TIP107
Power Darlington Transistors
Page 1 11/05/08 V1.1
Feature:
••PNP Plastic Power Darlington Transistors for Linear and Switching
Applications.
TO-220 Plastic Package
Dimensions Minimum Maximum
A 14.42 16.51
B 9.63 10.67
C 3.56 4.83
D - 0.90
E 1.15 1.40
F 3.75 3.88
G 2.29 2.79
H 2.54 3.43
J - 0.56
K 12.70 14.73
L 2.80 4.07
M 2.03 2.92
N - 31.24
O 7°
Dimensions : Millimetres
Pin Configuration:
1. Base
2. Collector
3. Emitter
4. Collector
TIP107
Power Darlington Transistors
Page 2 11/05/08 V1.1
Absolute Maximum Ratings
Parameters Symbol - TIP107 Unit
Collector-Base Voltage (Open Emitter) VCBO
Maximum
100 V
Collector Emitter Voltage (Open Base) VCEO
Collector Current IC8.0 A
Total Power Dissipation upto TC= 25°C Ptot 80 W
Junction Temperature Tj150 °C
Collector-Emittert Saturation Voltage
IC= 3A, IB= 6mA VCE (sat) 2.0 V
DC Current Gain
IC= 3A; VCE = 4V hFE Minimum
Maximum 1.0
20 -
Ratings (at Tamb = 25°C unless otherwise specified)
Collector-Base Voltage (Open Emitter) VCBO
Maximum
100 VCollector Emitter Voltage (Open Base) VCEO
Emitter-Base Voltage (Open Collector) VEBO 5.0
Collector Current IC8.0
ACollector Peak Current ICM 15
Base Current IB1.0
Total Power Dissipation upto TC= 25°C
Derate above 25°C Ptot
80
0.64 W
W/°C
Total Power Dissipation upto TA= 25°C
Derate above 25°C 2.0
0.016
Junction Temperature Tj150 °C
Storage Temperature Tstg -65 to +150
Thermal Resistance
From Junction to Ambient Rth (j-a) - 62.5 °C/W
From Junction to Case Rth (j-c) - 1.56
Characteristics (Tamb = 25°C unless otherwise specified)
Collector Cut off Current
IB= 0; VCE = 50V
IE = 0; VCB = 100V
ICEO
ICBO Maximum
50
50 µA
Emitter Cut off Current
IC= 0; VEB = 5V IEBO 8 mA
Breakdown Voltages
IC= 30mA; IB= 0
IC= 1mA; IE= 0
IE= 1mA; IC= 0
VCEO (sus)*
VCBO
VEBO
Minimum 100
100
5.0 V
TIP107
Power Darlington Transistors
Page 3 11/05/08 V1.1
Characteristics (Tamb = 25°C unless otherwise specified)
* Pulsed : Pulse Duration = 300µs; Duty Cycle ≤2%.
Specifications
VCEO
Maximum
(V)
VCBO
Maximum
(V)
IC (av)
Maximum
(A)
hFE
Minimum
at IC= 3A Package Type Part Number
100 100 8.0 1.0 T0-220 PNP TIP107
Parameters Symbol TIP107 Unit
Saturation Voltages
IC= 3A; IB= 6mA
IC= 8A; IB= 80mA VCE (sat)*
Maximum
2.0
2.5 V
Base-Emitter on Voltage
IC= 8A; VCE = 4V VBE (on)* 2.8
DC Current Gain
IC= 3A; VCE = 4V
IC= 8A; VCE = 4V hFE* Minimum
Maximum
Minimum
1.0
20
200 -
Small Signal Current Gain
IC= 3A; VCE = 4V; f = 1.0MHz |hfe|Minimum 4.0 -
Output Capacitance
IE= 0; VCB = 10V; f = 0.1MHz COMaximum 300 pF
Forward Voltage of Commutation Diode
IF= -IC= 10A; IB= 0 VF* Minimum 2.8 V
For enquiries from all other markets
TIP107
Power Darlington Transistors
Page <4> 11/05/08 V1.1
Notes:
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