© 2010 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 1mA 600 V
VGS(th) VDS = VGS, ID = 8mA 3.0 5.5 V
IGSS VGS = ±30 V, VDS = 0V ± 200 nA
IDSS VDS = VDSS, VGS = 0V 50 μA
TJ = 125°C 3 mA
RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 88 mΩ
DS99006C(7/10)
HiPerFETTM Power
MOSFET Q2-Class
Features
zDouble Metal Process for Low Gate
Resistance
zAvalanche Rated
zLow Package Inductance
zFast Intrinsic Rectifier
Advantages
zPLUS 264TM Package for Clip or Spring
Mounting
zSpace Savings
zHigh Power Density
Applications
zDC-DC Converters
zSwitch-Mode and Resonant-Mode
Power Supplies, > 500kHz Switching
zDC Choppers
zPulse Generation
zLaser Drivers
IXFB70N60Q2 VDSS = 600V
ID25 = 70A
RDS(on) ≤≤
≤≤
≤ 88mΩΩ
ΩΩ
Ω
trr ≤≤
≤≤
≤ 250ns
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 600 V
VDGR TJ= 25°C to 150°C, RGS = 1MΩ600 V
VGSS Continuous ± 30 V
VGSM Transient ± 40 V
ID25 TC= 25°C70A
IDM TC= 25°C, Pulse Width Limited by TJM 280 A
IATC= 25°C70A
EAS TC= 25°C5J
dv/dt IS≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 20 V/ns
PDTC= 25°C 890 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6 mm (0.063 in.) from Case for 10s 300 °C
TSOLD Plastic Body for 10s 260 °C
FCMounting Force 30..120/6.7..27 N/lbs
Weight 10 g
N-Channel Enhancement Mode
Avalanche Rated, Low QG,
Low Intrinsic RG
High dv/dt, Low trr
G = Gate D = Drain
S = Source Tab = Drain
PLUS264TM
Tab
S
G
D
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFB70N60Q2
Note: 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2 %.
PLUS264TM (IXFB) Outline
IF = 25A, VGS = 0V
-di/dt = 100 A/μs
VR = 100 V
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = 10V, ID = 0.5 • ID25, Note 1 36 50 S
Ciss 12 nF
Coss VGS = 0V, VDS = 25V, f = 1MHz 1340 pF
Crss 345 pF
td(on) 26 ns
tr 25 ns
td(off) 60 ns
tf 12 ns
Qg(on) 265 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 57 nC
Qgd 120 nC
RthJC 0.14 °C/W
RthCS 0.15 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
ISVGS = 0V 70 A
ISM Repetitive, Pulse Width Limited by TJM 280 A
VSD IF = IS, VGS = 0V, Note 1 1.5 V
trr 250 ns
QRM 1.2 μC
IRM 8.0 A
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 35A
RG = 1Ω (External)
© 2010 IXYS CORPORATION, All Rights Reserved
IXFB70N60Q2
Fig. 2. Ext ended Output Characteristics
@ T
J
= 25ºC
0
20
40
60
80
100
120
140
02468101214161820
VDS - Vo l t s
I D - Amperes
V
GS
= 1 0 V
5V
7V
6V
Fig. 3. Output Characteristics
@ T
J
= 125º C
0
10
20
30
40
50
60
70
0246810121416
VDS - V olt s
I D - Ampe r e s
V
GS
= 1 0 V
7V
5V
6V
Fig. 1. Output Characteristics
@ T
J
= 25ºC
0
10
20
30
40
50
60
70
01234567
VDS - V olt s
I D - Ampe r e s
V
GS
= 1 0 V
7V
6V
5V
Fig. 4 . R
DS( on)
Normalized to 0.5 I
D2 5
Value vs.
Jun ction Te m pe r atur e
0.2
0.6
1.0
1.4
1.8
2.2
2.6
3.0
-50-25 0 25 50 75100125150
TJ - Degrees Centigrade
RD S (on) - N o rma lized
I
D
= 70A
I
D
= 3 5A
V
GS
= 1 0V
Fig. 6. Drain Current vs. Case Temperature
0
10
20
30
40
50
60
70
80
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centig r ad e
I D - Amp e re s
Fig. 5 . R
DS(on)
Normalized to 0. 5 I
D25
V alue vs. I
D
0.6
1.0
1.4
1.8
2.2
2.6
0 20406080100120140
I D - Amp eres
RD S (on) - Normalized
T
J
= 1 25ºC
T
J
= 2 5ºC
V
GS
= 1 0V
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFB70N60Q2
IXYS REF: F _70N60Q2(95)5-28-08-A
Fig. 11. Capacitance
100
1000
10000
100000
0 5 10 15 20 25 30 35 40
VDS - V o l ts
Capacitance - pF
C
iss
C
oss
C
rss
f = 1 M Hz
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 40 80 120 160 200 240 280
Q G - nanoCoulom bs
VG S - Volts
V
D S
= 300V
I
D
= 3 5A
I
G
= 1 0 mA
Fig. 7 . Input A dm it tanc e
0
10
20
30
40
50
60
70
80
90
100
3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5
VGS - Vol ts
I D - Amp e res
T
J
= 1 2 5º
C
2 5 ºC
- 40 ºC
Fi
g
. 8. Tr a nsc onduc t a nc e
0
10
20
30
40
50
60
70
80
90
100
0 102030405060708090100
I D - Amperes
g
f s - Siemens
T
J
= - 4 0
º
C
25
º
C
1 25
º
C
Fi
g
. 9. S ource Current vs. Source-To-Drain
Voltage
0
20
40
60
80
100
120
140
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
VSD - V olts
I S - Amperes
T
J
= 2 5
º
C
T
J
= 1 2 5
º
C
Fi
g
. 12. Max imum Transient Thermal
Impedance
0.001
0.010
0.100
1.000
0.0001 0.001 0.01 0.1 1 10
P ul se Wi dth - S ec o nds
Z(th)JC - ºC / W
