NVMFS6B14N Power MOSFET 100 V, 15 mW, 55 A, Single N-Channel Features * * * * * * Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS6B14NWF - Wettable Flank Option for Enhanced Optical Inspection AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free and are RoHS Compliant www.onsemi.com V(BR)DSS RDS(ON) MAX ID MAX 100 V 15 mW @ 10 V 55 A MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current RqJC (Notes 1, 2, 3) Power Dissipation RqJC (Notes 1, 2) Continuous Drain Current RqJA (Notes 1, 2, 3) Power Dissipation RqJA (Notes 1 & 2) Pulsed Drain Current TC = 25C Steady State Symbol Value Unit VDSS 100 V VGS 16 V ID 55 A TC = 100C TC = 25C Steady State PD ID Operating Junction and Storage Temperature Source Current (Body Diode) Single Pulse Drain-to-Source Avalanche Energy (TJ = 25C, VDD = 50 V, VGS = 10 V, IL(pk) = 24 A, L = 0.1 mH, RG = 25 W) Lead Temperature for Soldering Purposes (1/8 from case for 10 s) N-CHANNEL MOSFET A 11 PD MARKING DIAGRAM W 3.8 D 1.9 1 IDM 140 A TJ, Tstg -55 to + 175 C IS 60 A EAS 29 mJ TL 260 C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. DFN5 (SO-8FL) CASE 488AA STYLE 1 A Y W ZZ S S S G D XXXXXX AYWZZ D D = Assembly Location = Year = Work Week = Lot Traceability ORDERING INFORMATION See detailed ordering, marking and shipping information on page 5 of this data sheet. THERMAL RESISTANCE MAXIMUM RATINGS Parameter S (1,2,3) 8.0 TA = 100C TA = 25C, tp = 10 ms W 94 47 TA = 100C TA = 25C G (4) 39 TC = 100C TA = 25C D (5,6) Symbol Value Unit Junction-to-Case - Steady State RqJC 1.6 C/W Junction-to-Ambient - Steady State (Note 2) RqJA 40 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Surface-mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. (c) Semiconductor Components Industries, LLC, 2015 October, 2015 - Rev. 0 1 Publication Order Number: NVMFS6B14N/D NVMFS6B14N ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise specified) Parameter Symbol Test Condition Min Drain-to-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 100 Drain-to-Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current V 80 VGS = 0 V, VDS = 80 V mV/C TJ = 25C 10 TJ = 125C 100 IGSS VDS = 0 V, VGS = 16 V VGS(TH) VGS = VDS, ID = 250 mA mA 100 nA 4.0 V ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Negative Threshold Temperature Coefficient VGS(TH)/TJ Drain-to-Source On Resistance RDS(on) 2.0 -8.5 VGS = 10 V ID = 20 A 12.2 mV/C 15 mW CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance CISS 1300 Output Capacitance COSS Reverse Transfer Capacitance CRSS 18 Total Gate Charge QG(TOT) 20 Threshold Gate Charge QG(TH) 2.2 Gate-to-Source Charge QGS Gate-to-Drain Charge QGD 6.5 Plateau Voltage VGP 5.4 V Gate Resistance RG 1.0 W VGS = 0 V, f = 1 MHz, VDS = 50 V VGS = 10 V, VDS = 50 V; ID = 20 A TJ = 25C 260 pF nC 6.4 SWITCHING CHARACTERISTICS (Note 5) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(ON) tr td(OFF) 9.6 VGS = 10 V, VDS = 50 V, ID = 20 A, RG = 1.0 W tf 39 ns 16.6 6.8 DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD TJ = 25C 0.83 TJ = 125C 0.8 tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 20 A 1.2 V 45 VGS = 0 V, dIS/dt = 100 A/ms, IS = 20 A QRR 23 ns 22 50 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NVMFS6B14N TYPICAL CHARACTERISTICS 100 100 VGS = 10 V 6.5 V 60 6.0 V 40 5.5 V 4.0 V 5.0 V 1.0 0.5 2.0 1.5 2.5 70 60 50 40 30 TJ = 25C 20 3.0 TJ = 125C 0 6 5 Figure 2. Transfer Characteristics ID = 20 A TJ = 25C 36 28 20 12 4 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10 VGS, GATE VOLTAGE (V) 7 8 30 TJ = 25C 27 24 VGS = 6.0 V 21 18 15 VGS = 10 V 12 9 6 3 10 15 25 20 30 ID, DRAIN CURRENT (A) Figure 3. On-Resistance vs. Gate-to-Source Voltage Figure 4. On-Resistance vs. Drain Current and Gate Voltage 100K 2.2 TJ = 150C ID = 20 A VGS = 10 V 10K IDSS, LEAKAGE (nA) RDS(on), NORMALIZED DRAIN-TO- SOURCE RESISTANCE 4 Figure 1. On-Region Characteristics 44 1.8 3 2 VGS, GATE-TO-SOURCE VOLTAGE (V) 52 2.0 1 TJ = -55C VDS, DRAIN-TO-SOURCE VOLTAGE (V) RDS(on), DRAIN-TO-SOURCE RESISTANCE (mW) 0 80 10 0 4.5 V 0 RDS(on), DRAIN-TO-SOURCE RESISTANCE (mW) ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 80 20 VDS 10 V 90 7.0 V 1.6 1.4 1.2 1.0 0.8 TJ = 125C 1K 100 TJ = 25C 10 0.6 0.4 -50 -25 1 0 25 50 75 100 125 150 175 10 20 30 40 50 60 70 80 90 TJ, JUNCTION TEMPERATURE (C) VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current vs. Voltage www.onsemi.com 3 100 NVMFS6B14N TYPICAL CHARACTERISTICS VGS, GATE-TO-SOURCE VOLTAGE (V) C, CAPACITANCE (pF) Ciss 1000 Coss Crss 100 VGS = 0 V TJ = 25C f = 1 MHz 10 11 1 1 10 9 8 7 5 4 3 TJ = 25C VDS = 50 V ID = 20 A 2 1 0 2 0 100 4 6 8 10 12 14 16 20 18 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate-to-Source and Drain-to-Source Voltage vs. Total Charge 20 VDS = 50 V ID = 20 A VGS = 10 V IS, SOURCE CURRENT (A) 18 100 tr td(off) td(on) tf TJ = 25C 16 14 12 10 8 6 4 2 1 1 10 0 100 0.3 0.4 0.5 0.6 0.7 0.8 0.9 RG, GATE RESISTANCE (W) VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 1000 ID, DRAIN CURRENT (A) t, TIME (ns) Qgd Qgs 6 1000 10 QT 10 100 VGS 10 V Single Pulse TC = 25C 500 ms 10 1 ms 1 10 ms RDS(on) Limit Thermal Limit Package Limit 0.1 0.01 0.1 1 10 100 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 11. Maximum Rated Forward Biased Safe Operating Area www.onsemi.com 4 NVMFS6B14N TYPICAL CHARACTERISTICS 100 35 IPEAK, DRAIN CURRENT (A) GFS, SMALL-SIGNAL FORWARD TRANSFER CONDUCTANCE (S) 40 30 25 20 15 10 5 0 10 25C 100C 1 0 5 10 15 20 25 30 35 40 45 50 0.0001 0.01 0.001 ID, DRAIN CURRENT (A) TAV, TIME IN AVALANCHE (sec) Figure 12. GFS vs. ID Figure 13. IPEAK vs. TAV 100 50% Duty Cycle R(t) (C/W) 10 1 20% 10% 5% 2% 1% 0.1 NTMFS6B14N, 650 mm2, Cu Single Layer Pad Single Pulse 0.01 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE TIME (sec) Figure 14. Thermal Response DEVICE ORDERING INFORMATION Device NVMFS6B14NT1G NVMFS6B14NWFT1G NVMFS6B14NT3G NVMFS6B14NWFT3G Marking Package Shipping 6B14N DFN5 (Pb-Free) 1500 / Tape & Reel 6B14WF DFN5 (Pb-Free, Wettable Flanks) 1500 / Tape & Reel 6B14N DFN5 (Pb-Free) 5000 / Tape & Reel 6B14WF DFN5 (Pb-Free, Wettable Flanks) 5000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DFN5 5x6, 1.27P (SO-8FL) CASE 488AA ISSUE N 1 DATE 25 JUN 2018 SCALE 2:1 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D A 2 B D1 2X 0.20 C 4X E1 2 q E c 1 2 3 A1 4 TOP VIEW C DETAIL A 0.10 C SEATING PLANE A 0.10 C SIDE VIEW MILLIMETERS MIN NOM MAX 0.90 1.00 1.10 0.00 --- 0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.00 5.15 5.30 4.70 4.90 5.10 3.80 4.00 4.20 6.00 6.30 6.15 5.70 5.90 6.10 3.45 3.65 3.85 1.27 BSC 0.51 0.575 0.71 1.20 1.35 1.50 0.51 0.575 0.71 0.125 REF 3.00 3.40 3.80 0_ --- 12 _ DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q GENERIC MARKING DIAGRAM* DETAIL A 1 0.10 b C A B 0.05 c 8X XXXXXX AYWZZ e/2 e L 1 4 K RECOMMENDED SOLDERING FOOTPRINT* E2 PIN 5 (EXPOSED PAD) L1 M 2X 0.495 4.560 2X 1.530 G D2 2X BOTTOM VIEW XXXXXX = Specific Device Code A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability *This information is generic. Please refer to device data sheet for actual part marking. Pb-Free indicator, "G" or microdot " G", may or may not be present. Some products may not follow the Generic Marking. 0.475 3.200 4.530 STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 1.330 STYLE 2: 2X PIN 1. ANODE 0.905 2. ANODE 3. ANODE 4. NO CONNECT 0.965 5. CATHODE 1 4X 1.000 4X 0.750 1.270 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON14036D DFN5 5x6, 1.27P (SO-8FL) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped "CONTROLLED COPY" in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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