modulation reduces the need for output
filters, ferrite beads or chokes. The switching frequency varies
randomly by 30% about a 300kHz center frequency, reducing
the wideband spectral contend, improving EMI emissions ra-
diated by the speaker and associated cables and traces.
Where a fixed frequency class D exhibits large amounts of
spectral energy at multiples of the switching frequency, the
spread spectrum architecture of the LM48311 spreads that
energy over a larger bandwidth (See Typical Performance
Characteristics). The cycle-to-cycle variation of the switching
period does not affect the audio reproduction, efficiency, or
PSRR.
DIFFERENTIAL AMPLIFIER EXPLANATION
As logic supplies continue to shrink, system designers are in-
creasingly turning to differential analog signal handling to
preserve signal to noise ratios with restricted voltage signs.
The LM48311 features a fully differential speaker amplifier. A
differential amplifier amplifies the difference between the two
input signals. Traditional audio power amplifiers have typical-
ly offered only single-ended inputs resulting in a 6dB reduc-
tion of SNR relative to differential inputs. The LM48311 also
offers the possibility of DC input coupling which eliminates the
input coupling capacitors. A major benefit of the fully differ-
ential amplifier is the improved common mode rejection ratio
(CMRR) over single ended input amplifiers. The increased
CMRR of the differential amplifier reduces sensitivity to
ground offset related noise injection, especially
POWER DISSIPATION AND EFFICIENCY
The major benefit of a Class D amplifier is increased efficiency
versus a Class AB. The efficiency of the LM48311 is attributed
to the region of operation of the transistors in the output stage.
The Class D output stage acts as current steering switches,
consuming negligible amounts of power compared to their
Class AB counterparts. Most of the power loss associated
with the output stage is due to the IR loss of the MOSFET on-
resistance, along with switching losses due to gate charge.
SHUTDOWN FUNCTION
The LM48311 features a low current shutdown mode. Set
SD = GND to disable the amplifier and reduce supply current
to 0.01µA.
Switch SD between GND and VDD for minimum current con-
sumption is shutdown. The LM48311 may be disabled with
shutdown voltages in between GND and VDD, the idle current
will be greater than the typical 0.1µA value. Increased THD
+N may also be observed when a voltage of less than VDD is
applied to SD.
The LM48311 shutdown input has and internal pulldown re-
sistor. The purpose of this resistor is to eliminate any unwant-
ed state changes when SD is floating. To minimize shutdown
current, SD should be driven to GND or left floating. If SD is
not driven to GND or floating, an increase in shutdown supply
current will be noticed.
AUDIO AMPLIFIER POWER SUPPLY BYPASSING/
FILTERING
Proper power supply bypassing is critical for low noise per-
formance and high PSRR. Place the supply bypass capaci-
tors as close to the device as possible. Typical applications
employ a voltage regulator with 10µF and 0.1µF bypass ca-
pacitors that increase supply stability. These capacitors do
not eliminate the need for bypassing of the LM48311 supply
pins. A 1µF capacitor is recommended.
AUDIO AMPLIFIER INPUT CAPACITOR SELECTION
Input capacitors may be required for some applications, or
when the audio source is single-ended. Input capacitors block
the DC component of the audio signal, eliminating any conflict
between the DC component of the audio source and the bias
voltage of the LM48311. The input capacitors create a high-
pass filter with the input resistors RIN. The -3dB point of the
high pass filter is found using Equation (1) below.
f = 1 / 2πRINCIN
Where RIN is the value of the input resistor given in the Elec-
trical Characteristics table.
The input capacitors can also be used to remove low fre-
quency content from the audio signal. Small speakers cannot
reproduce, and may even be damaged by low frequencies.
High pass filtering the audio signal helps protect the speakers.
When the LM48311 is using a single-ended source, power
supply noise on the ground is seen as an input signal. Setting
the high-pass filter point above the power supply noise fre-
quencies, 217Hz in a GSM phone, for example, filters out the
noise such that it is not amplified and heard on the output.
Capacitors with a tolerance of 10% or better are recommend-
ed for impedance matching and improved CMRR and PSRR.
AUDIO AMPLIFIER GAIN
The gain of the LM48311 is internally set to 6dB. The gain can
be reduced by adding additional input resistance (Figure 6).
In this configuration, the gain of the device is given by:
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LM48311
AV = 2 x [RF / (RINEXT + RIN)]
Where RF is 40kΩ, RIN is 20kΩ, and RINEXT is the value of the
additional external resistor.
30097561
FIGURE 4. Reduced Gain Configuration
SINGLE-ENDED AUDIO AMPLIFIER CONFIGURATION
The LM48311 is compatible with single-ended sources. When
configured for single-ended inputs, input capacitors must be
used to block and DC component at the input of the device.
Figure 5 shows the typical single-ended applications circuit.
300975a6
FIGURE 5. Single-Ended Input Configuration
PCB LAYOUT GUIDELINES
As output power increases, interconnect resistance (PCB
traces and wires) between the amplifier, load and power sup-
ply create a voltage drop. The voltage loss due to the traces
between the LM48311 and the load results in lower output
power and decreased efficiency. Higher trace resistance be-
tween the supply and the LM48311 has the same effect as a
poorly regulated supply, increasing ripple on the supply line,
and reducing peak output power. The effects of residual trace
resistance increases as output current increases due to high-
er output power, decreased load impedance or both. To main-
tain the highest output voltage swing and corresponding peak
output power, the PCB traces that connect the output pins to
the load and the supply pins to the power supply should be
as wide as possible to minimize trace resistance.
The use of power and ground planes will give the best THD
+N performance. In addition to reducing trace resistance, the
use of power planes creates parasitic capacitors that help to
filter the power supply line.
The inductive nature of the transducer load can also result in
overshoot on one of both edges, clamped by the parasitic
diodes to GND and VDD in each case. From an EMI stand-
point, this is an aggressive waveform that can radiate or
conduct to other components in the system and cause inter-
ference. In is essential to keep the power and output traces
short and well shielded if possible. Use of ground planes
beads and micros-strip layout techniques are all useful in pre-
venting unwanted interference.
wires or traces acting as antennas become more efficient with
length. Ferrite chip inductors places close to the LM48311
outputs may be needed to reduce EMI radiation.
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LM48311
BUILD OF MATERIALS
LM48311TL Demoboard Bill of Materials
Designator Quantity Description
C1 1 10µF ±10% 16V Tantalum Capacitor (B Case) AVX TPSB106K016R0800
C2 1 1µF ±10% 16V X5R Ceramic Capacitor (603) Panasonic ECJ-1VB1C105K
C3, C4 2 1µF ±10% 16V X7R Ceramic Capacitor (1206) Panasonic ECJ-3YB1C105K
JU1 1 3-Pin Header
LM48311TL 1 LM48311TL (9-Bump microSMD)
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LM48311
LM48311 Demo Board Schematic
30097530
FIGURE 6. LM48311 Demo Board Schematic
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LM48311
Demo Boards
30097526
FIGURE 7. Top Silkscreen
30097525
FIGURE 8. Top Layer
30097524
FIGURE 9. Bottom Silkscreen
30097523
FIGURE 10. Bottom Layer
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LM48311
Revision History
Rev Date Description
1.0 06/25/09 Initial released.
1.01 03/17/10 Text edits (under ENHANCED EMISSIONS....)
15 www.national.com
LM48311
Physical Dimensions inches (millimeters) unless otherwise noted
9 Bump micro SMD
Order Number LM48311TL
NS Package Number TLA09BCA
X1 = 1.539mm X2 = 1.565mm X3 = 0.6mm
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LM48311
Notes
17 www.national.com
LM48311
Notes
LM48311 Ultra-Low EMI, Filterless, 2.6W, Mono, Class D Audio Power Amplifier with E2S
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