DATA SH EET
Product specification
File under Discrete Semiconductors, SC07 July 1993
DISCRETE SEMICONDUCTORS
J111; J112; J113
N-channel silicon field-effect
transistors
July 1993 2
Philips Semiconductors Product specification
N-channel silicon field-effect transistors J111; J112; J113
DESCRIPTION
Symmetrical silicon n-channel
junction FETs in plastic TO-92
envelopes. They are intended for
applications such as analog switches,
choppers, commutators etc.
FEATURES
•High speed switching
•Interchangeability of drain and
source connections
•Low RDS on at zero gate voltage
PINNING
Note: Drain and source are
interchangeable.
1 = gate
2 = source
3 = drain
Fig.1 Simplified outline and symbol, TO-92.
handbook, halfpage
1
3
2
MAM042
s
d
g
QUICK REFERENCE DATA
J111 J112 J113
Drain-source voltage ±VDS max. 40 40 40 V
Drain current
VDS = 15 V; VGS =0 I
DSS min. 20 5 2 mA
Total power dissipation
up to Tamb =50°CP
tot max. 400 400 400 mW
Gate-source cut-off voltage min.
max. 3
10 1
50.5
3V
V
VDS = 5 V; ID=1µA−V
GS off
Drain-source on-state resistance
VDS = 0.1 V; VGS =0 R
DS on max. 30 50 100 Ω
July 1993 3
Philips Semiconductors Product specification
N-channel silicon field-effect transistors J111; J112; J113
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL RESISTANCE
STATIC CHARACTERISTICS
Tj=25°C unless otherwise specified
Drain-source voltage ±VDS max. 40 V
Gate-source voltage −VGSO max. 40 V
Gate-drain voltage −VGDO max. 40 V
Gate forward current (DC) IGmax. 50 mA
Total power dissipation
up to Tamb =50°CP
tot max. 400 mW
Storage temperature range Tstg −65 to +150 °C
Junction temperature Tjmax. 150 °C
From junction to ambient in free air Rth j-a = 250 K/W
J111 J112 J113
Gate reverse current
−VGS = 15 V; VDS =0 −I
GSS max. 1 1 1 nA
Drain cut-off current
VDS =5 V;−V
GS = 10 V −IDSX max. 1 1 1 nA
Drain saturation current
VDS = 15 V; VGS =0 I
DSS min. 20 5 2 mA
Gate-source breakdown voltage
−IG=1µA; VDS =0 −V
(BR)GSS min. 40 40 40 V
Gate-source cut-off voltage
VDS = 5 V; ID=1µA−V
GS off min. 3 1 0.5 V
max. 10 5 3 V
Drain-source on-state resistance
VDS = 0.1 V; VGS =0 R
DSon max. 30 50 100 Ω
July 1993 4
Philips Semiconductors Product specification
N-channel silicon field-effect transistors J111; J112; J113
DYNAMIC CHARACTERISTICS
Tj=25°C unless otherwise specified
Input capacitance
VDS =0;−V
GS = 10 V; f = 1 MHz Cis typ. 6 pF
VDS =−VGS = 0; f = 1 MHz Cis typ. 22 pF
max. 28 pF
Feedback capacitance
VDS =0;−V
GS = 10 V; f = 1 MHz Crs typ. 3 pF
Switching times
test conditions
VDD = 10 V; VGS = 0 to VGSoff
−VGS off = 12 V; RL= 750 Ωfor J111
−VGS off = 7 V; RL= 1550 Ωfor J112
−VGS off = 5 V; RL= 3150 Ωfor J113
Rise time trtyp. 6 ns
Turn-on time ton typ. 13 ns
Fall time tftyp. 15 ns
Turn-off time toff typ. 35 ns
Fig.2 Switching times test circuit.
o
k, halfpage
MBK289
50 Ω
RL
DUT
10 µF
1 µF
VDD 10 nF
50 Ω
SAMPLING
SCOPE
50 Ω
Fig.3 Input and output waveforms.
MBK288
VGS off toff
tf
VGS = 0 V
Vi
Vo
10%
90%
90%
10%
ton
tr
July 1993 5
Philips Semiconductors Product specification
N-channel silicon field-effect transistors J111; J112; J113
PACKAGE OUTLINE
UNIT A
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
mm 5.2
5.0
b
0.48
0.40
c
0.45
0.40
D
4.8
4.4
d
1.7
1.4
E
4.2
3.6
L
14.5
12.7
e
2.54
e1
1.27
L1(1)
2.5
b1
0.66
0.56
DIMENSIONS (mm are the original dimensions)
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
SOT54 TO-92 SC-43 97-02-28
A L
0 2.5 5 mm
scale
b
c
D
b1L1
d
E
Plastic single-ended leaded (through hole) package; 3 leads SOT54
e1e
1
2
3
July 1993 6
Philips Semiconductors Product specification
N-channel silicon field-effect transistors J111; J112; J113
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Short-form specification The data in this specification is extracted from a full data sheet with the same type
number and title. For detailed information see the relevant data sheet or data handbook.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
