2005-10-17
BFP620
1
NPN Silicon Germanium RF Transistor
• High gain low noise RF transistor
• Provides outstanding performance
for a wide range of wireless applications
• Ideal for CDMA and WLAN applications
• Outstanding noise figure F = 0.7 dB at 1.8 GHz
Outstanding noise figure F = 1.3 dB at 6 GHz
• Maximum stable gain
Gms = 21.5 dB at 1.8 GHz
Gma = 11 dB at 6 GHz
• Gold metallization for extra high reliability
12
3
4
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFP620 R2s 1=B 2=E 3=C 4=E - - SOT343
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage
TA > 0 °C
T
A
≤ 0 °C
VCEO
2.3
2.1
V
Collector-emitter voltage VCES 7.5
Collector-base voltage VCBO 7.5
Emitter-base voltage VEBO 1.2
Collector current IC80 mA
Base current IB3
Total power dissipation1)
TS ≤ 95°C Ptot 185 mW
Junction temperature T
j
150 °C
Ambient temperature T
A
-65 ... 150
Storage temperature Tst
g
-65 ... 150
1TS is measured on the collector lead at the soldering point to the pcb
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BFP620
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Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point1) RthJS ≤ 300 K/W
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0 V(BR)CEO 2.3 2.8 - V
Collector-emitter cutoff current
VCE = 7.5 V, VBE = 0 ICES - - 10 µA
Collector-base cutoff current
VCB = 5 V, IE = 0 ICBO - - 100 nA
Emitter-base cutoff current
VEB = 0.5 V, IC = 0 IEBO - - 3 µA
DC current gain
IC = 50 mA, VCE = 1.5 V, pulse measured hFE 110 180 270 -
1For calculation of RthJA please refer to Application Note Thermal Resistance
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BFP620
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Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics (verified by random sampling)
Transition frequency
IC = 50 mA, VCE = 1.5 V, f = 1 GHz fT- 65 - GHz
Collector-base capacitance
VCB = 2 V, f = 1 MHz, VBE = 0 ,
emitter grounded
Ccb - 0.12 0.2 pF
Collector emitter capacitance
VCE = 2 V, f = 1 MHz, VBE = 0 ,
base grounded
Cce - 0.22 -
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz, VCB = 0 ,
collector grounded
Ceb - 0.46 -
Noise figure
IC = 5 mA, VCE = 1.5 V, f = 1.8 GHz, ZS = ZSopt
IC = 5 mA, VCE = 1.5 V, f = 6 GHz, ZS = ZSopt
F
-
-
0.7
1.3
-
-
dB
Power gain, maximum stable1)
IC = 50 mA, VCE = 1.5 V, ZS = ZSopt,
ZL = ZLopt , f = 1.8 GHz
Gms - 21.5 - dB
Power gain, maximum available1)
IC = 50 mA, VCE = 1.5 V, ZS = ZSopt,
ZL = ZLopt, f = 6 GHz
Gma - 11 - dB
Transducer gain
IC = 50 mA, VCE = 1.5 V, ZS = ZL = 50 Ω,
f = 1.8 GHz
f = 6 GHz
|S21e|2
-
-
20
9.5
-
-
dB
Third order intercept point at output2)
VCE = 2 V, IC = 50 mA, ZS=ZL=50 Ω, f = 1.8 GHz IP3- 25.5 - dBm
1dB Compression point at output
IC = 50 mA, VCE = 2 V, ZS=ZL=50 Ω, f = 1.8 GHz P-1dB - 14.5 -
1Gma = |S21e / S12e| (k-(k²-1)1/2), Gms = |S21e / S12e|
2IP3 value depends on termination of all intermodulation frequency components.
Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz
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BFP620
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SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax):
Transitor Chip Data:
IS = 0.22 fA
VAF = 1000 V
NE = 2-
VAR = 2V
NC = 2-
RBM = 2.707 Ω
CJE = 250.7 fF
TF = 1.43 ps
ITF = 2.4 A
VJC = 0.6 V
TR = 0.2 ns
MJS = 0.5 -
XTI = 3-
AF = 2 -
TITF1 -0.0065 -
NF = 1.025 -
ISE = 21 fA
NR = 1-
ISC = 18 pA
IRB = 1.522 mA
RC = 2.364 Ω
MJE = 0.3 -
VTF = 1.5 V
CJC = 124.9 fF
XCJC = 1-
VJS = 0.52 V
EG = 1.078 eV
TNOM 298 K
BF = 425 -
IKF = 0.25 A
BR = 50 -
IKR = 10 mA
RB = 3.129 Ω
RE = 0.6 -
VJE = 0.75 V
XTF = 10 -
PTF = 0 deg
MJC = 0.5 -
CJS = 128.1 fF
NK = -1.42 -
FC = 0.8
KF = 7.291E-11
TITF2 1.0E-5
All parameters are ready to use, no scalling is necessary.
Package Equivalent Circuit: LBC = 60 pH
LCC = 50 pH
LEC = 15 pH
LBB = 764.5 pH
LCB = 725.4 pH
LEB = 259.6 pH
CBEC = 98.4 fF
CBCC = 55.9 fF
CES = 140 fF
CBS = 54 fF
CCS = 50 fF
CCEO = 106.5 fF
CBEO = 106.7 fF
CCEI = 132.4 fF
CBEI = 99.6 fF
RBS = 1200 Ω
RCS = 1200 Ω
RES = 300 Ω
B C
E
CCEOCBEO
CCEICBEI
CBE
C
CBCC
S
C
B
E
BFP620_Chip
LBC
LCC
LEC
RBS
RCS
RES
LBB LCB
LEB
Itf = 2400* ( 1 - 6.5e-3 * (T-25) + 1.0e-5 * (T-25)^2 )
T = 25°C
CBS
CES
CCS
Valid up to 6GHz
For examples and ready to use parameters
please contact your local Infineon Technologies
distributor or sales office to obtain a Infineon
Technologies CD-ROM or see Internet:
http//www.infineon.com/silicondiscretes
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Total power dissipation Ptot = ƒ(TS)
0 20 40 60 80 100 120 °C 150
TS
0
20
40
60
80
100
120
140
160
mW
200
Ptot
Permissible Pulse Load RthJS = ƒ(tp)
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0
°C
tp
1
10
2
10
3
10
K/W
RthJS
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.005
0
Permissible Pulse Load
Ptotmax/PtotDC = ƒ(tp)
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0
°C
tp
0
10
1
10
Ptotmax/ PtotDC
D = 0
0.005
0,01
0,02
0,05
0,1
0,2
0,5
Collector-base capacitance Ccb= ƒ(VCB)
f = 1MHz
012345V7
VCB
0
0.05
0.1
0.15
0.2
0.25
0.3
pF
0.4
CCB
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Third order Intercept Point IP3=ƒ(IC)
(Output, ZS = ZL=50 Ω)
VCE = parameter, f = 900MHz -
0 10 20 30 40 50 60 70 80 mA 100
IC
0
3
6
9
12
15
18
21
dBm
27
IP3
0.8V
1.3V
1.8V
2.3V
Transition frequency fT= ƒ(IC)
f = 1GHz
VCE = Parameter in V
0 10 20 30 40 50 60 70 80 mA 100
IC
0
5
10
15
20
25
30
35
40
45
50
55
GHz
65
fT
0.3
0.5 0.8
1
1.3 to 2.3
Power gain Gma, Gms = ƒ(IC)
VCE = 1.5V
f = Parameter in GHz
0 10 20 30 40 50 60 70 mA 90
IC
8
10
12
14
16
18
20
22
24
26
dB
30
G
0.9
1.8
2.4
3
4
5
6
Power Gain Gma, Gms = ƒ(f),
|S21|² = f (f)
VCE = 1.5V, IC = 50mA
01234GHz 6
f
5
10
15
20
25
30
35
40
45
dB
55
G
|S21|²
Gms
Gma
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BFP620
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Power gain Gma, Gms = ƒ (VCE)
IC = 50mA
f = Parameter in GHz
0.2 0.6 1 1.4 1.8 V2.6
VCE
-5
0
5
10
15
20
dB
30
G
0.9
1.8
2.4
3
4
5
6
2005-10-17
BFP620
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Package SOT343
Package Outline
Foot Print
Marking Layout
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
Pin 1
Manufacturer
Date code (Year/Month)
Type code
2005, June
BGA420
Example
0.2
4
2.15
8
2.3
1.1
Pin 1
0.6
0.8
1.6
1.15
0.9
1.25
±0.1
0.1 MAX.
2.1
±0.1
0.15 +0.1
-0.05
0.3+0.1
2±0.2 ±0.1
0.9
12
34 A
+0.1
0.6 A
M
0.2
1.3
-0.05
-0.05
0.15
0.1 M
4x
0.1
0.1 MIN.
2005-10-17
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Published by Infineon Technologies AG,
St.-Martin-Strasse 53,
81669 München
© Infineon Technologies AG 2005.
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be
considered as a guarantee of characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of
non-infringement, regarding circuits, descriptions and charts stated herein.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office (www.Infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon
Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that life-support
device or system, or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body, or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be endangered.
