HN1D01FU
2001-02-08 1/3
TOSHIBA Diode Silicon Epitaxial Planar Type
HN1D01FU
Ultra High Speed Switching Application
Small package
Low forward voltage : VF (3) = 0.92V (typ.)
Fast reverse recovery ti me : trr = 1.6ns (typ.)
Small total capacitance : CT = 2.2pF (typ.)
Maximum Ratings (Ta = 25°
°°
°C)
Characteristic Symbol Rating Unit
Maximum (peak) reverse voltage VRM 85 V
Reverse voltage VR 80 V
Maximum (peak) forward current IFM 300* mA
Average forward current IO 100* mA
Surge current (10ms) IFSM 2* A
Power dissipation P 200 mW
Junction temperature Tj 125 °C
Storage temperature Tstg −55~125 °C
*: This is the Maximum Ratings of single diode (Q1 or Q2 or Q3 or Q4).
In the case of using Unit 1 and Unit 2 independently or simultaneously,
the Maximum Ratings per diode is 75% of the single diode one.
Electrical Characteristics (Q1, Q2 , Q3 , Q4 Co mmo n , Ta = 25°
°°
°C)
Characteristic Symbol
Test
Circuit Test Condition Min Typ. Max Unit
VF (1) ― I
F = 1mA ― 0.61 ―
VF (2) ― I
F = 10mA ― 0.74 ―
Forward voltage
VF (3) ― IF = 100mA ― 0.92 1.20
V
IR (1) ― VR = 30V ― ― 0.1
Reverse current
IR (2) ― V
R = 80V ― ― 0.5
µA
Total capacitance CT ― V
R = 0, f = 1MHz ― 2.2 4.0 pF
Reverse recovery time trr ― IF = 10mA (fig.1) ― 1.6 4.0 ns
JEDEC ―
EIAJ ―
TOSHIBA 1-2T1B
Weight: 6.8mg
Unit in mm
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general
can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the
buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and
to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury o
r
damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the
most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling
Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal
equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are
neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction o
r
failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energ
y
control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this documen
t
shall be made at the customer’s own risk.
• The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed b
y
TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its
use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION o
r
others.
• The information contained herein is subject to change without notice.
000707EAA1
HN1D01FU
2001-02-08 2/3
Pin A ssignment ( Top View) Marking
Fig.1 Reverse Recovery Time (trr) Test Circuit
HN1D01FU
2001-02-08 3/3
Q1,Q,2,Q3,Q4Common
Q1,Q,2,Q3,Q4Common
Q1, Q,2, Q3, Q4 Common Q1, Q,2, Q3, Q4 Common
