Semiconductor Components Industries, LLC, 2004
April, 2004 − Rev. 4 1Publication Order Number:
2N3055/D
2N3055, MJ2955
Preferred Device
Complementary Silicon
Power Transistors
...designed for general−purpose switching and amplifier
applications.
•DC Current Gain − hFE = 20−70 @ IC = 4 Adc
•Collector−Emitter Saturation Voltage −
VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc
•Excellent Safe Operating Area
•Pb−Free Package is Available
MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Rating
ÎÎÎ
ÎÎÎ
Symbol
ÎÎÎÎÎ
ÎÎÎÎÎ
Value
ÎÎ
ÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Collector−Emitter Voltage
ÎÎÎ
ÎÎÎ
VCEO
ÎÎÎÎÎ
ÎÎÎÎÎ
60
ÎÎ
ÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Collector−Emitter Voltage
ÎÎÎ
ÎÎÎ
VCER
ÎÎÎÎÎ
ÎÎÎÎÎ
70
ÎÎ
ÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎ
Collector−Base Voltage
ÎÎÎ
Î
Î
Î
ÎÎÎ
VCB
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
100
ÎÎ
ÎÎ
ÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter−Base Voltage
ÎÎÎ
ÎÎÎ
VEB
ÎÎÎÎÎ
ÎÎÎÎÎ
7
ÎÎ
ÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Current − Continuous
ÎÎÎ
ÎÎÎ
IC
ÎÎÎÎÎ
ÎÎÎÎÎ
15
ÎÎ
ÎÎ
Adc
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Base Current
ÎÎÎ
ÎÎÎ
IB
ÎÎÎÎÎ
ÎÎÎÎÎ
7
ÎÎ
ÎÎ
Adc
ÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎ
Total Power Dissipation @ TC = 25°C
Derate above 25°C
ÎÎÎ
Î
Î
Î
ÎÎÎ
PD
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
115
0.657
ÎÎ
ÎÎ
ÎÎ
W
W/°C
ÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎ
Operating and Storage Junction Tempera-
ture Range
ÎÎÎ
Î
Î
Î
ÎÎÎ
TJ, Tstg
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
–65 to +200
ÎÎ
ÎÎ
ÎÎ
°C
THERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic
ÎÎÎ
ÎÎÎ
Symbol
ÎÎÎÎÎ
ÎÎÎÎÎ
Max
ÎÎ
ÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Thermal Resistance, Junction−to−Case
ÎÎÎ
ÎÎÎ
RJC
ÎÎÎÎÎ
ÎÎÎÎÎ
1.52
ÎÎ
ÎÎ
°C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
160
00 25 50 75 100 125 150 175 200
Figure 1. Power Derating
TC, CASE TEMPERATURE (°C)
PD, POWER DISSIPATION (WATTS)
140
120
100
80
60
40
20
15 A
POWER TRANSISTORS
COMPLEMENTARY SILICON
60 V
115 W
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Preferred devices are recommended choices for future use
and best overall value.
Device Package Shipping†
ORDERING INFORMATION
2N3055 TO−204AA 100 Units / Tray
MJ2955 TO−204AA
TO−204AA (TO−3)
CASE 1−07
100 Units / Tray
MARKING
DIAGRAM
xxxx55 = Device Code
xxxx= 2N3055 or MJ2955
A = Assembly Location
YY = Year
WW = Work Week
x = 1, 2, or 3
xxxx55
A
YYWW
2N3055G TO−204AA
(Pb−Free) 1 Units / Tubes
2N3055H TO−204AA 100 Units / Tray
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy
and soldering details, please download the
ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
2N3055, MJ2955
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2
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
Symbol
ÎÎÎ
Î
Î
Î
ÎÎÎ
Min
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
Max
ÎÎÎ
Î
Î
Î
ÎÎÎ
Unit
*OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 1)
(IC = 200 mAdc, IB = 0) VCEO(sus) 60 − Vdc
Collector−Emitter Sustaining Voltage (Note 1)
(IC = 200 mAdc, RBE = 100 )VCER(sus) 70 − Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current
(VCE = 30 Vdc, IB = 0)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
ICEO
ÎÎÎ
Î
Î
Î
ÎÎÎ
−
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
0.7
ÎÎÎ
Î
Î
Î
ÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current
(VCE = 100 Vdc, VBE(off) = 1.5 Vdc)
(VCE = 100 Vdc, VBE(off) = 1.5 Vdc, TC = 150°C)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
ICEX
ÎÎÎ
Î
Î
Î
ÎÎÎ
−
−
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
1.0
5.0
ÎÎÎ
Î
Î
Î
ÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter Cutoff Current
(VBE = 7.0 Vdc, IC = 0)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
IEBO
ÎÎÎ
Î
Î
Î
ÎÎÎ
−
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
5.0
ÎÎÎ
Î
Î
Î
ÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
*ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 4.0 Adc, VCE = 4.0 Vdc)
(IC = 10 Adc, VCE = 4.0 Vdc)
hFE 20
5.0 70
−
−
Collector−Emitter Saturation Voltage
(IC = 4.0 Adc, IB = 400 mAdc)
(IC = 10 Adc, IB = 3.3 Adc)
VCE(sat) − 1.1
3.0
Vdc
Base−Emitter On Voltage
(IC = 4.0 Adc, VCE = 4.0 Vdc) VBE(on) − 1.5 Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
SECOND BREAKDOWN
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Second Breakdown Collector Current with Base Forward Biased
(VCE = 40 Vdc, t = 1.0 s, Nonrepetitive)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
Is/b
ÎÎÎ
Î
Î
Î
ÎÎÎ
2.87
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
−
ÎÎÎ
Î
Î
Î
ÎÎÎ
Adc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DYNAMIC CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Current Gain − Bandwidth Product
(IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 MHz)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
fT
ÎÎÎ
Î
Î
Î
ÎÎÎ
2.5
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
−
ÎÎÎ
Î
Î
Î
ÎÎÎ
MHz
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
*Small−Signal Current Gain
(IC = 1.0 Adc, VCE = 4.0 Vdc, f = 1.0 kHz)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
hfe
ÎÎÎ
Î
Î
Î
ÎÎÎ
15
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
120
ÎÎÎ
Î
Î
Î
ÎÎÎ
−
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
*Small−Signal Current Gain Cutoff Frequency
(VCE = 4.0 Vdc, IC = 1.0 Adc, f = 1.0 kHz)
ÎÎÎÎÎ
ÎÎÎÎÎ
fhfe
ÎÎÎ
ÎÎÎ
10
ÎÎÎÎ
ÎÎÎÎ
−
ÎÎÎ
ÎÎÎ
kHz
*Indicates Within JEDEC Registration. (2N3055)
1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.
20
6
Figure 2. Active Region Safe Operating Area
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
10
6
4
2
1
0.6
0.4
0.2 10 20 40 60
IC, COLLECTOR CURRENT (AMP)
dc
500 s
1 ms
250 s
50 s
BONDING WIRE LIMIT
THERMALLY LIMITED @ TC = 25°C (SINGLE PULSE)
SECOND BREAKDOWN LIMIT
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 2 is based on TC = 25°C; TJ(pk) is
variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be
derated for temperature according to Figure 1.
2N3055, MJ2955
http://onsemi.com
3
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
500
0.1
Figure 3. DC Current Gain, 2N3055 (NPN)
IC, COLLECTOR CURRENT (AMP)
5.0 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 10
100
50
30
20
200
70
hFE, DC CURRENT GAIN
TJ = 150°C
25°C
−55 °C
VCE = 4.0 V
200
0.1
IC, COLLECTOR CURRENT (AMP)
10 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 10
70
30
20
100
50
hFE, DC CURRENT GAIN
TJ = 150°C
25°C
−55 °C
VCE = 4.0 V
7.0
10
300
7.0 7.0
Figure 4. DC Current Gain, MJ2955 (PNP)
2.0
5.0
IB, BASE CURRENT (mA)
010 20 50 100 200 500 1000 2000 5000
1.6
1.2
0.8
0.4
IC = 1.0 A
TJ = 25°C
4.0 A 8.0 A
2.0
IB, BASE CURRENT (mA)
0
1.6
1.2
0.8
0.4
1.4
0.1
IC, COLLECTOR CURRENT (AMPERES)
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 10
1.0
0.6
0.4
0.2
0
TJ = 25°C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
V, VOLTAGE (VOLTS)
Figure 5. Collector Saturation Region,
2N3055 (NPN)
1.2
0.8
7.0
VBE @ VCE = 4.0 V
2.0
0.1
IC, COLLECTOR CURRENT (AMP)
0.2 0.3 0.5 1.0 2.0 3.0 5.0 10
1.2
0.4
0
TJ = 25°C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
V, VOLTAGE (VOLTS)
1.6
0.8
VBE @ VCE = 4.0 V
5.0 10 20 50 100 200 500 1000 2000 5000
IC = 1.0 A
TJ = 25°C
4.0 A 8.0 A
Figure 6. Collector Saturation Region,
MJ2955 (PNP)
Figure 7. “On” Voltages, 2N3055 (NPN) Figure 8. “On” Voltages, MJ2955 (PNP)
2N3055, MJ2955
http://onsemi.com
4
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO−204AA OUTLINE SHALL APPLY.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A1.550 REF 39.37 REF
B−−− 1.050 −−− 26.67
C0.250 0.335 6.35 8.51
D0.038 0.043 0.97 1.09
E0.055 0.070 1.40 1.77
G0.430 BSC 10.92 BSC
H0.215 BSC 5.46 BSC
K0.440 0.480 11.18 12.19
L0.665 BSC 16.89 BSC
N−−− 0.830 −−− 21.08
Q0.151 0.165 3.84 4.19
U1.187 BSC 30.15 BSC
V0.131 0.188 3.33 4.77
A
N
E
C
K
−T− SEATING
PLANE
2 PL
D
M
Q
M
0.13 (0.005) Y M
T
M
Y
M
0.13 (0.005) T
−Q−
−Y−
2
1
UL
GB
V
H
TO−204 (TO−3)
CASE 1−07
ISSUE Z
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