1
Features
Flat window design which is suited to optical systems
Low dark current : ICEO = 5 nA (typ.)
Fast response : tr, tf = 3 µs (typ.)
Wide directional sensitivity
Base pin for easy circuit design (PNZ102F)
Phototransistors
PNA1401LF, PNZ102F
Silicon NPN Phototransistors
For optical control systems
Absolute Maximum Ratings (Ta = 25˚C)
Parameter Symbol Ratings Unit
Collector to emitter voltage
VCEO 30 V
Collector to base voltage
VCBO*40 V
Emitter to collector voltage
VECO 5V
Emitter to base voltage
VEBO*5V
Collector current IC50 mA
Collector power dissipation
PC150 mW
Operating ambient temperature
Topr –25 to +85 ˚C
Storage temperature Tstg –30 to +100 ˚C
* PNZ102F only
1: Emitter
2: Collector
Unit : mm
ø4.6±0.15 Glass window
2.54±0.25
1.0±0.2
1.0±0.15
ø5.75 max.
2-ø0.45±0.05
4.5±0.2
12.7 min.
45±3˚
12
PNA1401LF
1: Emitter
2: Base
3: Collector
Unit : mm
ø4.6±0.15 Glass window
2.54±0.25
1.0±0.2
1.0±0.15
ø5.75 max.
3-ø0.45±0.05
4.5±0.2
12.7 min.
45±3˚
1
3
2
PNZ102F
2
PNA1401LF, PNZ102F Phototransistors
,,
,,
,
,
50ΩR
L
t
d
: Delay time
t
r
: Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
t
f
: Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
V
CC
Sig.OUT
Sig.IN (Input pulse)
(Output pulse) 10%
90%
t
d
t
r
t
f
P
C
— Ta
200
160
120
80
40
Ambient temperature Ta (˚C )
Collector power dissipation P
C
(mW)
0 20406080100
0
– 20
I
CE(L)
— V
CE
2.0
1.6
1.2
0.4
0.8
0
Collector to emitter voltage V
CE
(V)
Collector photo current I
CE(L)
(mA)
0 8 16 24 32
I
CE(L)
— L
10
1
10
–1
10
–2
Illuminance L (lx)
Collector photo current I
CE(L)
(mA)
10 10
2
10
3
10
–3
1
V
CE
= 10V
Ta = 25˚C
T = 2856K
L = 50 lx
100 lx
200 lx
300 lx
400 lx
500 lx
600 lx
700 lx
800 lx
900 lx
1000 lx
Electro-Optical Characteristics (Ta = 25˚C)
Parameter Symbol Conditions min typ max Unit
Dark current ICEO VCE = 10V 5 300 nA
Collector photo current ICE(L) VCE = 10V, L = 100 lx*1 0.1 0.3 mA
Peak sensitivity wave length
λPVCE = 10V 800 nm
Acceptance half angle θ
Measured from the optical axis to the half power point
40 deg.
Response time tr, tf*2 VCC = 10V, I CE(L) = 5mA, R L = 100Ω3µs
Collector saturation voltage
VCE(sat) L = 500 lx*1
PNA1401LF I
CE(L)
= 0.1mA
0.2 0.4 V
PNZ102F I
CE(L)
= 0.1mA
*1 Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.
*2 Switching time measurement circuit
3
Phototransistors PNA1401LF, PNZ102F
0˚ 10˚ 20˚
30˚
40˚
50˚
60˚
70˚
80˚
90˚
Directivity characteristics
ICEO — Ta
10 3
10
1
10 2
Ambient temperature Ta (˚C )
VCE = 10V
Dark current ICEO (nA)
10 –1
– 40 0 40 80 120
VCE = 10V
T = 2856K
ICE(L) — Ta
10
10 –1
1
Ambient temperature Ta (˚C )
Collector photo current ICE(L) (mA)
– 40 0 40 80 120
10 –2
Spectral sensitivity characteristics
100
80
60
40
20
Wavelength λ (nm)
Relative sensitivity S (%)
400 600 800 1000 1200
0
200
Ta = 25˚C
tr — ICE(L)
Collector photo current ICE(L) (mA)
Rise time tr (µs)
VCC = 10V
Ta = 25˚C
10 3
10 2
10
1
10 –1
10 –1 10 10 2
1
10 –2
10 –2
tf — ICE(L)
Collector photo current ICE(L) (mA)
Fall time tf (µs)
VCC = 10V
Ta = 25˚C
10 3
10 2
10
1
10 –1
10 –1 10 10 2
1
10 –2
10 –2
20
90
100
80
70
60
50
40
30
Relative sensitivity S (%)
I = 500 lx
100 lx
500Ω
100Ω
RL = 1kΩRL = 1kΩ
500Ω
100Ω
