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For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE AMPLIFIERS - CHIP
1
HMC462
v02.0213
GaAs pHEMT MMIC
LOW NOISE AMPLIFIER, 2 - 20 GHz
Functional Diagram
Features
Noise Figure: 2 dB
Gain: 15 dB
P1dB +15.5 dBm
Self-Biased: +5V @ 63 mA
50 Ohm Matched Input/Output
Die Size: 3.0 x 1.3 x 0.1 mm
Typical Applications
The HMC462 is ideal for:
• Test Instrumentation
• Microwave Radio & VSAT
• Military & Space
• Telecom Infrastructure
• Fiber Optics
General Description
The HMC462 is a GaAs MMIC pHEMT Low Noise
Distributed Amplier which operates between 2
and 20 GHz. The amplier provides 15 dB of small
signal gain, 2.5 dB noise gure, and up to +15.5 dBm
of output power at 1dB compression. Gain atness
is excellent at ±0.3 dB from 8 - 14 GHz making the
HMC462 ideal for EW, ECM, and Radar applications.
The HMC462 requires a single supply of +5V @ 63
mA and is the self biased version of the HMC463.
The wideband amplier I/Os are internally matched
to 50 Ohms facilitating integration into Multi-Chip-
Modules (MCMs). All data is measured with the chip in
a 50 Ohm test xture connected via 0.025 mm (1 mil)
diameter wire bonds of 0.31 mm (12 mils) length.
Electrical Specications, TA = +25° C, Vdd = +5V, Idd = 63 mA
Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units
Frequency Range 2 - 8 8 - 16 16 - 20 GHz
Gain 13.5 15.5 13 15 12.5 14.5 dB
Gain Flatness ±0.2 ±0.3 ±0.2 dB
Gain Variation Over Temperature 0.005 0.011 0.019 dB/ °C
Input Return Loss 16 19 16 dB
Output Return Loss 18 19 18 dB
Output Power for 1 dB Compression (P1dB) 12.5 15.5 11.5 14.5 10 13 dBm
Saturated Output Power (Psat) 18 17 15.5 dBm
Output Third Order Intercept (IP3) 26 25 24 dBm
Noise Figure 32.5 2.5 dB
Supply Current (Idd) 41 63 84 41 63 84 41 63 84 mA
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE AMPLIFIERS - CHIP
2
HMC462
v02.0213
GaAs pHEMT MMIC
LOW NOISE AMPLIFIER, 2 - 20 GHz
Output Return Loss vs. Temperature
Gain & Return Loss Gain vs. Temperature
Reverse Isolation vs. Temperature
Input Return Loss vs. Temperature
Noise Figure vs. Temperature
-30
-20
-10
0
10
20
0 4 8 12 16 20 24
S21 S11 S22
RESPONSE (dB)
FREQUENCY (GHz)
6
8
10
12
14
16
18
2 4 6 8 10 12 14 16 18 20 22
+25 C +85 C -55 C
GAIN (dB)
FREQUENCY (GHz)
-40
-30
-20
-10
0
2 4 6 8 10 12 14 16 18 20 22
+25 C +85 C -55 C
RETURN LOSS (dB)
FREQUENCY (GHz)
-40
-30
-20
-10
0
2 4 6 8 10 12 14 16 18 20 22
+25 C +85 C -55 C
RESPONSE (dB)
FREQUENCY (GHz)
-70
-60
-50
-40
-30
-20
-10
0
2 4 6 8 10 12 14 16 18 20 22
+25 C +85 C -55 C
ISOLATION (dB)
FREQUENCY (GHz)
0
1
2
3
4
5
6
2 4 6 8 10 12 14 16 18 20 22
+25 C +85 C -55 C
NOISE FIGURE (dB)
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE AMPLIFIERS - CHIP
3
HMC462
v02.0213
GaAs pHEMT MMIC
LOW NOISE AMPLIFIER, 2 - 20 GHz
Psat vs. Vdd
P1dB vs. Temperature Psat vs. Temperature
Output IP3 vs. Temperature
@ Pout = 4 dBm Tone
P1dB vs. Vdd
Output IP3 vs. Vdd
@ Pout = 4 dBm Tone
6
8
10
12
14
16
18
20
22
2 4 6 8 10 12 14 16 18 20 22
+25 C +85 C -55 C
P1dB (dBm)
FREQUENCY (GHz)
6
8
10
12
14
16
18
20
22
2 4 6 8 10 12 14 16 18 20 22
+25 C +85 C -55 C
Psat (dBm)
FREQUENCY (GHz)
6
8
10
12
14
16
18
20
22
2 4 6 8 10 12 14 16 18 20 22
+4V +5V +6V
P1dB (dBm)
FREQUENCY (GHz)
6
8
10
12
14
16
18
20
22
2 4 6 8 10 12 14 16 18 20 22
+4V +5V +6V
Psat (dBm)
FREQUENCY (GHz)
15
18
21
24
27
30
2 4 6 8 10 12 14 16 18 20 22
+25 C +85 C -55 C
IP3 (dBm)
FREQUENCY (GHz)
15
18
21
24
27
30
2 4 6 8 10 12 14 16 18 20 22
+4V +5V +6V
IP3 (dBm)
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE AMPLIFIERS - CHIP
4
HMC462
v02.0213
GaAs pHEMT MMIC
LOW NOISE AMPLIFIER, 2 - 20 GHz
Power Compression @ 20 GHz Power Dissipation
Power Compression @ 4 GHz Power Compression @ 12 GHz
0
4
8
12
16
20
-15 -13 -11 -9 -7 -5 -3 -1 1 3 5 7
Pout Gain PAE
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
0
4
8
12
16
20
-15 -13 -11 -9 -7 -5 -3 -1 1 3 5 7
Pout Gain PAE
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
0
4
8
12
16
20
-14 -12 -10 -8 -6 -4 -2 0 2 4
Pout Gain PAE
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
0
0.1
0.2
0.3
0.4
0.5
0.6
-14 -12 -10 -8 -6 -4 -2 0 2 4 6 8
4 GHz 12 GHz 20 GHz
POWER DISSIPATION (W)
INPUT POWER (dBm)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE AMPLIFIERS - CHIP
5
HMC462
v02.0213
GaAs pHEMT MMIC
LOW NOISE AMPLIFIER, 2 - 20 GHz
Absolute Maximum Ratings
Drain Bias Voltage (Vdd) +9 Vdc
RF Input Power (RFIN) +18 d Bm
Channel Temperature 175 °C
Continuous Pdiss (T= 85 °C)
(derate 24.4 mW/°C above
85 °C)
2.2 W
Thermal Resistance
(channel to die bottom) 41 °C/ W
Storage Temperature -65 to 150°C
Operating Temperature -55 to 85 °C
Vdd (V) Idd (mA)
464
566
668
770
872
Typical Supply Current vs. Vdd
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. DIE THICKNESS IS 0.004”
3. TYPICAL BOND PAD IS 0.004” SQUARE
4. BOND PAD METALIZATION: GOLD
5. BACKSIDE METALIZATION: GOLD
6. BACKSIDE METAL IS GROUND
7. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS
8. OVERALL DIE SIZE ±0.002”
Die Packaging Information [1]
Standard Alternate
GP-1 (Gel Pack) [2]
[1] For more information refer to the “Packaging
Information” Document in the Product Support Section of
our website .
[2] For alternate packaging information contact Hittite
Microwave Corporation.
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE AMPLIFIERS - CHIP
6
HMC462
v02.0213
GaAs pHEMT MMIC
LOW NOISE AMPLIFIER, 2 - 20 GHz
Pad Descriptions
Pad Number Function Description Interface Schematic
1RFIN This pad is AC coupled and matched to 50 Ohms
2Vdd Power supply voltage for teh amplier
External bypass capacitors are required
3RFOUT This pad is AC coupled and matched to 50 Ohms
Die Bottom GND Die bottom must be connected to RF/DC ground.
Assembly Diagram
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE AMPLIFIERS - CHIP
7
HMC462
v02.0213
GaAs pHEMT MMIC
LOW NOISE AMPLIFIER, 2 - 20 GHz
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Han-
dling, Mounting, Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin lm substrates are recommended for
bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin lm substrates must be used, the
die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One
way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader
(moly-tab) which is then attached to the ground plane (Figure 2).
Microstrip substrates should be located as close to the die as possible in order to minimize bond wire length. Typical
die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils).
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffle or Gel based ESD protec-
tive containers, and then sealed in an ESD protective bag for shipment.
Once the sealed ESD protective bag has been opened, all die should be
stored in a dry nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt
to clean the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against > ± 250V
ESD strikes.
Transients: Suppress instrument and bias supply transients while bias is
applied. Use shielded signal and bias cables to minimize inductive pick-
up.
General Handling: Handle the chip along the edges with a vacuum collet
or with a sharp pair of bent tweezers. The surface of the chip may have
fragile air bridges and should not be touched with vacuum collet, twee-
zers, or ngers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutec-
tic preforms or with electrically conductive epoxy. The mounting surface
should be clean and at.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work
surface temperature of 255 °C and a tool temperature of 265 °C. When
hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be
290 °C. DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3
seconds of scrubbing should be required for attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy llet is observed
around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage
temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recom-
mended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on
the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils).
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
RF Ground Plane
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
0.076mm
(0.003”)
Figure 1.
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
RF Ground Plane
0.254mm (0.010”) Thick Alumina
Thin Film Substrate
0.076mm
(0.003”)
Figure 2.
0.150mm (0.005”) Thick
Moly Tab
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE AMPLIFIERS - CHIP
8
HMC462
v02.0213
GaAs pHEMT MMIC
LOW NOISE AMPLIFIER, 2 - 20 GHz
Notes: