1 www.semtech.com
SC1301A/B
2A High Speed Low-Side
MOSFET Driver in SOT-23
POWER MANAGEMENT
Revision: May 30, 2007
Description Features
Applications
Typical Application Circuit
The SC1301A/B is a cost effective single-channel high-
speed MOSFET driver. The driver is capable of driving a
1000pF load in 20ns rise/fall time and has a 60ns propa-
gation delay time from input transition to the gate of the
power MOSFET. The high current driving capability
(2A peak) allows fast switching up to 1MHz. The SC1301A
is noninverting and the SC1301B is inverting.
An Undervoltage lockout circuit is included to guarantee
that the driver output is low when Vcc is less than or
equal to 4.1V (typ) at supply ramp up. An internal tem-
perature sensor shuts down the driver in the event of
overtemperature. The 5-pin SOT-23 package uses mini-
mum space.
+4.5V to +16.5V operation
Fast rise and fall times
(20ns typical with 1000pf load )
2A peak drive current
Enable/disable control
TTL-compatible input
Inverting or noninverting versions
Undervoltage lockout
Low supply current
-40°C to 85°C ambient temperature operating range
Over temperature protection
ESD protection
SOT-23-5 package. Also available in Lead-free, fully
WEEE and RoHS compliant.
Switch-mode power supplies
Battery powered applications
Solenoid and motor drives
SC1301A
3
1
4
2
5
VCC
IN
OUT
GND
EN
Vload
Input
10uF
LOAD
0.1uF
+12V
22007 Semtech Corp. www.semtech.com
SC1301A/B
PRELIMINARYPOWER MANAGEMENT
Absolute Maximum Ratings
Unless otherwise specified: TA = 25°C, VCC = 12V, VIN = 5V, VEN = 5V
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DC Electrical Characteristics
Exceeding the specifications below may result in permanent damage to the device, or device malfunction. Operation outside of the parameters specified
in the Electrical Characteristics section is not implied.
32007 Semtech Corp. www.semtech.com
SC1301A/B
POWER MANAGEMENT
Timing Diagrams
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AC Electrical Characteristics
Unless otherwise specified: TA = 25°C, VCC = 12V, VEN = 5V, CL = 1000pF
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DC Electrical Characteristics (Cont.)
Unless otherwise specified: TA = 25°C, VCC = 12V, VIN = 5V, VEN = 5V
90%
10%
90%
10%
90%
10% 10%
90%
10%
90%
tRtF
tFtR
tD1 tD2
Input
Non-inverted
Output
SC1301A
Inverted
Output
SC1301B
0V
5V
42007 Semtech Corp. www.semtech.com
SC1301A/B
PRELIMINARYPOWER MANAGEMENT
Pin Descriptions
Pin Configuration Ordering Information
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Notes:
(1) Only available in tape and reel packaging. A reel
contains 3000 devices.
(2) Lead-free product. This product is fully WEEE and
RoHS compliant.
Top View
(SOT-23-5L)
TTL
Input
DRIVER
BIAS
TTL
Input
IN
EN
GND
SC1301A
BIAS
PRE
VCC
OUT
BANDGAP
SC1301B
GND
IN
TTL
Input
BIAS
TTL
Input
EN
BIAS
PRE
BANDGAP
DRIVER
OUT
VCC
Block Diagrams
52007 Semtech Corp. www.semtech.com
SC1301A/B
POWER MANAGEMENT
Applications Information
The SC1301A/B is a high speed, high peak current
MOSFET driver. It is designed to drive power MOSFETs
with ultra-low rise/fall time and propagation delays. As
the switching frequency of PWM controllers is increased
to reduce power converters volume and cost, fast rise
and fall times are necessary to minimize switching losses.
While discrete solutions can achieve reasonable drive
capability, implementing delay and other housekeeping
functions necessary for safe operation can become
cumbersome and costly. The SC1031A/B presents a total
solution for the high-speed, high power density
applications. A wide input supply range of 4.5V - 16.5V
allows operation in battery powered applications as well
as distributed power systems.
Supply Bypass and Layout
A 4.7µF to 10µF tantalum bypass capacitor with low ESR
(equivalent series resistance) and an additional 0.1µF
ceramic capacitor in parallel are recommended to con-
trol switching and supply transients. Low ESR (equiva-
lent series resistance) metalized film capacitors may also
be used. As with any high speed, high current circuit,
proper layout is critical in achieving optimum performance
of the SC1301A/B. Attention should be paid to the
proper placement of the driver, the switching MOSFET
and the bypass capacitors.
The driver should be placed as close as possible to elimi-
nate the possibility of oscillation caused by trace induc-
tance and the MOSFET gate capacitance. A resistor in
the range of 10Ω could be used in series with the gate
drive to damp the ringing if the drive output path is not
short enough. The bypass capacitors should be also
placed closely between Vcc and GND of the driver. A
Schottky diode may be connected between the ground
and the output pin to avoid latch-up in some applica-
tions.
Drive Capability and Power Dissipation
The SC1301A/B is able to deliver 2A peak current typi-
cally for driving a capacitive load, such as a MOSFET.
This high peak current will charge the input capacitance
of the device to turn on quickly. A similar amount of cur-
rent is needed to discharge the capacitance to ground
to turn the device off.
Using the SC1301A/B for fast switching actions, such as
turning on or turning off the capacitive load will signifi-
cantly reduce the device switching loss for high frequency
applications. Accordingly, the thermal stress and reliabil-
ity of the device can be improved.
Due to the non-linear characteristics of the input capaci-
tance of a device, the test load for the SC1301A/B is a
capacitor. Thus, the power from the bias power supply
can be calculated based on this setup. The energy, which
is required to charge the capacitor for turning on pro-
cess, is calculated by:
2
on VC
2
1
E⋅⋅=
where, C is the load capacitance and V is the voltage
applied to the driver.
During the turning off process, the same amount of en-
ergy will be dissipated in the resistive elements in the
gate drive. Therefore, the energy for one switching ac-
tion (one turning on and one turning off) will be as
follows:
2
total VCE ⋅=
The power dissipation due to the gate driving switching is
calculated by:
2
gate VCfP ⋅⋅=
where, f is switching frequency for a given application.
Below is an example to calculate the power dissipation
for the given application.
With VCC = 12V, C = 1nF and f = 200kHz, the power loss
for the gate switching actions will be as:
()()()
mW2912nF1kHz200P 2
gate =⋅⋅=
The power supply current will be:
mA4.2
V12
mW29
V
P
I
CC
gate ===
62007 Semtech Corp. www.semtech.com
SC1301A/B
PRELIMINARYPOWER MANAGEMENT
Thermal Information
The lifetime and performance of a driver is basically de-
termined by the drive power requirements of the load,
the thermal characteristics of the driver package and its
cooling method. The driver’s junction temperature must
be kept within the rated limit at all times. The application
system has to effectively remove the heat generated in
the driver in order for proper functions and performance.
If the junction temperature reaches 150oC, the internal
protection circuit will be triggered to shut down the gate
driver.
As shown in the power derating table, the SC1301A/B
has a power limit of 385mW when the ambient tempera-
ture is less than 25oC. As the ambient temperature
reaches 85oC, the allowed maximum power dissipation
for the driver will be 154mW. When the ambient tem-
perature is somewhere between 25oC and 85oC, the
power dissipation for the driver should be derated ac-
cording to the table. For each degree increasing of the
ambient temperature, 3.85mW decreasing should be
applied to the driver power dissipation. Possible cooling
methods may include using big pads, natural air-cooling
by a careful layout and forced air-cooling if necessary.
Applications Information (Cont.)
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72007 Semtech Corp. www.semtech.com
SC1301A/B
POWER MANAGEMENT
Typical Characteristics
Supply Current vs Vcc
500
1000
1500
2000
2500
3000
3500
4000
4500
5000
3.5 5.5 7.5 9.5 11.5 13.5 15.5
Vcc (V)
Supply Current (uA)
En = Input = Vcc
TA = 25°C
En = Input = 0V
En = V cc, Input = 0V
En = 0V, Input = Vcc
Supply Current vs Temperature
2000
2500
3000
3500
4000
4500
5000
5500
-40 -20 0 20 40 60 80 100 120
Temperature (°C)
Supply Current (uA)
Vcc = 12V
En = Inp ut = 0V
En = 0V, Input = Vcc
En = Vcc, Input = 0V
En = Inp ut = Vcc
UVLO vs Temperature
3.850
3.900
3.950
4.000
4.050
4.100
4.150
4.200
4.250
4.300
-40 -20 0 20 40 60 80 100 120
Temperature (°C)
UVLO (V)
Enable Threshold Voltage vs Temperature
1.00
1.10
1.20
1.30
1.40
1.50
1.60
1.70
1.80
-40 -20 0 20 40 60 80 100 120
Te mpe rature (°C)
Enable Threshold Voltage (V)
Vcc = 12V, Vin = 5V
En a b le d
Disabled
Input Threshold Voltage vs Temperature
0.60
0.80
1.00
1.20
1.40
1.60
1.80
2.00
2.20
2.40
-40 -20 0 20 40 60 80 100 120
Te mpe rature (°C)
Input Threshold Voltage (V)
High
Vcc = 12V, Ven = 5V
Low
Enable Input Current vs Vcc
0.00
1.00
2.00
3.00
4.00
5.00
6.00
7.00
8.00
4.5 6.5 8.5 10.5 12.5 14.5 16.5
Vcc (V)
Enable Input Current (uA)
Inp u t = V c c
Inp u t = 0 V
82007 Semtech Corp. www.semtech.com
SC1301A/B
PRELIMINARYPOWER MANAGEMENT
Typical Characteristics (Cont.)
Enable Input Current vs Temperature
0.00
1.00
2.00
3.00
4.00
5.00
6.00
7.00
-40 -20 0 20 40 60 80 100 120
Temperature (°C)
Enable Input Current (uA)
Vcc = 12V
Inp u t = V c c
Inp u t = 0 V
Input Current vs Vcc
0
1
2
3
4
5
6
7
8
4.5 6.5 8.5 10.5 12.5 14.5 16.5
Vcc (V)
Input Current (uA)
En = V c c
En = 0V
TA = 25°C
Input Current vs Temperature
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
-40 -20 0 20 40 60 80 100 120
Temperature (°C)
Input Current (uA)
Vcc = 12V
En = V c c
En = 0V
92007 Semtech Corp. www.semtech.com
SC1301A/B
POWER MANAGEMENT
Outline Drawing - SOT-23-5
Semtech Corporation
Power Management Products Division
200 Flynn Road, Camarillo, CA 93012
Phone: (805)498-2111 FAX (805)498-3804
Contact Information
.110 BSC
.037 BSC
DETAIL
aaa C
SEATING PLANE
C
ccc C
2X N/2 TIPS
2X E/2
5
SEE DETAIL
A1
A
A2
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e1
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D
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5
A
0.20
1.60
3.00
2.80 BSC
0.95 BSC
.069 1.50
2.90
.020 0.25
1.75
0.50
-
EI
L
(L1)
c
01
0.25
PLANE
GAGE
H
2.80.110
bbb C A-B D
A
B
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0°
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-
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0.10
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1.15
(0.60)
0.45.024
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0.30
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.90
0.90
0.22
0.60
-
0.15
1.45
1.30
-
-
1.90 BSC.075 BSC
DIMENSIONS "E1" AND "D" DO NOT INCLUDE MOLD FLASH, PROTRUSIONS
DATUMS AND TO BE DETERMINED AT DATUM PLANE
OR GATE BURRS.
CONTROLLING DIMENSIONS ARE IN MILLIMETERS (ANGLES IN DEGREES).
NOTES:
1.
3.
2. -A- -B- -H-
DIMENSIONS
INCHES
L1
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bbb
ccc
01
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DIM
E
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E1
c
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A
A2
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MIN NOM
MILLIMETERS
NOMMAX MIN MAX
SIDE VIEW
Land Pattern - SOT-23-5
DIMENSIONS
INCHES
Y
Z
DIM
G
P
X
C
MILLIMETERS
P
(C) Z
Y
G
.043
.141
.055
(.098)
.037
.024
1.40
(2.50)
0.95
0.60
1.10
3.60
XDIMENSIONS
INCHES
Y
Z
DIM
G
P
X
C
MILLIMETERS
THIS LAND PATTERN IS FOR REFERENCE PURPOSES ONLY.
CONSULT YOUR MANUFACTURING GROUP TO ENSURE YOUR
COMPANY'S MANUFACTURING GUIDELINES ARE MET.
NOTES:
1.