2SJ305 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ305 High Speed Switching Applications Analog Applications * High input impedance * Low gate threshold voltage.: Vth = -0.5~-1.5 V * Excellent switching times.: ton = 0.06 s (typ.) Unit: mm toff = 0.15 s (typ.) * Low drain-source ON resistance: RDS (ON) = 2.4 (typ.) * Small package. * Complementary to 2SK2009 Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage VDS -30 V Gate-source voltage VGSS 20 V DC drain current ID -200 mA JEITA SC-59 Drain power dissipation PD 200 mW TOSHIBA 2-3F1F Channel temperature Tch 150 C Storage temperature range Tstg -55~150 C JEDEC TO-236MOD Weight: 0.012 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note: This transistor is electrostatic sensitive device. Please handle with caution. Marking Equivalent Circuit 1 2007-11-01 2SJ305 Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Drain-source breakdown voltage Drain cut-off current Symbol IGSS V (BR) DSS IDSS Test Condition VGS = 10 V, VDS = 0 ID = -1 mA, VGS = 0 VDS = -30 V, VGS = 0 Min Typ. Max Unit 0.1 A -30 V -10 A Vth VDS = -3 V, ID = -0.1 mA -0.5 -1.5 V Forward transfer admittance Yfs VDS = -3 V, ID = -50 mA 100 mS Drain-source ON resistance RDS (ON) ID = -50 mA, VGS = -2.5 V 2.4 4 Gate threshould voltage Input capacitance Ciss VDS = -3 V, VGS = 0, f = 1 MHz 92 pF Reverse transfer capacitance Crss VDS = -3 V, VGS = 0, f = 1 MHz 36 pF Output capacitance Coss VDS = -3 V, VGS = 0, f = 1 MHz 80 pF 0.06 Turn-on time ton Switching time Turn-off time toff VDD = -3 V, ID = -10 mA VGS = 0~-2.5 V VDD = -3 V, ID = -10 mA VGS = 0~-2.5 V s 0.15 Switching Time Test Circuit 2 2007-11-01 2SJ305 3 2007-11-01 2SJ305 4 2007-11-01 2SJ305 RESTRICTIONS ON PRODUCT USE * Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. * This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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