1
P4
Item Symbol Ratings Unit
Drain-source voltage V DS 900
VDSX *5 900
Continuous drain current ID±7
Pulsed drain current ID(puls] ±28
Gate-source voltage VGS ±30
Repetitive or non-repetitive IAR *2 7
Maximum Avalanche Energy E AS *1 269.5
Maximum Drain-Source dV/dt dVDS/dt *4 40
Peak Diode Recovery dV/dt dV/dt *3 5
Max. power dissipation PD Ta=25°C 1.67
Tc=25°C 225
Operating and storage Tch +150
temperature range Tstg
Electrical characteristics (Tc =25°C unless otherwise specified)
Thermalcharacteristics
2SK3674-01L,S,SJ
FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item Symbol Test Conditions
Zero gate voltage drain current IDSS VDS=900V VGS=0V
VDS=720V VGS=0V
VGS=±30V
ID=3.5A
ID=3.5A VDS=25V
VCC=600V ID=3.5A
VGS=10V
RGS=10 Ω
Min. Typ. Max. Units
V
V
µA
nA
Ω
S
pF
nC
A
V
µs
µC
ns
Min. Typ. Max. Units
Thermal resistance Rth(ch-c) channel to case
Rth(ch-a) channel to ambient 0.560
75.0 °C/W
°C/W
Symbol
V(BR)DSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Item
Drain-source breakdown voltaget
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
ID=250µA VGS=0V
ID= 250µA VDS=VGS
Tch=25°C
Tch=125°C
VDS=0V
VDS=25V
VGS=0V
f=1MHz
VCC=450V
ID=7A
VGS=10V
L=10.1mH Tch=25°C
IF=7A VGS=0V Tch=25°C
IF=7A VGS=0V
-di/dt=100A/µs Tch=25°C
V
V
A
A
V
A
mJ
kV/µs
kV/µs
W
°C
°C
900
3.0 5.0
25
250
100
1.54 2.00
4.1 8.2
920 1380
115 175
6.6 10
22 33
8.0 12
45 67.5
10.5 16
25 37.5
46
8.5 13
70.90 1.50
2.6
8.0
-55 to +150
Outline Drawings [mm]
*3 IF=-ID, -di/dt=50A/µs, Vcc=BVDSS, Tch=150°C
<<<
Equivalent circuit schematic
Gate(G)
Source(S)
Drain(D)
Super F AP-G Series
VGS=10V
200304
*4 VDS 900V *5 VGS=-30V
=
<
*1 L=10.1mH, Vcc=90V,Tch=25°C, See to Avalanche Energy Graph *2 Tch=150°C
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2
Characteristics
2SK3674-01L,S,SJ FUJI POWER MOSFET
0 255075100125150
0
50
100
150
200
250
Allowable Power Dissipati o n
PD=f(Tc)
PD [W]
Tc [°C] 0 5 10 15 20
0
2
4
6
8
10 20V 7.0V
10V
8.0V
6.5V
6.0V
ID [A]
VDS [V]
Typical Output Characteristi c s
ID=f(VDS):80 µs pulse test,Tch=25°C
VGS=5.5V
012345678910
0.1
1
10
ID[A]
VGS[V]
Typical Transfer Characteristic
ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25°C
0.1 1 10
1
10
100
gfs [S]
ID [A]
Typical Transc onductanc e
gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25°C
0246810
1.4
1.5
1.6
1.7
1.8
1.9
2.0
2.1
7.0V
6.5V
RDS(on) [ Ω ]
ID [A]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80 µs pulse test,Tch=25°C
10V
20V
8.0V
6.0V
VGS=5.5V
-50 -25 0 25 50 75 100 125 150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
RDS(o n) [ Ω ]
Tch [°C]
typ.
max.
Drain-Source On -state Resistance
RDS(on)=f(Tch):ID=3.5A,VGS=10V
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3
2SK3674-01L,S,SJ FUJI POWER MOSFET
-50 -25 0 25 50 75 100 125 150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
max.
min.
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250µA
VGS(th) [V]
Tch [°C] 0 5 10 15 20 25 30 35
0
2
4
6
8
10
12
Qg [nC]
Typical Gate Charge Charact eri s t i cs
VGS=f(Qg):ID=7A,Tch=25°C
VGS [V]
720V
450V
Vcc= 180V
100101102
10-3
10-2
10-1
100
101
C [nF]
VDS [V]
Typical Capacitanc e
C=f(VDS):VGS=0V,f=1MHz
Crss
Coss
Ciss
0.00 0.25 0.50 0.75 1.00 1.25 1.50
0.1
1
10
IF [A]
VSD [V]
Typical Forward Charact eri s ti c s of Reverse Diode
IF=f(VSD):80 µs pulse test,Tch=25°C
10-1 100101
100
101
102
103
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=600V,VGS=10V,RG=10 Ω
td(on)
tr
tf
td(off)
t [ns]
ID [A] 0 25 50 75 100 125 150
0
200
400
600
800
IAS=3A
IAS=7A
IAS=4A
EAS [mJ]
starting Tch [ °C]
Maximum Avalanche Energy vs. s tar ti ng Tch
E(AS)=f( s tarting Tch):Vcc=90V
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4
2SK3674-01L,S,SJ FUJI POWER MOSFET
10-8 10-7 10-6 10-5 10-4 10-3 10-2
10-2
10-1
100
101
102
Single Pulse
Maximum Avalanche Current Pulsewidth
IAV=f(tAV):starting Tch=25°C,Vcc=90V
Avalanche Curre nt I AV [A]
tAV [sec]
10-6 10-5 10-4 10-3 10-2 10-1 100
10-3
10-2
10-1
100
101
Maximum Transient Thermal Impedance
Zth(ch-c)=f(t):D=0
Zth(ch-c) [°C/W]
t [sec]
http://www.fujielectric.co.jp/denshi/scd/
Outline Drawings (mm)
Type(S) Type(SJ)
1 2 3 1
2
3
Type(L)
1
2
3
1 2 3
4
4
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