TECHNICAL DATA
PNP MEDIUM POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/561
Devices Qualified Level
2N6193
JAN, JANTX
JANTXV
MAXIMUM RATINGS
Ratings Symbol 2N6193 Units
Collector-Emitter Voltage VCEO 100 Vdc
Collector-Base Voltage VCBO 100 Vdc
Emitter-Base Voltage VEBO 6.0 Vdc
Collector Current IC 5.0 Adc
Base Current IB 1.0 Adc
Total Power Dissipation @ TA = +250C(1)
@ TC = +250C(2) PT 1.0
10 W
W
Operating & Storage Temperature Range Top, Tstg -65 to +200 0C
THERMAL CHARACTERISTICS
Characteristics Symbol Max. Unit
Thermal Resistance, Junction-to-Case RθJC 17.5 0C/W
1) Derate linearly 5.71mW/0C for TA > +250C
2) Derate linearly 57.1mW/0C for TC > +250C
TO-39*
(TO-205AD)
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage
IC = 50 mAdc VCEO(sus) 100 Vdc
Collector-Emitter Cutoff Current
VCE = 100 Vdc ICEO
100 µAdc
Emitter-Base Cutoff Current
VEB = 6.0 Vdc IEBO 100 µAdc
Collector-Emitter Cutoff Current
VCE = 90 Vdc, VBE = 1.5 Vdc ICEX
10 µAdc
Collector-Base Cutoff Current
VCB = 100 Vdc ICBO 10 µAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
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2N6193 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics Symbol Min. Max. Unit
ON CHARACTERISTICS (3)
DC Current Gain
IC = 0.5 Adc, VCE = 2.0 Vdc
IC = 2.0 Adc, VCE = 2.0 Vdc
IC = 5.0 Adc, VCE = 2.0 Vdc
hFE
60
60
40
240
Collector-Emitter Saturation Voltage
IC = 2.0 Adc, IB = 0.2 Adc
IC = 5.0 Adc, IB = 0.5 Adc
VCE(sat)
0.7
1.2 Vdc
Base-Emitter Saturation Voltage
IC = 2.0 Adc, IB = 0.2 Adc
IC = 5.0 Adc, IB = 0.5 Adc
VBE(sat)
1.2
1.8 Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short Circuit
Forward-Current Transfer Ratio
IC = 0.5 Adc, VCE = 10 Vdc, f = 10 MHz
hfe 3.0 15
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz Cobo 300 pF
Output Capacitance
VBE = 2.0 Vdc, IC = 0, 100 kHz ≤ f ≤ 1.0 MHz Cibo 1250 pF
SWITCHING CHARACTERISTICS
Delay Time VCC = -40 Vdc, VBE(off) = 3.0 Vdc td 100 ηs
Rise Time IC = 2.0 Adc, IB1= 0.2 Adc tr 100 ηs
Storage Time VCC = -40 Vdc IC = 2.0 Adc, ts 2.0 µs
Fall Time IB1 = -IB2 = 0.2 Adc tf 200 ηs
SAFE OPERATING AREA
DC Tests
TC = +250C, 1 Cycle, t ≥ 0.5 s
Test 1
VCE = 2.0 Vdc, IC = 5.0 Adc
Test 2
VCE = 90 Vdc, IC = 55 mAdc
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 12010
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