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Product Summary
Part Number BVDSS RDS(on) ID
IRFE9130 -100V 0.30Ω-6.5A
Features:
nHermetically Sealed
nSimple Drive Requirements
nEase of Paralleling
nSmall footprint
nSurface Mount
nLightweight
Absolute Maximum Ratings
Parameter IRFE9130, JANTX-, J ANTXV-, JANS-,2N6849 Units
ID @ VGS = -10V, TC = 25°C Continuous Drain Current -6.5
ID @ VGS = -10V, TC = 100°C Continuous Drain Current -4.1
IDM Pulsed Drain Current 25
PD @ TC = 25°C Max. Power Dissipation 25 W
Linear Derating Factor 0.20 W/K
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy 165 mJ
dv/dt Peak Diode Recovery dv/dt -30 V/ns
TJOperating Junction -55 to 150
TSTG Storage Temperature Range
Surface Temperature 300 ( for 5 seconds)
Weight 0.42 (typical) g
P-CHANNEL
Provisional Data Sheet No. PD - 9.1716
-100Volt, 0.30ΩΩ
ΩΩ
Ω, HEXFET
The leadless chip carrier (LCC) package represents
the logical next step in the continual evolution of
surface mount technology. The LCC provides
designers the extra flexibility they need to increase
circuit board density. International Rectifier has
engineered the LCC package to meet the specific
needs of the power market by increasing the size of
the bottom source pad, thereby enhancing the
thermal and electrical performance. The lid of the
package is grounded to the source to reduce RF
interference.
HEXFET transistors also feature all of the well-es-
tablished advantages of MOSFETs, such as volt-
age control, ve r y fast switching, ease of paralleling
and electrical parameter temperature stability. The y
are well-suited for applications such as switching
power supplies, motor controls, in verters, choppers,
audio amplifiers and high-energy pulse circuits, and
vir tually any application where high reliability is re-
quired.
oC
A
1/5/98
IRFE9130
REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6849U
HEXFET
®
TRANSISTOR JANTXV2N6849U
JANS2N6849U
[REF:MIL-PRF-19500/564]
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IRFE9130, JANTX-, JANTXV-, JANS-, 2N6849U Device
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
BVDSS Drain-to-Source Breakdown Voltage -100 — — V V GS =0 V, ID = -1.0mA
∆BVDSS/∆TJTemperature Coefficient of Breakdown — -0.10 — V/°C Reference to 25°C, I D = -1.0mA
Voltage
RDS(on) Static Drain-to-Source — — 0.30 VGS = -10V, ID = -4.1A
On-State Resistance — — 0.345 ΩVGS = -10V, ID = -6.5A
VGS(th) Gate Threshold Voltage -2.0 — -4.0 V VDS = VGS, ID = -250µA
gfs Forward Transconductance 1.9 — — S ( )V
DS > 15V, IDS = -4.1A
IDSS Zero Gate Voltage Drain Current — — -25 VDS= 0.8 x Max Rating,V GS=0V
— — -250 VDS = 0.8 x Max Rating
VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Leakage Forward — — 1 00 VGS = 20 V
IGSS Gate-to-Source Leakage Reverse — — -100 VGS = -20V
QgTotal Gate Charge — — 35 VGS = -10V, ID = -6.5A
Qgs Gate-to-Source Charge — — 6. 8 nC VDS = Max Rating x 0.5
Qgd Gate-to-Drain (‘Miller’) Charge — — 23
td(on) Turn-On Delay Time — — 60 VDD = -50V, ID = -6.5A,
trRise Time — — 140 R G = 7.5Ω
td(off) Turn-Off Delay Time — — 14 0
tfF all Time — — 140
LDInternal Drain Inductance — 1.8 —
LSInter nal Source Inductance — 4 .3 —
Ciss Input Capacitance — 790 — VGS = 0V, V DS = -25 V
Coss Output Capacitance — 340 — pF f = 1.0MHz
Crss Rev erse Transfer Capacitance — 7 1 —
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units Test Conditions
ISContinuous Source Current (Body Diode) — — -6.5
ISM Pulse Source Current (Body Diode) — — -25
VSD Diode Forward Voltage — — -4.3 V Tj = 25°C, IS = -6.5A, VGS = 0V
trr Reverse Recovery Time — — 25 0 ns Tj = 25°C, IF = -6.5A, di/dt ≤ -100A/µs
QRR Reverse Recovery Charge — — 3. 0 µ C VDD ≤ -50V
ton F orward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
AModified MOSFET symbol
showing the integral reverse
p-n junction rectifier.
nA
Ω
nH
ns
Measured from drain pad to
die.
Measured from center of
source pad to the end of
source bonding wire.
Modified MOSFET symbol show-
ing the internal inductances.
µA
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
RthJC Junction-to-Case — — 5.0 K/W
RthJPCB Junction-to-PC Board — — 19 Soldered to a copper clad PC board
Details of notes through are on the last page
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IRFE9130, JANTX-, JANTXV-, JANS-, 2N6849U Device
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
1
10
100
0.1 1 10 100
20
µ
s PULSE WIDTH
T = 25 C
J°
TOP
BOTTOM
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
-V , Drain-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
DS
D
-4.5V
1
10
100
0.1 1 10 100
20
µ
s PULSE WIDTH
T = 150 C
J°
TOP
BOTTOM
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
-V , Drain-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
DS
D
-4.5V
-60 -40 -20 0 20 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
-10V
-6.5A
1
10
100
4 5 6 7 8 9
V = -50V
20µs PULSE WIDTH
DS
-V , Gate-to-Source Volta
g
e (V)
-I , Drain-to-Source Current (A)
GS
D
T = 25 C
J°
T = 150 C
J°
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IRFE9130, JANTX-, JANTXV-, JANS-, 2N6849U Device
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
1 10 100
0
200
400
600
800
1000
1200
1400
-V , Drain-to-Source Voltage (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss
g
s
g
d , ds
rss
g
d
oss ds
g
d
Ciss
Coss
Crss
010 20 30 40
0
4
8
12
16
20
Q , Total Gate Char
g
e (nC)
-V , Gate-to-Source Voltage (V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
-6.5A
V =-20V
DS
V =-50V
DS
V =-80V
DS
0.1
1
10
100
1 10 100 1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
Sin
g
le Pulse
T
T = 150 C
= 25 C
°°
J
C
-V , Drain-to-Source Volta
g
e (V)
-I , Drain Current (A)I , Drain Current (A)
DS
D
100us
1ms
10ms
0.1
1
10
0.5 1.0 1.5 2.0 2.5 3.0
-V ,Source-to-Drain Volta
e (V)
-I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J°
T = 150 C
J°
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IRFE9130, JANTX-, JANTXV-, JANS-, 2N6849U Device
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
25 50 75 100 125 150
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
T , Case Temperature ( C)
-I , Drain Current (A)
°
C
D
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
JDM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
VDS
-10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
VDD
RGD.U.T.
+
-
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
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IRFE9130, JANTX-, JANTXV-, JANS-, 2N6849U Device
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tpV
(
BR
)
DSS
I
AS
R
G
IAS
0.01
Ω
t
p
D.U.T
L
V
DS
VDD
DRIVER A
15V
-20V
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Q
G
Q
GS
Q
GD
V
G
Charge
-10V
D.U.T. V
DS
I
D
I
G
-3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
-10V
-10V
25 50 75 100 125 150
0
100
200
300
400
Starting T , Junction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
ID
TOP
BOTTOM
-2.9A
-4.1A
-6.5A
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IRFE9130, JANTX-, JANTXV-, JANS-, 2N6849U Device
Peak Diode Recovery dv/dt Test Circuit
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D = P.W.
Period
+
-
+
+
+
-
-
-
RGVDD
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T*Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
* Reverse Polarity of D.U.T for P-Channel
VGS
[ ]
[ ]
*** VGS = 5.0V for Logic Level and 3V Drive Devices
[ ] ***
Fig 14. For P-Channel HEXFETS
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IRFE9130, JANTX-, JANTXV-, JANS-, 2N6849U Device
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/ Data and specifications subject to change without notice. 1/98
Repetitive Rating; Pulse width limited by
maximum junction temperature.
Refer to current HEXFET reliability report.
Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
ISD ≤ -6.5A, di/dt ≤ -390 A/µs,
VDD ≤ BVDSS, TJ ≤ 150°C
Suggested R G = 2.35Ω
@ VDD = -25 V, Starting TJ = 25°C,
EAS = [0.5 * L * (IL2) ]
Peak IL = -6.5A, VGS =10 V, 25 ≤ RG ≤ 200Ω
K/W = °C/W
Notes:
Case Outline and Dimensions — Leadless Chip Carrier (LCC) Package
IR Case Style Leadless Chip Carrier (LCC)