© Semiconductor Components Industries, LLC, 2008
July, 2008 − Rev. 0
1Publication Order Number:
NYC222/D
NYC222STT1G,
NYC226STT1G,
NYC228STT1G
Sensitive Gate
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed and tested for repetitive peak operation required for CD
ignition, fuel ignitors, flash circuits, motor controls and low-power
switching applications.
Features
•Blocking Voltage to 600 V
•High Surge Current − 15 A
•Very Low Forward “On” Voltage at High Current
•Low-Cost Surface Mount SOT−223 Package
•These are Pb−Free Devices
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Symbol Value Unit
Peak Repetitive Off−State Voltage (Note 1)
(RGK = IK, TJ = *40 to +110°C, Sine Wave,
50 to 60 Hz, Gate Open) NYC222
NYC226
NYC228
VDRM,
VRRM 50
400
600
V
On-State Current RMS
(180° Conduction Angles, TC = 80°C)
IT(RMS) 1.5 A
Peak Non-repetitive Surge Current,
@TA = 25°C, (1/2 Cycle, Sine Wave, 60 Hz)
ITSM 15 A
Circuit Fusing Considerations (t = 8.3 ms) I2t 0.9 A2s
Forward Peak Gate Power
(Pulse Width ≤ 1.0 msec, TA = 25°C)
PGM 0.5 W
Forward Average Gate Power
(t = 8.3 msec, TA = 25°C)
PG(AV) 0.1 W
Forward Peak Gate Current
(Pulse Width ≤1.0 ms, TA = 25°C)
IFGM 0.2 A
Reverse Peak Gate Voltage
(Pulse Width ≤1.0 ms, TA = 25°C)
VRGM 5.0 V
Operating Junction Temperature Range
@ Rated VRRM and VDRM
TJ−40 to +110 °C
Storage Temperature Range Tstg −40 to
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
SCRs
1.5 AMPERES RMS
400 thru 600 VOLTS
K
G
A
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PIN ASSIGNMENT
1
2
3 G (Gate)
K (Cathode)
A (Anode)
4A (Anode)
SOT−223
CASE 318E
STYLE 11
MARKING
DIAGRAM
A = Assembly Location
Y = Year
W = Work Week
XXXXX = Device Code
G= Pb−Free Package
(Note: Microdot may be in either loca-
tion)
Device Package Shipping†
ORDERING INFORMATION
NYC222STT1G SOT−223
(Pb−Free)
1000 /Tape & Reel
NYC226STT1G SOT−223
(Pb−Free)
1000 /Tape & Reel
NYC228STT1G SOT−223
(Pb−Free)
1000 /Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1
AYW
XXXXXG
G
NYC222STT1G, NYC226STT1G, NYC228STT1G
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2
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Ambient PCB Mounted RqJA 156 °C/W
Thermal Resistance, Junction−to−Tab Measured on MT2 Tab Adjacent to Epoxy RqJT 25 °C/W
Maximum Device Temperature for
Soldering Purposes for 10 Secs Maximum
TL260 °C
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current
(VAK = Rated VDRM/VRRM; RGK = 1000 W)T
C = 25°C
TC = 110°C
IDRM, IRRM
−
−
−
−
10
200
mA
mA
ON CHARACTERISTICS
Peak Forward On−State Voltage (Note 2)
(ITM = 2.2 A Peak)
VTM −1.2 1.7 V
Gate Trigger Current (dc) (Note 3) TC = 25°C
(VAK = 7 Vdc, RL = 100 W)T
C = −40°C
IGT −
−
30
−
200
500
mA
Gate Trigger Voltage (dc) (Note 3) TC = 25°C
(VAK = 7 Vdc, RL = 100 W)T
C = −40°C
VGT −
−
−
−
0.8
1.2
V
Gate Non−Trigger Voltage
(VAK = VDRM, RL = 100 W)T
C = 110°C
VGD 0.1 − − V
Holding Current
(VAK = 12 V, RGK = 1000 W)T
C = 25°C
Initiating Current = 200 mA TC = −40°C
IH
−
−
2.0
−
5.0
10
mA
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off−State Voltage
(TC = 110°C)
dv/dt −25 −V/ms
2. Pulse Width = 1.0 ms, Duty Cycle v1%.
3. RGK Current not included in measurement.
+ Current
+ Voltage
VTM
IDRM at VDRM
IH
Symbol Parameter
VDRM Peak Repetitive Off State Forward Voltage
IDRM Peak Forward Blocking Current
VRRM Peak Repetitive Off State Reverse Voltage
IRRM Peak Reverse Blocking Current
VTM Peak on State Voltage
IHHolding Current
Voltage Current Characteristic of SCR
Anode +
on state
Reverse Blocking Region
(off state)
Reverse Avalanche Region
Anode −
Forward Blocking Region
IRRM at VRRM
(off state)
NYC222STT1G, NYC226STT1G, NYC228STT1G
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3
T , MAXIMUM ALLOWABLE
AAMBIENT TEMPERATURE ( C)°
T , MAXIMUM ALLOWABLE
CCASE TEMPERATURE ( C)°
dc
dc
IT(AV), AVERAGE ON‐STATE CURRENT (AMPS)
1.8 0 0.2 0.4 0.6 0.8
120
1.0
0
20
40
60
80
100
140
IT(AV), AVERAGE ON‐STATE CURRENT (AMP)
CURRENT DERATING
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 2.0
100
1.6
20
60
140
a = CONDUCTION
ANGLE
a = 180°
a = CONDUCTION ANGLE
a = 180°
Figure 1. Maximum Case Temperature Figure 2. Maximum Ambient Temperature
I , INSTANTANEOUS ON‐STATE CURRENT (AMP)
T
1.5
VT
, INSTANTANEOUS ON‐STATE VOLTAGE
(VOLTS)
0 0.5 1.0 2.0
0.01
0.05
2.5
0.02
0.1
0.03
3.0
0.07
0.2
0.3
0.5
0.7
1.0
2.0
5.0
25°C
TJ = 110°C
Figure 3. Typical Forward Voltage
NYC222STT1G, NYC226STT1G, NYC228STT1G
http://onsemi.com
4
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED
)
1000
t, TIME (ms)
100
0
50000.2 200050020010020 50105.02.01.00.5
0.05
0.1
0.01
0.02
0.07
0.7
0.03
0.1
0.2
0.3
0.5
1.0
Figure 4. Thermal Response
P MAXIMUM AVERAGE POWER DISSIPATION (WATTS)
(AV)
I , HOLDING CURRENT (mA)
HV , GATE TRIGGER VOLTAGE (VOLTS)
GT
I GATE TRIGGER CURRENT (
GT μ
0.4
0.5
0.6
0.7
0.8
100
0.3
-75 -50 0 25 7550-25
TJ, JUNCTION TEMPERATURE (°C)
VAK = 7.0 V
RL = 100
80
20
01101006040
TJ, JUNCTION TEMPERATURE (°C)
1.0
5.0
2.0
-40
10
-20
VAK = 12 V
RL = 100 W
1.0
2.0
3.0
5.0
10
20
30
0-40 -20
50
20 40 60 80 100
100
110
TJ JUNCTION TEMPERATURE (°C)
1.8
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
2.0
0.2 0.6
IT(AV), AVERAGE ON‐STATE CURRENT (AMPS)
1.61.20.40
dc
1.4
120
°
1.0
90°
0.8
180°
60°
30°
TYPICAL CHARACTERISTICS
A)
Figure 5. Typical Gate Trigger Voltage Figure 6. Typical Gate Trigger Current
Figure 7. Typical Holding Current Figure 8. Power Dissipation
110
NYC222STT1G, NYC226STT1G, NYC228STT1G
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5
PACKAGE DIMENSIONS
SOT−223 (TO−261)
CASE 318E−04
ISSUE M
STYLE 11:
PIN 1. MT 1
2. MT 2
3. GATE
4. MT 2
A1
b1
D
E
b
e
e1
4
123
0.08 (0003)
A
L1
C
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
1.5
0.059 ǒmm
inchesǓ
SCALE 6:1
3.8
0.15
2.0
0.079
6.3
0.248
2.3
0.091
2.3
0.091
2.0
0.079
HE
DIM
A
MIN NOM MAX MIN
MILLIMETERS
1.50 1.63 1.75 0.060
INCHES
A1 0.02 0.06 0.10 0.001
b0.60 0.75 0.89 0.024
b1 2.90 3.06 3.20 0.115
c0.24 0.29 0.35 0.009
D6.30 6.50 6.70 0.249
E3.30 3.50 3.70 0.130
e2.20 2.30 2.40 0.087
0.85 0.94 1.05 0.033
0.064 0.068
0.002 0.004
0.030 0.035
0.121 0.126
0.012 0.014
0.256 0.263
0.138 0.145
0.091 0.094
0.037 0.041
NOM MAX
L1 1.50 1.75 2.00 0.060
6.70 7.00 7.30 0.264
0.069 0.078
0.276 0.287
HE
− −
e1
0°10°0°10°
qq
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent
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