AON6512
30V
N-Channel AlphaMOS
General Description Product Summary
V
DS
I
D
(at V
GS
=10V) 150A
R
DS(ON)
(at V
GS
=10V) < 1.7mΩ
R
DS(ON)
(at V
GS
= 4.5V) < 2.4mΩ
Application
100% UIS Tested
100% R
g
Tested
Symbol
V
DS
30V
• Latest Trench Power AlphaMOS (αMOS LV) technology
• Very Low RDS(on) at 4.5V
GS
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
• DC/DC Converters in Computing, Servers, and POL
• Isolated DC/DC Converters in Telecom and Industrial
V
Maximum UnitsParameter
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
30
G
D
S
Top View
1
2
3
4
8
7
6
5
PIN1
DFN5X6
Top View Bottom View
V
DS
V
GS
I
DM
I
AS
E
AS
V
DS
Spike V
SPIKE
T
J
, T
STG
Symbol
t ≤ 10s
Steady-State
Steady-State
R
θJC
Maximum Junction-to-Case °C/W
°C/W
Maximum Junction-to-Ambient
A D
1.1 55
1.5
W
Power Dissipation
A
P
DSM
W
T
A
=70°C
83
4.7
T
A
=25°C
T
C
=25°C
7.4
33
T
C
=100°C
Power Dissipation
B
P
D
mJ
Avalanche Current
C
43
Continuous Drain
Current
123
54
A70
Avalanche energy L=0.05mH
C
A
T
A
=25°C I
DSM
A
Max
V
T
A
=70°C
I
D
150
115
T
C
=25°C
T
C
=100°C 340Pulsed Drain Current
C
Continuous Drain
Current
G
V±20Gate-Source Voltage
30
100ns 36 V
Maximum Junction-to-Ambient
A
°C/W
R
θJA
14
40 17 Units
Junction and Storage Temperature Range -55 to 150 °C
Thermal Characteristics
Parameter Typ
Rev 0: Nov 2011
www.aosmd.com Page 1 of 6
AON6512
Symbol Min Typ Max Units
BV
DSS
30 V
V
DS
=30V, V
GS
=0V 1
T
J
=55°C 5
I
GSS
100 nA
V
GS(th)
Gate Threshold Voltage 1 1.5 2 V
1.4 1.7
T
J
=125°C 1.9 2.3
1.9 2.4 mΩ
g
FS
85 S
V
SD
0.7 1 V
I
S
85 A
C
iss
3430 pF
C
oss
1327 pF
C
rss
175 pF
R
g
0.3 0.7 1.1 Ω
Q
g
(10V) 53 64 nC
Q
g
(4.5V) 25 30 nC
Q
gs
7.8 nC
Q
gd
10.3 nC
t
D(on)
7.5 ns
t
r
5.0 ns
t
33.8
ns
V
DS
=0V, V
GS
= ±20V
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Forward Transconductance I
S
=1A,V
GS
=0V
V
DS
=5V, I
D
=20A
DYNAMIC PARAMETERS
V
GS
=4.5V, I
D
=20A
R
DS(ON)
Static Drain-Source On-Resistance
Diode Forward Voltage
mΩ
V
GS
=10V, I
D
=20A
Gate-Body leakage current
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS Parameter Conditions
I
DSS
µA
Zero Gate Voltage Drain Current
Drain-Source Breakdown Voltage I
D
=250µA, V
GS
=0V
Gate Source Charge
Gate Drain Charge
Total Gate Charge
SWITCHING PARAMETERS
V
GS
=10V, V
DS
=15V, I
D
=20A
Reverse Transfer Capacitance V
GS
=0V, V
DS
=15V, f=1MHz
V
DS
=V
GS,
I
D
=250µA
Turn-On Rise Time
Turn-Off DelayTime
V
GS
=10V, V
DS
=15V, R
L
=0.75Ω,
R
=3
Ω
Turn-On DelayTime
Gate resistance V
GS
=0V, V
DS
=0V, f=1MHz
Total Gate Charge
t
D(off)
33.8
ns
t
f
9.8 ns
t
rr
22 ns
Q
rr
58 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Charge
Body Diode Reverse Recovery Time I
F
=20A, dI/dt=500A/µs
Turn-Off DelayTime
R
GEN
=3
Ω
Turn-Off Fall Time I
F
=20A, dI/dt=500A/µs
A. The value of RθJA is measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design.
B. The power dissipation PDis based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
Rev 0: Nov 2011 www.aosmd.com Page 2 of 6
AON6512
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
20
40
60
80
100
0123456
ID(A)
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
0
1
2
3
4
0 5 10 15 20 25 30
RDS(ON) (mΩ
Ω
Ω
Ω)
ID(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
0.8
1
1.2
1.4
1.6
0 25 50 75 100 125 150 175 200
Normalized On-Resistance
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
VGS=4.5V
ID=20A
VGS=10V
ID=20A
25°C
125°C
V
DS
=5V
VGS=4.5V
VGS=10V
0
20
40
60
80
100
012345
ID(A)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
V
GS
=2.5V
3V
10V
4.5V
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
0.0 0.2 0.4 0.6 0.8 1.0 1.2
IS(A)
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
25°C
125°C
(Note E)
0
1
2
3
4
5
2 4 6 8 10
RDS(ON) (mΩ
Ω
Ω
Ω)
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
ID=20A
25°C
125°C
Rev 0: Nov 2011 www.aosmd.com Page 3 of 6
AON6512
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
2
4
6
8
10
0 10 20 30 40 50 60
VGS (Volts)
Qg(nC)
Figure 7: Gate-Charge Characteristics
0
500
1000
1500
2000
2500
3000
3500
4000
4500
5000
0 5 10 15 20 25 30
Capacitance (pF)
VDS (Volts)
Figure 8: Capacitance Characteristics
Ciss
0
40
80
120
160
200
240
280
0.0001 0.001 0.01 0.1 1 10
Power (W)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-Case
Coss
C
rss
VDS=15V
ID=20A
TJ(Max)=150°C
TC=25°C
10
µ
s
0.0
0.1
1.0
10.0
100.0
1000.0
0.01 0.1 1 10 100
ID(Amps)
VDS (Volts)
Figure 9: Maximum Forward Biased
10
µ
s
10ms
1ms
DC
RDS(ON)
TJ(Max)=150°C
T
C
=25°C
100
µ
s
(Note F)
0.01
0.1
1
10
1E-05 0.0001 0.001 0.01 0.1 1 10
Zθ
θ
θ
θJC Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Single Pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
Ton T
PD
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Safe Operating Area (Note F)
RθJC=1.5°C/W
Rev 0: Nov 2011 www.aosmd.com Page 4 of 6
AON6512
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
10
20
30
40
50
60
70
80
90
100
0 25 50 75 100 125 150
Power Dissipation (W)
TCASE (°C)
Figure 12: Power De-rating (Note F)
0
20
40
60
80
100
120
140
160
0 25 50 75 100 125 150
Current rating ID(A)
TCASE (°C)
Figure 13: Current De-rating (Note F)
1
10
100
1000
10000
1E-05 0.001 0.1 10 1000
Power (W)
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction
-
to
-
TA=25°C
0.001
0.01
0.1
1
10
0.001 0.01 0.1 1 10 100 1000
Zθ
θ
θ
θJA Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
Ton T
PD
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Figure 14: Single Pulse Power Rating Junction
-
to
-
Ambient (Note H)
RθJA=55°C/W
Rev 0: Nov 2011 www.aosmd.com Page 5 of 6
AON6512
-
+
VDC
Ig
Vds
DUT
-
+
VDC
Vgs
Vgs
10V
Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
VDC
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Vgs
Vds
10%
90%
Resistive Switching Test Circuit & Waveforms
t t
r
d(on)
t
on
t
d(off)
t
f
t
off
Id
L
Vds
BV
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Vds
DSS
2
E = 1/2 LI
AR
AR
Vdd
Vgs
Vgs
Rg
DUT
-
+
VDC
Vgs
Id
Vgs
I
Ig
Vgs
-
+
VDC
DUT
L
Vgs
Vds
Isd
Isd
Diode Recovery Test Circuit & Waveforms
Vds -
Vds +
I
F
AR
dI/dt
I
RM
rr
Vdd
Vdd
Q = - Idt
t
rr
Rev 0: Nov 2011 www.aosmd.com Page 6 of 6