11
QCA75AA100
TRANSISTOR MODULE
UL;E76102 M
Maximum Ratings Tj 25
Electrical Characteristics Tj 25
Symbol Item Conditions Ratings
QCA75AA100 Unit
VCBO Collector-Base Voltage 1000 V
VCEX Collector-Emitter Voltage VBE 2V 1000 V
Emitter-Base Voltage VVEBO 7
ICCollector Current 75 A
ICReverse Collector Current 75 A
IBBase Current 4 A
PTTotal power dissipation TC25 500 W
TjJunction Temperature 40 150
Tstg Storage Temperature 40 125
VISO Isolation Voltage A.C.1minute 2500 V
Mounting
Torque
Mounting
M6
Terminal M5
Recommended Value 2.5 3.9 25 40 4.7 48
Recommended Value 1.5 2.5 15 25 2.7 28
N m
fB
Mass Typical Value 250 g
Unit A
Symbol Item Conditions Ratings
Min. Max.
1.00
200
75
2.50
3.50
2.50
15.00
3.00
1.80
0.25
1.20
Unit
ICBO Collector Cut-off Current VCB 1000V mA
IEBO Emitter Cut-off Current VEB 7V mA
1000
V
CEX SUS
Collector Emitter Sustaning Voltage
Ic 15A IB2 4A V
hFE DC Current Gain Ic 75A VCE 2.8V
100
Ic 75A VCE 5V
VCE(sat)
Collector-Emitter Saturation Voltage
Ic 75A IB1.5A V
VBE(sat)
Base-Emitter Saturation Voltage
Ic 75A IB1.5A V
s
V
/W
ton On Time
Storage Time
Fall Time
ts
tf
Vcc 600V Ic 75A
IB1 1.5A IB2 1.5A
Ic 75A
Transistor part
Diode part
VECO
Rth(j-c)
Switching
Time
Collector-Emitter Reverse Voltage
Thermal Impedance
(junction to case)
QCA75AA100 is a dual Darlington power transistor module which has series- connected
high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast
recovery diode. The mounting base of the module is electrically isolated from
semiconductor elements for simple heatsink construction,
IC75A, VCEX 1000V
Low saturation voltage for higher efficiency.
High DC current gain hFE
Isolated mounting base
Applications
Motor Control VVVF , AC/DC Servo, UPS,
Switching Power Supply, Ultrasonic Application
http://store.iiic.cc/
13
QCA75AA120
TRANSISTOR MODULE
UL;E76102 M
Thermal Impedance
(junction to case)
Maximum Ratings Tj 25
Electrical Characteristics Tj 25
Symbol Item Conditions Ratings
QCA75AA120 Unit
VCBO Collector-Base Voltage 1200 V
VCEX Collector-Emitter Voltage VBE 2V 1200 V
Emitter-Base Voltage VVEBO 10
ICCollector Current 75 A
ICReverse Collector Current 75 A
IBBase Current 4 A
PTTotal power dissipation TC25 500 W
TjJunction Temperature 40 150
Tstg Storage Temperature 40 125
VISO Isolation Voltage A.C.1minute 2500 V
Mounting
Torque
Mounting
M6
Terminal M5
Recommended Value 2.5 3.9 25 40 4.7 48
Recommended Value 1.5 2.5 15 25 2.7 28
N m
(fB)
Mass Typical Value 250 g
Unit A
Symbol Item Conditions Ratings
Min. Max.
1.00
300
75
3.00
3.50
2.50
15.00
3.00
1.80
0.25
1.20
Unit
ICBO Collector Cut-off Current VCB 1200V mA
IEBO Emitter Cut-off Current VEB 10V mA
1200
V
CEX SUS
Collector Emitter Sustaning Voltage
Ic 15A IB2 3A V
hFE DC Current Gain Ic 75A VCE 5V
VCE(sat)
Collector-Emitter Saturation Voltage
Ic 75A IB1.5A V
VBE(sat)
Base-Emitter Saturation Voltage
Ic 75A IB1.5A V
s
V
/W
ton On Time
Storage Time
Fall Time
ts
tf
Vcc 600V Ic 75A
IB1 1.5A IB2 1.5A
Ic 75A
Transistor part
Diode part
VECO
Rth(j-c)
Switching
Time
Collector-Emitter Reverse Voltage
QCA75AA120 is a dual Darlington power transistor module which has series- connected
high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast
recovery diode. The mounting base of the module is electrically isolated from
semiconductor elements for simple heatsink construction,
IC75A, VCEX 1200V
Low saturation voltage for higher efficiency.
High DC current gain hFE
Isolated mounting base
Applications
Motor Control VVVF , AC/DC Servo, UPS,
Switching Power Supply, Ultrasonic Application
http://store.iiic.cc/
