BFP620 NPN Silicon Germanium RF Transistor * High gain low noise RF transistor 3 * Provides outstanding performance 2 4 for a wide range of wireless applications 1 * Ideal for CDMA and WLAN applications * Outstanding noise figure F = 0.7 dB at 1.8 GHz Outstanding noise figure F = 1.3 dB at 6 GHz * Maximum stable gain Gms = 21.5 dB at 1.8 GHz Gma = 11 dB at 6 GHz * Gold metallization for extra high reliability ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFP620 Marking R2s 1=B Pin Configuration 2=E 3=C 4=E - Package - SOT343 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO Value Unit V TA > 0 C 2.3 TA 0 C 2.1 Collector-emitter voltage VCES 7.5 Collector-base voltage VCBO 7.5 Emitter-base voltage VEBO 1.2 Collector current IC 80 Base current IB 3 Total power dissipation1) Ptot 185 mW Junction temperature Tj 150 C Ambient temperature TA -65 ... 150 Storage temperature T stg -65 ... 150 mA TS 95C 1T is measured on the collector lead at the soldering point to the pcb S 2005-10-17 1 BFP620 Thermal Resistance Parameter Symbol Value Unit Junction - soldering point 1) RthJS 300 K/W Electrical Characteristics at TA = 25C, unless otherwise specified Symbol Values Parameter Unit min. typ. max. 2.3 2.8 - V ICES - - 10 A ICBO - - 100 nA IEBO - - 3 A hFE 110 180 270 DC Characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 1 mA, I B = 0 Collector-emitter cutoff current VCE = 7.5 V, V BE = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 0.5 V, IC = 0 DC current gain - IC = 50 mA, VCE = 1.5 V, pulse measured 1For calculation of R thJA please refer to Application Note Thermal Resistance 2005-10-17 2 BFP620 Electrical Characteristics at TA = 25C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. AC Characteristics (verified by random sampling) Transition frequency fT - 65 - Ccb - 0.12 0.2 Cce - 0.22 - Ceb - 0.46 - GHz IC = 50 mA, VCE = 1.5 V, f = 1 GHz Collector-base capacitance pF VCB = 2 V, f = 1 MHz, V BE = 0 , emitter grounded Collector emitter capacitance VCE = 2 V, f = 1 MHz, V BE = 0 , base grounded Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded Noise figure dB F IC = 5 mA, VCE = 1.5 V, f = 1.8 GHz, ZS = ZSopt IC = 5 mA, VCE = 1.5 V, f = 6 GHz, ZS = ZSopt Power gain, maximum stable1) - 0.7 - - 1.3 - G ms - 21.5 - dB G ma - 11 - dB IC = 50 mA, VCE = 1.5 V, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz Power gain, maximum available1) IC = 50 mA, VCE = 1.5 V, ZS = ZSopt, ZL = ZLopt, f = 6 GHz |S21e|2 Transducer gain dB IC = 50 mA, VCE = 1.5 V, ZS = ZL = 50 , f = 1.8 GHz - 20 - f = 6 GHz - 9.5 - IP 3 - 25.5 - P-1dB - 14.5 - Third order intercept point at output2) dBm VCE = 2 V, I C = 50 mA, ZS =ZL=50 , f = 1.8 GHz 1dB Compression point at output IC = 50 mA, VCE = 2 V, ZS =ZL=50 , f = 1.8 GHz 1G 1/2 ma = |S21e / S12e| (k-(k-1) ), Gms = |S21e / S12e| 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 from 0.1 MHz to 6 GHz 2005-10-17 3 BFP620 SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax): Transitor Chip Data: IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = AF = TITF1 0.22 1000 2 2 2 2.707 250.7 1.43 2.4 0.6 0.2 0.5 3 fA V V - 2 -0.0065 - BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = NK = FC = KF = TITF2 fF ps A V ns - 425 0.25 50 10 3.129 0.6 0.75 10 0 0.5 128.1 -1.42 0.8 7.291E-11 1.0E-5 A mA V deg fF - NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM 1.025 21 1 18 1.522 2.364 0.3 1.5 124.9 1 0.52 1.078 298 fA pA mA V fF V eV K All parameters are ready to use, no scalling is necessary. Package Equivalent Circuit: CBS RBS CBCC LCC C BFP620_Chip S B B LBB LBC CBE C RCS E LCB CCS RES CES LEC CBEI CCEI LEB CBEO CCEO T = 25C Itf = 2400* ( 1 - 6.5e-3 * (T-25) + 1.0e-5 * (T-25)^2 ) E For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http//www.infineon.com/silicondiscretes C LBC = LCC = LEC = LBB = LCB = LEB = CBEC = CBCC = CES = CBS = CCS = CCEO = CBEO = CCEI = CBEI = RBS = RCS = RES = 60 50 15 764.5 725.4 259.6 98.4 55.9 140 54 50 106.5 106.7 132.4 99.6 1200 1200 300 pH pH pH pH pH pH fF fF fF fF fF fF fF fF fF Valid up to 6GHz 2005-10-17 4 BFP620 Total power dissipation Ptot = (TS) Permissible Pulse Load RthJS = (t p) 10 3 200 mW 160 K/W RthJS Ptot 140 120 D = 0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 10 2 100 80 60 40 20 0 0 20 40 60 80 100 120 C 10 1 -7 10 150 10 -6 10 -5 10 -4 10 -3 10 -2 C TS 10 tp Permissible Pulse Load Collector-base capacitance Ccb= (VCB) Ptotmax/P totDC = (tp) f = 1MHz 10 1 0.4 Ptotmax / PtotDC pF CCB 0.3 D=0 0.005 0,01 0,02 0,05 0,1 0,2 0,5 0.25 0.2 0.15 0.1 0.05 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 C 10 0 0 0 tp 1 2 3 4 5 V 7 VCB 2005-10-17 5 0 BFP620 Third order Intercept Point IP3=(IC) Transition frequency fT= (IC) (Output, ZS = ZL=50 ) f = 1GHz VCE = parameter, f = 900MHz - VCE = Parameter in V 27 65 GHz 2.3V dBm 55 21 50 45 18 1 fT IP3 1.3 to 2.3 1.8V 15 1.3V 40 35 30 12 0.8V 25 9 0.8 0.5 20 15 6 0.3 10 3 5 0 0 10 20 30 40 50 60 70 80 mA 0 0 100 10 20 30 40 50 60 70 80 mA IC 100 IC Power gain Gma, Gms = (IC) Power Gain Gma, Gms = (f), VCE = 1.5V |S21| = f (f) f = Parameter in GHz VCE = 1.5V, I C = 50mA 55 30 dB dB 0.9 26 45 40 22 G G 24 1.8 35 20 30 2.4 18 Gms 25 3 16 20 14 4 12 8 0 15 5 6 10 10 20 30 40 50 60 70 mA Gma |S21| 10 5 0 90 IC 1 2 3 4 GHz 6 f 2005-10-17 6 BFP620 Power gain Gma, Gms = (VCE) IC = 50mA f = Parameter in GHz 30 0.9 dB 1.8 2.4 20 G 3 4 5 6 15 10 5 0 -5 0.2 0.6 1 1.4 1.8 V 2.6 VCE 2005-10-17 7 Package SOT343 BFP620 Package Outline 0.9 0.1 2 0.2 0.1 MAX. 1.3 0.1 A 1 2 0.1 MIN. 0.15 1.25 0.1 3 2.1 0.1 4 0.3 +0.1 -0.05 +0.1 0.15 -0.05 +0.1 0.6 -0.05 4x 0.1 0.2 M M A Foot Print 1.6 0.8 0.6 1.15 0.9 Marking Layout Manufacturer Pin 1 Date code (Year/Month) 2005, June Type code BGA420 Example Standard Packing Reel o180 mm = 3.000 Pieces/Reel Reel o330 mm = 10.000 Pieces/Reel 0.2 2.3 8 4 Pin 1 2.15 1.1 2005-10-17 8 BFP620 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 Munchen (c) Infineon Technologies AG 2005. 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Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 2005-10-17 9