
FEATURES
•WIDEBAND RESPONSE:
fu = 2.9 GHz TYP at 3dB bandwidth
•NOISE FIGURE:
NF = 2.3 dB TYP at f = 1.5 GHz
•POWER GAIN:
GP = 20.5 dB TYP at f = 1.5 GHz
•SUPPLY VOLTAGE:
VCC = 4.5 to 5.5 V
•HIGH DENSITY SURFACE MOUNTING:
6-pin super mini-mold package
UPC3215TB
5V, SUPER MINIMOLD
BIPOLAR ANALOG INTEGRATED CIRCUIT
SI MMIC WIDEBAND AMPLIFIER
V
CC
= 5.0 V
P
IN
= -30 dBm
25
1.00.30.1
20
15
10
5
0
3.0
Frequency, f (GHz)
G ,niaG
S
)Bd(
INSERTION POWER GAIN
vs. FREQUENCY
DESCRIPTION
The UPC3215TB is a Silicon Monolithic IC designed as a
wideband amplifier. The UPC3215TB is suitable for systems
requiring wideband operation from HF to L band.
This IC is manufactured using a 30 GHz fmax UHS0
(Ultra High Speed Process) silicon bipolar process. The pack-
age is 6-pin super minimold suitable for surface mount.
The UPC3215TB is manufactured according to stringent
quality assurance standards to ensure highest reliability
and consistent superior performance.
APPLICATIONS
•Systems requiring wideband operation from HF to L band.
•DBS receivers and tuners
ELECTRICAL CHARACTERISTICS (TA = 25°C, VCC = 5.0 V, ZS = ZL = 50 Ω)
BT5123CPUREBMUN TRAP
60SENILTUO EGAKCAP
SEULAV ECNEREFERSCITSIRETCARAHC DRADNATSSLOBMYS
PSAT Saturated Output Power, PIN 5.3+mBdmBd 0 =
OIP3Output Intercept Point f1 = 1.5 GHz, f201+mBdzHG 105.1 =
ΔGP0.1BdzHG 51.2 ot 1.0 = f,ssentalF niaG
ELECTRICAL CHARACTERISTICS (TA = 25°C, VCC = 5.0 V, ZS = ZL = 50 Ω)
BT5123CPUREBMUN TRAP
60SENILTUO EGAKCAP
XAMPYTNIMSTINUSNOITIDNOC DNA SRETEMARAPSLOBMYS
ICC 5.710.415.01Am)langis on( tnerruC tiucriC
GPP ,zHG 5.1 = f,niaG rewoP IN -5.025.81BdmBd 03- =
0.33.2-BdzHG 5.1 = f,erugiF esioNFN
fuUpper Limit Operating Frequency (The gain at fu is 3 dB down from the gain at 100 MHz) GHz 2.5 2.9 -
-4493BdzHG 5.1 = f,noitalosILOSI
RLIN -5101BdzHG 5.1 = f,ssoL nruteR tupnI
RLOUT -5.95.6BdzHG 5.1 = f,ssoL nruteR tuptuO
P1dB-5.1-4-mBdzHG 5.1 = f,tnioP noisserpmoC Bd 1