CHA4092
Ref. : DSCHA40928021 1/4Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
20-30GHz High Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA4092 is a high gain broadband three-
stage balanced monolithic power amplifier. It is
designed for a wide range of applications, from
military to commercial communication systems.
The circuit is manufactured with a PM-HEMT
process, 0.25µm gate length, via holes through
the substrate, air bridges and electron beam
gate lithography.
It is available in chip form.
Main Features
þ Broadband performances : 20-30GHz
þ 22 dBm output power ( 1dB gain comp. )
þ 17 dB ± 1.5 dB gain
þ Chip size : 1.65 X 2.15 X 0.10 mm
Typical on wafer measurements :
-30
-25
-20
-15
-10
-5
0
5
10
15
20
15 20 25 30 35
Frequency (GHz)
(dB)
Gain
OUT
IN
Main Characteristics
Tamb. = 25°C
Symbol Parameter Min Typ Max Unit
Fop Operating frequency range 20 30 GHz
GSmall signal gain 16 17 dB
P1dB Output power at 1dB gain compression 22 dBm
Id Bias current 700 900 mA
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
CHA4092 20-30GHz High Power Amplifier
Ref. : DSCHA40928021 2/4Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Electrical Characteristics for Broadband Operation
Tamb = +25°C, Vd1,2,3 = 3.5Volts
Symbol Parameter Min Typ Max Unit
Fop Operating frequency range (1) 20 30 GHz
GSmall signal gain (1) (2) 16 17 dB
∆GSmall signal gain flatness (1) (2) ± 1.5 dB
Is Reverse isolation (1) 30 dB
P1db Pulsed Output power at 1dB gain compression (1) 22 dBm
VSWRin Input VSWR (1) 2.0:1
VSWRout Output VSWR (1) 2.0:1
Id Bias current 700 900 mA
(1) These values are representative of on-wafer measurements that are made without bonding
wires at the RF ports. In the case of a jig or a module CW mode operation, the typical
output power may be around 2dB less.
(2) Vd1,2,3 = 2Volts
Absolute Maximum Ratings
Tamb. = 25°C (1)
Symbol Parameter Values Unit
Vd Drain bias voltage 4V
Id Drain bias current 1200 mA
Vg Gate bias voltage -2 to +0.4 V
Ta Operating temperature range -40 to +85 °C
Tstg Storage temperature range -55 to +155 °C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
20-30GHz High Power Amplifier CHA4092
Ref. : DSCHA40928021 3/4Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Bias Conditions : Tamb = +25°C, Vd = 3.5Volt, Vg = -0.2Volt.
-20
-15
-10
-5
0
5
10
15
20
25
15 20 25 30 35
Frequency (GHz)
(dB)
Gain
OUT
IN
0
4
8
12
16
20
24
-15 -10 -5 0 5 10
Input power (dBm)
Freq= 20 GHz
Gain (dB)
Pout (dBm)
0
4
8
12
16
20
24
-15 -10 -5 0 5
Input power (dBm)
Freq= 24 GHz
Gain (dB)
Pout (dBm)
0
4
8
12
16
20
24
-15 -10 -5 0 5
Input power (dBm)
Freq= 30 GHz
Gain (dB)
Pout (dBm)
CHA4092 20-30GHz High Power Amplifier
Ref. : DSCHA40928021 4/4Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Chip Assembly and Mechanical Data
Note : Supply feed should be capacitively bypassed.
Bonding pad positions.
Ordering Information
:CHA4092-99F/00
united monolithic semiconductors
S.A.S. assumes no responsability for the consequences of use of such information nor for any infringement of
patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of united monolithic semiconductors S.A.S.. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. United monolithic semiconductors S.A.S. products are not authorised for
use as critical components in life support devices or systems without express written approval from united
monolithic semiconductors S.A.S.